SPW24N60C3FKSA1

SPW24N60C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 0.16 Ω ID 24.3 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPW24N60C3 Package PG-TO247 Ordering Code Q67040-S4640 Marking 24N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 24.3 TC = 100 °C 15.4 Pulsed drain current, tp limited by Tjmax I D puls 72.9 Avalanche energy, single pulse EAS 780 mJ I D = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1 I D = 24.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS 24.3 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 240 W Operating and storage temperature T j , T stg -55... +150 °C Reverse diode dv/dt 4) dv/dt Rev. 2.5 Page 1 15 V/ns 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW24N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 , ID = 24.3 , Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 0.52 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=24.3A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=1200µΑ, VGS=VDS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.5 RG µA Tj=25°C, - 0.1 1 Tj=150°C - - 100 VGS=20, VDS =0V - - 100 Ω VGS=10V, ID=15.4A, Tj=25°C - 0.14 0.16 Tj=150°C - 0.34 - f=1MHz, open Drain - 0.66 - Page 2 nA 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW24N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 21.5 - S pF ID=15.4A Input capacitance Ciss V GS=0V, V DS=25V, - 3000 - Output capacitance Coss f=1MHz - 1000 - Reverse transfer capacitance Crss - 60 - - 141 - - 224 - - 13 - Effective output capacitance, 2) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 3) Co(tr) pF time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, ns ID=24.3A, R G=3.3 Rise time tr V DD=380V, V GS=0/10V, - 21 - Turn-off delay time td(off) ID=24.3A, R G=3.3Ω - 140 - Fall time tf - 14 - - 12.7 - - 45.8 - - 104.9 135 - 5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=480, ID=24.3A VDD=480V, ID=24.3A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=24.3A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 4I