SPI80N06S-08

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS® Power-Transistor Product Summary Features • N-channel - Normal Level -Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS(on),max (SMD version) 7.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow Green Package • 175°C operating temperature PG-TO263-3-2 • Avalanche test PG-TO262-3-1 PG-TO220-3-1 VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 Ω • Repetive Avalanche up to Tjmax = 175 °C • dv /dt rated Type Package Ordering Code Marking SPB80N06S-08 PG-TO263-3-2 SP0000-84808 1N0608 T C=25 °C, V GS=10 V SPI80N06S-08 PG-TO262-3-1 SP0000-82518 1N0608 T C=100 °C, V GS=10 V SPP80N06S-08 PG-TO220-3-1 SP0000-84809 1N0608 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID Value T C=25 °C, V GS=10 V 80 T C=100 °C, V GS=10 V 80 Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse E AS I D=80 A, R GS=25 Ω, V DD=25 V 700 Avalanche energy, periodic2) E AR T j=175 °C 30 dv /dt I D=80 A, V DS=40 V, di /dt =200 A/µs, T j,max=175 °C 6 Reverse diode dv /dt 2) Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 Unit A mJ kV/µs ±20 V 300 W -55 ... +175 °C 55/175/56 page 1 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Parameter Values Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - 0.38 0.5 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=240 µA 2.1 3.0 4 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 °C - 0.1 1 T j=150 °C2) - 10 100 V DS=25 V, V GS=0 V, V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=80 A - 6.5 8 mΩ V GS=10 V, I D=80 A SMD version - 6.2 7.7 |V DS|>2|I D|R DS(on)max, I D=80 A - 73 - Transconductance2) g fs S footnote on page 3 Rev. 1.0 page 2 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Parameter Values Symbol Conditions Unit min. typ. max. - 3660 - - 1075 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 540 - Turn-on delay time t d(on) - 22 - Rise time tr VDD=30 V, ID=80 A, - 53 - Turn-off delay time t d(off) VGS=10 V, RG=2.4 Ω - 54 - Fall time tf - 32 - Gate to source charge Q gs - 19 - Gate to drain charge Q gd - 62 - Gate charge total Qg - 125 187 Gate plateau voltage V plateau - 5.4 - V - - 80 A - - 320 1.3 V GS=0 V, V DS=25 V, f =1 MHz pF ns Gate Charge Characteristics2) V DD=44 V, I D=80 A, V GS=0 to 10 V nC Reverse Diode2) Diode continous forward current IS T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.9 Reverse recovery time t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs - 105 Reverse recovery charge Q rr - 30 V ns - nC 1) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 132A at 25°C. For detailed information see Application Note APPS071E at www.infineon.com/optimos 2) Defined by design not subjected to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS=10 V 100 350 300 80 250 60 I D [A] P tot [W] 200 150 40 100 20 50 0 0 0 50 100 150 0 200 50 100 150 200 T C [°C] T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 101 1000 10 µs limited by on-state resistance 100 100 µs 100 1 ms Z thJC [K/W] 10 ms I D [A] DC 0.5 0.2 10-1 0.1 0.05 0.02 10 0.01 10-2 1 single pulse 10-3 0.1 1 10 100 V DS [V] Rev. 1.0 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 25 160 6.5 V V8 140 V 10 6V 20 V7 V 4.5 V5 120 R DS(on) [mΩ] 100 I D [A] 5.5 V 80 60 V 5.5 15 V6 10 V 6.5 5V V7 V8 V 10 40 5 4.5 V 20 0 0 0 1 2 0 3 20 40 60 80 100 120 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 160 80 140 70 120 60 100 50 g fs [S] I D [A] parameter: T j 80 40 60 30 40 20 20 10 175 °C 25 °C 0 0 0 2 4 6 8 V GS [V] Rev. 1.0 0 20 40 60 80 I D [A] page 5 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 9 Typical Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=80 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 4 14 3.5 12 3 µA 1200 µA 240 10 V GS(th) [V] R DS(on) [mΩ] 16 8 2.5 2 6 1.5 4 1 2 0 0.5 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 Ciss I F [A] C [pF] Coss 103 Crss 25 °C 175 °C 102 0 10 20 30 40 V DS [V] Rev. 1.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] page 6 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 13 Typ. Avalanche characteristics 14 Typ. Avalanche Energy I AS=f(t AV); R GS=25 Ω E AS=f(T j); VDD = 25 V; RGS=25 Ω parameter: T j(start) parameter: I D 100 800 80 A C °25 700 C °100 C °150 600 E AS [mJ] I AV [A] 500 10 400 300 200 100 0 1 1 10 100 0 1000 50 100 t AV [µs] 150 200 T j [°C] 15 Typ. gate charge 16 Drain-source breakdown voltage V GS=f(Q gate); I D=80 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 64 12 V 11 V 44 62 10 60 V BR(DSS) [V] V GS [V] 8 6 58 56 4 54 2 52 50 0 0 20 40 60 80 100 120 140 Q gate [nC] Rev. 1.0 -60 -20 20 60 100 140 180 T j [°C] page 7 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2005-06-28