SPD08N50C3BTMA1

SPD08N50C3 Final data Cool MOS™ Power Transistor VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPD08N50C3 P-TO252-3-1 Q67040-S4569 08N50C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 7.6 TC = 100 °C 4.6 Pulsed drain current, t p limited by Tjmax ID puls 22.8 Avalanche energy, single pulse EAS 230 EAR 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 7.6 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 83 W Operating and storage temperature Tj , Tstg -55... +150 °C mJ ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax1) ID=7.6A, VDD=50V Page 1 2003-06-27 SPD08N50C3 Final data Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 400 V, ID = 7.6 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 2) - - 50 - - 260 Soldering temperature, Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=7.6A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=350µΑ, VGS=V DS Zero gate voltage drain current I DSS VDS=500V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C, - 0.5 1 Tj=150°C - - 100 VGS=20V, V DS=0V - - 100 Ω VGS=10V, ID =4.6A, Tj=25°C - 0.5 0.6 Tj=150°C - 1.5 - f=1MHz, open Drain - 1.2 - Page 2 nA 2003-06-27 SPD08N50C3 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol gfs Conditions VDS≥2*ID*R DS(on)max, Values Unit min. typ. max. - 6 - S pF ID=4.6A Input capacitance Ciss VGS=0V, VDS=25V, - 750 - Output capacitance Coss f=1MHz - 350 - Reverse transfer capacitance Crss - 12 - - 56 - - 30 - Effective output capacitance,4) Co(er) VGS=0V, energy related VDS=0V to 400V Effective output capacitance,5) Co(tr) pF time related Turn-on delay time td(on) VDD=400V, VGS=0/10V, - 6 - Rise time tr ID=7.6A, RG =12Ω - 5 - Turn-off delay time td(off) - 60 - Fall time tf - 7 - - 3 - - 17 - - 32 - - 5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=400V, ID=7.6A V DD=400V, ID=7.6A, ns nC V GS=0 to 10V Gate plateau voltage V(plateau) VDD=400V, ID=7.6A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-06-27 SPD08N50C3 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 7.6 - - 22.8 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD V GS=0V, IF=IS - 1 1.2 V Reverse recovery time trr V R=400V, IF=IS , - 370 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 3.6 - µC Peak reverse recovery current Irrm - 25 - A Peak rate of fall of reverse dirr /dt - 700 - A/µs recovery current Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.024 Rth2 Cth1 0.00012 0.046 Cth2 0.0004578 Rth3 0.085 Cth3 0.000645 Rth4 0.308 Cth4 0.001867 Rth5 0.317 Cth5 0.004795 Rth6 0.112 Cth6 0.045 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-06-27 SPD08N50C3 Final data 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( VDS ) parameter : D = 0 , TC=25°C 100 10 2 SPD08N50C3 W A 80 10 1 ID Ptot 70 60 10 0 50 40 30 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 20 10 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (tp) ID = f (VDS); Tj =25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 24 K/W 20V 10V 8V A 7V ID ZthJC 10 0 10 -1 10 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse -2 16 6,5V 12 6V 8 5,5V 5V 4 4,5V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 Page 5 0 0 5 10 15 VDS 25 V 2003-06-27 3 SPD08N50C3 Final data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj =150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, VGS 10 13 A Ω 20V 8V 6.5V 11 RDS(on) ID 9 8 7 5V 6 5.5V 7 4.5V 8 6V 10 4V 6V 6.5V 8V 20V 5 6 5 5.5V 4 5V 4 3 4.5V 3 2 2 4V 1 1 0 0 2 4 6 8 0 0 10 12 14 16 18 20 22 V 25 2 4 6 8 10 12 VDS A 15 ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter : ID = 4.6 A, VGS = 10 V parameter: tp = 10 µs 3.4 SPD08N50C3 24 Ω A 25°C 20 18 2.4 ID R DS(on) 2.8 2 16 14 150°C 12 1.6 10 1.2 8 6 98% 0.8 4 typ 0.4 0 -60 2 -20 20 60 100 °C 180 0 0 2 4 6 V 10 VGS Tj Page 6 2003-06-27 SPD08N50C3 Final data 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 7.6 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPD08N50C3 V SPD08N50C3 A 10 10 1 0.2 VDS max IF VGS 12 0.8 VDS max 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 5 10 15 20 25 30 40 nC 35 10 -1 0 50 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 5.5 A, VDD = 50 V 260 8 mJ A 220 200 EAS IAR 6 5 Tj (START)=25°C 180 160 140 4 120 100 3 Tj (START)=125°C 80 2 60 40 1 20 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR Page 7 0 20 40 60 80 100 120 °C 160 Tj 2003-06-27 SPD08N50C3 Final data 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: EAR =0.5mJ 600 SPD08N50C3 500 V 560 PAR V(BR)DSS W 570 550 540 300 530 520 200 510 500 490 100 480 470 460 450 -60 -20 20 60 100 °C 0 4 10 180 10 5 10 MHz Tj f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: VGS =0V, f=1 MHz 10 4 4 pF µJ Ciss 3 C E oss 10 3 10 2 2.5 2 Coss 1.5 10 1 1 Crss 0.5 10 0 0 100 200 300 V 500 VDS 0 0 100 200 300 V 500 VDS Page 8 2003-06-27 6 Final data SPD08N50C3 Definition of diodes switching characteristics Page 9 2003-06-27 Final data SPD08N50C3 P-TO-252-3-1 (D-PAK) Page 10 2003-06-27 Final data SPD08N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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