SPP18P06P H
SIPMOS® Small-Signal-Transistor
Product Summary
Features
VDS
• P-Channel
• Enhancement mode
-60
V
RDS(on),max
0.13
ID
-18.7
A
• Avalanche rated
• dv /dt rated
PG-TO220-3-1
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to AEC Q101
Type
Package
SPP18P06PH
PG-TO220-3
Tape and reel information
50pcs/tube
Marking
18P06P
Lead free
Yes
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
steady state
Continuous drain current
ID
T A=25 °C
-18.7
T A=100 °C
-13.2
-74.8
Pulsed drain current
I D,pulse
T A=25 °C
Avalanche energy, single pulse
E AS
I D=18.7 A, R GS=25
Avalanche energy, periodic limited by
E AR
Tjmax
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
151
mJ
8
I D=18.7 A, V DS=48 V,
di /dt =-200 A/µs,
T j,max=175 °C
T A=25 °C1)
-6
kV/µs
±20
V
81.1
W
"-55 ... +175"
°C
Class 1C( >1000V 2|I D|R DS(on)max,
I D=-13.2 A
5
10
-
S
1)
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical without blown air.
Rev1.92
page 2
2014-11-21
SPP18P06P H
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
690
860
-
230
290
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
95
120
Turn-on delay time
t d(on)
-
12.0
18.0
Rise time
tr
-
5.8
8.7
Turn-off delay time
t d(off)
-
25
37
Fall time
tf
-
11
16.5
Gate to source charge
Q gs
-
-4.1
-5.5
Gate to drain charge
Q gd
-
-11
-17
Gate charge total
Qg
-
-21
-28
Gate plateau voltage
V plateau
-
-5.94
-
V
-
-
18.60
A
-
-
-74.8
-
-0.99
-1.33
V
-
70
105
ns
-
139
208
nC
V GS=0 V, V DS=-25 V,
f =1 MHz
V DD=-30 V, V GS=10 V, I D=-13.2 A,
R G=2.7 Ω
pF
ns
Gate Charge Characteristics
V DD=-48 V, I D=18.6 A, V GS=0 to -10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Rev1.92
Q rr
T A=25 °C
V GS=0 V, I F=-18.6 A,
T j=25 °C
V R=30 V, I F=|I S|,
di F/dt =100 A/µs
page 3
2014-11-21
SPP18P06P H
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); |V GS|≥10 V
20
90
80
70
15
50
-I D [A]
P tot [W]
60
40
10
30
5
20
10
0
0
0
40
80
120
0
160
40
80
T A [°C]
120
160
T A [°C]
3 Safe operating area
4 Max. transient thermal impedance
1)
I D=f(V DS); T A=25 °C ; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
101
10 µs
100 µs
limited by on-state
resistance
1 ms
101
10 ms
0.5
100
10
Z thJS [K/W]
-I D [A]
DC
0
0.2
0.1
0.05
10-1
10
10-1
0.02
-5
0.01 10
-4
10-3
10-2
10-1
100
101
102
single pulse
10-2
0.1
1
10
100
t p [s]
-V DS [V]
Rev1.92
page 4
2014-11-21
SPP18P06P H
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
40
400
-20 V
35
-10 V
320
30
-4 V
-4.5 V
-7 V
R DS(on) [mΩ]
-I D [A]
20
-5.5 V
-5 V
25
-6 V
15
-6 V
240
-7 V
160
-5.5 V
10
-10 V
-5 V
-20 V
80
5
-4.5 V
-4 V
0
0
0
2
4
6
0
8
5
10
15
-V DS [V]
20
25
30
35
-I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
8
14
12
6
g fs [S]
-I D [A]
10
4
8
6
4
2
125 °C
25 °C
2
0
0
0
1
2
3
4
5
Rev1.92
0
5
10
15
20
25
30
-I D [A]
-V GS [V]
page 5
2014-11-21
SPP18P06P H
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-13.2 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-1000 µA
4
350
3.5
300
3
max.
2.5
200
-V GS(th) [V]
R DS(on) [mΩ]
250
98 %
150
typ.
2
min.
1.5
typ.
100
1
50
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
25 °C, typ
103
101
150 °C, typ
I F [A]
C [pF]
Ciss
Coss
102
100
Crss
150 °C, 98%
25 °C, 98%
101
10-1
0
5
10
15
20
25
-V DS [V]
Rev1.92
0
0.5
1
1.5
2
2.5
3
-V SD [V]
page 6
2014-11-21
SPP18P06P H
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=-18.6 A pulsed
parameter: T j(start)
parameter: V DD
10
2
16
14
12
25 °C
12 V
V GS [V]
-I AV [A]
10
100 °C
101
125 °C
30 V
48 V
8
6
4
2
0
0
100
10
0
10
1
t AV [µs]
10
2
10
15 Drain-source breakdown voltage
5
10
15
20
25
30
Q gate [nC]
3
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-250 µA
70
V GS
Qg
-V BR(DSS) [V]
65
60
V g s(th)
55
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev1.92
page 7
2014-11-21
SPP18P06P H
Package Outline: PG-TO220-3
Rev1.92
page 8
2014-11-21
SPP18P06P H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev1.92
page 9
2014-11 21
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