SPD26N06S2L-35

SPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS(on) 35 mΩ ID 30 A • Logic Level • 175°C operating temperature P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD26N06S2L-35 Package Ordering Code P- TO252 -3-11 Q67060-S7426 Marking 2N06L35 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A 30 TC=25°C 22 Pulsed drain current ID puls 120 TC=25°C EAS 80 Repetitive avalanche energy, limited by Tjmax 1) EAR 5 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 68 W -55... +175 °C Avalanche energy, single pulse mJ ID=26A, V DD=25V, RGS=25Ω kV/µs IS=26A, V DS=44V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg 55/175/56 IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD26N06S2L-35 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 1.45 2.2 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm2 cooling area 2) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=26µA Zero gate voltage drain current µA IDSS V DS=55V, VGS=0V, Tj=25°C - 0.01 1 V DS=55V, VGS=0V, Tj=125°C - 1 100 IGSS - 1 100 nA RDS(on) - 35 47 mΩ RDS(on) - 27 35 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=13A Drain-source on-state resistance V GS=10V, I D=13A 1Defined by design. Not subject to production test. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPD26N06S2L-35 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 12.5 25 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, ID =22A Input capacitance Ciss VGS =0V, VDS =25V, - 590 790 Output capacitance Coss f=1MHz - 138 180 Reverse transfer capacitance Crss - 46 70 Turn-on delay time td(on) VDD =30V, VGS =10V, - 6 9 Rise time tr ID =26A, - 21 32 Turn-off delay time td(off) RG =11Ω - 29 44 Fall time tf - 20 30 - 2 3 - 6 9 - 18 24 V(plateau) VDD =44V, ID =26A - 3.9 - V IS - - 30 A - - 120 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =44V, ID =26A VDD =44V, ID =26A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =26A - 0.95 1.3 V Reverse recovery time trr VR =30V, IF =lS , - 40 50 ns Reverse recovery charge Qrr diF /dt=100A/µs - 36 45 nC Page 3 2003-05-09 SPD26N06S2L-35 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 4 V parameter: VGS≥ 10 V SPD26N06S2L-35 SPD26N06S2L-35 32 75 W A 60 24 50 ID P tot 55 45 40 20 16 35 30 12 25 20 8 15 10 4 5 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPD26N06S2L-35 10 1 SPD26N06S2L-35 K/W A 10 0 10 µs /I D 2 10 -1 10 -2 R DS (on ) = V DS ID 10 Z thJC t = 7.2µs p D = 0.50 0.20 100 µs 10 1 0.10 0.05 10 -3 10 0.01 0 10 -1 10 0 10 1 V 0.02 single pulse 1 ms 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-05-09 0 SPD26N06S2L-35 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPD26N06S2L-35 75 mΩ V [V] GS a i ID 60 d 2.8 b 3.0 55 c 3.2 50 d 3.4 e 3.6 f 3.8 g 4.0 h 4.5 i 10.0 45 40 h 35 90 80 40 30 e i 20 d 10 VGS [V] = a 0 0 0.5 1 1.5 2 2.5 3 3.5 d 3.4 10 c 5 h 50 f 15 g 60 g 20 f 70 30 25 e 100 R DS(on) A SPD26N06S2L-35 120 Ptot = 68W b f 3.8 g 4.0 h i 4.5 10.0 0 V 4 e 3.6 5 0 4 8 12 16 20 24 28 32 36 A 42 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 55 28 A S 24 45 22 20 g fs ID 40 35 18 16 30 14 25 12 20 10 15 8 6 10 4 5 2 0 0 1 2 3 4 V 0 5.5 0 4 8 12 16 A 24 ID VGS Page 5 2003-05-09 SPD26N06S2L-35 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 13 A, VGS = 10 V parameter: VGS = VDS SPD26N06S2L-35 120 2.5 mΩ V 90 V GS(th) R DS(on) 100 80 70 140 µA 1.5 28 µA 60 50 1 98% 40 30 typ 0.5 20 10 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 4 10 pF A 3 10 2 10 1 IF Ciss C 10 3 SPD26N06S2L-35 Coss 10 2 Crss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 1 0 10 5 10 15 20 V 30 VDS 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-05-09 SPD26N06S2L-35 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D=26A, VDD = 25 V, RGS = 25 Ω parameter: ID = 30 A pulsed 80 mJ V 12 VGS 60 E AS SPD26N06S2L-35 16 50 10 0,2 VDS max 0,8 VDS max 40 8 30 6 20 4 10 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 4 8 12 16 20 24 nC 30 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 SPD26N06S2L-35 V(BR)DSS V 62 60 58 56 54 52 50 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPD26N06S2L-35 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPD26N06S2L-35, for simplicity the device is referred to by the term SPD26N06S2L-35 throughout this documentation. Page 8 2003-05-09