SPW52N50C3FKSA1

SPW52N50C3 CoolMOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-247 VDS @ Tjmax 560 V RDS(on) 0.07 Ω ID 52 A • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPW52N50C3 Package PG-TO247 Marking 52N50C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value A TC = 25 °C 52 TC = 100 °C 30 Pulsed drain current, tp limited by Tjmax I D puls Avalanche energy, single pulse EAS Unit 156 1800 mJ I D = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1 I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR 20 A V Gate source voltage VGS ±20 Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 417 W Operating and storage temperature T j , T stg -55... +150 °C Reverse diode dv/dt Rev. 2.6 4) dv/dt Page 1 15 V/ns 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 400 V, ID = 52 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 0.3 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=20A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=2700μΑ, VGS=VDS Zero gate voltage drain current IDSS VDS=500V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.6 RG μA Tj=25°C, - 0.5 25 Tj=150°C - - 250 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=30A, Tj=25°C - 0.06 0.07 Tj=150°C - 0.16 - f=1MHz, open Drain - 0.7 - Page 2 nA 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol V DS≥2*I D*RDS(on)max, g fs Transconductance Conditions Values Unit min. typ. max. - 40 - S pF ID=30A Input capacitance Ciss V GS=0V, V DS=25V, - 6800 - Output capacitance Coss f=1MHz - 2200 - Reverse transfer capacitance Crss - 150 - - 212 - - 469 - Effective output capacitance, 2) Co(er) energy related V GS=0V, pF V DS=0V to 400V Effective output capacitance, 3) Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 20 - Rise time tr ID=52A, RG =1.8Ω - 30 - Turn-off delay time td(off) - 120 - Fall time tf - 10 - - 30 - - 160 - - 290 - - 5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=380V, ID=52A VDD=380V, ID=52A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=380V, ID=52A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 4I