SPU01N60C3BKMA1

SPU01N60C3 SPD01N60C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPU01N60C3 PG-TO251 Q67040-S4193 01N60C3 SPD01N60C3 PG-TO252 Q67040-S4188 01N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 0.8 TC = 100 °C 0.5 Pulsed drain current, tp limited by Tjmax I D puls 1.6 Avalanche energy, single pulse EAS 20 mJ I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.01 I D = 0.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS 0.8 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 11 W Operating and storage temperature T j , T stg -55... +150 °C Reverse diode dv/dt 3) dv/dt Rev. 2.5 Page 1 15 V/ns 2008-04-07 SPU01N60C3 SPD01N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, I D = 0.8 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 11 Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area 2) - - 50 - - 260 Soldering temperature, *) Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=0.8A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=250µΑ, VGS=V DS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) µA Tj=25°C, - 0.1 1 Tj=150°C - - 50 V GS=30V, VDS=0V - - 100 nA Ω V GS=10V, ID=0.5A, Tj=25°C - 5.6 6 Tj=150°C - 15.1 - *) TO252: reflow soldering, MSL3; TO251: wavesoldering Rev. 2.5 Page 2 2008-04-07 SPU01N60C3 SPD01N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 0.75 - S pF ID=0.5A Input capacitance Ciss V GS=0V, V DS=25V, - 100 - Output capacitance Coss f=1MHz - 40 - Reverse transfer capacitance Crss - 2.5 - Turn-on delay time td(on) V DD=350V, V GS=0/10V, - 30 - Rise time tr ID=0.8A, RG=100Ω - 25 - Turn-off delay time td(off) - 55 82 Fall time tf - 30 45 - 0.9 - - 2.2 - - 3.9 5 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=350V, ID=0.8A V DD=350V, ID=0.8A, nC V GS=0 to 10V Gate plateau voltage V(plateau) V DD=350V, ID=0.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3I