SPP24N60CFDHKSA1

SPP24N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge 650 V R DS(on),max 0.185 " ID 21.7 A • Ultra low gate charge PG-TO220 • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • CoolMOS CFD designed for • Softswitching PWM Stages • LCD & CRT TV Type Package Marking SPP24N60CFD TO-220 PG-TO220 24N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 21.7 T C=100 °C 13.7 Pulsed drain current2) I D,pulse T C=25 °C 55 Avalanche energy, single pulse E AS I D=10A, V DD=50 V 780 Avalanche energy, repetitive2),3) E AR I D=20A, V DD=50 V 1 Avalanche current, repetitive2),3) I AR Drain source voltage slope dv /dt Reverse diode dv /dt dv /dt Maximum diode commutation speed Gate source voltage mJ 20 A 80 V/ns 40 V/ns di /dt 600 A/µs V GS static ±20 V AC (f >1 Hz) ±30 T C=25 °C 240 W -55 ... 150 °C P tot Operating and storage temperature T j, T stg Rev. 1.3 A I S=21.7A, V DS=480 V, T j=125°C Power dissipation Mounting torque I D=21.7A, V DS=480V, T j=125°C Unit M3 & M3.5 screws page 1 60 Ncm 2009-12-01 SPP24N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 0.52 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wave soldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=21.7 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=1.2 mA 3 4 5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 2.5 - V DS=600 V, V GS=0 V, T j=150 °C - 2600 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=15.4 A, T j=25 °C - 0.15 0.185 " V GS=10 V, I D=15.4 A, T j=150 °C - 0.42 - Gate resistance RG f =1 MHz, open drain - 0.8 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=15.4 A - 14.0 - Rev. 1.3 page 2 S 2009-12-01 SPP24N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - 3160 - - 900 - - 34 - - 103 - Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=25 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy related4) C o(er) Effective output capacitance, time related5) C o(tr) - 188 - Turn-on delay time t d(on) - 50 - Rise time tr - 24 - Turn-off delay time t d(off) - 100 - Fall time tf - 9 - Gate to source charge Q gs - 15 - Gate to drain charge Q gd - 67 - Gate charge total Qg - 110 143 Gate plateau voltage V plateau - 7.3 - pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D= 21.7A, R G=6.8 " ns Gate Charge Characteristics V DD=480 V, I D=21.7 A, V GS=0 to 10 V 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 1.3 page 3 nC V 2009-12-01 SPP24N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 21.7 - - 55 - 1.0 1.2 V - 140 - ns - 0.9 - µC - 11 - A Reverse Diode Diode continuous forward current IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm Rev. 1.3 A T C=25 °C V GS=0 V, I F=I S, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs page 4 2009-12-01 SPP24N60CFD 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 250 102 limited by on-state resistance 1 µs 10 µs 200 100 µs 101 1 ms DC I D [A] P tot [W] 150 10 ms 100 100 50 10-1 0 0 40 80 120 100 160 101 102 103 V DS [V] T C [°C] 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 100 50 20 V 45 10 V 40 8V 0.5 30 0.2 10 I D [A] Z thJC [K/W] 35 -1 0.1 25 7V 20 0.05 15 0.02 6.5 V 10 0.01 6V single pulse 10 5 -2 10-5 0 10-4 10-3 10-2 10-1 0 5 10 15 20 V DS [V] t p [s] Rev. 1.3 5.5 V 5V page 5 2009-12-01 SPP24N60CFD 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 35 1.2 20 V 10 V 30 8V 1 25 R DS(on) [ ] 7V I D [A] 20 6.5 V 15 0.8 0.6 5V 5.5 V 6.5 V 6V 7V 6V 10 10 V 20 V 0.4 5.5 V 5 5V 0 0.2 0 5 10 15 20 0 5 10 V DS [V] 15 20 25 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=15.4 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.6 80 25 °C 0.5 60 I D [A] R DS(on) [ ] 0.4 0.3 150 °C 40 98 % 0.2 typ 20 0.1 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.3 0 2 4 6 8 10 12 14 V GS [V] page 6 2009-12-01 SPP24N60CFD 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=21.7 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 120 V 150 °C, 98% 8 480 V 25 °C 10 1 6 I F [A] V GS [V] 150 °C 25 °C, 98% 4 100 2 10 0 0 25 50 75 100 -1 0 125 0.5 Q gate [nC] 1 1.5 2 V SD [V] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=10 A; V DD=50 V parameter: T j(start) 20 800 700 16 600 500 125 °C E AS [mJ] I AV [A] 12 25 °C 8 400 300 200 4 100 0 10-3 0 10-2 10-1 100 101 102 103 104 t AR [µs] Rev. 1.3 25 50 75 100 125 150 175 200 T j [°C] page 7 2009-12-01 SPP24N60CFD 13 Drain-source breakdown voltage 14 Typ. capacitances V BR(DSS)=f(T j); I D=10 mA C =f(V DS); V GS=0 V; f =1 MHz 104 700 Ciss 103 C [pF] V BR(DSS) [V] 660 620 102 Coss Crss 101 580 10 540 -60 -20 20 60 100 140 0 0 180 100 T j [°C] 200 300 400 500 V DS [V] 15 Typ. C oss stored energy 16 Typ. reverse recovery charge E oss= f(V DS) Q rr=f(T j);parameter: I D =21.7 A 18 1.2 15 1.1 Q rr [µC] E oss [µJ] 12 9 1 6 0.9 3 0 0.8 0 100 200 300 400 500 600 V DS [V] Rev. 1.3 25 50 75 100 125 T j [°C] page 8 2009-12-01 SPP24N60CFD 17 Typ. reverse recovery charge 18 Typ. reverse recovery charge Q rr=f(I S); parameter: di/ dt =100 A/µs Q rr=f(di /dt ); parameter: I D=21.7 A 1.2 2.4 1 2 125 °C Q rr [µC] Q rr [µC] 125 °C 0.8 25 °C 1.6 25 °C 1.2 0.6 0.8 0.4 5 9 13 17 21 I S [A] Rev. 1.3 100 200 300 400 500 600 d i/d t [A/µs] page 9 2009-12-01 SPP24N60CFD Definition of diode switching characteristics Rev. 1.3 page 10 2009-12-01 SPP24N60CFD PG-TO-220-3-1; -3-21 Dimension in mm/ inches Rev. 1.3 page 11 2009-12-01 SPP24N60CFD Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 12 2009-12-01