SPW35N60C3

SPW35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS(on),max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances PG-TO247 • Improved transconductance Type Package Ordering Code Marking SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 34.6 T C=100 °C 21.9 Unit A Pulsed drain current1) I D,pulse T C=25 °C 103.8 Avalanche energy, single pulse E AS I D=17.3 A, V DD=50 V 1500 Avalanche energy, repetitive t AR1),2) E AR I D=34.6 A, V DD=50 V 1.5 Avalanche current, repetitive t AR1) I AR Drain source voltage slope dv /dt I D=34.6 A, V DS=480 V, T j=125 °C 50 V/ns Gate source voltage V GS static ±20 V V GS AC (f >1 Hz) ±30 Power dissipation P tot T C=25 °C 313 W Operating and storage temperature T j, T stg -55 ... 150 °C Reverse diode dv/dt 6) dv/dt Rev. 2.5 34.6 15 Page 1 mJ A V/ns 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - - 0.4 leaded - - 62 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA Soldering temperature, wavesoldering T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=34.6 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=1.9 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=600 V, V GS=0 V, T j=150 °C - - 100 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=21.9 A, T j=25 °C - 0.081 0.1 Ω V GS=10 V, I D=21.9 A, T j=150 °C - 0.2 - Gate resistance RG f =1 MHz, open drain - 0.6 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=21.9 A - 36 - Rev. 2.5 Page 2 S 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - 4500 - - 1500 - - 100 - - 180 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy C o(er) related3) V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related4) C o(tr) - 324 - Turn-on delay time t d(on) - 10 - Rise time tr - 5 - Turn-off delay time t d(off) - 70 - Fall time tf - 10 - Gate to source charge Q gs - 18 - Gate to drain charge Q gd - 70 - Gate charge total Qg - 150 200 Gate plateau voltage V plateau - 5.3 - V DD=480 V, V GS=10 V, I D=34.6 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=480 V, I D=34.6 A, V GS=0 to 10 V nC V 1) Pulse width limited by maximum temperature T j,max only 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 4) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 6) ISD