SPD35N10

SPD35N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature 100 VDS
N-Channel
Enhancement mode
175°C operating temperature V R DS(on) 44 m
ID 35 A
Avalanche rated P-TO252
dv/dt rated Type SPD35N10 Package P-TO252 Ordering Code Q67042-S4125 Marking 35N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 35 TC=100°C 26.4 ID puls 140 EAS 245 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 150 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID =35 A , VDD =25V, RGS =25
Reverse diode dv/dt kV/µs IS =35A, VDS =80V, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2002-01-30 SPD35N10 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm 2 cooling area F) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID = - µA Zero gate voltage drain current µA IDSS VDS =100V, VGS=0V, Tj =25°C - 0.01 1 VDS =100V, VGS=0V, Tj =125°C - 1 100 IGSS - 1 100 nA RDS(on) - 36 44 m
Gate-source leakage current VGS =20V, VDS =0V Drain-source on-state resistance VGS =10V, ID =26.4A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-30 SPD35N10 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 12 23 - S pF Dynamic Characteristics Transconductance gfs VDS
2*ID*RDS(on)max , ID =26.4A Input capacitance Ciss VGS =0V, VDS=25V, - 1180 1570 Output capacitance Coss f=1MHz - 245 326 Reverse transfer capacitance Crss - 137 206 Turn-on delay time td(on) VDD =50V, VGS =10V, - 12.2 18.3 Rise time tr ID =35A, RG =7 - 63 95 Turn-off delay time td(off) - 39 59 Fall time tf - 23 34 - 6.5 8.6 - 27 41 - 49 65 V(plateau) VDD =80V, ID=35A - 6.1 - V IS - - 35 A - - 140 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =35A VDD =80V, ID =35A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =35A - 0.95 1.25 V Reverse recovery time trr VR =50V, IF =lS , - 80 100 ns Reverse recovery charge Qrr diF /dt=100A/µs - 230 290 nC Page 3 2002-01-30 SPD35N10 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS
10 V 160 SPD35N10 38 SPD35N10 A W 120 28 100 24 ID Ptot 32 20 80 16 60 12 40 8 20 0 0 4 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 10 1 3 SPD35N10 SPD35N10 K/W A 10 0 Z thJC tp = 2.5µs ID 10 2 10 -1 D 10 µs DS /I D = 0.50 =V 100 µs 10 0.20 DS (on ) 0.10 0.05 R 10 1 -2 1 ms 10 -3 single pulse 0.02 0.01 10 ms 10 0 -1 10 DC 10 0 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2002-01-30 SPD35N10 Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 90 e 500 d A a VGS[V]= a= 5 b= 6 c= 8 d= 10 e= 12 c m
ID 60 50 RDS(on) VGS[V]= a= 5 b= 6 c= 8 d= 10 e= 12 70 b 300 40 200 30 c b 20 100 d 10 a e 0 0 1 2 3 4 5 6 V 0 0 8 10 20 30 40 50 60 70 80 A 100 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS
2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 60 24 S A 20 18 ID g fs 40 16 14 30 12 10 20 8 6 10 4 2 0 2 3 4 5 7 V 0 0 5 10 15 20 25 35 A ID VGS Page 5 2002-01-30 SPD35N10 Preliminary data 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 26.4 A, VGS = 10 V parameter: VGS = VDS 190 SPD35N10 4 m
V 140 VGS(th) RDS(on) 160 120 3 ID =1mA 100 80 2.5 60 98% typ 40 2 ID =83µA 20 0 -60 -20 20 60 100 140 °C 1.5 -65 200 -35 -5 25 55 85 115 Tj °C 175 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 pF SPD35N10 A Ciss 10 2 C IF 10 3 Coss Crss 10 2 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 25 35 V 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2002-01-30 SPD35N10 Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 35 A , VDD = 25 V, RGS = 25  parameter: ID = 35 A pulsed 270 16 mJ V 210 12 VGS EAS SPD35N10 180 0,2 VDS max 0,8 VDS max 10 150 8 120 6 90 4 60 2 30 0 25 45 65 85 105 125 145 °C 185 0 0 10 20 30 40 50 60 nC 75 QGate Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPD35N10 120 V (BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Page 7 2002-01-30 Preliminary data SPD35N10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-01-30