SPP80N06S2-H5

SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS(on) 5.5 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code Marking SPP80N06S2-H5 P- TO220 -3-1 Q67060-S6052 2N06H5 SPB80N06S2-H5 P- TO263 -3-2 Q67060-S6053 2N06H5 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) Value Unit A ID 80 TC=25°C 80 ID puls 320 EAS 700 Repetitive avalanche energy, limited by Tjmax 2) EAR 30 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 300 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=80 A , V DD=25V, RGS=25Ω kV/µs IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-05-09 SPP80N06S2-H5 SPB80N06S2-H5 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.34 0.5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=230µA Zero gate voltage drain current µA IDSS V DS=55V, VGS=0V, Tj=25°C - 0.01 1 V DS=55V, VGS=0V, Tj=125°C - 1 100 IGSS - 1 100 nA RDS(on) - 4.6 5.5 mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=80A 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 156A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPP80N06S2-H5 SPB80N06S2-H5 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 60 119 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =80A Input capacitance Ciss VGS =0V, VDS =25V, - 4400 5500 pF Output capacitance Coss f=1MHz - 1100 1460 Reverse transfer capacitance Crss - 280 420 Turn-on delay time td(on) VDD =30V, VGS =10V, - 23 34 Rise time tr ID =80A, - 23 35 Turn-off delay time td(off) RG =2.4Ω - 48 72 Fall time tf - 22 33 - 23 31 - 48 72 - 116 155 V(plateau) VDD =44V, ID =80A - 5.1 - V IS - - 80 A - - 320 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =44V, ID =80A VDD =44V, ID =80A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =80A - 0.9 1.3 V Reverse recovery time trr VR =30V, IF =lS , - 60 75 ns Reverse recovery charge Qrr diF /dt=100A/µs - 130 163 nC Page 3 2003-05-09 SPP80N06S2-H5 SPB80N06S2-H5 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 6 V parameter: VGS≥ 10 V SPP80N06S2-H5 320 SPP80N06S2-H5 90 A W 70 60 ID P tot 240 200 50 160 40 120 30 80 20 40 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPP80N06S2-H5 10 1 SPP80N06S2-H5 K/W A t = 10.0µs p 0 = 2 100 µs R ID DS (on ) 10 Z thJC V DS /I D 10 10 -1 10 -2 1 ms 10 D = 0.50 0.20 1 0.10 0.05 10 -3 0.02 single pulse 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-05-09 0 SPP80N06S2-H5 SPB80N06S2-H5 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPP80N06S2-H5 190 SPP80N06S2-H5 18 Ptot = 300W i g f h mΩ e 160 a 4.5 db 5.0 c 5.5 d 5.8 e 6.0 f 6.5 g 7.0 h 8.0 i 10.0 140 ID d e VGS [V] 120 c 100 80 14 R DS(on) A f 12 10 g 8 h 6 60 i b 4 40 VGS [V] = 2 20 d 5.8 a 0 0 1 2 3 4 V 5 e 6.0 f 6.5 g 7.0 h i 8.0 10.0 0 6.5 0 20 40 60 80 100 120 140 A 170 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 160 180 A S 140 gfs ID 120 100 120 100 80 80 60 60 40 40 20 20 0 0 1 2 3 4 5 0 7 V VGS 0 Page 5 20 40 60 80 100 120 140 160 A ID 200 2003-05-09 SPP80N06S2-H5 SPB80N06S2-H5 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 80 A, VGS = 10 V parameter: VGS = VDS SPP80N06S2-H5 4 18 mΩ V V GS(th) R DS(on) 14 12 3 1.15mA 2.5 10 2 230µA 8 98% 1.5 6 typ 1 4 0.5 2 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 5 10 pF 10 3 SPP80N06S2-H5 A 4 10 2 10 1 IF C Ciss Coss 10 3 T j = 25 °C typ Crss T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 0 10 5 10 15 20 V 30 VDS 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-05-09 SPP80N06S2-H5 SPB80N06S2-H5 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 80 A , V DD = 25 V, R GS = 25 Ω parameter: ID = 80 A pulsed 700 SPP80N06S2-H5 16 V mJ 12 EAS VGS 500 0,2 VDS max 10 0,8 VDS max 400 8 300 6 200 4 100 2 0 25 50 75 100 125 0 °C 175 Tj 0 20 40 60 80 100 120 nC 160 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 SPP80N06S2-H5 V(BR)DSS V 62 60 58 56 54 52 50 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPP80N06S2-H5 SPB80N06S2-H5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2-H5 and BSPB80N06S2-H5, for simplicity the device is referred to by the term SPP80N06S2-H5 and SPB80N06S2-H5 throughout this documentation. Page 8 2003-05-09