TDB6HK180N22RRPB11BPSA1

TDB6HK180N22RRP_B11 EconoPACK™2 module Preliminary datasheet EconoPACK™2 module and NTC / pre-applied Thermal Interface Material Features • Electrical features - VCES = 1700 V - IC nom = 150 A / ICRM = 300 A - High surge current capability • Mechanical features - RoHS compliant - PressFIT contact technology - Pre-applied Thermal Interface Material - High power density - Al2O3 substrate with low thermal resistance Potential applications • Active rectifier • Half-controlled B6-bridge Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Thyristor, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 8 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 9 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 2 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 60 s Material of module baseplate Values Unit 3.4 kV Cu Internal Isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 200 housing Symbol Note or test condition Min. Stray inductance module LsCE Storage temperature Tstg Maximum baseplate operation temperature M Weight G Table 3 Unit Typ. Max. 50 -40 - Mounting according to M5, Screw valid application note 3 nH 125 °C 125 °C 6 Nm 180 g Values Unit 1700 V 100 A 77 A 200 A ±20 V Storage and shipment of modules with TIM => see AN2012-07 IGBT, Brake-Chopper Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continous DC collector current ICDC Tvj max = 150 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet Values TBPmax Mounting torque for modul mounting 2 °C Characteristic values Parameter Note: 140 Tvj = 25 °C 3 TH = 65 °C 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 2 IGBT, Brake-Chopper Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth IC = 100 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.95 2.30 V Tvj = 125 °C 2.35 Tvj = 150 °C 2.45 6.40 V IC = 4 mA, VCE = VGE, Tvj = 25 °C QG 5.20 5.80 1.2 µC 7.5 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 9 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.29 nF Collector-emitter cut-off current ICES VCE = 1700 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 100 A, VCE = 900 V, RGon = 0.91 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data Thermal resistance, junction to heatsink Datasheet tr tdoff tf Eon Eoff ISC RthJH Tvj = 25 °C Tvj = 25 °C 0.187 Tvj = 125 °C 0.214 Tvj = 150 °C 0.219 Tvj = 25 °C 0.050 Tvj = 125 °C 0.050 Tvj = 150 °C 0.050 Tvj = 25 °C 0.430 Tvj = 125 °C 0.580 Tvj = 150 °C 0.610 Tvj = 25 °C 0.260 Tvj = 125 °C 0.500 Tvj = 150 °C 0.590 IC = 100 A, VCE = 900 V, Lσ = 50 nH, RGon = 0.91 Ω, di/dt = 1600 A/µs (Tvj = 150 °C) Tvj = 25 °C 20.3 Tvj = 125 °C 23 Tvj = 150 °C 24.2 IC = 100 A, VCE = 900 V, Lσ = 50 nH, RGoff = 0.91 Ω, dv/dt = 3000 V/µs (Tvj = 150 °C) Tvj = 25 °C 18.8 Tvj = 125 °C 30.7 Tvj = 150 °C 34.5 VGE ≤ 15 V, VCC = 1000 V, VCEmax=VCES-LsCE*di/dt tP ≤ 10 µs, Tvj ≤ 150 °C 450 IC = 100 A, VCE = 900 V, RGon = 0.91 Ω IC = 100 A, VCE = 900 V, RGoff = 0.91 Ω IC = 100 A, VCE = 900 V, RGoff = 0.91 Ω per IGBT, Valid with IFX pre-applied Thermal Interface Material 4 1 mA 100 nA µs µs µs µs mJ mJ A 0.445 K/W 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 3 Diode, Brake-Chopper Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Temperature under switching conditions 3 Tvj op -40 Max. 150 °C Diode, Brake-Chopper Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current I2t - value Table 6 IFRM I2t Values Unit 1700 V 50 A 100 A Tvj = 125 °C 310 A²s Tvj = 150 °C 260 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy VF IRM Qr Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Datasheet Typ. Unit Unit Typ. Max. Tvj = 25 °C 1.80 2.35 Tvj = 125 °C 1.90 Tvj = 150 °C 1.95 IF = 50 A, VR = 900 V, VGE = -15 V, -diF/dt = 1600 A/µs (Tvj = 150 °C) Tvj = 25 °C 52.6 Tvj = 125 °C 60.5 Tvj = 150 °C 63.7 IF = 50 A, VR = 900 V, VGE = -15 V, -diF/dt = 1600 A/µs (Tvj = 150 °C) Tvj = 25 °C 10 Tvj = 125 °C 17 Tvj = 150 °C 19.5 IF = 50 A, VR = 900 V, VGE = -15 V, -diF/dt = 1600 A/µs (Tvj = 150 °C) Tvj = 25 °C 5.9 Tvj = 125 °C 10.2 Tvj = 150 °C 11.9 IF = 50 A per diode, Valid with IFX pre-applied Thermal Interface Material -40 5 V A µC mJ 0.879 K/W 150 °C 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 4 Thyristor, Rectifier 4 Thyristor, Rectifier Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 2200 V Repetitive peak off-state voltage VDRM Tvj = 25 °C 2200 V Maximum RMS current at rectifier output IRMSmax TH = 90 °C 150 A Maximum RMS forward current per chip IFRMSM TH = 90 °C 87 A Surge forward current IFSM tP = 10 ms Tvj = 25 °C 870 A Tvj = 125 °C 800 Tvj = 150 °C 770 Tvj = 25 °C 3780 Tvj = 125 °C 3200 Tvj = 150 °C 2960 I2t - value I2t tP = 10 ms A²s Critical rate of rise of onstate current (di/dt)cr DIN IEC 60 754-6, f = 50 Hz, iGM = 0.5 A, diG/dt = 0.5 A/µs Tvj = 150 °C 150 A/µs Critical rate of rise of offstate voltage (dv/dt)cr VD/VDRM = 0.67 Tvj = 150 °C 1000 V/µs Values Unit Table 8 Characteristic values Parameter Symbol Note or test condition Min. Forward voltage VT IT = 100 A Typ. Tvj = 25 °C 1.3 Tvj = 125 °C 1.3 Tvj = 150 °C 1.35 Max. V Gate trigger current Igt Vd = 6 V Tvj = 25 °C 70 mA Gate trigger voltage Vgt Vd = 6 V Tvj = 25 °C 1.5 V Gate non-trigger current Igd vD/VDRM = 0.67 Tvj = 150 °C 5.0 mA Gate non-trigger voltage Vgd vD/VDRM = 0.67 Tvj = 150 °C 0.2 V Holding current IH Vd = 6 V Tvj = 25 °C 100 mA Latching current IL RGK ≥ 20 Ω, iGM = 0.5 A, tg = 10 µs Tvj = 25 °C 250 mA Gate controlled delay time tgd DIN IEC 747-6, iGM = 0.5 A, diG/dt = 0.5 A/µs Tvj = 25 °C 2.0 µs Datasheet 6 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 5 Diode, Rectifier Table 8 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Circuit commutated turn-off time tq Reverse current Ir Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj, op Note: 5 Table 9 ITM = 144 A, vRM = 100 V, VDM/VDRM = 0.50, dvD/dt = 20 V/µs, -diT/dt = 10 A/µs Tvj = 150 °C Typ. Unit Max. 150 µs Tvj = 25 °C, VR = 2200 V 0.5 Tvj = 150 °C, VR = 1250 V 10 per Thyristor, Valid with IFX pre-applied Thermal Interface Material -40 mA 0.592 K/W 150 °C Thyristors are qualified to only operate for a short time in forward blocking mode according to standard IEC60747-2 for diodes. Diode, Rectifier Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 2200 V Maximum RMS forward current per chip IFRMSM TH = 90 °C 87 A Maximum RMS current at rectifier output IRMSM TH = 90 °C 150 A IFSM tP = 10 ms Tvj = 25 °C 1450 A Tvj = 125 °C 1160 Tvj = 150 °C 1150 Tvj = 25 °C 10500 Tvj = 125 °C 6730 Tvj = 150 °C 6610 Surge forward current I2t - value Datasheet I2t tP = 10 ms 7 A²s 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 5 Diode, Rectifier Table 10 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Reverse current VF Ir Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj, op Datasheet IF = 110 A Tvj = 25 °C 1.10 Tvj = 125 °C 1.00 Tvj = 150 °C 1.00 Tvj = 150 °C, VR = 1760 V Max. V 0.3 per diode, Valid with IFX pre-applied Thermal Interface Material -40 8 Typ. Unit mA 0.548 K/W 150 °C 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 6 Characteristics diagrams 6 Characteristics diagrams output characteristic (typical), IGBT, Brake-Chopper IC = f(VCE) VGE = 15 V transfer characteristic (typical), IGBT, Brake-Chopper IC = f(VGE) VCE = 20 V 200 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 transient thermal impedance , IGBT, Brake-Chopper Zth = f(t) 6 7 8 9 10 11 12 13 output characteristic (typical), IGBT, Brake-Chopper IC = f(VCE) Tvj = 150 °C 1 200 180 160 140 0.1 120 100 80 0.01 60 40 20 0.001 0.001 Datasheet 0 0.01 0.1 0.0 1 9 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 6 Characteristics diagrams transient thermal impedance , Diode, Brake-Chopper Zth = f(t) 1 forward characteristic of (typical), Diode, BrakeChopper IF = f(VF) 100 90 80 70 60 50 0.1 40 30 20 10 0.01 0.001 0 0.01 0.1 1 0.0 10 Transient thermal impedance, Thyristor, Rectifier Zth = f(t) 0.5 1.0 1.5 2.0 2.5 3.0 Forward characteristic (typical), Thyristor, Rectifier IT = f(VF) 1 200 180 160 140 0.1 120 100 80 0.01 60 40 20 0.001 0.001 Datasheet 0 0.01 0.1 1 0.0 10 10 0.2 0.4 0.5 0.7 0.9 1.1 1.3 1.4 1.6 1.8 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 6 Characteristics diagrams Transient thermal impedance, Diode, Rectifier Zth = f(t) Forward characteristic (typical), Diode, Rectifier IF = f(VF) 1 220 198 176 154 0.1 132 110 88 0.01 66 44 22 0.001 0.001 Datasheet 0 0.01 0.1 0.0 1 11 0.1 0.3 0.4 0.5 0.7 0.8 0.9 1.0 1.2 1.3 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 7 Circuit diagram 7 Circuit diagram Figure 2 Datasheet 12 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 8 Package outlines 8 Package outlines Infineon Figure 3 Datasheet 13 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module 9 Module label code 9 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 4 2 Datasheet 14 0.20 2021-07-16 TDB6HK180N22RRP_B11 EconoPACK™2 module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-06-17 Target datasheet 0.20 2021-07-16 Preliminary datasheet Datasheet 15 0.20 2021-07-16 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-07-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABA787-002 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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