TDA21101G

Preliminary Data Sheet TDA21101 High speed Driver with bootstrapping for dual Power MOSFETs P-DSO-8 Features • • • • • • • • • • • • • Fast rise and fall times for frequencies up to 2 MHz Capable of sinking and sourcing of more than 4 A peak current for lowest switching losses Charges High Side (internally clamped to 10 V) and Low Side MOSFET´s gates up to 12 V for lowest on-losses Adjustable High Side MOSFET gate drive voltage via high impedance PVCC pin for optimizing ON losses, gate drive losses, and switching losses Integrates the bootstrap diode for reducing the part count Prevents from cross-conducting by adaptive gate drive control Protects the driver against over-temperature Supports shut-down mode for very low quiescent current through three-state input Compatible to standard PWM controller ICs Floating High Side MOSFET drive up to 30 V Operates with V PVCC = 5 to 12 V ± 10 % à requires no separate supply voltage 1:1 compatible to HIP6601A and HIP6601B Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s and Notebook CPU supplies Type TDA21101 Package P-DSO-8 Marking 21101G Ordering Code Q67042-S4170-A101 Number Name 1 GATE HS Pinout Top View GATEHS 1 8 PHASE BOOT 2 7 PVCC PWM 3 6 VCC GND 4 5 GATELS 2 BOOT 3 4 5 PWM GND GATE LS 6 7 VCC PVCC 8 PHASE Page 1 Description Gate drive output for the N-Channel High side MOSFET Floating bootstrap pin. To be connected to the external bootstrap capacitor to generate the gate drive voltage for the high side N-Channel MOSFET Input for the PWM controller signal Ground Gate drive output for the N-Channel Low Side MOSFET Supply voltage High impedance input to adjust the High Side gate drive This pin connects to the junction of the High Side and the Low Side MOSFET 2002-03-28 Preliminary Data Sheet TDA21101 General Description The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. It has a small propagation delay from input to output, short rise and fall times and the same pin configuration to be compatible to HIP6601. In addition it provides several protection features as well as a shut down mode for efficiency reasons. The high breakdown voltage makes it suitable for mobile applications. Target application The dual high speed driver is designed to work well in half-bridge type circuits where dual N-Channel MOSFETs are utilized. A circuit designer can fully take advantage of the driver´s capabilities in high-efficiency, high-density synchronous DC/DC converters that operate at high switching frequencies, e.g. in multi-phase converters for CPU supplies on motherboards and VRM´s but also in motor drive and class-D amplifier type applications. Absolute Maximum Ratings At Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Min. Max. Voltage supplied to ‘VCC’ pin Voltage supplied to ‘PVCC’ pin Voltage supplied to ‘PWM’ pin Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’ (clamped by the TDA21101 to 10 V when PVCC > 10 V) Voltage rating at ‘PHASE’ pin, DC Junction temperature Storage temperature ESD Rating; Human Body Model IEC climatic category; DIN EN 60068-1 VVCC VPVCC VPWM VBOOT – VPHASE VPHASE TJ TS -0.3 -0.3 -0.3 -0.3 20 20 6.5 10 30 150 -55 150 4 55/150/56 V -15 °C kV - Thermal Characteristic Parameter Symbol Thermal resistance, junction-soldering point Thermal resistance, junction-ambient Page 2 Values Unit Min. Typ. Max. 90 K/W 125 2002-03-28 Preliminary Data Sheet TDA21101 Electrical Characteristic At Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Supply Characteristic Bias supply current IVCC Quiescent current Power supply current IVCCQ IPVCC f = 250 kHz, VPVCC = V VCC = 12 V 1.8 V ≤ V PWM ≤ 3.0 V 0.1 ≤ f ≤ 2 MHz, 5 V ≤ V PVCC ≤ 12 V VVCC rising threshold VVCC falling threshold Values Unit Min. Typ. Max. 9.0 12 mA 500 mA nA 4.5 -500 Under-voltage lockout 9.0 9.5 10 V Under-voltage lockout 8.15 8.8 9.15 V Input Characteristic Current in ‘PWM’ pin IPWM_L V_PWM = 0.4 V -120 µA Current in ‘PWM’ pin IPWM_H V_PWM = 4.5 V 180 Shut down window VIN_SHUT t_SHUT > 600 ns 1.8 3.0 V Shut down hold-off t_SHUT 320 450 600 ns 1.8 V ≤ V PWM ≤ 3.0 V time PWM pin open * VPWM_O 1.8 2.0 2.2 PWM Low level VPWM_L 1.2 2.5 threshold V PWM High level VPWM_H 2.5 3.9 threshold * The driver IC will shut down and the High side MOSFET and the Low side MOSFET will be turnedoff when the PWM input is open (e.g. PWM input disconnected or the PWM IC in a high-Z state) At Tj = 25 °C, unless otherwise specified Dynamic Characteristic Turn-on propagation td(ON)_HS Delay High Side Turn-off propagation td(OFF)_HS delay High Side Rise time High Side tr_HS Fall time High Side tf_HS Turn-on propagation td(ON)_LS Delay Low Side Turn-off propagation td(OFF)_LS delay Low Side Rise time Low Side tr_LS Fall time Low Side tf_LS Turn-on propagation td(ON)_HS Delay High Side Turn-off propagation td(OFF)_HS delay High Side Rise time High Side tr_HS Fall time High Side tf_HS Turn-on propagation td(ON)_LS Delay Low Side PPVCC = V VCC= 12 V CISS = 3000 pF 58 70 40 50 18 18 40 34 30 60 30 40 19 17 80 32 25 ns 60 PPVCC = V VCC= 12 V CISS = 3000 pF TJ = 125 °C Page 3 18 21 50 ns 2002-03-28 Preliminary Data Sheet Turn-off propagation delay Low Side Rise time Low Side Fall time Low Side TDA21101 td(OFF)_LS 43 tr_LS tf_LS 21 20 Operating Conditions At Tj = 25 °C, unless otherwise specified Parameter Voltage supplied to ‘VCC’ pins Voltage supplied to ‘PVCC’ pins Input signal transition frequency Power dissipation Thermal shut down Junction temperature Symbol Conditions Values Unit Min. Typ. Max. VVCC 10.8 13.2 V VPVCC 5 13.2 V f 0.1 2 MHz 165 125 W °C °C PTOT TOT TJ TA = 25 °C, TJ = 125 °C (Hysteresis = 50 °C) 135 -25 0.8 150° At Tj = 25 °C, unless otherwise specified Parameter Conditions Values Unit Min. Typ. Max. Output Characteristic High Side (HS) and Low Side (LS), ensured by design Output HS; Source * PPVCC = V VCC= 12 V 2.15 V Resistance and I_HS_SRC = 2 A Voltage drop HS; Sink VVCC= 12 V, P PVCC = 5 V 1.2 1.9 Ω resp. HS; Sink PPVCC = V VCC= 12 V 0.95 1.5 LS; Source * PPVCC = V VCC= 12 V 2.15 V I_HS_SRC = 2 A LS; Sink PPVCC = V VCC= 12 V 0.7 1.0 Ω HS; Source * PPVCC = V VCC= 12 V 1.65 V I_HS_SRC = 2 A, TJ = 125 °C Output HS; Sink VVCC= 12 V, P PVCC = 5 V 1.9 Resistance and TJ = 125 °C Ω Voltage drop HS; Sink PPVCC = V VCC= 12 V 1.5 resp. (@ 125 °C) TJ = 125 °C LS; Source * PPVCC = V VCC= 12 V 1.65 V I_HS_SRC = 2 A, TJ = 125 °C LS; Sink PPVCC = V VCC= 12 V 1.1 Ω TJ = 125 °C HS; Source * PPVCC = V VCC= 12 V 4 Peak outputD