TLE49681MXTMA1

Bipolar Hall Switch High Precision Automotive Hall Effect Switch TLE4968-1M SP000923334 TLE4968-1M Data Sheet Revision 1.2, 2019-12-20 Sense & Control TLE4968-1M Table of contents Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 List of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 List of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 1.1 1.2 1.3 1.4 Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Target applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.1 2.2 2.3 2.4 2.5 2.6 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pin configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Functional block description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Default start-up behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 3.1 3.2 3.3 3.4 3.5 Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical and magnetic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electro magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 12 13 14 16 4 4.1 4.2 4.3 4.4 4.5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Packing information PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Footprint PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PG-SOT23-3-15 distance between chip and package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 18 18 19 19 19 5 Graphs of the magnetic parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Graphs of the electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Data Sheet 2 5 5 5 6 6 Revision 1.2, 2019-12-20 TLE4968-1M List of tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Data Sheet Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin description PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Absolute maximum rating parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ESD protection (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Operating conditions parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 General electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Magnetic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Electro magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3 Revision 1.2, 2019-12-20 TLE4968-1M List of figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Figure 27 Figure 28 Figure 29 Figure 30 Figure 31 Figure 32 Figure 33 Data Sheet TLE4968-1M in the PG-SOT23-3-15 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin configuration and center of sensitive area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Functional block diagram TLE4968-1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Timing diagram TLE4968-1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Output signal TLE4968-1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Start-up behavior of the TLE4968-1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Basic application circuit #1: only pull-up resistor is necessary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Enhanced application circuit #2: for extended ESD robustness. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Definition of magnetic field direction PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 EMC test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 PG-SOT23-3-15 package outline (all dimensions in mm). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Packing of the PG-SOT23-3-15 in a tape . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Footprint PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Distance between chip and package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Marking of TLE4968-1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Operating point (BOP) of the TLE4968-1M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Release point (BRP) of the TLE4968-1M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Hysteresis (BHys) of the TLE4968-1M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Power on time tPON of the TLE4968-1M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Signal delay time of the TLE4968-1M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Supply current of the TLE4968-1M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Supply current of the TLE4968-1M over supply voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Output current limit of the TLE4968-1M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Output current limit of the TLE4968-1M over applied pull-up voltage . . . . . . . . . . . . . . . . . . . . . . . 22 Output fall time of the TLE4968-1M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Output fall time of the TLE4968-1M over applied pull-up voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Output rise time of the TLE4968-1M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Output rise time of the TLE4968-1M over applied pull-up voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Output leakage current of the TLE4968-1M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Saturation voltage of the TLE4968-1M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Saturation voltage of the TLE4968-1M over output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Effective noise of the TLE4968-1M thresholds over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Output signal jitter of the TLE4968-1M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4 Revision 1.2, 2019-12-20 TLE4968-1M Product description 1 Product description 1.1 Overview Characteristic Supply Voltage Supply Current Sensitivity Interface Temperature Bipolar Hall Effect Switch 3.0 V ~ 32 V 1.6 mA High BOP: 1 mT BRP: -1 mT Open Drain Output -40°C to 170°C Figure 1 TLE4968-1M in the PG-SOT23-3-15 package 1.2 Features • 3.0 V to 32 V operating supply voltage • Operation from unregulated power supply • Reverse polarity protection (-18 V) • Overvoltage capability up to 42 V without external resistor • Output overcurrent and overtemperature protection • Active error compensation • High stability of magnetic thresholds • Low jitter (typ. 0.35 μs) • High ESD performance • Small SMD package PG-SOT23-3-15 Table 1 Ordering information Product name Product type Ordering code Package TLE4968-1M Bipolar Hall Switch SP000923334 PG-SOT23-3-15 Data Sheet 5 Revision 1.2, 2019-12-20 TLE4968-1M Product description 1.3 Target applications Target applications for the TLE496x Hall Switch family are all applications which require a high precision Hall Switch with an operating temperature range from -40°C to 170°C. Its superior supply voltage range from 3.0 V to 32 V with overvoltage capability (e.g. load-dump) up to 42 V without external resistor makes it ideally suited for automotive and industrial applications. The TLE4968-1M has very low magnetic thresholds and a bipolar switching behavior. It is therefore especially suited for applications which require a high sensitivity device and an output switching close to zero magnetic field values. Possible applications are BLDC rotor position measurement or speed and position measurements in camshaft or transmission applications. 1.4 Product validation Qualified for automotive applications. Product validation according to AEC-Q100. Data Sheet 6 Revision 1.2, 2019-12-20 TLE4968-1M Functional description 2 Functional description 2.1 General The TLE4968-1M is an integrated Hall effect switch designed specifically for highly accurate applications with superior supply voltage capability, operating temperature range and temperature stability of the magnetic thresholds. 2.2 Pin configuration (top view) Center of Sensitive Area 3 0.65± 0.1 1 2 1.45± 0.1 SOT23 Figure 2 Pin configuration and center of sensitive area 2.3 Pin description Table 2 Pin description PG-SOT23-3-15 Pin no. Symbol Function 1 VDD Supply voltage 2 Q Output 3 GND Ground Data Sheet 7 Revision 1.2, 2019-12-20 TLE4968-1M Functional description 2.4 Block diagram VDD Voltage Regulator To All Subcircuits Oscillator and Sequencer Bias and Compensation Circuits Spinning Hall Probe Amplifier Demodulator Chopper Multiplexer Reference Q Control Low Pass Filter Comparator with Hysteresis Overtemperature & overcurrent protection GND Figure 3 Data Sheet Functional block diagram TLE4968-1M 8 Revision 1.2, 2019-12-20 TLE4968-1M Functional description 2.5 Functional block description The chopped Hall IC switch comprises a Hall probe, bias generator, compensation circuits, oscillator and output transistor. The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the temperature behavior and reduce influence of technology variations. The active error compensation (chopping technique) rejects offsets in the signal path and the influence of mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stress in the package. The chopped measurement principle together with the threshold generator and the comparator ensures highly accurate and temperature stable magnetic thresholds. The output transistor has an integrated overcurrent and overtemperature protection. B OP Applied Magnetic Field BR P td td tf tr VQ 90% 10% Figure 4 Timing diagram TLE4968-1M VQ B BRP Figure 5 Data Sheet 0 BOP Output signal TLE4968-1M 9 Revision 1.2, 2019-12-20 TLE4968-1M Functional description 2.6 Default start-up behavior The magnetic thresholds exhibit a hysteresis BHYS = BOP - BRP. In case of a power-on with a magnetic field B within hysteresis (BOP > B > BRP) the output of the sensor is set to the pull up voltage level (VQ) per default. After the first crossing of BOP or BRP of the magnetic field the internal decision logic is set to the corresponding magnetic input value. VDDA is the internal supply voltage which is following the external supply voltage VDD. This means for B > BOP the output is switching, for B < BRP and BOP > B > BRP the output stays at VQ. VDDA tPon 3V The device always applies VQ level at start -up Power on ramp VQ t independent from the applied magnetic field ! Magnetic field above threshold B > BOP t VQ Magnetic field below threshold B < BRP t VQ Magnetic field in hysteresis BOP > B > BRP t Figure 6 Data Sheet Start-up behavior of the TLE4968-1M 10 Revision 1.2, 2019-12-20 TLE4968-1M Specification 3 Specification 3.1 Application circuit The following Figure 7 shows the basic option of an application circuit. Only a pull-up resistor RQ is necessary. An external series resistor for VS is not needed. The resistor RQ has to be in a dimension to match the applied VS to keep IQ limited to the operating range of maximum 25 mA. e.g.: VS = 12 V; IQ = 12 V/1200 Ω = 10 mA Vs VDD TLE496x TLE4963-1M RQ = 1.2kΩ Q GND Figure 7 Basic application circuit #1: only pull-up resistor is necessary Vs CDD = 47nF TLE496x VDD RQ = 1.2kΩ Q TVS diode e.g. ESD24VS2U GND Figure 8 Enhanced application circuit #2: for extended ESD robustness With an additional capacitor CDD and a transient voltage suppression (TVS) diode an extended ESD robustness of 15 kV on system level is achieved (Figure 8). If an increased robustness for e.g. testpulse 1 is required, a serial resistor in the supply needs to be added (see also Chapter 3.5). Data Sheet 11 Revision 1.2, 2019-12-20 TLE4968-1M Specification 3.2 Absolute maximum ratings Table 3 Absolute maximum rating parameters Parameter Symbol 1) Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VDD -18 – 32 42 V – 10h, no external resistor required Output voltage VQ -0.5 – 32 V – Reverse output current IQ -70 – – mA – 1) Junction temperature TJ -40 – 155 165 175 195 °C for 2000h (not additive) for 1000h (not additive) for 168h (not additive) for 3 x 1h (additive) Storage temperature TS -40 – 150 °C – Thermal resistance Junction ambient RthJA – – 300 K/W for PG-SOT23-3-15 (2s2p) Thermal resistance Junction lead RthJL – – 100 K/W for PG-SOT23-3-15 1) This lifetime statement is an anticipation based on an extrapolation of Infineon’s qualification test results. The actual lifetime of a component depends on its form of application and type of use etc. and may deviate from such statement. The lifetime statement shall in no event extend the agreed warranty period. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Calculation of the dissipated power PDIS and junction temperature TJ of the chip (SOT23 example): e.g. for: VDD = 12 V, IS = 2.5 mA, VQSAT = 0.5 V, IQ = 20 mA Power dissipation: PDIS = 12 V x 2.5 mA + 0.5 V x 20 mA = 30 mW + 10 mW = 40 mW Temperature ∆T = RthJA x PDIS = 300 K/W x 40 mW = 12 K For TA = 150°C: TJ = TA + ∆T = 150°C + 12 K = 162°C Data Sheet 12 Revision 1.2, 2019-12-20 TLE4968-1M Specification Table 4 ESD protection1) (TA = 25°C) Parameter Symbol 2) 3) ESD voltage (HBM) ESD voltage (CDM) Unit Note or Test Condition Min. Typ. Max. VESD -7 – 7 kV R = 1.5 kΩ, C = 100 pF VESD -1 – 1 kV – -15 – 15 kV with circuit shown in Figure 8 ESD voltage (system level)4) VESD 1) 2) 3) 4) Values Characterization of ESD is carried out on a sample basis, not subject to production test. Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001. Charge device model (CDM) tests according to JESD22-C101. Gun test (2 kΩ / 330 pF or 330 Ω / 150 pF) according to ISO 10605-2008. 3.3 Operating range The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4968-1M. All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned. The maximum tested magnetic field is 600 mT. Table 5 Operating conditions parameters Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VDD 3.0 – 321) V – Output voltage VQ -0.3 – 32 V – Junction temperature TJ -40 – 170 °C – IQ 0 – 25 mA – fSW 0 – 10 kHz – Output current 2) Magnetic signal input frequency 1) Latch-up test with factor 1.5 is not covered. Please see max ratings also. 2) For operation at the maximum switching frequency the magnetic input signal must be 1.4 times higher than for static fields.This is due to the -3 dB corner frequency of the internal low-pass filter in the signal path. Data Sheet 13 Revision 1.2, 2019-12-20 TLE4968-1M Specification 3.4 Electrical and magnetic characteristics Product characteristics involve the spread of values guaranteed within the specified voltage and ambient temperature range. Typical characteristics are the median of the production and correspond to VDD = 12 V and TA = 25°C. The below listed specification is valid in combination with the application circuit shown in Figure 7 and Figure 8. Table 6 General electrical characteristics Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply current IS 1.1 1.6 2.5 mA – Reverse current ISR – 0.05 1 mA for VDD = -18 V – 0.2 0.5 V IQ = 20 mA – 0.24 0.6 V IQ = 25 mA Output saturation voltage VQSAT Output leakage current IQLEAK – – 10 μA – Output current limitation IQLIMIT 30 56 70 mA internally limited and thermal shutdown Output fall time1) tf 0.17 0.4 1 μs 1.2 kΩ / 50 pF, see Figure 4 1) tr 0.4 0.5 1 μs 1.2 kΩ / 50 pF, see Figure 4 tQJ – 0.35 1 μs for square wave signal with 1 kHz td 12 15 30 μs see Figure 4 Power-on time1)4) tPON – 80 150 μs VDD = 3 V, B ≤ BRP - 0.5 mT or B ≥ BOP + 0.5 mT Chopper frequency1) fOSC – 350 kHz – Output rise time 1)2) Output jitter Delay time 1) 2) 3) 4) 1)3) Not subject to production test, verified by design/characterization. Output jitter is the 1 σ value of the output switching distribution. Systematic delay between magnetic threshold reached and output switching. Time from applying VDD = 3.0 V to the sensor until the output is valid. Data Sheet 14 Revision 1.2, 2019-12-20 TLE4968-1M Specification Table 7 Magnetic characteristics Parameter Symbol T (°C) Values Min. Typ. Max. Unit Note / Test Condition Operating point BOP -40...170 -0.35 1.0 2.25 mT – Release point BRP -40...170 -2.25 -1.0 0.35 mT – Hysteresis BHYS -40...170 1.1 2.0 2.9 mT – Effective noise value of the magnetic switching points1) BNeff 25 – 62 – μT – – – 0 – ppm/K – Temperature compensation of TC magnetic thresholds2) 1) The magnetic noise is normal distributed and can be assumed as nearly independent to frequency without sampling noise or digital noise effects. The typical value represents the rms-value and corresponds therefore to a 1 σ probability of normal distribution. Consequently a 3 σ value corresponds to 99.7% probability of appearance. 2) Not subject to production test, verified by design/characterization. Field direction definition Positive magnetic fields are defined with the south pole of the magnet to the branded side of package. N S Figure 9 Data Sheet Branded Side Definition of magnetic field direction PG-SOT23-3-15 15 Revision 1.2, 2019-12-20 TLE4968-1M Specification 3.5 Electro magnetic compatibility Characterization of electro magnetic compatibility is carried out on a sample basis from one qualification lot. Not all specification parameters have been monitored during EMC exposure. +5V Vs Rs R Q = 1.2kΩ CDD = 10nF TLE496x VDD Q CQ = 10nF GND Figure 10 EMC test circuit Ref: ISO 7637-2 (Version 2004), test circuit Figure 10 (with external resistor, RS = 100 Ω) Table 8 Magnetic compatibility Parameter Symbol Level / Type Status Testpulse 1 Testpulse 2a1) Testpulse 2b Testpulse 3a Testpulse 3b Testpulse 42) Testpulse 5b3) VEMC -100 V 60 V/110 V 10 V -150 V 100 V -7 V / -5.5 V US = 86.5 V / US* = 28.5 V C A/C C A A A A 1) ISO 7637-2 (2004) describes internal resistance = 2 Ω (former 10 Ω). 2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V ±0.2 V. 3) A central load dump protection of 42 V is used. Us* = 42 V - 13.5 V. Data Sheet 16 Revision 1.2, 2019-12-20 TLE4968-1M Specification Ref: ISO 7637-2 (Version 2004), test circuit Figure 10 (without external resistor, RS = 0 Ω) Table 9 Electro magnetic compatibility Parameter Symbol Level / Type Status Testpulse 1 Testpulse 2a1) Testpulse 2b Testpulse 3a Testpulse 3b Testpulse 42) Testpulse 5b3) VEMC -50 V 50 V 10 V -150 V 100 V -7 V / 5.5 V US = 86.5 V / US* = 28.5 V C A C A A A A 1) ISO 7637-2 (2004) describes internal resistance = 2 Ω (former 10 Ω). 2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V ±0.2 V. 3) A central load dump protection of 42 V is used. Us* = 42 V - 13.5 V. Data Sheet 17 Revision 1.2, 2019-12-20 TLE4968-1M Package information 4 Package information The TLE4968-1M is available in the small halogen-free SMD package PG-SOT23-3-15. Package outline PG-SOT23-3-15 +0.1 1) 0.4 -0.05 2 C 0.95 0.08...0.1 5 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10° MAX. B 1 ±0.1 10° MAX. 2.9 ±0.1 0.15 MIN. 4.1 A 0...8° 1.9 0.2 0.25 M B C Figure 11 1) Lead width can be 0.6 max. in dambar area PG-SOT23-3-15 package outline (all dimensions in mm) 4.2 Packing information PG-SOT23-3-15 M A 4 0.2 8 2.65 2.13 0.9 3.15 Pin 1 1.15 SOT23-TP V02 Figure 12 Data Sheet Packing of the PG-SOT23-3-15 in a tape 18 Revision 1.2, 2019-12-20 TLE4968-1M Package information 4.3 Footprint PG-SOT23-3-15 0.8 1.4 min 0.9 1.6 1.3 0.9 1.4 min 0.8 1.2 0.8 1.2 0.8 Reflow Soldering Wave Soldering Footprint PG-SOT23-3-15 4.4 PG-SOT23-3-15 distance between chip and package Figure 14 Distance between chip and package 4.5 Package marking M81 Figure 15 Data Sheet ym Figure 13 Year (y) = 0...9 Month (m) = 1... 9, o - October n - November d - December Marking of TLE4968-1M 19 Revision 1.2, 2019-12-20 TLE4968-1M Graphs of the magnetic parameters 5 Graphs of the magnetic parameters Figure 16 Operating point (BOP) of the TLE4968-1M over temperature Figure 17 Release point (BRP) of the TLE4968-1M over temperature Figure 18 Hysteresis (BHys) of the TLE4968-1M over temperature Data Sheet 20 Revision 1.2, 2019-12-20 TLE4968-1M Graphs of the electrical parameters 6 Graphs of the electrical parameters 80 75 tPON_max [μs] 70 65 3V 60 55 50 50 30 10 10 30 50 70 90 110 130 150 T[°C] Figure 19 Power on time tPON of the TLE4968-1M over temperature 15,5 15 tD [µs] 14,5 14 3V 12V 13,5 13 12,5 -50 -30 -10 10 30 50 70 90 110 130 150 T [°C] Figure 20 Signal delay time of the TLE4968-1M over temperature 2 1,9 1,8 Vs=3V 1,7 IS [mA] 1,6 Vs=12V 1,5 Vs=32V 1,4 1,3 Vs=42V 1,2 1,1 1 -50 -30 -10 10 30 50 70 90 110 130 150 T [°C] Figure 21 Data Sheet Supply current of the TLE4968-1M over temperature 21 Revision 1.2, 2019-12-20 TLE4968-1M Graphs of the electrical parameters 2 1,9 1,8 IS [mA] 1,7 1,6 -40°C 1,5 25°C 1,4 150°C 1,3 1,2 1,1 1 0 5 10 15 20 25 30 35 40 45 VS [V] Figure 22 Supply current of the TLE4968-1M over supply voltage 63,0 62,0 IQLIMIT [mA] 61,0 60,0 5V 59,0 12V 58,0 32V 57,0 56,0 55,0 54,0 50 30 10 10 30 50 70 90 110 130 150 T[°C] Figure 23 Output current limit of the TLE4968-1M over temperature 63,0 62,0 IQLIMIT [mA] 61,0 60,0 40°C 59,0 25°C 58,0 150°C 57,0 56,0 55,0 54,0 0 5 10 15 20 25 30 35 VQ [V] Figure 24 Data Sheet Output current limit of the TLE4968-1M over applied pull-up voltage 22 Revision 1.2, 2019-12-20 TLE4968-1M Graphs of the electrical parameters 700 600 tf [ns] 500 3V 12V 400 32V 300 200 100 -50 -30 -10 10 30 50 70 90 110 130 150 T [°C] Figure 25 Output fall time of the TLE4968-1M over temperature 700 600 tf [ns] 500 -40°C 25°C 400 150°C 300 200 100 0 5 10 15 20 25 30 35 VQ [V] Figure 26 Output fall time of the TLE4968-1M over applied pull-up voltage 700 600 tr [ns] 3V 12V 500 32V 400 300 -50 -30 -10 10 30 50 70 90 110 130 150 T [°C] Figure 27 Data Sheet Output rise time of the TLE4968-1M over temperature 23 Revision 1.2, 2019-12-20 TLE4968-1M Graphs of the electrical parameters 700 600 tf [ns] 500 -40°C 25°C 400 150°C 300 200 100 0 5 10 15 20 25 30 35 VQ [V] Figure 28 Output rise time of the TLE4968-1M over applied pull-up voltage 10 IQLEAK [µA] 1 32V 0,1 0,01 0,001 80 90 100 110 120 130 140 150 160 170 180 T [°C] Figure 29 Output leakage current of the TLE4968-1M over temperature 400 350 300 VQSAT [mV] 10mA 250 15mA 200 20mA 150 25mA 100 50 0 -50 -30 -10 10 30 50 70 90 110 130 150 T [°C] Figure 30 Data Sheet Saturation voltage of the TLE4968-1M over temperature 24 Revision 1.2, 2019-12-20 TLE4968-1M Graphs of the electrical parameters 400 350 VQSAT [mV] 300 250 -40°C 200 25°C 150°C 150 100 50 0 8 10 12 14 16 18 20 22 24 26 IQ [mA] Figure 31 Saturation voltage of the TLE4968-1M over output current 120 110 100 BNNeff [µT(rms)] 90 80 70 12V 60 50 40 30 20 -50 -30 -10 10 30 50 70 90 110 130 150 T [°C] Figure 32 Effective noise of the TLE4968-1M thresholds over temperature 0,8 0,7 tQJ [µs(rms)] 0,6 0,5 0,4 12V 03 0,3 0,2 0,1 0 -50 -30 -10 10 30 50 70 90 110 130 150 T [°C] Figure 33 Data Sheet Output signal jitter of the TLE4968-1M over temperature 25 Revision 1.2, 2019-12-20 TLE4968-1M Revision history 7 Revision history Revision Date Changes Revision 1.2 2019-12-20 Updated text and figure in Chapter 2.6 Updated standards in Table 4 Added maximum tested magnetic field in Chapter 3.3 Editorial changes Revision 1.0 2013-04-07 Initial release Data Sheet 26 Revision 1.2 2019-12-20 Trademarks All referenced product or service names and trademarks are the property of their respective owners. www.infineon.com Edition 2019-12-20 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG. 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