SPI100N03S2-03

SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS(on) max. SMD version 3 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID • Superior thermal resistance P- TO263 -3-2 P- TO262 -3-1 100 A P- TO220 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP100N03S2-03 Package P- TO220 -3-1 Ordering Code Q67042-S4058 Marking SPB100N03S2-03 P- TO263 -3-2 Q67042-S4057 PN0303 SPI100N03S2-03 P- TO262 -3-1 Q67042-S4116 PN0303 PN0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) Value Unit A ID 100 TC=25°C 100 ID puls 400 EAS 810 Repetitive avalanche energy, limited by Tjmax 2) EAR 30 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 300 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=80A, V DD=25V, RGS=25Ω kV/µs IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.3 0.5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID =250µA Zero gate voltage drain current µA IDSS V DS=30V, VGS=0V, Tj=25°C - 0.01 1 V DS=30V, VGS=0V, Tj=125°C - 1 100 - 1 100 Gate-source leakage current IGSS nA V GS=20V, VDS=0V Drain-source on-state resistance RDS(on) mΩ V GS=10V, I D=80A - 2.5 3.3 V GS=10V, I D=80A, SMD version - 2.2 3 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 233A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 71 142 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =100A Input capacitance Ciss VGS =0V, VDS =25V, - 5300 7020 pF Output capacitance Coss f=1MHz - 2450 3200 Reverse transfer capacitance Crss - 470 700 Turn-on delay time td(on) VDD =15V, VGS =10V, - 24 36 Rise time tr ID =100A, - 40 60 Turn-off delay time td(off) RG =2.2Ω - 44 66 Fall time tf - 39 59 - 26 34 - 45 68 - 113 150 V(plateau) VDD =24V, ID =100A - 5.6 - V IS - - 100 A - - 400 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =100A VDD =24V, ID =100A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =100A - 0.9 1.3 V Reverse recovery time trr VR =15V, IF =lS , - 79 100 ns Reverse recovery charge Qrr diF /dt=100A/µs - 109 136 nC Page 3 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 6 V parameter: VGS≥ 10 V SPP100N03S2-03 320 SPP100N03S2-03 110 A W 90 240 ID P tot 80 200 70 60 160 50 120 40 30 80 20 40 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPP100N03S2-03 10 1 SPP100N03S2-03 K/W t = 20.0µs p 10 0 S(o n) ID =V Z thJC DS /I D A -1 10 -2 100 µs RD 10 2 10 D = 0.50 0.20 10 1 ms -3 0.10 0.05 single pulse 10 1 10 -1 10 0 10 1 V 10 2 10 -4 10 -5 0.02 0.01 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-05-09 0 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPP100N03S2-03 240 SPP100N03S2-03 11 Ptot = 300W A Ω V [V] GS a h 200 ID 180 160 140 g 120 100 4.5 b 4.8 c 5.0 d 5.2 e 5.5 f 5.8 g 6.0 h 7.0 i 10.0 8 7 5 4 h 3 60 i e 2 40 VGS [V] = d f 5.8 1 20 0 g 6 f 80 f 9 R DS(on) i c ab 0 0.5 1 1.5 2 2.5 3 3.5 V 4 0 5 0 g 6.0 h i 7.0 10.0 20 40 60 80 100 A VDS 140 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 200 180 A S 160 140 ID g fs 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 1 2 3 4 5 V 0 7 VGS Page 5 0 20 40 60 80 100 120 140 160 A 200 ID 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 80 A, VGS = 10 V parameter: VGS = VDS SPP100N03S2-03 8 4 Ω V V GS(th) R DS(on) 1.34 mA 6 5 4 3 268 µA 2.5 2 98% 3 1.5 typ 2 1 1 0.5 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 5 10 pF A 4 10 2 10 1 IF Ciss C 10 3 SPP100N03S2-03 Coss 10 3 T j = 25 °C typ T j = 175 °C typ Crss T j = 25 °C (98%) T j = 175 °C (98%) 10 2 0 10 5 10 15 20 V 30 VDS 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 80 A, V DD = 25 V, R GS = 25 Ω parameter: ID = 100 A pulsed 850 SPP100N03S2-03 16 mJ V 700 VGS E AS 12 600 500 0,2 VDS max 10 0,8 VDS max 8 400 6 300 200 4 100 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 20 40 60 80 100 120 140 nC 170 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPP100N03S2-03 V(BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP100N03S2-03, BSPB100N03S2-03 and BSPI100N03S2-03, for simplicity the device is referred to by the term SPP100N03S2-03, SPB100N03S2-03 and SPI100N03S2-03 throughout this documentation Page 8 2003-05-09