SPP03N60S5XKSA1

SPP03N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS(on) 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1 • Improved transconductance 23 P-TO220-3-1 Type Package Ordering Code SPP03N60S5 PG-TO220 Q67040-S4184 Marking 03N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 3.2 TC = 100 °C 2 Pulsed drain current, tp limited by Tjmax I D puls 5.7 Avalanche energy, single pulse EAS 100 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.2 mJ I D = 2.4 A, VDD = 50 V I D = 3.2 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 3.2 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 38 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.7 Page 1 2009-11-26 SPP03N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 3.2 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 3.3 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=3.2A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=135µΑ, VGS=V DS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Rev. 2.7 µA Tj=25°C, - 0.5 1 Tj=150°C - - 70 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=2A, Tj=25°C - 1.26 1.4 Tj=150°C - 3.4 - Page 2 nA 2009-11-26 SPP03N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 1.8 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=2A Input capacitance Ciss V GS=0V, V DS=25V, - 420 - Output capacitance Coss f=1MHz - 150 - Reverse transfer capacitance Crss - 3.6 - Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 35 Rise time tr ID=3.2A, RG=20Ω - 25 Turn-off delay time t d(off) - 40 Fall time tf - 15 22.5 - 3.5 - - 7 - - 12.4 16 - 8 - ns - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=350V, ID=3.2A VDD=350V, ID=3.2A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=3.2A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow Rev. 2.7 Page 3 2009-11-26 SPP03N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 3.2 - - 5.7 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF =IS , - 1000 1700 ns Reverse recovery charge Qrr di F/dt=100A/µs - 2.3 - µC Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.054 R th2 Cth1 0.00005232 0.103 Cth2 0.0002034 R th3 0.178 Cth3 0.0002963 R th4 0.757 Cth4 0.0009103 R th5 0.682 Cth5 0.002084 R th6 0.202 Cth6 0.024 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.7 Page 4 2009-11-26 SPP03N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 40 10 1 SPP03N60S5 W A 32 10 0 ID Ptot 28 24 20 16 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 12 8 4 0 0 20 40 60 80 100 °C 120 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 10 A K/W 10V 20V 12V 7 10 0 ID ZthJC 8 6 9V 5 8.5V 4 10 -1 8V 3 7.5V 2 7V 1 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Rev. 2.7 0 0 6.5V 5 10 15 V 25 VDS Page 5 2009-11-26 3 SPP03N60S5 5 Drain-source on-state resistance 6 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 2 A, VGS = 10 V parameter: tp = 10 µs 8 SPP03N60S5 8 A 6 6 ID RDS(on) Ω 5 5 4 4 3 3 2 2 98% typ 1 1 0 -60 -20 20 60 °C 100 0 0 180 4 8 V 12 20 VGS Tj 7 Typ. gate charge 8 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 3.2 A pulsed parameter: Tj , tp = 10 µs 16 10 1 SPP03N60S5 V SPP03N60S5 A 0.2 VDS max 10 0 10 IF VGS 12 0.8 VDS max 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 2 4 6 8 10 12 14 16 nC 19 QGate Rev. 2.7 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2009-11-26 SPP03N60S5 9 Avalanche SOA 10 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 2.4 A, V DD = 50 V 3.5 120 A mJ Tj(START) =25°C IAR EAS 2.5 80 2 60 1.5 Tj(START) =125°C 40 1 20 0.5 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 0 20 4 40 60 80 100 120 °C 160 Tj 11 Drain-source breakdown voltage 12 Typ. capacitances V(BR)DSS = f (Tj) C = f (VDS) parameter: V GS=0V, f=1 MHz 720 10 4 SPP03N60S5 pF 680 10 3 Ciss 660 C V(BR)DSS V 640 10 2 Coss 620 600 10 1 580 Crss 560 540 -60 -20 20 60 100 °C 180 Tj Rev. 2.7 10 0 0 10 20 30 40 50 60 70 80 V 100 VDS Page 7 2009-11-26 SPP03N60S5 Definition of diodes switching characteristics Rev. 2.7 Page 8 2009-11-26 SPP03N60S5 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.7 Page 9 2009-11-26 SPP03N60S5 Rev. 2.7 Page 10 2009-11-26