SPW11N80C3FKSA1

SPW11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS(on)max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO247-3 • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application (i.e. active clamp forward) Type Package Marking SPW11N80C3 PG-TO247-3 11N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 11 T C=100 °C 7.1 Pulsed drain current2) I D,pulse T C=25 °C 33 Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 470 Avalanche energy, repetitive t AR2),3) E AR I D=11 A, V DD=50 V 0.2 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Mounting torque Rev. 2.91 Unit A mJ 11 A V DS=0…640 V 50 V/ns static ±20 V AC (f >1 Hz) ±30 T C=25 °C 156 W -55 ... 150 °C M2.5 screws page 1 50 Ncm 2011-09-27 SPW11N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Value Unit 11 A T C=25 °C Diode pulse current2) I S,pulse 33 Reverse diode dv /dt 4) dv /dt 4 V/ns Parameter Symbol Conditions Values Unit min. typ. max. - - 0.8 leaded - - 62 1.6 mm (0.063 in.) from case for 10s - - 260 °C 800 - - V - 870 - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA Soldering temperature, T sold wave soldering only allowed at leads K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=11 A Gate threshold voltage V GS(th) V DS=V GS, I D=0.68 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=800 V, V GS=0 V, T j=25 °C - - 20 V DS=800 V, V GS=0 V, T j=150 °C - 100 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=7.1 A, T j=25 °C - 0.39 0.45 Ω V GS=10 V, I D=7.1 A, T j=150 °C - 1.05 - f =1 MHz, open drain - 1.2 - Gate resistance Rev. 2.91 RG page 2 Ω 2011-09-27 SPW11N80C3 Parameter Values Symbol Conditions Unit min. typ. max. - 1600 - - 65 - - 50 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related5) V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related6) C o(tr) - 140 - Turn-on delay time t d(on) - 25 - Rise time tr - 15 - Turn-off delay time t d(off) - 72 - Fall time tf - 10 - Gate to source charge Q gs - 8 - Gate to drain charge Q gd - 30 - Gate charge total Qg - 64 85 Gate plateau voltage V plateau - 5.5 - V - 1 1.2 V - 550 - ns - 10 - µC - 33 - A V DD=400 V, V GS=0/10 V, I D=11 A, R G=7.5 ? , T j=25 °C ns Gate Charge Characteristics V DD=640 V, I D=11 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=I S=11 A, T j=25 °C V R=400 V, I F=I S=11 A, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD=ID, di/dt=200A/µs, VDClink = 400V, Vpeak