TLE493DW2B6A1HTSA1

TLE493D-W2B6 Low Power 3D Hall Sensor with I2C Interface and Wake Up Function 1 Overview Quality Requirement Category: Automotive | Industry PG-TSOP6-6-8 Features • 3D magnetic flux density sensing of ±160 mT. • Programmable flux resolution down to 65 µT (typ.). • X-Y angular measurement mode • Diagnostic measurements to check digital parts, analog parts and Hall probe of the sensor • Power down mode with 7 nA (typ) power consumption • 12-bit data resolution for each measurement direction plus 10-bit temperature sensor • Variable update frequencies and power modes (configurable during operation) • Temperature range Tj = -40°C…125°C, supply voltage range = 2.8 V…3.5 V • Triggering by external µC possible via I2C protocol • Interrupt signal to indicate a valid measurement to the microcontroller Applications The TLE493D-W2B6 is designed for all kinds of sensing applications, including the following: • Gear stick position • Control elements in the top column module and multi function steering wheel • Multi function knobs • Pedal/valve position sensing Benefits • Component reduction due to 3D magnetic measurement principle • Wide application range addressable due to high flexibility • Platform adaptability due to device configurability • Supporting functional safety by means of integrated diagnostics • Very low system power consumption due to Wake Up mode • Disturbance of smaller stray fields are neglectable compared to the high magnetic flux measurement range Data Sheet www.infineon.com 1 Ver. 1.2 2019-04-09 TLE493D-W2B6 Overview Table 1 Ordering Information Product Type Marking1) Ordering Code Package Default address write / read TLE493D-W2B6 A0 EC SP001605334 PG-TSOP6-6-8 6AH / 6BH TLE493D-W2B6 A1 ED SP001605340 PG-TSOP6-6-8 44H / 45H TLE493D-W2B6 A2 EE SP001605344 PG-TSOP6-6-8 F0H / F1H TLE493D-W2B6 A3 EF SP001605348 PG-TSOP6-6-8 88H / 89H 1) Engineering samples are marked with “SA”. Data Sheet 2 Ver. 1.2 2019-04-09 TLE493D-W2B6 Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 2.1 2.1.1 2.1.2 2.1.3 2.2 2.3 2.4 2.5 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power mode control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Wake Up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Definition of Magnetic Field . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sensitive Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Magnetic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Temperature Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Overview of Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Interface and Timing Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4 4.1 4.2 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Package Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Data Sheet 3 4 4 4 5 5 5 6 6 7 Ver. 1.2 2019-04-09 TLE493D-W2B6 Functional Description 2 Functional Description This three dimensional Hall effect sensor can be configured by the microcontroller. The measurement data is provided in digital format to the microcontroller. The microcontroller is the master and the sensor is the slave. It also provides test functions and the capability to wake up a sleeping system. 2.1 General Description of the Block diagram and its functions. Power Mode Control F-OSC LP-OSC VDD GND Bias Vertical Hall plates X-Direction Wake Up Lateral Hall plates Z-Direction SCL; /INT Comparator ADC MUX Digital tracking, demodulation & I²C interface SDA Vertical Hall plates Y-Direction Temperature Figure 1 Block Diagram The IC consists of three main functional units containing the following building blocks: • The power mode control system, containing a low-power oscillator, basic biasing, accurate restart, undervoltage detection and a fast oscillator. • The sensing unit, which contains the HALL biasing, HALL probes with multiplexers and successive tracking ADC, as well as a temperature sensor is implemented. • The I2C interface, containing the register files and I/O pads 2.1.1 Power mode control The power mode control provides the power distribution in the IC, a power-on reset function and a specialized low-power oscillator as the clock source. It also manages the start-up behavior. • On start-up, this unit: – activates the biasing, provides an accurate reset detector and fast oscillator – sensor enters low power mode and can be configured via I2C interface • After re-configuration, a measurement cycle is performed, which consists of the following steps: – activating internal biasing, checking for the restart condition and providing the fast oscillator – HALL biasing – measuring the three HALL probe channels sequentially (including the temperature). This is enabled by default – reentering configured mode Data Sheet 4 Ver. 1.2 2019-04-09 TLE493D-W2B6 Functional Description In any case functions are only executed if the supply voltage is high enough, otherwise the restart circuit will halt the state machine until the required level is reached and restart afterwards. The functions are also restarted if a restart event occurs in between (see parameter ADC restart level). 2.1.2 Sensing Measures the magnetic field in X, Y and Z direction. Each X-, Y- and Z-Hall probe is connected sequentially to a multiplexer, which is then connected to an Analog to Digital Converter (ADC). Optional, the temperature (default = activated) can be determined as well after the three Hall channels. 2.1.3 Wake Up For each of the three magnetic channels (X/Y/Z), the Wake Up function has an upper and lower comparison threshold. Each component of the applied field is compared to the lower and upper threshold. If one of the results is above or below these thresholds, an interrupt pulse /INT is generated. This is called a Wake Up function. The sensor signals a certain field strength change to the microcontroller. As long as all components of the field stay within the envelope, no interrupt signal will be provided. Note however that the /INT can also be inhibited during I2C activities, by activated collision avoidance. An Wake Up interrupt /INT is the logical OR among all Wake Up interrupt envelopes of the three channels. 2.2 Pin Configuration (top view) Figure 2 shows the pinout of the TLE493D-W2B6. Figure 2 TLE493D-W2B6 pinout Table 2 TSOP6 pin description and configuration (see Figure 2) Pin No. Name Description 1 SCL /INT Interface serial clock pin (input) Interrupt pin, signals a finished measurement cycle, open-drain 2 GND Connect to GND 3 GND Ground Pin 4 VDD Supply Pin 5 GND Connect to GND 6 SDA Interface serial data pin (input/output), open-drain Data Sheet 5 Ver. 1.2 2019-04-09 TLE493D-W2B6 Functional Description 2.3 Definition of Magnetic Field A positive field is considered as South-Pole facing the corresponding Hall element. Figure 3 shows the definition of the magnetic directions X, Y, Z of the TLE493D-W2B6. Figure 3 2.4 Definition of Magnetic Field Direction Sensitive Area The magnetic sensitive area for the Hall measurement is shown in Figure 4. Figure 4 Data Sheet Center of Sensitive Area (dimensions in mm) 6 Ver. 1.2 2019-04-09 TLE493D-W2B6 Functional Description 2.5 Application Circuit The use of an interrupt line is optional, but highly recommended to ensure proper and efficient readout of the sensor data. The pull-up resistor values of the I2C bus have to be calculated in such a way as to fulfill the rise- and fall time specification of the interface for the given worst case parasitic (capacitive) load of the actual application setup. Please note: too small resistive R1/2 values have to be prevented to avoid unnecessary power consumption during interface transmissions, especially for low-power applications. VDD Power Supply R1 R2 VDD RSDA SDA TLE493D CBuf C1 VDD µC RSCL SCL GND GND (/INT) GND R1 = 1.2kΩ R2 = 1.2kΩ C1 = 100nF Optional (recommended for wire harness): RSDA, RSCL SDA, SCL capacitance < 200 pF each, including all stray capacitances Figure 5 Application Circuit with external power supply and µC For additional EMC precaution in harsh environments, C1 may be implemented by two 100 nF capacitors in parallel, which should be already given by CBuf near the µC and/or power supply. Data Sheet 7 Ver. 1.2 2019-04-09 TLE493D-W2B6 Specification 3 Specification This sensor is intended to be used in an automotive environment. This chapter describes the environmental conditions required by the device (magnetic, thermal and electrical). 3.1 Absolute Maximum Ratings Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Furthermore, only single error cases are assumed. More than one stress/error case may also damage the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. During absolute maximum rating overload conditions the voltage on VDD pin with respect to ground (GND) must not exceed the values defined by the absolute maximum ratings. Table 3 Absolute Maximum Ratings Parameter Symbol min typ max Unit Junction temperature Tj -40 – 125 °C Voltage on VDD VDD -0.3 – 3.5 V Magnetic field Bmax – – ±1 T Voltage range on any pin to GND Vmax -0.1 – 3.5 V Table 4 Note/Condition open-drain outputs are not current limited. ESD Protection1) Ambient temperature TA = 25°C Parameter Symbol ESD voltage (HBM)2) 3) ESD voltage (CDM) VESD Values Unit Note or Test Condition Min. Typ. Max. – – ±2.0 kV R = 1.5 kΩ, C = 100 pF – – ±0.75 kV for corner pins – – ±0.5 kV all pins 1) Characterization of ESD is carried out on a sample basis, not subject to production test. 2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001. 3) Charged Device Model (CDM), ESD susceptibility according to JEDEC JESD22-C101. Data Sheet 8 Ver. 1.2 2019-04-09 TLE493D-W2B6 Specification 3.2 Operating Range To achieve ultra low power consumption, the chip does not use a conventional, power-consuming restart procedure. The focus of the restart procedure implemented is to ensure a proper supply for the ADC operation only. So it inhibits the ADC until the sensor supply is high enough. Table 5 Operating Range Parameter Symbol min typ max Unit Note/Condition Operating temperature Tj -40 – 125 °C Tj = Ta +3 K in fast mode Supply voltage VDD 2.8 3.3 3.5 V Supply voltage must be above restart level ADC restart level Vres 2.2 2.5 2.8 V min. ADC operating level ADC restart hysteresis Vres-hys – 50 – mV Register stable level Vreg – – 2.5 V Register values are stable above this voltage level The sensor relies on a proper supply ramp defined with tPUP, VOUS and IDD-PUP, see Figure 6. The I2C reset feature of the sensor shall be used by the µC after Power Up. If supply monitoring is used in the system (e.g. brownout detector etc.), it is also recommended to use the I2C reset of the sensor following events detected by this monitor. In any case, an external supply switch (either provided by a System-Basis-Chip solution which includes a supply-enable feature, a Bias-Resistor-Transistor device, a capable µC GPIO pin, etc.) shall allow a powercycle of the sensor as backup for high availability applications to cope with any form of VDD ramps (including potential EMC influences), see Figure 6. At Power Up, SDA and SCL shall be pulled to VDD using R1 and R2 of Figure 5 and not be driven to low by any device or µC on SDA and SCL. VDD VOUS 3.3V ≈ tPUP Figure 6 Data Sheet tAPC t VDD power up and power-cycle for high availability 9 Ver. 1.2 2019-04-09 TLE493D-W2B6 Specification Table 6 VDD power up and power-cycle Parameter Symbol min typ max Unit Note/Condition Power Up ramp time tPUP – – 10 µs Availability power cycle1) tAPC – 150 400 µs Power Up overundershoot VOUS 3 3.3 3.5 V Envelope which must not be exceeded at the end of a Power Up. Power Up current consumption IDD-PUP – 10 mA Current consumption during tPUP 1) Not subject to production test - verified by design. 3.3 Electrical Characteristics This sensor provides different operating modes and a digital communication interface. The corresponding electrical parameters are listed in Table 7. Regarding current consumption more information are available in Chapter 3.6. Table 7 Electrical Setup Values for VDD = 3.3 V ±5 %, Tj = -40°C to +125°C (unless otherwise specified) Parameter Supply current 1) Input voltage low threshold2) 2) Input voltage high threshold 2) Input voltage hysteresis Symbol min typ max Unit Note/Condition IDD_pd – 7 130 nA Tj = 25°C; power down mode IDD_fm 1 3.4 5 mA Fast mode VIL – – 30 %VDD all input pads VIH 70 – – %VDD all input pads VIHYS 5 – – – Output voltage low level @ 3 mA load VOL %VDD all input pads 0.4 V all output pads, static load 1) Currents at pull up resistors (Figure 5) needs to be considered for power supply dimensioning. 2) Based on I2C standard 1995 for VDD related input levels Data Sheet 10 Ver. 1.2 2019-04-09 TLE493D-W2B6 Specification 3.4 Magnetic Characteristics The magnetic parameters are specified for an end of line production scenario and for an application life time scenario. The magnetic measurement values are provided in the two’s complement with 12 bit or 8 bit resolution in the registers with the symbols Bx, By and Bz. Two examples, how to calculate the magnetic flux are shown in Table 11 and Table 12. Table 8 Initial Magnetic Characteristics1) Values for Tj = +25°C, 0 h and VDD = 3.3 V (unless otherwise specified) Parameter Symbol min typ max Unit Note/Condition Bxyz_LIN ±160 ±200 ±230 mT -40°C < Tj < +125°C ±100 ±135 ±150 mT 5.5 7.7 10.5 15.4 21 LSB12/ mT -1.8 ±0.2 +1.8 mT XY-Offset (full range and short range) B0xy -0.75 ±0.2 +0.75 mT X to Y magnetic matching4) MXY -15 ±1 +15 % 2) Magnetic linear range (full range) Magnetic linear range 2)3) (short range) Bxyz_LINSR Sensitivity X, Y, Z (full range) Sx, Sy, Sz Sensitivity X, Y, Z (short range) SxSR, SySR, SzSR 11 Z-Offset (full range and short range) B0Z X/Y to Z magnetic matching 4) Up to min. Bxyz_LIN or Bxyz_LINSR MX/YZ -25 0 +25 % 5) Res12 95 130 182 5) Res12_SR 47.5 65 91 µT/ LSB12 Resolution, 8-bit (full range) Res8 1.52 2.08 2.91 Resolution, 8-bit5) (short range) Res8_SR 0.76 1.04 1.46 mT/ LSB8 Magnetic initial noise (rms) (full range and short range) Bineff – 0.1 0.5 mT rms = 1 sigma Magnetic hysteresis 2) (full range and short range) BHYS – 1 – LSB12 due to quantization effects Resolution, 12-bit (full range) Resolution, 12-bit (short range) 5) 1) Magnetic test on wafer level. It is assumed that initial variations are stored and compensated in the external µC during module test and calibration. 2) Not subject to production test - verified by design/characterization. 3) The short range setting does not have an analogue saturation behavior due to internal offsets and the compensation thereof. 4) See the magnetic matching definition in Equation (3.1) and Equation (3.2). 5) Resolution is calculated as 1/Sensitivity (and multiplied by 16 for 8-bit value). Equation for parameter “X to Y magnetic matching”: (3.1) 100 ∙ 2 ∙ % Equation for parameter “X/Y to Z magnetic matching”: / Data Sheet (3.2) 100 ∙ 2 ∙ 11 2 ∙ 2 ∙ % Ver. 1.2 2019-04-09 TLE493D-W2B6 Specification Table 9 Sensor Drifts1) valid for both full range and short range (unless indicated) Values for VDD = 3.3 V ±5 %, Tj = -40°C to 125°C, static magnetic field within full magnetic linear range (unless otherwise specified) Parameter Symbol Sensitivity drift X, Y, Z typ max Unit Note/Condition SxD, SyD, SzD -15 ±5 +15 % TC0 Offset drift X, Y BO_DXY -0.45 – +0.45 mT @ 0 mT, TC0 Offset drift Z BO_DZ -1.6 – +1.6 mT @ 0 mT, TC0 BO_DZ -0.45 – +0.45 mT @ 0 mT, TC0, Z Hall spintest MXY_D -3.5 ±1 +3.5 % TC0 MX/YZ_D -15 ±10 +15 % TC0 Offset drift Z 2) X to Y magnetic matching drift X/Y to Z magnetic matching drift 2) min 1) Not subject to production test, verified by design/characterization. Drifts are changes from the initial characteristics due to external influences. 2) See the magnetic matching definition in Equation (3.1) and Equation (3.2). Table 10 Temperature compensation, non-linearity and noise1) Values for VDD = 3.3 V ±5 %, Tj = -40°C to 125°C (unless otherwise specified) Parameter Symbol min typ max Unit TC0 – ±0 – ppm/K Bx, By and Bz (default) TC1 – -750 – Bx, By and Bz (option 1) TC2 – -1500 – Bx, By and Bz (option 2) TC3 – +350 – Bx, By and Bz (option 3) DNL – ±2 – Differential Non Linearity (short range) DNLSR – ±4 – Integral Non Linearity (full range) INL – ±2 Integral Non Linearity (short range) INLSR – Magnetic noise (rms) BNeff Z-Magnetic noise (rms) XY-Magnetic noise (rms) Temperature compensation (full range and short range) 2) Differential Non Linearity (full range) Note/Condition LSB12 Bx, By and Bz – LSB12 Bx, By and Bz ±4 – LSB12 Bx, By and Bz – – 1 mT rms = 1 sigma BNeffZ – – 0.5 mT BNeffXY – – 0.25 mT rms = 1 sigma, -40°C < Tj < +85°C 1) Not subject to production test, verified by design/characterization. 2) TCX must be set before magnetic flux trimming and measurements with the same value. Data Sheet 12 Ver. 1.2 2019-04-09 TLE493D-W2B6 Specification Conversion register value to magnetic field value: Table 11 [Dec] Magnetic conversion table for 12Bit MSB Bit10 Bit9 Bit8 Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 LSB -2048 1024 512 256 128 64 32 16 8 4 2 1 1 1 1 0 0 0 0 1 1 1 1 [Bin] e.g. 1 The conversion is realized by the two’s complement. Please use following table for transformation: Example for 12-bit read out: 1111 0000 1111B: -2048 + 1024 + 512 + 256 + 0 + 0 + 0 + 0 + 8 + 4 + 2 +1 = -241 LSB12 Calculation of magnetic flux: -241 LSB12 * 0.13 mT/LSB12 = -31.3 mT Table 12 Magnetic conversion table for 8Bit MSB Bit10 Bit9 Bit8 Bit7 Bit6 Bit5 LSB [Dec] -128 64 32 16 8 4 2 1 [Bin] e.g. 0 1 0 1 1 1 0 1 Example for 8-bit read out: 0101 1101B: 0 + 64 + 0 + 16 + 8 + 4 + 0 + 1 = 93 LSB8 Calculation of magnetic flux: 93 LSB8 * 2.08 mT/LSB8 = 193.4 mT 3.5 Temperature Measurement By default, the temperature measurement is activated. The temperature measurement can be disabled if it is not needed and to increase the speed of repetition of the magnetic values. Table 13 Temperature Measurement Characteristics1) Parameter Symbol min typ max Unit Note/Condition Digital value @ 25°C T25 1000 1180 1360 LSB12 Temperature resolution, 12-bit TRes12 0.21 0.24 0.27 K/LSB12 referring to Tj Temperature resolution, 8-bit TRes8 – 3.84 – K/LSB8 referring to Tj 1) The temperature measurement is not trimmed on the sensor. An external μC can measure the sensor during module production and implement external trimming to gain higher accuracies. Temperature values are based on 12 bit resolution. Please note: only bit 11 ... 2 are listed in the bitmap registers. Table 14 Temperature conversion table for 12Bit The bits MSB to Bit2 are read out from the temperature value registers. Bit1 and LSB are added to get a 12-bit value for calculation. MSB Bit10 Bit9 Bit8 Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 [Dec] -2048 1024 512 256 128 64 32 16 8 4 [Bin] e.g. 0 1 0 1 0 0 1 0 1 1 Example for 12-bit calculation: 0110 1010 11B: 0 + 1024 + 0 + 256 + 0 + 0 + 32 + 0 + 8 + 4 = 1324 LSB12 Calculation to temperature: (1324 LSB12 - 1180 LSB12) * 0.24 K/LSB12 + 25°C ≈ 60°C Data Sheet 13 Ver. 1.2 2019-04-09 TLE493D-W2B6 Specification 3.6 Overview of Modes For a good adaptation on application requirements this sensor is equipped with different modes. An overview is listed in Table 15. Table 15 Overview of modes1) Typ. fUpdate2) Mode Measurements Power Down No measurements – Low Power Mode (full range and short range) Bx, By, Bz, T Fast Mode (full range) Fast Mode (short range) Bx, By, Bz Description Lowest possible supply current IDD. 0.05 Hz - 770 Hz Cyclic measurements and ADC-conversions (8 steps) with different update rates. Bx, By Bx, By, Bz, T 5.7 kHz Bx, By, Bz 7.5 kHz Bx, By 8.4 kHz Bx, By, Bz, T 4.2 kHz Bx, By, Bz 5.5 kHz Bx, By 6.2 kHz Master-Controlled Mode Bx, By, Bz, T (full range and Bx, By, Bz short range) Bx, By Measurements and ADC conversions are running continuously. An I2C clock speed ≥ 800 kHz and use of the interrupt /INT is required. Up to Fast Mode Measurements triggered by the values. microcontroller via I2C. 1) Not subject to production test - verified by design/characterization. 2) This is the frequency at which specified measurements are updated. I2C triggered Master-Controlled Mode typical IDD current consumption estimation formula: Equation IDD full range (3.3) ˍ ∙ 0.18 ∙ Equation IDD short range (3.4) ˍ ∙ 0.24 ∙ The average supply current IDDin the 8 Low Power Modes and I2C triggered mode will decrease by about 25 % if the temperature measurement is disabled and will decrease by about 50% if the temperature and Bz measurement is disabled. Data Sheet 14 Ver. 1.2 2019-04-09 TLE493D-W2B6 Specification 3.7 Interface and Timing Description This chapter refers to how to set the boundary conditions in order to establish a proper interface communication. Table 16 Interface and timing1) Parameter Symbol min typ max Unit Note/Condition End of Conversion /INT pulse tINT 1.8 2.5 3.2 μs low-active (when activated) Time window to read first value (full range) tRD1 30 40 50 μs read after rising /INT edge Time window to read first value (short range) tRD1_SR 42 56 70 μs read after rising /INT edge Time window to read next value (full range) tRDn 32 43 54 μs consecutive reads Time window to read next value (short range) tRDn_SR 44 59 74 μs consecutive reads Internal clock accuracy tclk_E -25 – +25 % Allowed I2C bit clock frequency2) fI2C_clk – 400 1000 kHz Low period of SCL clock tL 0.5 – – μs 1.3 μs for 400-kHz mode High period of SCL clock tH 0.4 – – μs 0.6 μs for 400-kHz mode SDA fall to SCL fall hold time (hold time start condition to clock) tSTA 0.4 – – μs 0.6 μs for 400-kHz mode SCL rise to SDA rise su. time (setup time clock to stop condition) tSTOP 0.4 – – μs 0.6 μs for 400-kHz mode SDA rise to SDA fall hold time (wait time from stop to start cond.) tWAIT 0.4 – – μs 0.6 μs for 400-kHz mode SDA setup before SCL rising tSU 0.1 – – μs SDA hold after SCL falling tHOLD 0 – – μs tFALL – 0.25 0.3 µs tRISE – 0.5 – µs I2C timings 3) Fall time SDA/SCL signal 3) Rise time SDA/SCL signal R = 1.2 kΩ 1) Not subject to production test - verified by design/characterization 2) Dependent on R-C-combination on SDA and SCL. Ensure reduced capacitive load for speeds above 400 kHz. 3) Dependent on used R-C-combination. The fast mode, shown in Figure 7, requires a very strict I2C behavior synchronized with the sensor conversions and high bit rates. In this mode, a fresh measurement cycle is started immediately after the previous cycle was completed. Other modes are available for more relaxed timing and also for a synchronous microcontroller operation of sensor conversions. In these modes, a fresh measurement cycle is only started if it is triggered by an internal or external trigger source. In the default measurement configuration (Bx, By, Bz and T), shown in Figure 7, the measurement cycle ends after the temperature measurement. In 3-channel measurement configuration (Bx, By and Bz), the temperature channel is not converted and updated. Thus, the measurement cycle ends after the Bz measurement. Data Sheet 15 Ver. 1.2 2019-04-09 TLE493D-W2B6 Specification In X/Y angular measurement configuration (Bx and By), the Bz and temperature channel are not converted and updated. Thus, the measurement cycle ends after the By measurement. SCL falling edge @ ACK bit reads X[n-1] SCL falling edge SCL falling edge SCL falling edge @ ACK bit @ ACK bit @ ACK bit reads Y[n-1] reads Z[n-1] reads T[n-1 ] shadowed LSBs from prev. MSBs read *) setup/hold time for i2c readout to register value. time must be either: or: status output starts with odd parity bit of last 6 bytes transmitted 1 tS /H ≥ f i2c_clk (update after read) i2c bus protocol SCL / SDA S i2c_adr transmission direction MÆ S sens_reg X[n-1] MSBs Y[n -1] MSBs Z[n-1]MSBs MÆ S SÆ M SÆ M SÆ M T[n-1]MSBs SÆ M X[n-1]LSBs Y[n-1]LSBs SÆ M Z[n-1] LSBs T[n-1] LSBs SÆ M 1 tS/H ≤ - f i2c_clk update ( before read) STATUS P SÆ M S tS/H *) tS/H *) µC can start readout after /INT (=SCL) is high again first register address is 0, trigger bits are0 addressing options ; R/W bit is 1 i2 c_adr sens_reg X[n-1]MSBs MÆ S MÆ S SÆ M corresponds to 10 bit addressing: two bytes following a S condition (i2c standard 1995, section 13.1) tS /H *) tS/H *) /INT (= SCL pin) tINT 1 / update_rate (fast mode) tRD1 X value register tRDn tRDn X[n-1] tRD1 X[n] Y[n-1] Y value register Y[n] Z[n-1] Z value register Z[n] T value register T[n-1] ADC conversion chan. (fast mode) Figure 7 tRDn Bx By T[n] Bz T Bx I2C readout frame, ADC conversion and related timing tRISE tFALL tH tL tSTOP t WAIT tSTA 70% VDD SCL pin 30% VDD 70% VDD SDA pin 30% VDD t HOLD t SU 1 bit transfer Figure 8 Data Sheet STOP cond. START cond. 2 I C timing specification 16 Ver. 1.2 2019-04-09 TLE493D-W2B6 Package Information 4 Package Information 4.1 Package Parameters Table 17 Package Parameters Parameter Symbol Limit Values Unit Notes Min. Typ. Max. RthJA – – 200 K/W Junction to air for PG-TSOP-6-6-8 Thermal resistance Junction lead RthJL – – 100 K/W Junction to lead for PG-TSOP-6-6-8 Soldering moisture level2) MSL 1 Thermal resistance Junction ambient 1) 260°C 1) According to Jedec JESD51-7 2) Suitable for reflow soldering with soldering profiles according to JEDEC J-STD-020D.1 (March 2008) Figure 9 Image of TLE493D-W2B6 in TSOP6 Figure 10 Footprint PG-TSOP6-6-8 (compatible to PG-TSOP6-6-5, all dimensions in mm) Data Sheet 17 Ver. 1.2 2019-04-09 TLE493D-W2B6 Package Information 4.2 Package Outlines Figure 11 Package Outlines (all dimensions in mm) Data Sheet 18 Ver. 1.2 2019-04-09 TLE493D-W2B6 Package Information Figure 12 Packing (all dimensions in mm) Further information about the package can be found here: http://www.infineon.com/cms/packages/SMD_-_Surface_Mounted_Devices/TSOP/TSOP6.html Data Sheet 19 Ver. 1.2 2019-04-09 TLE493D-W2B6 Revision History 5 Revision History Revision History Page or Item Subjects (major changes since previous revision) Ver. 1.2, 2019-04-09 Chapter 3.2 text “I2C reset” updated. Ver. 1.1, 2019-02-08 Figure 4, Figure 11 and Figure 12 updated. Ver. 1.0, 2018-01-24 Initial version Data Sheet 20 Ver. 1.2 2019-04-09 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-04-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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