TLE4998P8DXUMA1

TLE4998P8(D) High Performance Programmable Single/Dual Linear Hall Sensor Data Sheet Revision 1.1, 2017-01 Sense & Control Edition 2017-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2017 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. TLE4998P8(D) Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1 1.1 1.2 1.3 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Target Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4 5 5 2 2.1 2.2 2.3 2.4 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Principle of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transfer Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 6 7 7 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 5.1 5.2 5.3 5.4 Electrical, Thermal and Magnetic Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Magnetic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical and Magnetic Characteristics in Undervoltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . Magnetic Field Direction Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Configuration and Calibration Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 8.1 8.2 Error Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Voltages Outside the Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 EEPROM Error Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 9 9.1 9.2 9.3 PG-TDSO-8 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Distance Chip to package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Moisture Sensitivity Level (MSL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PG-TDSO-8 Package Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data Sheet 3 10 10 11 12 12 17 17 17 18 Revision 1.1, 2017-01 TLE4998P8(D) Overview 1 Overview Characteristic Supply Voltage Supply Current Magnetic Range Interface Temperature Programmable Single/Dual Die Linear Hall Sensor 4.5~5.5 V 6 mA ±50mT ±100mT ±200mT PWM Open Drain Output -40°C to 125°C Figure 1-1 1.1 • • • • • • • • • • • • • • • • SMD package PG-TDSO-8 for the TLE4998P8(D) Features Integration of two individual programmable Linear Hall sensor IC’s with PWM open-drain output signal 20-bit Digital Signal Processing Digital temperature and stress compensation 12-bit overall resolution Operating automotive temperature range -40°C to 125°C Minimal drift of output signal over temperature and lifetime Programmable parameters stored in EEPROM with single bit error correction: – PWM output frequency – Magnetic range, sensitivity (gain), offset, and polarity of the output slope – Bandwidth – Clamping levels – Customer temperature compensation coefficients for all common magnets Re-programmable until memory lock Supply voltage 4.5 - 5.5 V (4.1 - 16 V extended range) Configurable magnetic range: ±50 mT, ±100 mT, or ±200 mT Reverse-polarity and overvoltage protection for all pins Output short-circuit protection On-board diagnostics (overvoltage, EEPROM error) Digital readout of the magnetic field and internal temperature in calibration mode Programming and operation of multiple sensors with common power supply Two-point calibration of magnetic transfer function without iteration steps Note: Product qualification is based on “AEC Q100 Rev. G” grade 1 (Automotive Electronics Council - Stress test qualification for integrated circuits) Table 1-1 Ordering Information Product Name Marking Ordering Code Package TLE4998P8 P8S SP000902772 single sensor, PG-TDSO-8-1 TLE4998P8D P8D SP000902776 dual sensor, PG-TDSO-8-2 Data Sheet 4 Revision 1.1, 2017-01 TLE4998P8(D) Overview 1.2 • • • Target Applications Robust replacement of potentiometers: No mechanical abrasion, resistant to humidity, temperature, pollution and vibration Linear and angular position sensing in automotive and industrial applications with highest accuracy requirements Suited for safety applications such as pedal position, throttle position and steering torque sensing 1.3 Pin Configuration Figure 1-2 shows the location of the Hall elements in the package and the pin configuration of the TLE4998P8(D). Figure 1-2 Pin Configuration of PG-TDSO-8 Package Table 1-2 TLE4998P8(D) Pin Definitions and Functions Pin No. Symbol TLE4998P8 Function TLE4998P8D Function 1 TST Test pin (connection to GND is recommended) Test pin (top die, connection to GND is recommended) 2 VDD Supply voltage / programming interface Supply voltage / programming interface (top die) 3 GND Ground Ground (top die) 4 OUT Output / programming interface Output / programming interface (top die) 5 OUT Not connected Output / programming interface (bottom die) 6 GND Not connected Ground (bottom die) 7 VDD Not connected Supply voltage / programming interface (bottom die) 8 TST Not connected Test pin (bottom die, connection to GND is recommended) Data Sheet 5 Revision 1.1, 2017-01 TLE4998P8(D) General 2 General All further given specifications are regarded to both implemented sensor IC’s, or otherwise noted. 2.1 Block Diagram Figure 2-1 shows is a simplified block diagram. VDD Bias spinning HALL Supply A EEPROM Interface TST D OUT Temp. Sense Stress Sense DSP A PWM D GND ROM Figure 2-1 2.2 Block Diagram of the TLE4998P8(D) with the PWM interface Functional Description The linear Hall IC TLE4998P8(D) has been designed specifically to meet the requirements of highly accurate angle and position detection. The sensor provides a digital PWM signal, which is well suited for direct decoding by any unit measuring a duty cycle of a rectangular signal (usually a timer/capture unit in a microcontroller). The output stage is an open-drain driver pulling the output pin to low only. Therefore, the high level needs to be obtained by an external pull-up resistor. This output type has the advantage that the receiver may use an even lower supply voltage (e.g. 3.3 V). In this case the pull-up resistor must be connected to the given receiver supply. The IC is produced in BiCMOS technology with high voltage capability and it also has reverse-polarity protection. Digital signal processing using a 16-bit DSP architecture together with digital temperature and stress compensation guarantees excellent stability over the whole temperature range and life time. The PWM output frequency can be selected within the range of 122 Hz up to 1953 Hz. Data Sheet 6 Revision 1.1, 2017-01 TLE4998P8(D) General 2.3 • • • • • • • • • • Principle of Operation A magnetic flux is measured by a Hall-effect cell The output signal from the Hall-effect cell is converted from analog to digital signals The chopped Hall-effect cell and continuous-time A/D conversion ensure a very low and stable magnetic offset A programmable low-pass filter to reduce noise The temperature is measured and A/D converted Temperature compensation is done digitally using a second-order function Digital processing of the output value is based on zero field and sensitivity value The output value range can be clamped by digital limiters The final output value is transferred in a rectangular, periodic signal with varying duty cycle (Pulse Width Modulation) The duty cycle is proportional to the 12-bit output value 2.4 Transfer Functions The examples in Figure 2-2 show how different magnetic field ranges can be mapped to the desired output value ranges. • • Polarity Mode: – Bipolar: Magnetic fields can be measured in both orientations. The limit points do not necessarily have to be symmetrical around the zero field point – Unipolar: Only north- or south-oriented magnetic fields are measured Inversion: Both gain can be set to positive values, negative values or positive/negative values. B (mT) OUT12 / OUT16 50 4095 / 100 65535 0 0 -50 Data Sheet 4095 / 65535 0 0 -100 Example 1: - Bipolar Figure 2-2 OUT12 / OUT16 B (mT) B (mT) OUT12 / OUT16 200 4095 / 65535 0 0 -200 Example 2: - Unipolar - Big offset Example 3: - Bipolar - Inverted (neg. gain) Examples of Operation 7 Revision 1.1, 2017-01 TLE4998P8(D) Maximum Ratings 3 Maximum Ratings All further given specifications are regarded to each of the implemented sensors IC’s, or otherwise noted. Table 3-1 Absolute Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Junction temperature TJ - 40 – 1601) °C – Voltage on VDD pin with respect to ground VDD -18 – 18.35 V 2)3) Supply current @ overvoltage VDD max. IDDov – – 15 mA – Reverse supply current @ VDD min. -1 – 0 mA – V – IDDrev Voltage on output pin with respect to ground VOUT -1 Magnetic field BMAX ESD protection VESD 4) 5) – 18.35 - – 1 T – – – ±2 kV According HBM ANSI/ESDA/JEDEC JS-001 1) For limited time of 96 h. Depends on customer temperature lifetime cycle. Please ask Infineon for support. 2) Higher voltage stress than absolute maximum rating, e.g. 150% in latch-up tests is not applicable. In such cases, Rseries ≥100 Ω for current limitation is required. 3) Max 1h, in operating temperature range. 4) IDD can exceed 10 mA when the voltage on OUT is pulled below -1 V (-5 V at room temperature). 5) VDD = 5 V, open drain permanent low, for max. 10 minutes Attention: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Furthermore, only single error cases are assumed. More than one stress/error case may also damage the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. During absolute maximum rating overload conditions the voltage on VDD pins with respect to ground (VSS) must not exceed the values defined by the absolute maximum ratings. Lifetime statements are an anticipation based on an extrapolation of Infineon’s qualification test results. The actual lifetime of a component depends on its form of application and type of use etc. and may deviate from such statement. The lifetime statement shall in no event extend the agreed warranty period. Data Sheet 8 Revision 1.1, 2017-01 TLE4998P8(D) Operating Range 4 Operating Range The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4998P8(D). All parameters specified in the following sections refer to these operating conditions and each of the implemented sensors IC’s if applicable or unless otherwise indicated. Table 4-1 Operating Range Parameter Symbol Supply voltage VDD Values Min. Typ. Max. 4.5 – 5.5 4.1 Supply undervoltage 3) 1)2) Unit Note / Test Condition V – V Extended range – 16 – 4.1 V Extended range VDDuv VDDpon Vpull-up – – 18.35 V – RL 1 – – kΩ – Iout 0 – 5 mA – Load capacitance CL 1 – 8 nF – Ambient temperature5) TA -40 – 125 °C max. 1200 h at 125°C6) 4) Output pull-up voltage 4) Load resistance 4) Output current 4) 1) For supply voltages > 12 V, a series resistance Rseries ≥100 Ω is recommended 2) The open drain switch off, due to overvoltage on the VDD line, can take place in the range of 16.65 V to 18.35 V, as defined in Chapter 8.1 of the data sheet. 3) VDDpon ... power-on reset level, see Table 5-1 4) Output protocol characteristics depend on these parameters, RL must be according to max. output current 5) RTHja ≤ 150 K/W. 6) Maximum exposure time at other ambient temperatures between -40°C and 125°C shall be calculated based on the values specified in this table using the Arrhenius model. Note: Keeping signal levels within the limits specified in this table ensures operation without overload conditions. Data Sheet 9 Revision 1.1, 2017-01 TLE4998P8(D) Electrical, Thermal and Magnetic Parameters 5 Electrical, Thermal and Magnetic Parameters All specification values are valid over temperature and lifetime, unless noted otherwise. 5.1 Electrical Characteristics Table 5-1 Electrical Characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. IDD 3 6 8 mA – RthJA – 150 – K/W junction to air RthJC – 85 – K/W junction to case Power-on time tPon – 0.7 15 2 20 ms ≤ ±5% target out value ≤ ±1% target out value Power-on reset level3) VDDpon 3.1 3.5 3.9 V Output impedance ZOUT 19 30 44 kΩ Output fall time tfall 2 3.5 5 μs VOUT 4.5 V to 0.5 V4) Output rise time trise – 20 – μs VOUT 0.5 V to 4.5 V4) Output low saturation voltage VOUTsat – 0.3 0.6 V IOUTsink= 5 mA – 0.2 0.4 V IOUTsink= 2.2 mA Output noise (rms) OUTnoise – – 2 LSB12 With LP filter setting, from 80 Hz until 1390 Hz5) Oscillator frequency variation ∆f / f -20 – 20 % Nominal oscillator frequency: 8MHz Supply current 1) Thermal resistance 2) 1) Values derived from a simulation with a 4-layer PCB 2) Response time to set up output data at power on when a constant field is applied. The first value given has a ±5% error, the second value has a ±1% error. 3) Power-on and power-off 4) Depends on External RL and CL, See Figure 5-1 5) Range ±50 mT (also valid for ranges ±100 mT and ±200 mT), Gain 1.0 (scales linearly with gain) V OUT *) tPWM tlow VDD thigh 90% V D D DY = thigh/t PWM 10% V D D V OUTsat tfall Figure 5-1 Data Sheet trise t *) RL to V DD assumed Output Characteristic 10 Revision 1.1, 2017-01 TLE4998P8(D) Electrical, Thermal and Magnetic Parameters Calculation of the Junction Temperature The internal power dissipation PTOT of the sensor increases the chip junction temperature above the ambient temperature. The power multiplied by the total thermal resistance RthJA (Junction to Ambient) added to TA leads to the final junction temperature. RthJA is the sum of the addition of the two components, Junction to Case and Case to Ambient. RthJA = RthJC + RthCA TJ = TA + ∆T = RthJA x PTOT = RthJA x ( VDD x IDD + VOUT x IOUT ); IDD, IOUT > 0, if direction is into IC Example (assuming no load on VOUT and TLE4998P8(D) type): • • • VDD = 5 V IDD = 8 mA ∆T= 150[K/W] x (5 [V] x 0.008 [A] + 0 [VA]) = 6 K per silicon For molded sensors, the calculation with RthJC is more adequate. 5.2 Magnetic Characteristics Table 5-2 Magnetic Characteristics Parameter Symbol 1) Values Unit Note / Test Condition programmable2) Min. Typ. Max. ±0.2 ±1.2 ±5.5 %/mT Sensitivity S Sensitivity drift ∆S -2.0 – +2.0 % Magnetic field range MFR ±50 ±100 ±200 mT programmable3) Integral nonlinearity INL – ±2.0 ±4.1 LSB12 4) Magnetic offset BOS – ±100 ±400 μT Magnetic offset drift ∆BOS – ±1 ±5 μT/°C error band Magnetic hysteresis BHYS – – 20 10 μT in 50mT range in 100mT range 1) 2) 3) 4) Defined as ∆DYPWM / ∆B; (DY = PWM duty cycle) Programmable in steps of 0.024%. Depending on offset and gain settings, the output may already be saturated at lower fields. Range ±50 mT (also valid for ranges ±100 mT and ±200 mT), Gain = 1.0 (scales linearly with gain) Data Sheet 11 Revision 1.1, 2017-01 TLE4998P8(D) Electrical, Thermal and Magnetic Parameters 5.3 Electrical and Magnetic Characteristics in Undervoltage Range Table 5-3 Electrical and Magnetic Characteristics in Supply Undervoltage Range Parameter Symbol Values Unit Min. Typ. Max. Note / Test Condition Sensitivity drift SE(T) – – +2.5/-7.5 % Magnetic offset drift ∆BOS – – ±400 μT Integral nonlinearity INL – – ±8.2 LSB12 1) Output noise (rms) OUTnoise – – 8 LSB12 With LP filter setting, from 80 Hz until 1390 Hz1) 1) Range ±50 mT (also valid for ranges ±100 mT and ±200 mT), Gain = 1.0 (scales linearly with gain) 5.4 Magnetic Field Direction Definition Figure 5-2 shows the definition of the magnetic field direction. By standard the south pole field defines the positive field values of the top die of TLE4998P8(D). TLE4998x8D (dual die): TLE4998 x8 (single die): N Top Die S N Branded Side S Branded Side Bottom Die Figure 5-2 Definition of magnetic field direction of the TLE4998P8(D). Without reconfiguration the bottom die measures the inverted field value of the top die. This leads to a default outpout characteristic as shown in Figure 5-3. Data Sheet 12 Revision 1.1, 2017-01 TLE4998P8(D) Electrical, Thermal and Magnetic Parameters Output [% PWM] 100 Dual Die Top / Single Die Dual Die Bottom 50 0 -50 Figure 5-3 Data Sheet -32 0 Magnetic Flux B [mT] 32 50 Example of the dual die output characteristic (range 50 mT, gain 1.0, typical) 13 Revision 1.1, 2017-01 TLE4998P8(D) Application Circuit 6 Application Circuit Figure 6-1 shows the connection of two Linear Hall sensors to a microcontroller. Sensor Module Voltage Supply Sensor Voltage Supply µC µC VDD VDD 47nF TLE out 4998 ECU Module Vdd 2k2 OUT1 GND 50 CCin1 1nF 4.7nF GND VGND CCin2 2k2 V DD 47nF TLE out 4998 OUT2 50 GND 1nF 4.7nF Figure 6-1 Application Circuit The application circuit shown should be regarded as an example only. Data Sheet 14 Revision 1.1, 2017-01 TLE4998P8(D) Configuration and Calibration Parameters 7 Configuration and Calibration Parameters The TLE4998P8(D) has several configurable parameters which are stored in the EEPROM. These parameters affect the internal data processing and compensation and the output protocol. This chapter gives an overview of the parameters. A detailed description of all the parameters and the programming procedure is given in the TLE4998 User’s Manual. Table 7-1 TLE4998P8(D) Paramters Parameter Setting range Note Magnetic range ±50 mT ±100 mT ±200 mT Magnetic input range of Hall ADC Gain -4.0...4.0 Gain value of +1.0 corresponds to typical 32 LSB12/mT sensitivity in 100 mT range (64 LSB12/mT in 50mT range) Offset -400 %DY... 399 %DY1) Quantization step: 0.024 %DY Clamping low level 0 %DY ... 100% DY Quantization step: 0.78 %DY (see Figure 7-1) Clamping high level 0 %DY ... 100% DY Quantization step: 0.78 %DY Bandwidth 80 Hz 240 Hz 440 Hz 640 Hz 860 Hz 1100 Hz 1390 Hz Off Low-pass filter cut-off (-3 dB) frequency (see Figure 7-2) 1st order temperature coefficient TC1 -1000 ppm/°C ... 2500 ppm/°C 3) 2nd order temperature coefficient TC2 -4 ppm/°C2 ... 4 ppm/°C2 4) 2) PWM output frequency2) 122 Hz ... 244 Hz 279 Hz 325 Hz 391 Hz 488 Hz 651 Hz 977 Hz 1953 Hz fPWM = 1953 Hz / (Predivider + 1) with Predivider configurable from 0 to 15. 1) DY = PWM duty cycle 2) Subject to oscillator variation ±20%. 3) Relative range to Infineon temperature pre-calibration, the maximum adjustable range is limited by the register-size and depends on specific pre-calibrated TL setting, full adjustable range: -2441 to +5355 ppm/°C. 4) Relative range to Infineon temperature pre-calibration, the maximum adjustable range is limited by the register-size and depends on specific pre-calibrated TQ setting, full adjustable range: -15 to +15 ppm/°C2. Data Sheet 15 Revision 1.1, 2017-01 TLE4998P8(D) Configuration and Calibration Parameters DYPWM (%) 100 Error range DYCHPWM 80 60 Operating range 40 20 DYCLPWM Error range 0 Bmin B max B (mT) Figure 7-1 Clamping Example 0 Magnitude (dB) -1 -2 -3 -4 -5 -6 101 2 10 10 3 Frequency (Hz) Figure 7-2 Data Sheet DSP Input Filter (Magnitude Plot) 16 Revision 1.1, 2017-01 TLE4998P8(D) Error Detection 8 Error Detection Different error cases can be detected by the On-Board-Diagnostics (OBD) and reported to the micro controller. The OBD can only be used with the clamping functionality enabled. 8.1 • • Voltages Outside the Operating Range Inside the ratings specified in Table 3-1 “Absolute Maximum Ratings” on Page 8 Outside the range specified in Table 4-1 “Operating Range” on Page 9 The output signals an error condition if VDD crosses the overvoltage threshold level. Table 8-1 Overvoltage Parameter Symbol Overvoltage threshold Output duty cycle @ EEPROM error VDDov CYPWMov Values Unit Min. Typ. Max. 16.65 17.5 18.35 V – – – 1) 100 Note / Test Condition 1) Output stays in “off” state (high ohmic) 8.2 EEPROM Error Correction The parity method is able to correct a single bit in the EEPROM line. One other single bit error in another EEPROM line can also be detected, but not corrected. In case there is an incorrectable EEPROM failure, the open drain stage is disabled and permanently kept in off state (high ohmic/sensor defect). Data Sheet 17 Revision 1.1, 2017-01 TLE4998P8(D) PG-TDSO-8 Package Outlines 9 PG-TDSO-8 Package Outlines Figure 9-1 9.1 PG-TDSO-8 (PG-TDSO-Plastic Green Thin Dual Small Outline), Package Dimensions Distance Chip to package Figure 9-2 shows the distance of the chip surface to the PG-TDSO-8 surface. TLE4998x8D (dual die): Figure 9-2 9.2 TLE4998x8 (single die ): Distance of chip surface to package surface Moisture Sensitivity Level (MSL) The PG-TDSO-8 fulfills the MSL level 3 according to IPC/JEDEC J-STD-033B.1. Data Sheet 18 Revision 1.1, 2017-01 TLE4998P8(D) PG-TDSO-8 Package Outlines 9.3 PG-TDSO-8 Package Marking Figure 9-3 Data Sheet PG-TDSO-8 (PG-TDSO-Plastic Green Thin Dual Small Outline), Package Marking 19 Revision 1.1, 2017-01 TLE4998P8(D) Revision History Page or Item Subjects (major changes since previous revision) Revision 1.1, 2017-01 Page 10 Added Note / Test Condition to parameter Output noise (rms) Page 12 Added Note / Test Condition to parameter Output noise (rms) Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. 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