SPP100N08S2-07

SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS(on) max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code Marking SPP100N08S2-07 P- TO220 -3-1 Q67060-S6044 PN0807 SPB100N08S2-07 P- TO263 -3-2 Q67060-S6046 PN0807 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) Value Unit A ID 100 TC=25°C 100 ID puls 400 EAS 810 Repetitive avalanche energy, limited by Tjmax 2) EAR 30 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 300 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=80 , VDD=25V, RGS=25Ω kV/µs IS=100A, VDS=60V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-05-09 SPP100N08S2-07 SPB100N08S2-07 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.3 0.5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 75 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID =250µA Zero gate voltage drain current µA IDSS V DS=75V, VGS=0V, Tj=25°C - 0.01 1 V DS=75V, VGS=0V, Tj=125°C - 1 100 - 1 100 Gate-source leakage current IGSS nA V GS=20V, VDS=0V Drain-source on-state resistance RDS(on) mΩ V GS=10V, I D=66A - 5.6 7.1 V GS=10V, I D=66A, SMD version - 5.3 6.8 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 133A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPP100N08S2-07 SPB100N08S2-07 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 56 112 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =100A Input capacitance Ciss VGS =0V, VDS =25V, - 4530 6020 pF Output capacitance Coss f=1MHz - 1080 1440 Reverse transfer capacitance Crss - 450 680 Turn-on delay time td(on) VDD =40V, VGS =10V, - 25 38 Rise time tr ID =100A, - 36 54 Turn-off delay time td(off) RG =2.2Ω - 68 100 Fall time tf - 36 55 - 25 33 - 82 120 - 153 200 V(plateau) VDD =60V, ID =100A - 5.5 - V IS - - 100 A - - 400 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =60V, ID =100A VDD =60V, ID =100A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =80A - 0.9 1.3 V Reverse recovery time trr VR =40V, IF =lS , - 90 110 ns Reverse recovery charge Qrr diF /dt=100A/µs - 290 360 nC Page 3 2003-05-09 SPP100N08S2-07 SPB100N08S2-07 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 6 V parameter: VGS≥ 10 V SPP100N08S2-07 320 SPP100N08S2-07 110 A W 90 80 ID P tot 240 200 70 60 160 50 120 40 30 80 20 40 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPP100N08S2-07 10 1 SPP100N08S2-07 K/W t = 15.0µs p A 0 V DS 2 100 µs 10 -1 10 -2 R DS (on ) ID = 10 Z thJC /I D 10 D = 0.50 1 ms 10 1 0.20 10 -3 0.10 0.05 0.02 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -5 10 single pulse -7 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-05-09 0 SPP100N08S2-07 SPB100N08S2-07 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPP100N08S2-07 240 SPP100N08S2-07 24 Ptot = 300W A Ω V [V] GS a 200 180 ID 160 h 140 g 120 100 5.0 c 5.3 d 5.5 e 5.8 f 6.0 g 6.3 h 6.5 i 10.0 40 a 0 1 2 3 16 6 i 4 VGS [V] = e 5.8 2 b f 6.0 g 6.3 h i 6.5 10.0 40 60 0 V 4 18 8 c 0 6 0 20 80 100 120 A 160 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 220 120 A S 180 100 90 g fs 160 ID h 10 d 20 g 12 e 60 f 14 f 80 e 20 4.8 b R DS(on) i 140 80 70 120 60 100 50 80 40 60 30 40 20 20 10 0 0 1 2 3 4 5 0 V 7 0 20 40 60 80 100 A 140 ID VGS Page 5 2003-05-09 SPP100N08S2-07 SPB100N08S2-07 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 66 A, VGS = 10 V parameter: VGS = VDS SPP100N08S2-07 28 4 Ω V 24 1.35 mA V GS(th) R DS(on) 22 20 18 3 270 µA 2.5 16 14 2 12 1.5 10 98% 8 1 typ 6 4 0.5 2 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 5 10 pF A 10 2 10 1 IF 4 C 10 3 SPP100N08S2-07 Ciss Coss 10 3 Crss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 0 10 5 10 15 20 V 30 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD V DS Page 6 2003-05-09 SPP100N08S2-07 SPB100N08S2-07 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 80 , V DD = 25 V, R GS = 25 Ω parameter: ID = 100 A pulsed 850 SPP100N08S2-07 16 mJ V 700 VGS E AS 12 600 500 0,2 VDS max 10 0,8 VDS max 8 400 6 300 200 4 100 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 20 40 60 80 100 120 140 160 180nC 210 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 92 SPP100N08S2-07 V V(BR)DSS 88 86 84 82 80 78 76 74 72 70 68 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPP100N08S2-07 SPB100N08S2-07 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP100N08S2-07 and BSPB100N08S2-07, for simplicity the device is referred to by the term SPP100N08S2-07 and SPB100N08S2-07 throughout this documentation. Page 8 2003-05-09