SPI11N60C3XKSA1

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220 • Extreme dv/dt rated • High peak current capability 1 • Improved transconductance 2 3 P-TO220-3-31 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP11N60C3 PG-TO220 Q67040-S4395 11N60C3 SPI11N60C3 PG-TO262 Q67042-S4403 11N60C3 Q67040-S4408 11N60C3 SPA11N60C3 PG-TO220FP 11N60C3 SPA11N60C3E8185 PG-TO220 Maximum Ratings Parameter Symbol Value SPA SPP_I Continuous drain current Unit ID A TC = 25 °C 11 11 1) TC = 100 °C 7 71) 33 33 Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS 340 340 EAR 0.6 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Gate source voltage static VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 125 33 Operating and storage temperature Tj , Tstg Reverse diode dv/dt 7) dv/dt A mJ ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Rev. 3.3 Page 1 -55...+150 15 W °C V/ns 2018-02-09 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 3) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=11A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=500µA, VGS =VDS Zero gate voltage drain current I DSS VDS=600V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 3.3 RG µA Tj=25°C - 0.1 1 Tj=150°C - - 100 VGS=30V, V DS=0V - - 100 VGS=10V, ID=7A Ω Tj=25°C - 0.34 0.38 Tj=150°C - 0.92 - f=1MHz, open drain - 0.86 - Page 2 nA 2018-02-09 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Parameter Transconductance Symbol gfs Conditions VDS≥2*ID*R DS(on)max, Values Unit min. typ. max. - 8.3 - S pF ID=7A Input capacitance Ciss VGS=0V, VDS=25V, - 1200 - Output capacitance Coss f=1MHz - 390 - Reverse transfer capacitance Crss - 30 - - 45 - - 85 - Effective output capacitance,5) Co(er) energy related VGS=0V, VDS=0V to 480V Effective output capacitance,6) Co(tr) time related Turn-on delay time td(on) VDD=380V, VGS=0/10V, - 10 - Rise time tr ID=11A, - 5 - Turn-off delay time td(off) RG =6.8Ω - 44 70 Fall time tf - 5 9 - 5.5 - - 22 - - 45 60 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=480V, ID=11A VDD=480V, ID=11A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=11A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 6C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS. 7ISD