SPD30N03S2L-10
OptiMOS Power-Transistor
Product Summary
Feature
• N-Channel
VDS
30
V
• Enhancement mode
R DS(on)
10
mΩ
ID
30
A
• Logic Level
• Low On-Resistance R DS(on)
P- TO252 -3-11
• Excellent Gate Charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Type
SPD30N03S2L-10
Package
Ordering Code
P- TO252 -3-11 Q67042-S4030
Marking
2N03L10
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Value
Unit
A
30
TC=25°C
30
ID puls
120
EAS
150
Repetitive avalanche energy, limited by Tjmax 2)
EAR
10
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
100
W
-55... +175
°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
mJ
ID=30 A , V DD=25V, RGS=25Ω
kV/µs
IS=30A, VDS=24V, di/dt=200A/µs, T jmax=175°C
TC=25°C
Operating and storage temperature
T j , Tstg
IEC climatic category; DIN IEC 68-1
55/175/56
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SPD30N03S2L-10
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
1
1.5
Thermal resistance, junction - ambient, leaded
RthJA
-
-
100
SMD version, device on PCB:
RthJA
-
-
75
-
-
50
@ min. footprint
@ 6 cm2 cooling area
3)
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
30
-
-
VGS(th)
1.2
1.6
2
Static Characteristics
Drain-source breakdown voltage
V
V GS=0V, ID=1mA
Gate threshold voltage, VGS = V DS
ID=50µA
Zero gate voltage drain current
µA
IDSS
V DS=30V, VGS=0V, Tj=25°C
-
0.01
1
V DS=30V, VGS=0V, Tj=125°C
-
10
100
IGSS
-
1
100
nA
RDS(on)
-
11.2
14.6
Ω
RDS(on)
-
7.8
10
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, I D=30A
Drain-source on-state resistance
mΩ
V GS=10V, I D=30
1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 76A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
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SPD30N03S2L-10
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
23.8
47.5
-
Dynamic Characteristics
Transconductance
gfs
VDS ≥2*ID *RDS(on)max,
S
ID =30A
Input capacitance
Ciss
VGS =0V, VDS =25V,
-
1160
1550 pF
Output capacitance
Coss
f=1MHz
-
450
600
Reverse transfer capacitance
Crss
-
120
175
Turn-on delay time
td(on)
VDD =15V, VGS =10V,
-
6.1
9.2
Rise time
tr
ID =30A,
-
13
20
Turn-off delay time
td(off)
RG =5.4Ω
-
27
41
Fall time
tf
-
17
26
-
3.7
4.9
-
10.9
16.3
-
31.4
41.8
V(plateau) VDD =24V, ID =30A
-
3.4
-
V
IS
-
-
30
A
-
-
120
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =24V, ID =30A
VDD =24V, ID =30A,
nC
VGS =0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TC=25°C
forward current
Inv. diode direct current, pulsed
ISM
Inverse diode forward voltage
VSD
V GS=0V, IF=30A
-
0.9
1.2
V
Reverse recovery time
trr
V R=-V, IF=lS,
-
31
39
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
29
37
nC
Page 3
2003-04-24
SPD30N03S2L-10
1 Power dissipation
2 Drain current
Ptot = f (TC)
ID = f (T C)
parameter: VGS≥ 4 V
parameter: VGS≥ 10 V
SPD30N03S2L-10
110
SPD30N03S2L-10
32
W
A
90
24
70
ID
P tot
80
20
60
16
50
12
40
30
8
20
4
10
0
0
20
40
60
80
0
100 120 140 160 °C 190
0
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Max. transient thermal impedance
ID = f ( VDS )
Z thJC = f (t p)
parameter : D = 0 , TC = 25 °C
parameter : D = t p/T
10
3 SPD30N03S2L-10
10
1 SPD30N03S2L-10
K/W
A
10
DS
2
Z thJC
/I
D
t = 10.0µs
p
DS
(on
)
=
ID
V
10
0
10
-1
10
-2
R
100 µs
D = 0.50
10
0.20
1
0.10
1 ms
0.05
single pulse
10
0.02
-3
0.01
10
0
10
-1
10
0
10
1
V
10
2
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
tp
VDS
Page 4
2003-04-24
0
SPD30N03S2L-10
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (V DS); T j=25°C
RDS(on) = f (I D)
parameter: tp = 80 µs
parameter: VGS
SPD30N03S2L-10
75
A
SPD30N03S2L-10
32
Ptot = 100W
mΩ
60
55
c
ID
50
45
b
c
3.0
b
3.5
c
4.0
d
4.5
e
5.0
f
5.5
R DS(on)
V
[V]
GS
a
fe d
40
24
20
16
35
30
12
d
8
f
b
25
e
20
15
10
4 VGS [V] =
a
b
3.5
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
c
4.0
d
4.5
e
5.0
f
5.5
0
5
0
10
20
30
40
A
8 Typ. forward transconductance
ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max
g fs = f(I D); T j=25°C
parameter: tp = 80 µs
parameter: g fs
60
60
A
S
50
50
45
45
40
40
g fs
ID
7 Typ. transfer characteristics
35
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
60
ID
VDS
V 5
VGS
Page 5
0
0
10
20
30
40
A
60
ID
2003-04-24
SPD30N03S2L-10
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (T j)
parameter : ID = 30 , VGS = 10 V
parameter: VGS = VDS
SPD30N03S2L-10
24
2.5
mΩ
V
18
V GS(th)
R DS(on)
20
16
14
12
0,4mA
1.5
98%
50µA
10
1
typ
8
6
0.5
4
2
0
-60
-20
20
60
140 °C
100
0
-60
200
-20
20
60
°C
100
Tj
180
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (V DS)
IF = f (V SD)
parameter: VGS=0V, f=1 MHz
parameter: T j , tp = 80 µs
10
4
10
3 SPD30N03S2L-10
A
pF
10
10
2
10
1
IF
C
Ciss
3
Coss
T j = 25 °C typ
T j = 175 °C typ
Crss
T j = 25 °C (98%)
T j = 175 °C (98%)
10
2
0
10
5
10
15
20
V
30
0
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
V DS
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2003-04-24
SPD30N03S2L-10
13 Typ. avalanche energy
14 Typ. gate charge
E AS = f (T j)
VGS = f (QGate)
par.: I D = 30 A , V DD = 25 V, R GS = 25 Ω
parameter: ID = 30 A pulsed
160
mJ
V
12
VGS
120
E AS
SPD30N03S2L-10
16
100
10
80
8
60
6
40
4
20
2
0
25
45
65
85
105
125
145
°C 185
Tj
0,2 VDS max
0,8 VDS max
0
0
5
10
15
20
25
30
35
40 nC
50
QGate
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
36
SPD30N03S2L-10
V(BR)DSS
V
34
33
32
31
30
29
28
27
-60
-20
20
60
100
140 °C
200
Tj
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2003-04-24
SPD30N03S2L-10
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPD30N03S2L-10, for simplicity the device is referred to by the term
SPD30N03S2L-10 throughout this documentation.
Page 8
2003-04-24