SPP80N03S2-03

SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS(on) max. SMD version 3.1 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID 80 A • Superior thermal resistance P- TO263 -3-2 P- TO262 -3-1 P- TO220 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N03S2-03 Package P- TO220 -3-1 Ordering Code Q67040-S4247 Marking SPB80N03S2-03 P- TO263 -3-2 Q67040-S4258 2N0303 SPI80N03S2-03 P- TO262 -3-1 Q67042-S4079 2N0303 2N0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) Value Unit A ID 80 TC=25°C 80 ID puls 320 EAS 810 Repetitive avalanche energy, limited by Tjmax 2) EAR 30 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 300 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=80 A , V DD=25V, RGS=25Ω kV/µs IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C TC=25°C Operating and storage temperature T j , Tstg 55/175/56 IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.3 0.5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=250µA Zero gate voltage drain current µA IDSS V DS=30V, VGS=0V, Tj=25°C - 0.01 1 V DS=30V, VGS=0V, Tj=125°C - 1 100 - 1 100 Gate-source leakage current IGSS nA V GS=20V, VDS=0V Drain-source on-state resistance 4) RDS(on) mΩ V GS=10V, I D=80A - 2.6 3.4 V GS=10V, I D=80A, SMD version - 2.3 3.1 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-05-09 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 66 132 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =80A Input capacitance Ciss VGS =0V, VDS =25V, - 5280 7020 pF Output capacitance Coss f=1MHz - 2420 3220 Reverse transfer capacitance Crss - 470 700 Turn-on delay time td(on) VDD =15V, VGS =10V, - 22 33 Rise time tr ID =80A, - 325 490 Turn-off delay time td(off) RG =2.2Ω - 90 140 Fall time tf - 110 160 - 26 34 - 45 68 - 110 150 V(plateau) VDD = 24 V , ID =80A - 5.2 - V IS - - 80 A - - 320 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =80A VDD =24V, ID =80A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =80A - 0.9 1.3 V Reverse recovery time trr VR =15V, IF =lS , - 65 80 ns Reverse recovery charge Qrr diF /dt=100A/µs - 87 110 nC Page 3 2003-05-09 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 6 V parameter: VGS≥ 10 V SPP80N03S2-03 320 A W 70 ID 240 P tot SPP80N03S2-03 90 200 60 50 160 40 120 30 80 20 40 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPP80N03S2-03 10 1 SPP80N03S2-03 K/W 10 t = 16.0µs p 0 S(o n) ID =V D S Z thJC /I D A -1 10 -2 100 µs RD 10 10 2 D = 0.50 0.20 0.10 1 ms 0.05 10 0.02 -3 0.01 single pulse 10 1 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-05-09 0 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPP80N03S2-03 190 SPP80N03S2-03 12 Ptot = 300W mΩ A i h VGS [V] 140 ID g 120 100 f 80 c a 4.0 b 4.2 c 4.4 d 4.6 e 4.8 f 5.0 g 5.2 h 5.4 i 10.0 d e f g 10 R DS(on) 160 9 8 7 6 5 e 4 60 h 3 d i 40 2 c 20 VGS [V] = c 4.4 1 b d 4.6 e 4.8 f 5.0 g 5.2 h i 5.4 10.0 a 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4 0 5 0 20 40 60 80 100 120 A VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 180 320 S A 140 g fs 240 ID 150 ID 200 120 100 160 80 120 60 80 40 40 0 20 0 1 2 3 4 5 V 0 7 VGS 0 40 80 120 160 A 240 ID Page 5 2003-05-09 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 80 A, VGS = 10 V parameter: VGS = VDS SPP80N03S2-03 8.5 4 mΩ V V GS(th) R DS(on) 7 6 3 1.25 mA 2.5 5 250 µA 2 98% 4 1.5 3 typ 2 1 1 0.5 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 5 10 pF A 4 10 2 10 1 IF Ciss C 10 3 SPP80N03S2-03 Coss 10 3 T j = 25 °C typ T j = 175 °C typ Crss T j = 25 °C (98%) T j = 175 °C (98%) 10 2 0 10 5 10 15 20 V 30 VDS 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-05-09 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 80 A , V DD = 25 V, R GS = 25 Ω parameter: ID = 80 A pulsed 850 SPP80N03S2-03 16 mJ V 700 VGS E AS 12 600 500 0,2 VDS max 10 0,8 VDS max 8 400 6 300 200 4 100 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 20 40 60 80 100 120 nC 160 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPP80N03S2-03 V(BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N03S2-03, BSPB80N03S2-03 and BSPI80N03S2-03, for simplicity the device is referred to by the term SPP80N03S2-03, SPB80N03S2-03 and SPI80N03S2-03 throughout this documentation Page 8 2003-05-09