SPD18P06PGBTMA1

SPD18P06P G SIPMOS  Power-Transistor Features Product Summary · P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS(on) 0.13 W · Avalanche rated Continuous drain current ID -18.6 A · dv/dt rated · 175°C operating temperature ° Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Type Package SPD18P06P G PG-TO252-3 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Pin 1 PIN 2/4 PIN 3 G D S Value ID Continuous drain current A T C = 25 °C -18.6 T C = 100 °C -13.2 ID puls Pulsed drain current Unit -74.4 T C = 25 °C EAS 150 EAR 8 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 80 W -55...+175 °C Avalanche energy, single pulse mJ I D = -18.6 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs I S = -18.6 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 175 °C T C = 25 °C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 3.4 55/175/56 Page 1 2008-09-02 SPD18P06P G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.85 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area 1) - - 50 K/W Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = -1 mA VGS(th) -2.1 -3 -4 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = -250 µA µA VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 150 °C - -10 -100 IGSS - -10 -100 nA RDS(on) - 0.1 0.13 W Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-source on-state resistance VGS = -10 V, I D = -13.2 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 3.4 Page 2 2008-09-02 SPD18P06P G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. gfs 4 8 - S Ciss - 690 860 pF Coss - 230 290 Crss - 95 120 td(on) - 12 18 tr - 5.8 8.7 td(off) - 24.5 37 tf - 11 16.5 Dynamic Characteristics Transconductance VDS³2*I D*RDS(on)max , ID = -13.2 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -13.2 A, RG = 2.7 W Rise time VDD = -30 V, V GS = -10 V, ID = -13.2 A, RG = 2.7 W Turn-off delay time VDD = -30 V, V GS = -10 V, ID = -13.2 A, RG = 2.7 W Fall time VDD = -30 V, V GS = -10 V, ID = -13.2 A, RG = 2.7 W Rev 3.4 Page 3 2008-09-02 SPD18P06P G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qgs - 4.4 6.6 Qgd - 9.3 14 Qg - 22 33 V(plateau) - -5.56 - Dynamic Characteristics Gate to source charge nC VDD = -48 , ID = -18.6 A Gate to drain charge VDD = -48 V, ID = -18.6 A Gate charge total VDD = -48 V, ID = -18.6 , V GS = 0 to -10 V Gate plateau voltage V VDD = -48 , I D = -18.6 A Parameter Symbol Values Unit min. typ. max. IS - - -18.6 ISM - - -74.4 VSD - -1 -1.33 V trr - 70 105 ns Qrr - 139 208 nC Reverse Diode Inverse diode continuous forward current A T C = 25 °C Inverse diode direct current,pulsed T C = 25 °C Inverse diode forward voltage VGS = 0 V, I F = -18.6 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs Rev 3.4 Page 4 2008-09-02 SPD18P06P G Power dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ³ 10 V SPD18P06P SPD18P06P -20 90 A W -16 70 ID Ptot -14 60 -12 50 -10 40 -8 30 -6 20 -4 10 -2 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , T C = 25 °C parameter : D = tp /T -10 2 SPD18P06P 10 1 tp = 29.0µs SPD18P06P K/W 10 0 A ID Z thJC 100 µs 10 -1 -10 1 D D = 0.50 DS /I 10 -2 0.20 0.10 =V 1 ms DS (on ) 0.05 0.02 R 10 -3 10 ms 0.01 single pulse DC -10 0 -1 -10 -10 0 -10 1 V -10 2 VDS Rev 3.4 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 5 2008-09-02 SPD18P06P G Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs RDS(on) = f (ID ) parameter: VGS SPD18P06P -50 SPD18P06P 0.42 Ptot = 80.00W W A VGS [V] a jk b -4.5 c -5.0 d -5.5 e -6.0 f -6.5 g -7.0 f h -7.5 i -35 ID h -30 g -25 i e -20 d -15 c d e f g h 0.32 0.28 0.24 0.20 -8.0 j -9.0 k -10.0 l -20.0 0.16 i 0.12 j k l c -10 0.08 b -5 0 0 b 0.36 -4.0 RDS(on) l -40 a VGS [V] = 0.04 a -1 -2 -3 -4 -5 -6 -7 -8 V 0.00 0 -10 a b c d e f -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -4 -8 g h i j k l -7.0 -7.5 -8.0 -9.0 -10.0 -20.0 -12 -16 -20 -24 -28 -32 A VDS -38 ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS³ 2 x I D x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs 10 -40 S A 8 -30 gfs ID 7 -25 6 5 -20 4 -15 3 -10 2 -5 0 0 1 -1 -2 -3 -4 -5 -6 -7 -8 V -10 VGS Rev 3.4 0 0 -5 -10 -15 -20 A -30 ID Page 6 2008-09-02 SPD18P06P G Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = -13.2 A, VGS = -10 V parameter: VGS = VDS , ID = -1 mA SPD18P06P 0.38 W -5.0 V -4.4 0.32 V GS(th) RDS(on) -4.0 0.28 0.24 -3.6 -3.2 -2.8 0.20 98% max -2.4 0.16 -2.0 typ 0.12 -1.6 typ -1.2 0.08 -0.8 0.04 min -0.4 0.00 -60 -20 20 60 100 140 °C 0.0 -60 200 -20 20 60 100 140 Tj V 200 Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 pF SPD18P06P A -10 1 C Ciss IF 10 3 Coss 10 2 -10 0 Crss Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 -5 -10 -15 -20 -25 V -10 -1 0.0 -35 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS Rev 3.4 -0.4 Page 7 2008-09-02 SPD18P06P G Avalanche energy Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = -18.6 A pulsed para.: I D = -18.6 A , VDD = -25 V, RGS = 25 SPD18P06P 160 -16 mJ V -12 VGS E AS 120 100 -10 0,2 VDS max 80 -8 60 -6 40 -4 20 -2 0 25 45 65 85 105 125 145 0 0 °C 185 Tj 4 8 12 0,8 VDS max 16 20 24 28 nC 34 QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD18P06P -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 140 °C 200 Tj Rev 3.4 Page 8 2008-09-02 SPD18P06P G Package outline: PG-TO252-3 Rev 3.4 page 9 2008-09-02 SPD18P06P G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 3.4 Page 10 2008-09-02