SPP15P10PLHXKSA1

SPP15P10PL H SIPMOS® Power-Transistor Product Summary Features V DS -100 V • P-Channel R DS(on),max 0.20 : • Enhancement mode ID -15 A • logic level • Avalanche rated PG-TO220-3 • Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type Package Marking Lead free Packing SPP15P10PL H PG-TO220-3 15P10PL Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C -15 T C=100 °C 11.3 Unit A Pulsed drain current I D,pulse T C=25 °C -60 Avalanche energy, single pulse E AS I D=-15 A, R GS=25 : 230 mJ Gate source voltage V GS ±20 V Power dissipation P tot 128 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C 1C (1kV to 2kV) ESD Class 260 °C Soldering temperature 55/175/56 IEC climatic category; DIN IEC 68-1 Rev 1.4 Value page 1 2011-09-01 SPP15P10PL H Parameter Values Symbol Conditions Unit min. typ. max. - - 1.17 minimal footprint, steady state - - 75 6 cm2 cooling area1), steady state - - 45 -100 - - Thermal characteristics Thermal resistance, junction - soldering point R thJC Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 mA Gate threshold voltage V GS(th) V DS=V GS, I D=1.54 mA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS=-100 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-100 V, V GS=0 V, T j=150 °C - -10 -100 V μA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-9.7 A - 190 270 m: V GS=-10 V, I D=-11.3 A - 140 200 m: 5.5 11.0 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-11.3 A S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air. Rev 1.4 page 2 2011-09-01 SPP15P10PL H Parameter Values Symbol Conditions Unit min. typ. max. - 1120 1490 - 272 362 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=-25 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance C rss - 120 180 Turn-on delay time t d(on) - 7.6 11 Rise time tr - 21 31 Turn-off delay time t d(off) - 50 75 Fall time tf - 29 44 Gate to source charge Q gs - 4.3 5.7 Gate to drain charge Q gd - 17 26 Gate charge total Qg - 47 62 Gate plateau voltage V plateau - 4.0 - V - - -15 A - - -60 - -0.96 -1.35 V - 110 165 ns - 450 675 nC V DD=-50 V, V GS=10 V, I D=-15 A, R G=6 : ns Gate Charge Characteristics 2) V DD=-80 V, I D=-15 A, V GS=0 to -10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge 2) Rev 1.4 Q rr T C=25 °C V GS=0 V, I F=-15 A, T j=25 °C V R=50 V, I F=|I S|, di F/dt =100 A/μs See figure 16 for gate charge parameter definition page 3 2011-09-01 SPP15P10PL H 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); |V GS|•10 V 16 140 120 12 80 -I D [A] P tot [W] 100 8 60 40 4 20 0 0 0 40 80 120 0 160 40 T A [°C] 80 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 102 101 limited by on-state resistance 10 μs 100 μs 101 100 10 ms -I D [A] 0.5 Z thJS [K/W] 1 ms DC 0.2 0.1 0.05 100 10-1 0.02 0.01 single pulse 10-1 10-2 10 0 10 1 10 2 10 3 -V DS [V] Rev 1.4 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2011-09-01 SPP15P10PL H 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 40 500 -10 V -6 V -3 V -8 V 35 -4.5 V -3.5 V -2.5 V 30 400 -I D [A] R DS(on) [m:] -4.5 V 25 20 15 300 -3.5 V 10 200 -6 V -3 V 5 -8 V -10 V -2.5 V 0 100 - 0 2 4 6 8 10 0 10 -V DS [V] 20 30 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 30 20 25 °C 25 15 125 °C g fs [S] -I D [A] 20 15 10 10 5 5 0 0 1 2 3 4 5 Rev 1.4 0 5 10 15 20 25 30 -I D [A] -V GS [V] page 5 2011-09-01 SPP15P10PL H 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-11.3 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-1.54 mA 400 3 300 max. 98 % -V GS(th) [V] R DS(on) [m:] 2 200 typ. 1 min. typ. 100 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 102 25 °C, typ 175 °C, 98% 101 I F [A] 25 °C, 98% C [pF] 10 175 °C, typ Ciss 3 Coss 100 102 Crss 10-1 101 10-2 0 20 40 60 80 0 -V DS [V] Rev 1.4 0.5 1 1.5 -V SD [V] page 6 2011-09-01 SPP15P10PL H 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 : V GS=f(Q gate); I D=-15 A pulsed parameter: T j(start) parameter: V DD 10 50 V 8 20 V 80 V 25 °C 101 100 °C 6 - VGS [V] -I AV [A] 125 °C 4 100 2 10-1 0 100 101 102 103 0 10 t AV [μs] 20 30 40 50 - Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-1mA 120 V GS Qg 115 -V BR(DSS) [V] 110 105 V g s(th) 100 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev 1.4 page 7 2011-09-01 SPP15P10PL H Package Outline: PG-TO-252-3 Rev 1.4 page 8 2011-09-01 SPP15P10PL H PG-TO220-3: Outline Rev 1.4 page 9 2011-09-01 SPP15P10PL  H  Rev. 1.4 page 10 2011-09-01