SPP07N60CFDHKSA1

SPP07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS(on),max 0.7 " ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability • Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: • Soft switching PWM Stages • LCD & CRT TV Type Package Marking SPP07N60CFD PG-TO220 07N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 6.6 T C=100 °C 4.3 Pulsed drain current2) I D,pulse T C=25 °C 17 Avalanche energy, single pulse E AS I D=3.3 A, V DD=50 V 230 Avalanche energy, repetitive2),3) E AR I D=6.6 A, V DD=50 V 0.5 Avalanche current, repetitive2),3) I AR Drain source voltage slope dv /dt Reverse diode dv /dt dv /dt Maximum diode commutation speed Gate source voltage mJ 6.6 A 80 V/ns 40 V/ns di /dt 600 A/µs V GS static ±20 V AC (f >1 Hz) ±30 T C=25 °C 83 W -55 ... 150 °C P tot Operating and storage temperature T j, T stg Rev. 1.4 A I S=6.6 A, V DS=480 V, T j=125 °C Power dissipation Mounting torque I D=6.6 A, V DS=480 V, T j=125°C Unit M3 & M3.5 screws page 1 60 Ncm 2009-11-27 SPP07N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 1.5 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wave soldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=6.6 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=300 µA 3 4 5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 0.6 - V DS=600 V, V GS=0 V, T j=150 °C - 630 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=4.6 A, T j=25 °C - 0.59 0.7 " V GS=10 V, I D=4.6 A, T j=150 °C - 1.6 - Gate resistance RG f =1 MHz, open drain - 1.2 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=4.6 A - 5.0 - Rev. 1.4 page 2 S 2009-11-27 SPP07N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - 790 - - 260 - - 16 - - 30 - Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=25 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy related4) C o(er) Effective output capacitance, time related5) C o(tr) - 55 - Turn-on delay time t d(on) - 12 - Rise time tr - 25 - Turn-off delay time t d(off) - 36 - Fall time tf - 9 - Gate to source charge Q gs - 6.6 - Gate to drain charge Q gd - 20 - Gate charge total Qg - 35 47 Gate plateau voltage V plateau - 7.2 - pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=6.6 A, R G=6.8 " ns Gate Charge Characteristics V DD=480 V, I D=6.6A, V GS=0 to 10 V 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 1.4 page 3 nC V 2009-11-27 SPP07N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 6.6 - - 17 - 1.0 1.2 V - 104 200 ns - 0.5 1.42 µC - 8 - A - 1000 - A/µs Reverse Diode Diode continuous forward current IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm Peak rate of fall of reverse recovery current di rr / dt Rev. 1.4 A T C=25 °C V GS=0 V, I F=I S, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs T j=25 °C page 4 2009-11-27 SPP07N60CFD 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 90 limited by on-state resistance 80 70 1 µs 101 60 50 I D [A] P tot [W] 10 µs 40 100 µs DC 30 10 1 ms 0 10 ms 20 10 10-1 0 0 40 80 120 100 160 101 102 103 V DS [V] T C [°C] 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 101 20 20 V 15 10 V I D [A] 0.5 Z thJC [K/W] 10 0 0.2 0.1 8V 10 0.05 10-1 0.02 0.01 7V 5 single pulse 6.5 V 6V 5.5 V 10-2 10-5 10-4 10-3 10-2 10-1 t p [s] Rev. 1.4 5V 0 0 5 10 15 20 V DS [V] page 5 2009-11-27 SPP07N60CFD 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 2.8 12 20 V 10 10 V 8V 6 R DS(on) [ ] I D [A] 8 2.4 7V 7V 6.5 V 2 6V 5V 5.5 V 6.5 V 4 2 10 V 1.6 6V 20 V 5.5 V 5V 1.2 0 0 5 10 15 0 20 2 4 V DS [V] 6 8 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=4.6 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 2 24 1.8 25 °C 20 1.6 1.4 I D [A] R DS(on) [ ] 16 1.2 1 0.8 12 150 °C typ 98 % 8 0.6 0.4 4 0.2 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.4 0 4 8 12 16 20 V GS [V] page 6 2009-11-27 SPP07N60CFD 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=6.6 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 120 V 8 480 V 10 150 °C, 98% 25 °C 1 6 I F [A] V GS [V] 150 °C 25 °C, 98% 4 100 2 10 0 0 5 10 15 20 25 -1 0 30 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=3.3 A; V DD=50 V parameter: T j(start) 7 250 6 200 150 4 3 125 °C E AS [mJ] I AV [A] 5 25 °C 100 2 50 1 0 10-3 0 10-2 10-1 100 101 102 103 104 t AR [µs] Rev. 1.4 25 50 75 100 125 150 175 T j [°C] page 7 2009-11-27 SPP07N60CFD 14 Typ. capacitances V BR(DSS)=f(T j); C =f(V DS); V GS=0 V; f =1 MHz 700 104 660 103 C [pF] V BR(DSS) [V] 13 Drain-source breakdown voltage 620 Ciss 102 Coss 101 580 10 540 -60 -20 20 60 100 140 Crss 0 0 180 100 T j [°C] 200 300 400 500 V DS [V] 15 Typ. C oss stored energy 16 Typ. reverse recovery charge E oss= f(V DS) Q rr=f(T j);parameter: I D =6.6 A 6 0.7 5 0.65 Q rr [µC] E oss [µJ] 4 3 0.6 2 0.55 1 0 0.5 0 100 200 300 400 500 600 V DS [V] Rev. 1.4 25 50 75 100 125 T j [°C] page 8 2009-11-27 SPP07N60CFD 17 Typ. reverse recovery charge 18 Typ. reverse recovery charge Q rr=f(I S); parameter: di/ dt =100 A/µs Q rr=f(di /dt ); parameter: I D=6.6 A 0.8 1.1 0.7 1 125 °C 0.9 Q rr [µC] Q rr [µC] 0.6 0.5 125 °C 0.8 0.7 0.4 25 °C 25 °C 0.6 0.3 0.5 0.2 2 3 4 5 6 I S [A] Rev. 1.4 100 300 500 700 900 d i/d t [A/µs] page 9 2009-11-27 SPP07N60CFD Definition of diode switching characteristics Rev. 1.4 page 10 2009-11-27 SPP07N60CFD PG-TO-220-3-1; -3-21 Dimensions in mm/ inches Rev. 1.4 page 11 2009-11-27 SPP07N60CFD  ( % )-&.1, !3).- ' )5 % - )- 3( )2 $ !3!2( % % 32( !++)- -. % 5 % -3" % 1% ' !1$ % $ !2 !' 4!1!-3% % .& # .-$ )3).-2 . # ( !1!# 3% 1)23)# 2 <  % 2# ( !&&% -( % )32' !1!-3)% = )3( 1% 2/% # 33. !-8% 7!, /+% 2 .1( )-32 ' )5 % - ( % 1% )- !-838/)# ! 5 !+4% 2 23!3% $ ( % 1% )- !-$ 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