SPN03N60S5

SPN03N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS(on) 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3 2 1 Type SPN03N60S5 Package SOT-223 Ordering Code Q67040-S4203 VPS05163 Marking 03N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TA = 25 °C 0.7 TA = 70 °C 0.4 3 Pulsed drain current, tp limited by Tjmax TA = 25 °C ID puls Gate source voltage VGS ±20 Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T A = 25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C Rev. 2.2 Page 1 V 2005-02-21 SPN03N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 3.2 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. - 25 - @ min. footprint - 110 62 @ 6 cm2 cooling area 1) - - 70 - - 260 Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA Soldering temperature, Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=3.2A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=135µΑ, VGS=V DS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Rev. 2.2 µA Tj=25°C, - 0.5 1 Tj=150°C - - 50 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=2A, Tj=25°C - 1.26 1.4 Tj=150°C - 3.4 - Page 2 nA 2005-02-21 SPN03N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 0.73 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=0.4A Input capacitance Ciss V GS=0V, V DS=25V, - 440 - Output capacitance Coss f=1MHz - 230 - Reverse transfer capacitance Crss - 12 - Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 35 - Rise time tr ID=0.7 A, RG=20Ω - 20 - Turn-off delay time t d(off) - 120 - Fall time tf - 30 - - 3 - - 7.5 - - 12.8 - - 8 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=350V, ID=0.7 A VDD=350V, ID=0.7 A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=0.7 A V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.2 Page 3 2005-02-21 SPN03N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous Symbol IS Conditions TA=25°C Values Unit min. typ. max. - - 0.7 - - 3 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 0.85 1.05 V Reverse recovery time trr VR=350V, IF =IS , - 200 - ns Reverse recovery charge Qrr di F/dt=100A/µs - 0.9 - µC Rev. 2.2 Page 4 2005-02-21 SPN03N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TA) ID = f ( V DS ) parameter : D = 0 , T A=25°C 1.9 10 1 SPN03N60S5 W A 1.6 10 0 1.2 ID Ptot 1.4 1 10 -1 0.8 0.6 10 -2 0.4 0.2 0 0 20 40 60 80 100 120 °C tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -3 0 10 160 10 1 10 2 10 V VDS TA 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 2 8.5 K/W A 7 6 ID Z thJC 10 1 10 0 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 9V 5 4 3 2 7V 1 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 s 10 1 tp Rev. 2.2 0 0 4 8 12 16 20 V 26 VDS Page 5 2005-02-21 3 SPN03N60S5 5 Drain-source on-state resistance 6 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 0.4 A, VGS = 10 V parameter: tp = 10 µs 8 SPN03N60S5 8 A 6 6 ID RDS(on) Ω 5 5 4 4 3 3 2 2 98% typ 1 1 0 -60 -20 20 60 100 °C 0 0 180 4 8 V 12 20 VGS Tj 7 Typ. gate charge 8 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD) parameter: ID = 0.7 A pulsed parameter: Tj , tp = 10 µs 16 10 1 SPN03N60S5 V A 0.2 VDS max 0.8 VDS max 10 0 10 IF VGS 12 SPN03N60S5 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 2 4 6 8 10 12 14 16 nC 10 -2 0 20 QGate Rev. 2.2 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2005-02-21 SPN03N60S5 9 Drain-source breakdown voltage 10 Typ. capacitances V(BR)DSS = f (Tj) C = f (VDS) parameter: V GS=0V, f=1 MHz 720 10 4 SPN03N60S5 pF V Ciss 660 C V(BR)DSS 10 3 680 10 2 640 Coss 620 10 1 600 Crss 580 10 0 560 540 -60 -20 20 60 100 °C 180 Tj 10 -1 0 10 20 30 40 50 60 70 80 V 100 VDS Definition of diodes switching characteristics Rev. 2.2 Page 7 2005-02-21 SPN03N60S5 SOT223 1.6 ±0.1 6.5 ±0.2 0.1 max +0.2 acc. to DIN 6784 1 2 3 3.5 ±0.2 4 0.5 min B 7 ±0.3 3 ±0.1 15˚max A 0.28 ±0.04 2.3 0.7 ±0.1 4.6 0.25 Rev. 2.2 M A 0.25 Page 8 M B 2005-02-21 SPN03N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 Page 9 2005-02-21