TLE4997A8(D)
Programmable Single/Dual Die Linear Hall Sensor
Data Sheet
Revision 1.1, 2018-01
Sense & Control
Edition 2018-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
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be endangered.
TLE4997A8(D)
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1
1.1
1.2
1.3
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Target Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4
5
5
2
2.1
2.2
2.3
2.4
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Principle of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transfer Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
6
6
7
7
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
5.1
5.2
5.3
Electrical, Thermal and Magnetic Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Magnetic Charactheristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Magnetic Field Direction Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7
Configuration and Calibration Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
8
8.1
8.2
8.3
Error Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltages Outside the Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Open Circuit of Supply Lines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Not Correctable EEPROM Errors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
9.1
9.2
PG-TDSO-8 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Distance Chip to package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Moisture Sensitivity Level (MSL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
10
PG-TDSO-8 Package Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Data Sheet
3
10
10
12
13
18
18
18
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TLE4997A8(D)
Overview
1
Overview
Characteristic
Supply Voltage
Supply Current
Magnetic Range
Interface
Temperature
Programmable
Single/ Dual Die
Linear Hall
Sensor
4.5~5.5 V
7.5 mA
±50mT
±100mT
±200mT
Analog
Ratiometric
Output
-40°C to 125°C
Figure 1-1
1.1
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
SMD package PG-TDSO-8 for the TLE4997A8(D)
Features
Integration of two individual programmable Linear Hall sensor IC’s with ratiometric analog output signal.
20-bit Digital Signal Processing (DSP)
Digital temperature compensation
12-bit overall resolution
Operating automotive temperature range -40°C to 125°C
Low drift of output signal over temperature and lifetime
Programmable parameters stored in EEPROM with single-bit error correction:
– Magnetic range and sensitivity (gain), polarity of the output slope
– Offset
– Bandwidth
– Clamping levels
– Temperature compensation coefficients to accomodate most common magnet materials
– Memory lock
Supply voltage 4.5-5.5 V (4-7 V extended range)
Configurable magnetic range : ±50mT, ±100mT or ±200mT
Reverse-polarity and overvoltage protection for all pins
Output short-circuit protection
On-board diagnostics (wire breakage detection, EEPROM error, overvoltage)
Digital readout of internal temperature and magnetic field values in calibration mode
Programming and operation of multiple sensors with common power supply
Two-point calibration of magnetic transfer function
Note: Product qualification is based on “AEC Q100” grade 1 (Automotive Electronics Council - Stress test
qualification for integrated circuits)
Table 1-1
Product Name
Ordering Information
Marking
Ordering Code
Package
TLE4997A8
A8S
SP001215464
single sensor, PG-TDSO-8
TLE4997A8D
A8D
SP000902760
dual sensor, PG-TDSO-8
Data Sheet
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TLE4997A8(D)
Overview
1.2
•
•
•
Target Applications
Robust replacement of potentiometers: No mechanical abrasion, resistant to humidity, temperature, pollution
and vibration
Linear and angular position sensing in automotive and industrial applications with highest accuracy
requirements
Suited for ASIL applications such as pedal position, throttle position and steering torque sensing
1.3
Pin Configuration
Figure 1-2 shows the location of the Hall elements in the chip pin configuration of the package.
Figure 1-2
Pin Configuration of PG-TDSO-8 package
Table 1-2
TLE4997A8(D) Pin Definitions and Functions
Pin No.
Symbol
TLE4997A8 Function
TLE4997A8D Function
1
n/c
not connected (connection to GND is
recommended)
not connected (connection to GND is
recommended)
2
VDD
Supply voltage / programming interface
Supply voltage / programming interface (top
die)
3
GND
Ground
Ground (top die)
4
OUT
Output / programming interface
Output / programming interface (top die)
5
OUT
not connected
Output / programming interface (bottom die)
6
GND
not connected
Ground (bottom die)
7
VDD
not connected
Supply voltage / programming interface
(bottom die)
8
n/c
not connected
not connected (connection to GND is
recommended)
Data Sheet
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TLE4997A8(D)
General
2
General
All further specifications are regarded to both implemented sensor IC’s, or otherwise noted.
2.1
Block Diagram
Figure 2-1 shows is a simplified block diagram.
VDD
Interface
Supply
Bias
EEPROM
A
HALL
enable
D
D
VDD
DSP
Temp.
Sense
A
OUT
A
D
OBD
GND
ROM
Figure 2-1
2.2
Block Diagram of the TLE4997A8(D) with the ratiometric analog output interface
Functional Description
The linear Hall IC TLE4997A8(D) has been specifically designed for highly accurate angle and position detection.
The sensor provides a ratiometric analog output voltage, which is ideally suited to Analog-to-Digital (A/D)
conversion with the supply voltage as a reference.
The IC is produced in BiCMOS technology with high voltage capability and also provides reverse polarity
protection.
Digital signal processing using a 16-bit DSP architecture together with digital temperature and analog stress
compensation guarantees excellent stability over the whole temperature range and life time.
Data Sheet
6
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TLE4997A8(D)
General
2.3
•
•
•
•
•
•
•
•
•
•
•
Principle of Operation
A magnetic flux is measured by a Hall-effect cell
The output signal from the Hall-effect cell is converted from analog to digital signals
The chopped Hall-effect cell and continuous-time A/D conversion ensure a very low and stable magnetic offset
A programmable low-pass filter to reduce noise
The temperature is measured and A/D converted
Temperature compensation is done digitally using a second-order function
Digital processing of the output value is based on zero field and sensitivity value
The output value range can be clamped by digital limiters
The final output value is D/A converted
The output voltage is proportional to the supply voltage (ratiometric DAC)
An On-Board-Diagnostics (OBD) circuit connects the output to VDD or GND in case of errors
2.4
Transfer Functions
The examples in Figure 2-2 show how different magnetic field ranges can be mapped to the desired output value
ranges.
•
•
Polarity Mode:
– Bipolar: Magnetic fields can be measured in both orientations. The limit points do not necessarily have to
be symmetrical around the zero field point
– Unipolar: Only north- or south-oriented magnetic fields are measured
Inversion: The gain value of either die can be set independently, to be positive or negative.
B (mT)
VOUT (V)
50
5
100
0
0
0
-50
Data Sheet
B (mT)
5 200
0
VOUT
-100
Example 1:
- Bipolar
Figure 2-2
VOUT (V)
B (mT)
VOUT (V)
5
0
VOUT
0
-200
Example 2:
- Unipolar
- Big offset
- Output for 3.3 V
Example 3:
- Bipolar
- Inverted (neg. gain)
Examples of Operation
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TLE4997A8(D)
Maximum Ratings
3
Maximum Ratings
Table 3-1
Absolute Maximum Ratings
Parameter
Junction temperature
Symbol
TJ
Values
Min.
Typ.
Max.
- 40
–
1601)
Voltage on VDD pin with respect to
ground (VSS)
VDD
-20
Supply current @ overvoltage
IDDov
–
Supply current @ reverse voltage
IDDrev
-75
Voltage on output pin with respect to
ground (VSS)
VOUTov
-16
Magnetic field
BMAX
-
ESD protection
VESD
-
2)
4)
–
20
–
52
–
–
3)
3)
Unit
Note / Test Condition
°C
-
V
RTHja ≤ 150 K/W
mA
-
mA
-
V
RTHja ≤ 150 K/W
VOUT may be > VDD
–
16
–
1
T
-
±2
kV
According HBM
ANSI/ESDA/JEDEC
JS-0015)
1) For limited time of 96 h. Depends on application temperature lifetime cycles. Please ask for support by Infineon.
2) max 24 h @ -40°C ≤ Ta < 30°C
max 10 min. @ 30°C ≤ Ta < 80°C
max 30 sec. @ 80°C ≤ Ta < 125°C.
3) max. 24 h @ TJ < 80°C.
4) Max. 1 ms @ TJ < 30°C; -8.5 V for 100 h @ TJ < 80°C.
5) 100 pF and 1.5 kΩ
Attention: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification
is not implied. Furthermore, only single error cases are assumed. More than one stress/error
case may also damage the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. During absolute maximum rating overload conditions the voltage on VDD pins with
respect to ground (VSS) must not exceed the values defined by the absolute maximum ratings.
Lifetime statements are an anticipation based on an extrapolation of Infineon’s qualification
test results. The actual lifetime of a component depends on its form of application and type of
use etc. and may deviate from such statement. The lifetime statement shall in no event extend
the agreed warranty period.
Data Sheet
8
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TLE4997A8(D)
Operating Range
4
Operating Range
The following operating conditions must not be exceeded in order to ensure correct operation of the
TLE4997A8(D). All parameters specified in the following sections refer to these operating conditions, if applicable
or unless otherwise indicated.
Table 4-1
Operating Range
Parameter
Supply voltage
Symbol
VDD
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
4.5
–
5.5
V
4
–
7
V
Extended range
Output current
IOUT
-1
–
1
mA
1)
Load resistance
RL
10
10
–
–
–
–
kΩ
Pull-down to GND
Pull-up to VDD
Load capacitance
CL
0
–
210
nF
Ambient temperature2)
TA
- 40
–
125
°C
max. 1200 h at 125°C3)
1) For VOUT within the range of 5% ... 95% of VDD.
2) RTHja ≤ 150 K/W.
3) Maximum exposure time at other ambient temperatures between -40°C and 125°C shall be calculated based on the values
specified in this table using the Arrhenius model.
Note: Keeping signal levels within the limits specified in this table ensures operation without overload conditions.
Data Sheet
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TLE4997A8(D)
Electrical, Thermal and Magnetic Parameters
5
Electrical, Thermal and Magnetic Parameters
All specification values are valid over temperature and lifetime, unless noted otherwise.
5.1
Electrical Characteristics
Table 5-1
Electrical Characteristics
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note / Test Condition
Output voltage range
VOUT
5
6
–
95
94
% of VDD for TA ≤ 120°C
for TA > 120°C
Supply current
IDD
3
7.5
10
mA
1)
Output current @ OUT
shorted to supply lines
IOUTsh
-30
–
30
mA
for operating supply voltage
range only
Zero field voltage
VZERO
-100
–
100
%
internal offset range
Zero field voltage drift
∆VZERO
-10
–
10
mV
In lifetime2)
-10
–
10
mV
error band over temp.3)
Ratiometry error
ERAT
-0.25
–
0.25
%
of VDD3)4)
Thermal resistance
PG-TDSO-85)
RthJA
–
150
–
K/W
junction to air
6)
Power-on time
Power-on reset level
RthJC
tPon
VDDpon
50
–
2
junction to case
–
1
–
10
–
4
ms
∆VOUT ≤ ±5% of VDD
∆VOUT ≤ ±1% of VDD
V
Output DAC quantization ∆VOUT
1.22
mV
Output DAC resolution
–
12
bit
Output DAC bandwidth
fDAC
–
3.2
–
kHz
Differential non-linearity
DNL
-1
–
1
LSB
of output DAC
@ VDD = 5 V
interpolation filter7)
Output noise (rms)
Vnoise
–
–
3
mV
8)
Signal delay
tSD
–
–
250
μs
@ 100 Hz9)
1)
2)
3)
4)
5)
6)
Also in extended VDD range. For VOUT within the range of 5%... 95% of VDD, IOUT= 0mA.
For Sensitivity S ≤ 25 mV/mT. For higher sensitivities the magnetic offset drift is dominant.
For 4.5 V≤ VDD ≤ 5.5 V and within nominal VOUT range; see “Ratiometry” on Page 11 for details on ERAT.
For the maximum error in the extended voltage range, see “Ratiometry” on Page 11.
values derived from simulation with a 4 layer PCB
Response time to set up output data at power on when a constant field is applied. The first value given has a ±5% error,
the second value has a ±1% error.
7) More information, see Figure 7-2 “DAC Input Filter (Magnitude Plot)” on Page 16.
8) 50 mT range (also valid for 100 mT range), LP filter setting 1320 Hz or less, gain 1.0 (scales linearly with gain)
9) A sinusoidal magnetic field is applied, VOUT shows amplitude of 20% of VDD, LP filter is disabled.
Data Sheet
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TLE4997A8(D)
Electrical, Thermal and Magnetic Parameters
Ratiometry
The linear Hall sensor works like a potentiometer. The output voltage is proportional to the supply voltage. The
division factor depends on the magnetic field strength. This behavior is called “ratiometric”’. The supply voltage
VDD should be used as the reference for the A/D Converter of the micro controller. In this case, variations of VDD
are compensated.The ratiometry error is defined as follows:
⎛V
(V ) V
( 5V ) ⎞
⎟⎟ × 100 %
E RAT = ⎜⎜ OUT DD − OUT
5
V
V
DD
⎝
⎠
(5.1)
The ratiometry error band displays as a “Butterfly Curve”.
%
ERAT
1
0.75
0.5
0.25
0
-0.25
-0.5
-0.75
-1
4
5
6
7
VDD
Figure 5-1
V
Ratiometry Error Band
Note: Take care of possible voltage drops on the VDD and VOUT line degrading the result. Ideally, both values are
acquired and their ratio is calculated to gain the highest accuracy. This method should be used especially
during calibration.
Data Sheet
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TLE4997A8(D)
Electrical, Thermal and Magnetic Parameters
Calculation of the Junction Temperature
The internal power dissipation PTOT of the sensor increases the chip junction temperature above the ambient
temperature.
The power multiplied by the total thermal resistance RthJA (Junction to Ambient) added to TA leads to the final
junction temperature. RthJA is the sum of the addition of the two components, Junction to Case and Case to
Ambient.
RthJA = RthJC + RthCA
TJ = TA + ∆T = RthJA x PTOT = RthJA x ( VDD x IDD + VOUT x IOUT ); IDD, IOUT > 0, if direction is into IC
Example (assuming no load on VOUT and TLE4997A8 type):
•
•
•
VDD = 5 V
IDD = 8 mA
∆T= 150[K/W] x (5 [V] x 0.008 [A] + 0 [VA]) = 6 K
For molded sensors, the calculation with RthJC is more applicable.
5.2
Magnetic Charactheristics
Table 5-2
Magnetic Characteristics
Parameter
Sensitivity
Symbol
1)
S
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
±12.5
–
±300
mV/mT
programmable2)
3
%
3)
Sensitivity error band over SE
temperature
-3
Magnetic field range
MFR
±50
±100
±200
mT
programmable4)
Integral nonlinearity
INL
–
–
±15
mV
= ± 0.3% of VDD5)
Magnetic offset
BOS
–
±100
±400
μT
6)
Magnetic offset drift
∆BOS
–
±1
±5
μT/°C
error band6)
1) Defined as ∆VOUT / ∆B.
2) Programmable in steps of 0.024%.
3) Residual sensitivity error band over temperature when using minimum 2 temperatures. Valid in dry state only. Dry is defined
after following baking process: 60minutes at T=125°C
4) Depending on offset and gain settings, the output may already be saturated at lower fields.
5) Range ±50mT (also valid for ranges ±100 mT and ±200 mT). Gain= 1.0 (scales linearly with gain).
6) For Sensitivity S > 25 mV / mT. For lower sensitivities, the zero field voltage drift is dominant.
Data Sheet
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TLE4997A8(D)
Electrical, Thermal and Magnetic Parameters
5.3
Magnetic Field Direction Definition
TLE4997A8D (dual die):
TLE4997 A8 (single die):
N
Top Die
N
Branded Side
S
Branded Side
S
Bottom Die
Figure 5-2
Definition of magnetic field direction of the TLE4997A8(D)
Without reconfiguration the bottom die measures the inverted field value of the top die. This leads to the
characteristic shown in Figure 5-3.
Output [v]
5
Dual Die Top / Single Die
Dual Die Bottom
2.5
0
-50
Figure 5-3
Data Sheet
-32
0
Magnetic Flux B [mT]
32
50
Example of the dual die output signaling
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TLE4997A8(D)
Application Circuit
6
Application Circuit
Figure 6-1 shows the connection of two Linear Hall sensors to a micro controller.
Voltage Tracker e.g.TLE4250
Ref
ADCref
V DD
47nF
10k
TLE out
4997
GND
47nF
100 nF
ADCin1
10k 100 nF
µC
VDD
47nF
10k
TLE out
4997
GND
47nF
100 nF
ADCin2
10k 100 nF
ADCGND
Figure 6-1
Application Circuit
Note: For calibration and programming, the interface has to be connected directly to the OUT pin.
Data Sheet
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Revision 1.1, 2018-01
TLE4997A8(D)
Configuration and Calibration Parameters
7
Configuration and Calibration Parameters
The TLE4997A8(D) has several configurable parameters which are stored in the EEPROM. These parameters
affect the internal data processing and compensation and the output protocol. This chapter gives an overview of
the parameters. A detailed description of all the parameters and the programming procedure is given in the
TLE4997 User’s Manual.
Table 7-1
TLE4997A8(D) Parameters
Parameter
Setting range
Note
Magnetic range
±50 mT
±100 mT
±200 mT
Magnetic input range of Hall ADC
Gain
-4.0....3.99981)2)
Quantization step: 244.14 ppm
Offset
-400 %VDD... 399 %VDD3)
Quantization step: 1.22mV@VDD = 5V
Clamping low level
0 %VDD ... 99.98% VDD
Quantization step: 1.22mV@VDD = 5V
Clamping high level
0 %VDD ... 99.98% VDD
Quantization step: 1.22mV@VDD = 5V
Bandwidth
78 Hz
244 Hz
421 Hz
615 Hz
826 Hz
1060 Hz
1320 Hz
Off
Low-pass filter cut-off (-3 dB) frequency see
Figure 7-1
1st order temperature
coefficient TC15)
-1000 ppm/°C ... 3000 ppm/°C
Quantization step: 15.26 ppm/°C
2nd order temperature
coefficient TC26)
-6 ppm/°C2 ... 6 ppm/°C2
Quantization step: 0.119 ppm/°C2
4)
1) For gain values between -0.5 and +0.5, the numeric accuracy decreases.
2) Gain value of +1.0 corresponds to typical 40mV/mT sensitivity in 100 mT range. Infineon pre-calibrates the samples to
60mV/mT (100mT range).
3) Infineon pre-calibrates the samples at zero field to 50% of VDD (100mT range)
4) Subject to oscillator variation ±25%
5) Relative range to Infineon TC1 temperature pre-calibration, the maximum adjustable range is limited by the register-size
and depends on specific pre-calibrated TL setting, full adjustable range: -2441 to +5355 ppm/°C
6) Relative range to Infineon TC2 temperature pre-calibration, the maximum adjustable range is limited by the register-size
and depends on specific pre-calibrated TQ setting, full adjustable range: -15 to +15 ppm/°C2.
Data Sheet
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TLE4997A8(D)
Configuration and Calibration Parameters
Figure 7-1 shows the filter charactheristics as a magnitude plot (the highest setting is marked).
0
Magnitude (dB)
-1
-2
-3
-4
-5
-6
101
2
10
10
3
Frequency (Hz)
Figure 7-1
DSP Input Filter (Magnitude Plot)
An interpolation filter is placed between the DSP and the output DAC.
0
Magnitude (dB)
-1
-2
-3
-4
-5
-6
101
102
103
10 4
Frequency (Hz)
Figure 7-2
DAC Input Filter (Magnitude Plot)
Note: As this is a digital filter running with an RC-based oscillator, the cutoff frequency may vary within ±25%.
Data Sheet
16
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TLE4997A8(D)
Configuration and Calibration Parameters
Figure 7-3 shows an example in which the magnetic field range between Bmin and Bmax is mapped to output values
between 0.8 V and 4.2 V. If it is not necessary to signal errors, the maximum output voltage range between 0.3 V
and 4.7 V can be used.
5
Vout (V)
Error range
VCLH
4
3
Operating range
2
1
VCLL
Error range
0
Bmin
Bmax
B (mT)
Figure 7-3
Clamping Example
Note: The clamping high value must be above the low value.
Data Sheet
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TLE4997A8(D)
Error Detection
8
Error Detection
Different error cases can be detected by the On-Board-Diagnostics (OBD) and reported to the micro controller.
The OBD is useful only when the clamping function is enabled. It is important to set the clamping threshold values
inside the error voltage values shown in Table 8-1 and Table 8-2 to ensure that it is possible to distinguish
between correct output voltages and error signals.
8.1
Voltages Outside the Operating Range
The output signals an error condition, if VDD lies:
•
•
Inside the ratings specified in Table 3-1 “Absolute Maximum Ratings” on Page 8
Outside the range specified in Table 4-1 “Operating Range” on Page 9
Table 8-1
Undervoltage and Overvoltage (All values with RL ≥ 10k)
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note / Test Condition
Undervoltage threshold
VDDuv
3
-
4
V
Overvoltage threshold
VDDov
7
-
8.3
V
Output voltage@ undervoltage
VOUTuv
0.95xVDD -
-
V
3V ≤ VDD ≤ VDDuv
Output voltage@ overvoltage
VOUTov
0.97xVDD -
-
V
VDDov < VDD ≤ 16 V
IDDuv
-
10
mA
@ undervoltage
1)
Supply current
-
1) For overvoltage and reverse voltage, see Table 3-1 “Absolute Maximum Ratings” on Page 8.
8.2
Open Circuit of Supply Lines
In the case of interrupted supply lines, the data acquisition device can alert the user. If two sensors are placed in
parallel, the output of the remaining working sensor may be still used for an emergency operation.
Open Circuit (OBD Parameters)1)
Table 8-2
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Output voltage@ open VDD line
VOUT
0
-
0.18
V
TJ≤120°C
Output voltage@ open GND line
VOUT
4.82
-
5
V
TJ≤120°C
1) With VDD = 5 V and RL ≥ 10 kΩ pull-down or RL ≥ 20 kΩ pull-up.
8.3
Not Correctable EEPROM Errors
The parity method is able to correct one single bit in one EEPROM line. One other single bit error in another line
can also be detected. As this situation is not correctable, this status is represented at the output pin by clamping
the output value to VDD.
Table 8-3
EEPROM Error Signalling
Parameter
Symbol
Values
Min.
Output voltage @ EEPROM error
Data Sheet
VOUT
Typ.
0.97xVDD -
18
Unit
Note / Test Condition
Max.
VDD
V
Revision 1.1, 2018-01
TLE4997A8(D)
PG-TDSO-8 Package Outlines
9
PG-TDSO-8 Package Outlines
Figure 9-1
9.1
PG-TDSO-8 (PG-TDSO-Plastic Green Thin Dual Small Outline), Package Dimensions
Distance Chip to package
Figure 9-2 shows the distance of the chip surface to the PG-TDSO-8 surface.
TLE4997A8D (dual die)
Figure 9-2
9.2
TLE4997A8 (single die)
Distance of chip surface to package surface
Moisture Sensitivity Level (MSL)
The PG-TDSO-8 fulfills the MSL level 3 according to IPC/JEDEC J-STD-033B.1.
Data Sheet
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TLE4997A8(D)
PG-TDSO-8 Package Marking
10
PG-TDSO-8 Package Marking
Figure 10-1
Data Sheet
PG-TDSO-8 (PG-TDSO-Plastic Green Thin Dual Small Outline), Package Marking
20
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TLE4997A8(D)
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 1.1, 2018-01
Page 4
Removed AEC Q100 revison version
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™,
EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™,
PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™,
SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2011-02-24
Data Sheet
21
Revision 1.1, 2018-01
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Published by Infineon Technologies AG