16-Bit
Architecture
XE162FN, XE162HN
16-Bit Single-Chip
Real Time Signal Controller
XE166 Family / Value Line
Data Sheet
V1.5 2013-02
Microcontrollers
Edition 2013-02
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
16-Bit
Architecture
XE162FN, XE162HN
16-Bit Single-Chip
Real Time Signal Controller
XE166 Family / Value Line
Data Sheet
V1.5 2013-02
Microcontrollers
XE162FN, XE162HN
XE166 Family / Value Line
XE162xN Data Sheet
Revision History: V1.5 2013-02
Previous Versions:
V1.4, 2011-07
V1.3, 2010-04
V1.2, 2009-07
V1.1, 2009-07
V1.0, 2009-03 Preliminary
Page
Subjects (major changes since last revision)
26
Added AB step marking.
76
Errata SWD_X.P002 implemented: VSWD tolerance boundaries for
5.5 V are changed.
78
Clarified “Coding of bit fields LEVxV” descriptions. Matched with Operating
Conditions: marked some coding values “out of valid operation range”.
79
Errata FLASH_X.P001 implemented: Test Condition for Flash parameter
NER corrected
Trademarks
C166™, TriCore™ and DAVE™ are trademarks of Infineon Technologies AG.
We Listen to Your Comments
Is there any information in this document that you feel is wrong, unclear or missing?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
mcdocu.comments@infineon.com
Data Sheet
4
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Table of Contents
Table of Contents
1
1.1
1.2
Summary of Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Device Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Definition of Feature Variants . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2
2.1
2.2
General Device Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Pin Configuration and Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Identification Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
3.10
3.11
3.12
3.13
3.14
3.15
3.16
3.17
3.18
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Memory Subsystem and Organization . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Central Processing Unit (CPU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Memory Protection Unit (MPU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Memory Checker Module (MCHK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interrupt System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
On-Chip Debug Support (OCDS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Capture/Compare Unit (CC2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Capture/Compare Units CCU6x . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose Timer (GPT12E) Unit . . . . . . . . . . . . . . . . . . . . . . . . . . .
Real Time Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A/D Converters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Universal Serial Interface Channel Modules (USIC) . . . . . . . . . . . . . . . . .
MultiCAN Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
System Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Watchdog Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Clock Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parallel Ports . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Instruction Set Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
27
28
32
34
34
35
36
37
40
42
46
48
49
51
52
52
53
54
55
4
4.1
4.1.1
4.2
4.2.1
4.3
4.3.1
4.3.2
4.3.3
4.4
4.5
4.6
4.7
4.7.1
Electrical Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage Range definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter Interpretation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Parameters for Upper Voltage Area . . . . . . . . . . . . . . . . . . . . . . . .
DC Parameters for Lower Voltage Area . . . . . . . . . . . . . . . . . . . . . . . .
Power Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Analog/Digital Converter Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . .
System Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Flash Memory Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Testing Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
58
58
59
61
61
62
64
66
68
72
76
79
81
81
Data Sheet
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V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Table of Contents
4.7.2
4.7.2.1
4.7.2.2
4.7.2.3
4.7.3
4.7.4
4.7.5
4.7.6
5
5.1
5.2
5.3
Data Sheet
Definition of Internal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phase Locked Loop (PLL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Wakeup Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Selecting and Changing the Operating Frequency . . . . . . . . . . . . . .
External Clock Input Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pad Properties . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Synchronous Serial Interface Timing . . . . . . . . . . . . . . . . . . . . . . . . . . .
Debug Interface Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package and Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quality Declarations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
82
83
86
86
87
89
93
97
103
103
105
106
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Summary of Features
16-Bit Single-Chip
Real Time Signal Controller
XE162xN (XE166 Family)
1
Summary of Features
For a quick overview and easy reference, the features of the XE162xN are summarized
here.
•
•
•
•
•
•
High-performance CPU with five-stage pipeline and MPU
– 12.5 ns instruction cycle @ 80 MHz CPU clock (single-cycle execution)
– One-cycle 32-bit addition and subtraction with 40-bit result
– One-cycle multiplication (16 × 16 bit)
– Background division (32 / 16 bit) in 21 cycles
– One-cycle multiply-and-accumulate (MAC) instructions
– Enhanced Boolean bit manipulation facilities
– Zero-cycle jump execution
– Additional instructions to support HLL and operating systems
– Register-based design with multiple variable register banks
– Fast context switching support with two additional local register banks
– 16 Mbytes total linear address space for code and data
– 1,024 Bytes on-chip special function register area (C166 Family compatible)
– Integrated Memory Protection Unit (MPU)
Interrupt system with 16 priority levels providing 96 interrupt nodes
– Selectable external inputs for interrupt generation and wake-up
– Fastest sample-rate 12.5 ns
Eight-channel interrupt-driven single-cycle data transfer with
Peripheral Event Controller (PEC), 24-bit pointers cover total address space
Clock generation from internal or external clock sources,
using on-chip PLL or prescaler
Hardware CRC-Checker with Programmable Polynomial to Supervise On-Chip
Memory Areas
On-chip memory modules
– 8 Kbytes on-chip stand-by RAM (SBRAM)
– 2 Kbytes on-chip dual-port RAM (DPRAM)
– Up to 16 Kbytes on-chip data SRAM (DSRAM)
– Up to 16 Kbytes on-chip program/data SRAM (PSRAM)
– Up to 320 Kbytes on-chip program memory (Flash memory)
– Memory content protection through Error Correction Code (ECC)
Data Sheet
7
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Summary of Features
•
•
•
•
•
•
•
•
•
On-Chip Peripheral Modules
– Two synchronizable A/D Converters with up to 9 channels, 10-bit resolution,
conversion time below 1 μs, optional data preprocessing (data reduction, range
check), broken wire detection
– 16-channel general purpose capture/compare unit (CC2)
– One capture/compare units for flexible PWM signal generation (CCU60)
– Multi-functional general purpose timer unit with 5 timers
– 6 serial interface channels to be used as UART, LIN, high-speed synchronous
channel (SPI/QSPI), IIC bus interface (10-bit addressing, 400 kbit/s), IIS interface
– On-chip MultiCAN interface (Rev. 2.0B active) with 64 message objects
(Full CAN/Basic CAN) on up to 2 CAN nodes and gateway functionality
– On-chip system timer and on-chip real time clock
Single power supply from 3.0 V to 5.5 V
Power reduction and wake-up modes
Programmable watchdog timer and oscillator watchdog
Up to 40 general purpose I/O lines
On-chip bootstrap loaders
Supported by a full range of development tools including C compilers, macroassembler packages, emulators, evaluation boards, HLL debuggers, simulators,
logic analyzer disassemblers, programming boards
On-chip debug support via Device Access Port (DAP) or JTAG interface
64-pin Green LQFP package, 0.5 mm (19.7 mil) pitch
Ordering Information
The ordering code for an Infineon microcontroller provides an exact reference to a
specific product. This ordering code identifies:
•
•
•
the derivative itself, i.e. its function set, the temperature range, and the supply voltage
the temperature range:
– SAF-…: -40°C to 85°C
– SAK-…: -40°C to 125°C
the package and the type of delivery.
For ordering codes for the XE162xN please contact your sales representative or local
distributor.
Data Sheet
8
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Summary of Features
1.1
Device Types
The following XE162xN device types are available and can be ordered through
Infineon’s direct and/or distribution channels. The devices are available for the SAF
temperature range. SAK types are available upon request only.
Table 1
Derivative
Synopsis of XE162xN Device Types
Flash
Memory1)
PSRAM
Capt./Comp. ADC3) Interfaces3)
2)
DSRAM
Modules
Chan.
XE162FN-16F80L 128 Kbytes 8 Kbytes
8 Kbytes
CC2
CCU60
7+2
2 CAN Node,
6 Serial Chan.
XE162FN-24F80L 192 Kbytes 8 Kbytes CC2
16 Kbytes CCU60
7+2
2 CAN Node,
6 Serial Chan.
XE162FN-40F80L 320 Kbytes 16 Kbytes CC2
16 Kbytes CCU60
7+2
2 CAN Node,
6 Serial Chan.
XE162HN-16F80L 128 Kbytes 8 Kbytes
8 Kbytes
CC2
CCU60
7+2
no CAN Nodes,
6 Serial Chan.
XE162HN-24F80L 192 Kbytes 8 Kbytes CC2
16 Kbytes CCU60
7+2
no CAN Nodes,
6 Serial Chan.
XE162HN-40F80L 320 Kbytes 16 Kbytes CC2
16 Kbytes CCU60
7+2
no CAN Nodes,
6 Serial Chan.
1) Specific information about the on-chip Flash memory in Table 2.
2) All derivatives additionally provide 8 Kbytes SBRAM and 2 Kbytes DPRAM.
3) Specific information about the available channels in Table 4.
Analog input channels are listed for each Analog/Digital Converter module separately (ADC0 + ADC1).
Data Sheet
9
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Summary of Features
1.2
Definition of Feature Variants
The XE162xN types are offered with several Flash memory sizes. Table 2 and Table 3
describe the location of the available Flash memory.
Table 2
Continuous Flash Memory Ranges
Total Flash Size
1st Range1)
2nd Range
3rd Range
320 Kbytes
C0’0000H …
C0’EFFFH
C1’0000H …
C4’FFFFH
n.a.
192 Kbytes
C0’0000H …
C0’EFFFH
C1’0000H …
C1’FFFFH
C4’0000H …
C4’FFFFH
128 Kbytes
C0’0000H …
C0’EFFFH
C4’0000H …
C4’FFFFH
n.a.
1) The uppermost 4-Kbyte sector of the first Flash segment is reserved for internal use (C0’F000H to C0’FFFFH).
Table 3
Flash Memory Module Allocation (in Kbytes)
Total Flash Size
Flash 01)
Flash 1
320
256
64
192
128
64
128
64
64
1) The uppermost 4-Kbyte sector of the first Flash segment is reserved for internal use (C0’F000H to C0’FFFFH).
The XE162xN types are offered with different interface options. Table 4 lists the
available channels for each option.
Table 4
Interface Channel Association
Total Number
Available Channels / Message Objects
7 ADC0 channels
CH0, CH2, Ch4, CH8, CH10, CH13, CH15
2 ADC1 channels
CH0, CH4
2 CAN nodes
CAN0, CAN1
64 message objects
6 serial channels
U0C0, U0C1, U1C0, U1C1, U2C0, U2C1
The XE162xN types are offered with several SRAM memory sizes. Figure 1 shows the
allocation rules for PSRAM and DSRAM. Note that the rules differ:
•
•
PSRAM allocation starts from the lower address
DSRAM allocation starts from the higher address
Data Sheet
10
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Summary of Features
For example 8 Kbytes of PSRAM will be allocated at E0’0000h-E0’1FFFh and 8 Kbytes
of DSRAM will be at 00’C000h-00’DFFFh.
E7'FFFFh
(EF'FFFFh)
00'DFFFh
Reserved for
PSRAM
Available
DSRAM
Available
PSRAM
Reserved for
DSRAM
E0'0000h
(E8'0000h)
00'8000h
MC_XC_SRAM_ALLOCATION
Figure 1
Data Sheet
SRAM Allocation
11
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
2
General Device Information
The XE162xN series (16-Bit Single-Chip
Real Time Signal Controller) is a part of the Infineon XE166 Family of full-feature singlechip CMOS microcontrollers. These devices extend the functionality and performance of
the C166 Family in terms of instructions (MAC unit), peripherals, and speed. They
combine high CPU performance (up to 80 million instructions per second) with extended
peripheral functionality and enhanced IO capabilities. Optimized peripherals can be
adapted flexibly to meet the application requirements. These derivatives utilize clock
generation via PLL and internal or external clock sources. On-chip memory modules
include program Flash, program RAM, and data RAM.
VAREFVAGND VDDIM VDDI1 VDDP VSS
(1)
(1)
(1)
(3)
(9)
(4)
XTAL1
XTAL2
ESR0
Port 2
11 bit
Port 10
16 bit
Port 6
2 bit
Port 15
2 bit
Port 7
1 bit
Port 5
7 bit
PORST
TRST DAP/JTAG Debug
2 / 4 bit
2 bit
via Port Pins
TESTM
MC_XY _LOGSYMB 64
Figure 2
Data Sheet
XE162xN Logic Symbol
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V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
2.1
Pin Configuration and Definition
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
VDDPB
ESR0
PORST
XTAL1
XTAL2
P10.15
P10.14
VDDI1
P10.13
P10.12
P10.11
P10.10
P10.9
P10.8
VDDPB
VS S
The pins of the XE162xN are described in detail in Table 5, which includes all alternate
functions. For further explanations please refer to the footnotes at the end of the table.
The following figure summarizes all pins, showing their locations on the four sides of the
package.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
LQFP64
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
VDDPB
P10.7
P10.6
P10.5
P10.4
P10.3
P2.10
VDDI1
P10.2
P10.1
P10.0
P2.9
P2.8
P2.7
VDDPB
VSS
VSS
VDDPB
P5.4
P5.8
P5.10
P5.13
P5.15
VDDI 1
P2.0
P2.1
P2.2
P2.3
P2.4
P2.5
P2.6
V DDPB
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
VSS
VDDPB
TESTM
TRST
P7.0
V DDIM
P6.0
P6.1
VDDPA
P15.0
P15.4
VAREF
VAGND
P5.0
P5.2
VDDPB
MC_XY_PIN64
Figure 3
Data Sheet
XE162xN Pin Configuration (top view)
13
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Key to Pin Definitions
•
•
Ctrl.: The output signal for a port pin is selected by bit field PC in the associated
register Px_IOCRy. Output O0 is selected by setting the respective bit field PC to
1x00B, output O1 is selected by 1x01B, etc.
Output signal OH is controlled by hardware.
Type: Indicates the pad type and its power supply domain (A, B, M, 1).
– St: Standard pad
– Sp: Special pad e.g. XTALx
– DP: Double pad - can be used as standard or high speed pad
– In: Input only pad
– PS: Power supply pad
Table 5
Pin Definitions and Functions
Pin
Symbol
Ctrl.
Type Function
3
TESTM
I
In/B
Testmode Enable
Enables factory test modes, must be held HIGH for
normal operation (connect to VDDPB).
An internal pull-up device will hold this pin high
when nothing is driving it.
4
TRST
I
In/B
Test-System Reset Input
For normal system operation, pin TRST should be
held low. A high level at this pin at the rising edge
of PORST activates the XE162xN’s debug system.
In this case, pin TRST must be driven low once to
reset the debug system.
An internal pull-down device will hold this pin low
when nothing is driving it.
5
P7.0
O0 / I St/B
Bit 0 of Port 7, General Purpose Input/Output
T3OUT
O1
St/B
GPT12E Timer T3 Toggle Latch Output
T6OUT
O2
St/B
GPT12E Timer T6 Toggle Latch Output
TDO_A
OH /
IH
St/B
JTAG Test Data Output / DAP1 Input/Output
If DAP pos. 0 or 2 is selected during start-up, an
internal pull-down device will hold this pin low
when nothing is driving it.
ESR2_1
I
St/B
ESR2 Trigger Input 1
Data Sheet
14
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Table 5
Pin Definitions and Functions (cont’d)
Pin
Symbol
Ctrl.
7
P6.0
O0 / I DA/A Bit 0 of Port 6, General Purpose Input/Output
8
Type Function
EMUX0
O1
DA/A External Analog MUX Control Output 0 (ADC0)
BRKOUT
O3
DA/A OCDS Break Signal Output
ADCx_REQG I
TyG
DA/A External Request Gate Input for ADC0/1
U1C1_DX0E
I
DA/A USIC1 Channel 1 Shift Data Input
P6.1
O0 / I DA/A Bit 1 of Port 6, General Purpose Input/Output
EMUX1
O1
DA/A External Analog MUX Control Output 1 (ADC0)
T3OUT
O2
DA/A GPT12E Timer T3 Toggle Latch Output
U1C1_DOUT O3
DA/A USIC1 Channel 1 Shift Data Output
ADCx_REQT I
RyE
DA/A External Request Trigger Input for ADC0/1
ESR1_6
I
DA/A ESR1 Trigger Input 6
P15.0
I
In/A
Bit 0 of Port 15, General Purpose Input
ADC1_CH0
I
In/A
Analog Input Channel 0 for ADC1
P15.4
I
In/A
Bit 4 of Port 15, General Purpose Input
ADC1_CH4
I
In/A
Analog Input Channel 4 for ADC1
T6INA
I
In/A
GPT12E Timer T6 Count/Gate Input
VAREF
VAGND
-
PS/A Reference Voltage for A/D Converters ADC0/1
13
-
PS/A Reference Ground for A/D Converters ADC0/1
14
P5.0
I
In/A
Bit 0 of Port 5, General Purpose Input
ADC0_CH0
I
In/A
Analog Input Channel 0 for ADC0
P5.2
I
In/A
Bit 2 of Port 5, General Purpose Input
ADC0_CH2
I
In/A
Analog Input Channel 2 for ADC0
TDI_A
I
In/A
JTAG Test Data Input
P5.4
I
In/A
Bit 4 of Port 5, General Purpose Input
10
11
12
15
19
ADC0_CH4
I
In/A
Analog Input Channel 4 for ADC0
T3EUDA
I
In/A
GPT12E Timer T3 External Up/Down Control
Input
TMS_A
I
In/A
JTAG Test Mode Selection Input
Data Sheet
15
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Table 5
Pin Definitions and Functions (cont’d)
Pin
Symbol
Ctrl.
Type Function
20
P5.8
I
In/A
Bit 8 of Port 5, General Purpose Input
ADC0_CH8
I
In/A
Analog Input Channel 8 for ADC0
ADC1_CH8
I
In/A
Analog Input Channel 8 for ADC1
CCU6x_T12H I
RC
In/A
External Run Control Input for T12 of CCU60/1
CCU6x_T13H I
RC
In/A
External Run Control Input for T13 of CCU60/1
21
22
23
25
26
27
U2C0_DX0F
I
In/A
USIC2 Channel 0 Shift Data Input
P5.10
I
In/A
Bit 10 of Port 5, General Purpose Input
ADC0_CH10
I
In/A
Analog Input Channel 10 for ADC0
ADC1_CH10
I
In/A
Analog Input Channel 10 for ADC1
BRKIN_A
I
In/A
OCDS Break Signal Input
U2C1_DX0F
I
In/A
USIC2 Channel 1 Shift Data Input
P5.13
I
In/A
Bit 13 of Port 5, General Purpose Input
ADC0_CH13
I
In/A
Analog Input Channel 13 for ADC0
P5.15
I
In/A
Bit 15 of Port 5, General Purpose Input
ADC0_CH15
I
In/A
Analog Input Channel 15 for ADC0
P2.0
O0 / I St/B
Bit 0 of Port 2, General Purpose Input/Output
RxDC0C
I
St/B
CAN Node 0 Receive Data Input
T5INB
I
St/B
GPT12E Timer T5 Count/Gate Input
P2.1
O0 / I St/B
Bit 1 of Port 2, General Purpose Input/Output
TxDC0
O1
St/B
CAN Node 0 Transmit Data Output
T5EUDB
I
St/B
GPT12E Timer T5 External Up/Down Control
Input
ESR1_5
I
St/B
ESR1 Trigger Input 5
P2.2
O0 / I St/B
Bit 2 of Port 2, General Purpose Input/Output
TxDC1
O1
St/B
CAN Node 1 Transmit Data Output
ESR2_5
I
St/B
ESR2 Trigger Input 5
Data Sheet
16
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Table 5
Pin Definitions and Functions (cont’d)
Pin
Symbol
Ctrl.
28
P2.3
O0 / I St/B
U0C0_DOUT O1
29
30
31
Type Function
St/B
Bit 3 of Port 2, General Purpose Input/Output
USIC0 Channel 0 Shift Data Output
CC2_CC16
O3 / I St/B
CAPCOM2 CC16IO Capture Inp./ Compare Out.
ESR2_0
I
St/B
ESR2 Trigger Input 0
U0C0_DX0E
I
St/B
USIC0 Channel 0 Shift Data Input
U0C1_DX0D
I
St/B
USIC0 Channel 1 Shift Data Input
RxDC0A
I
St/B
CAN Node 0 Receive Data Input
P2.4
O0 / I St/B
Bit 4 of Port 2, General Purpose Input/Output
U0C1_DOUT O1
St/B
USIC0 Channel 1 Shift Data Output
TxDC0
O2
St/B
CAN Node 0 Transmit Data Output
CC2_CC17
O3 / I St/B
CAPCOM2 CC17IO Capture Inp./ Compare Out.
ESR1_0
I
St/B
ESR1 Trigger Input 0
U0C0_DX0F
I
St/B
USIC0 Channel 0 Shift Data Input
RxDC1A
I
St/B
CAN Node 1 Receive Data Input
P2.5
O0 / I St/B
Bit 5 of Port 2, General Purpose Input/Output
U0C0_SCLK
OUT
O1
St/B
USIC0 Channel 0 Shift Clock Output
TxDC0
O2
St/B
CAN Node 0 Transmit Data Output
CC2_CC18
O3 / I St/B
CAPCOM2 CC18IO Capture Inp./ Compare Out.
U0C0_DX1D
I
St/B
USIC0 Channel 0 Shift Clock Input
ESR1_10
I
St/B
ESR1 Trigger Input 10
P2.6
O0 / I St/B
Bit 6 of Port 2, General Purpose Input/Output
U0C0_SELO
0
O1
St/B
USIC0 Channel 0 Select/Control 0 Output
U0C1_SELO
1
O2
St/B
USIC0 Channel 1 Select/Control 1 Output
CC2_CC19
O3 / I St/B
CAPCOM2 CC19IO Capture Inp./ Compare Out.
U0C0_DX2D
I
St/B
USIC0 Channel 0 Shift Control Input
RxDC0D
I
St/B
CAN Node 0 Receive Data Input
ESR2_6
I
St/B
ESR2 Trigger Input 6
Data Sheet
17
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Table 5
Pin Definitions and Functions (cont’d)
Pin
Symbol
Ctrl.
35
P2.7
O0 / I St/B
Bit 7 of Port 2, General Purpose Input/Output
U0C1_SELO
0
O1
St/B
USIC0 Channel 1 Select/Control 0 Output
U0C0_SELO
1
O2
St/B
USIC0 Channel 0 Select/Control 1 Output
CC2_CC20
O3 / I St/B
CAPCOM2 CC20IO Capture Inp./ Compare Out.
U0C1_DX2C
I
St/B
USIC0 Channel 1 Shift Control Input
36
37
Type Function
RxDC1C
I
St/B
CAN Node 1 Receive Data Input
ESR2_7
I
St/B
ESR2 Trigger Input 7
P2.8
O0 / I DP/B Bit 8 of Port 2, General Purpose Input/Output
U0C1_SCLK
OUT
O1
DP/B USIC0 Channel 1 Shift Clock Output
EXTCLK
O2
DP/B Programmable Clock Signal Output
CC2_CC21
O3 / I DP/B CAPCOM2 CC21IO Capture Inp./ Compare Out.
U0C1_DX1D
I
P2.9
O0 / I St/B
DP/B USIC0 Channel 1 Shift Clock Input
Bit 9 of Port 2, General Purpose Input/Output
U0C1_DOUT O1
St/B
USIC0 Channel 1 Shift Data Output
TxDC1
O2
St/B
CAN Node 1 Transmit Data Output
CC2_CC22
O3 / I St/B
CAPCOM2 CC22IO Capture Inp./ Compare Out.
CLKIN1
I
St/B
Clock Signal Input 1
TCK_A
IH
St/B
DAP0/JTAG Clock Input
If JTAG pos. A is selected during start-up, an
internal pull-up device will hold this pin high when
nothing is driving it.
If DAP pos. 0 is selected during start-up, an
internal pull-down device will hold this pin low
when nothing is driving it.
Data Sheet
18
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Table 5
Pin Definitions and Functions (cont’d)
Pin
Symbol
Ctrl.
38
P10.0
O0 / I St/B
39
40
42
Type Function
Bit 0 of Port 10, General Purpose Input/Output
U0C1_DOUT O1
St/B
USIC0 Channel 1 Shift Data Output
CCU60_CC6
0
O2
St/B
CCU60 Channel 0 Output
CCU60_CC6
0INA
I
St/B
CCU60 Channel 0 Input
ESR1_2
I
St/B
ESR1 Trigger Input 2
U0C0_DX0A
I
St/B
USIC0 Channel 0 Shift Data Input
U0C1_DX0A
I
St/B
USIC0 Channel 1 Shift Data Input
P10.1
O0 / I St/B
Bit 1 of Port 10, General Purpose Input/Output
U0C0_DOUT O1
St/B
USIC0 Channel 0 Shift Data Output
CCU60_CC6
1
O2
St/B
CCU60 Channel 1 Output
CCU60_CC6
1INA
I
St/B
CCU60 Channel 1 Input
U0C0_DX1A
I
St/B
USIC0 Channel 0 Shift Clock Input
U0C0_DX0B
I
St/B
USIC0 Channel 0 Shift Data Input
P10.2
O0 / I St/B
Bit 2 of Port 10, General Purpose Input/Output
U0C0_SCLK
OUT
O1
St/B
USIC0 Channel 0 Shift Clock Output
CCU60_CC6
2
O2
St/B
CCU60 Channel 2 Output
CCU60_CC6
2INA
I
St/B
CCU60 Channel 2 Input
U0C0_DX1B
I
St/B
USIC0 Channel 0 Shift Clock Input
P2.10
O0 / I St/B
Bit 10 of Port 2, General Purpose Input/Output
U0C1_DOUT O1
St/B
USIC0 Channel 1 Shift Data Output
U0C0_SELO
3
O2
St/B
USIC0 Channel 0 Select/Control 3 Output
CC2_CC23
O3 / I St/B
CAPCOM2 CC23IO Capture Inp./ Compare Out.
U0C1_DX0E
I
St/B
USIC0 Channel 1 Shift Data Input
CAPINA
I
St/B
GPT12E Register CAPREL Capture Input
Data Sheet
19
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Table 5
Pin Definitions and Functions (cont’d)
Pin
Symbol
Ctrl.
43
P10.3
O0 / I St/B
44
45
46
Type Function
Bit 3 of Port 10, General Purpose Input/Output
CCU60_COU O2
T60
St/B
CCU60 Channel 0 Output
U0C0_DX2A
I
St/B
USIC0 Channel 0 Shift Control Input
U0C1_DX2A
I
St/B
USIC0 Channel 1 Shift Control Input
P10.4
O0 / I St/B
Bit 4 of Port 10, General Purpose Input/Output
U0C0_SELO
3
O1
St/B
USIC0 Channel 0 Select/Control 3 Output
CCU60_COU O2
T61
St/B
CCU60 Channel 1 Output
U0C0_DX2B
I
St/B
USIC0 Channel 0 Shift Control Input
U0C1_DX2B
I
St/B
USIC0 Channel 1 Shift Control Input
ESR1_9
I
St/B
ESR1 Trigger Input 9
P10.5
O0 / I St/B
Bit 5 of Port 10, General Purpose Input/Output
U0C1_SCLK
OUT
O1
St/B
USIC0 Channel 1 Shift Clock Output
CCU60_COU O2
T62
St/B
CCU60 Channel 2 Output
U2C0_DOUT O3
St/B
USIC2 Channel 0 Shift Data Output
U0C1_DX1B
I
St/B
USIC0 Channel 1 Shift Clock Input
P10.6
O0 / I St/B
Bit 6 of Port 10, General Purpose Input/Output
U0C0_DOUT O1
St/B
USIC0 Channel 0 Shift Data Output
U1C0_SELO
0
O3
St/B
USIC1 Channel 0 Select/Control 0 Output
U0C0_DX0C
I
St/B
USIC0 Channel 0 Shift Data Input
U1C0_DX2D
I
St/B
USIC1 Channel 0 Shift Control Input
CCU60_CTR
APA
I
St/B
CCU60 Emergency Trap Input
Data Sheet
20
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Table 5
Pin Definitions and Functions (cont’d)
Pin
Symbol
Ctrl.
47
P10.7
O0 / I St/B
Bit 7 of Port 10, General Purpose Input/Output
U0C1_DOUT O1
St/B
USIC0 Channel 1 Shift Data Output
CCU60_COU O2
T63
St/B
CCU60 Channel 3 Output
U0C1_DX0B
51
Type Function
I
St/B
USIC0 Channel 1 Shift Data Input
CCU60_CCP I
OS0A
St/B
CCU60 Position Input 0
T4INB
I
St/B
GPT12E Timer T4 Count/Gate Input
P10.8
O0 / I St/B
Bit 8 of Port 10, General Purpose Input/Output
U0C0_MCLK
OUT
O1
St/B
USIC0 Channel 0 Master Clock Output
U0C1_SELO
0
O2
St/B
USIC0 Channel 1 Select/Control 0 Output
U2C1_DOUT O3
St/B
USIC2 Channel 1 Shift Data Output
CCU60_CCP I
OS1A
St/B
CCU60 Position Input 1
U0C0_DX1C
I
St/B
USIC0 Channel 0 Shift Clock Input
BRKIN_B
I
St/B
OCDS Break Signal Input
T3EUDB
I
St/B
GPT12E Timer T3 External Up/Down Control
Input
Data Sheet
21
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Table 5
Pin Definitions and Functions (cont’d)
Pin
Symbol
Ctrl.
52
P10.9
O0 / I St/B
Bit 9 of Port 10, General Purpose Input/Output
U0C0_SELO
4
O1
St/B
USIC0 Channel 0 Select/Control 4 Output
U0C1_MCLK
OUT
O2
St/B
USIC0 Channel 1 Master Clock Output
CCU60_CCP I
OS2A
St/B
CCU60 Position Input 2
TCK_B
IH
St/B
DAP0/JTAG Clock Input
If JTAG pos. B is selected during start-up, an
internal pull-up device will hold this pin high when
nothing is driving it.
If DAP pos. 1 is selected during start-up, an
internal pull-down device will hold this pin low
when nothing is driving it.
T3INB
I
St/B
GPT12E Timer T3 Count/Gate Input
P10.10
O0 / I St/B
Bit 10 of Port 10, General Purpose Input/Output
U0C0_SELO
0
O1
St/B
USIC0 Channel 0 Select/Control 0 Output
CCU60_COU O2
T63
St/B
CCU60 Channel 3 Output
U0C0_DX2C
St/B
USIC0 Channel 0 Shift Control Input
53
54
I
Type Function
U0C1_DX1A
I
St/B
USIC0 Channel 1 Shift Clock Input
TDI_B
IH
St/B
JTAG Test Data Input
If JTAG pos. B is selected during start-up, an
internal pull-up device will hold this pin high when
nothing is driving it.
P10.11
O0 / I St/B
Bit 11 of Port 10, General Purpose Input/Output
U1C0_SCLK
OUT
O1
St/B
USIC1 Channel 0 Shift Clock Output
BRKOUT
O2
St/B
OCDS Break Signal Output
U1C0_DX1D
I
St/B
USIC1 Channel 0 Shift Clock Input
TMS_B
IH
St/B
JTAG Test Mode Selection Input
If JTAG pos. B is selected during start-up, an
internal pull-up device will hold this pin high when
nothing is driving it.
Data Sheet
22
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Table 5
Pin Definitions and Functions (cont’d)
Pin
Symbol
Ctrl.
55
P10.12
O0 / I St/B
56
Type Function
Bit 12 of Port 10, General Purpose Input/Output
U1C0_DOUT O1
St/B
USIC1 Channel 0 Shift Data Output
TDO_B
OH /
IH
St/B
JTAG Test Data Output / DAP1 Input/Output
If DAP pos. 1 is selected during start-up, an
internal pull-down device will hold this pin low
when nothing is driving it.
U1C0_DX0C
I
St/B
USIC1 Channel 0 Shift Data Input
U1C0_DX1E
I
St/B
USIC1 Channel 0 Shift Clock Input
P10.13
O0 / I St/B
Bit 13 of Port 10, General Purpose Input/Output
U1C0_DOUT O1
St/B
USIC1 Channel 0 Shift Data Output
U1C0_SELO
3
O3
St/B
USIC1 Channel 0 Select/Control 3 Output
U1C0_DX0D
I
St/B
USIC1 Channel 0 Shift Data Input
P10.14
O0 / I St/B
Bit 14 of Port 10, General Purpose Input/Output
U1C0_SELO
1
O1
St/B
USIC1 Channel 0 Select/Control 1 Output
U0C1_DOUT O2
St/B
USIC0 Channel 1 Shift Data Output
ESR2_2
I
St/B
ESR2 Trigger Input 2
U0C1_DX0C
I
St/B
USIC0 Channel 1 Shift Data Input
P10.15
O0 / I St/B
Bit 15 of Port 10, General Purpose Input/Output
U1C0_SELO
2
O1
St/B
USIC1 Channel 0 Select/Control 2 Output
U0C1_DOUT O2
St/B
USIC0 Channel 1 Shift Data Output
U1C0_DOUT O3
St/B
USIC1 Channel 0 Shift Data Output
U0C1_DX1C
I
St/B
USIC0 Channel 1 Shift Clock Input
60
XTAL2
O
Sp/M Crystal Oscillator Amplifier Output
61
XTAL1
I
Sp/M Crystal Oscillator Amplifier Input
To clock the device from an external source, drive
XTAL1, while leaving XTAL2 unconnected.
Voltages on XTAL1 must comply to the core
supply voltage VDDIM.
ESR2_9
I
St/B
58
59
Data Sheet
ESR2 Trigger Input 9
23
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Table 5
Pin Definitions and Functions (cont’d)
Pin
Symbol
Ctrl.
Type Function
62
PORST
I
In/B
63
ESR0
O0 / I St/B
External Service Request 0
After power-up, ESR0 operates as open-drain
bidirectional reset with a weak pull-up.
U1C0_DX0E
I
St/B
USIC1 Channel 0 Shift Data Input
USIC1 Channel 0 Shift Control Input
Power On Reset Input
A low level at this pin resets the XE162xN
completely. A spike filter suppresses input pulses
100 ns safely pass the filter.
The minimum duration for a safe recognition
should be 120 ns.
An internal pull-up device will hold this pin high
when nothing is driving it.
U1C0_DX2B
I
St/B
6
VDDIM
-
PS/M Digital Core Supply Voltage for Domain M
Decouple with a ceramic capacitor, see Data
Sheet for details.
24,
41,
57
VDDI1
-
PS/1 Digital Core Supply Voltage for Domain 1
Decouple with a ceramic capacitor, see Data
Sheet for details.
All VDDI1 pins must be connected to each other.
9
VDDPA
-
PS/A Digital Pad Supply Voltage for Domain A
Connect decoupling capacitors to adjacent
VDDP/VSS pin pairs as close as possible to the pins.
Note: The A/D_Converters and ports P5, P6 and
P15 are fed from supply voltage VDDPA.
Data Sheet
24
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
Table 5
Pin Definitions and Functions (cont’d)
Pin
Symbol
Ctrl.
Type Function
2,
16,
18,
32,
34,
48,
50,
64
VDDPB
-
PS/B Digital Pad Supply Voltage for Domain B
Connect decoupling capacitors to adjacent
VDDP/VSS pin pairs as close as possible to the pins.
1,
17,
33,
49
VSS
Note: The on-chip voltage regulators and all ports
except P5, P6 and P15 are fed from supply
voltage VDDPB.
Data Sheet
-
PS/-- Digital Ground
All VSS pins must be connected to the ground-line
or ground-plane.
Note: Also the exposed pad is connected
internally to VSS. To improve the EMC
behavior, it is recommended to connect the
exposed pad to the board ground.
For thermal aspects, please refer to the
Data Sheet. Board layout examples are
given in an application note.
25
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
General Device Information
2.2
Identification Registers
The identification registers describe the current version of the XE162xN and of its
modules.
Table 6
XE162xN Identification Registers
Short Name
Value
Address
Notes
SCU_IDMANUF
1820H
00’F07EH
SCU_IDCHIP
3001H
00’F07CH
marking EES-AA or ES-AA
3002H
00’F07CH
marking AA, AB
SCU_IDMEM
304FH
00’F07AH
SCU_IDPROG
1313H
00’F078H
JTAG_ID
0018’B083H
---
marking EES-AA or ES-AA
1018’B083H
---
marking AA, AB
Data Sheet
26
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Functional Description
3
Functional Description
The architecture of the XE162xN combines advantages of RISC, CISC, and DSP
processors with an advanced peripheral subsystem in a well-balanced design. On-chip
memory blocks allow the design of compact systems-on-silicon with maximum
performance suited for computing, control, and communication.
The on-chip memory blocks (program code memory and SRAM, dual-port RAM, data
SRAM) and the generic peripherals are connected to the CPU by separate high-speed
buses. Another bus, the LXBus, connects additional on-chip resources and external
resources. This bus structure enhances overall system performance by enabling the
concurrent operation of several subsystems of the XE162xN.
The block diagram gives an overview of the on-chip components and the advanced
internal bus structure of the XE162xN.
DPRAM
EBC
LXBus Control
External Bus
Control
DMU
Flash Memory
OCDS
Debug Support
DSRAM
CPU
PMU
IMB
PSRAM
MAC Unit
System Functions
MPU
Clock, Reset, Power
Control, StandBy RAM
WDT
Interrupt & PEC
RTC
LXBus
MCHK
ADC0 ADC1
Module Module
8-/10Bit
8-/10Bit
GPT
CC2
Module
CCU6x
Modules
5
Timers
16
Chan.
3+1
Chan.
each
Peripheral Data Bus
Interrupt Bus
USICx
Modules
Multi
CAN
2
Chan.
each
Analog and Digital General Purpose IO (GPIO) Ports
MC_N-SERIES_BLOCKDIAGRAM
Figure 4
Data Sheet
Block Diagram
27
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Functional Description
3.1
Memory Subsystem and Organization
The memory space of the XE162xN is configured in the von Neumann architecture. In
this architecture all internal and external resources, including code memory, data
memory, registers and I/O ports, are organized in the same linear address space.
Table 7
XE162xN Memory Map 1)
Address Area
Start Loc. End Loc.
Area Size2)
IMB register space
FF’FF00H
FF’FFFFH
256 Bytes
Reserved
F0’0000H
FF’FEFFH
< 1 Mbyte
Minus IMB registers
Reserved for EPSRAM
E8’4000H
EF’FFFFH
496 Kbytes
Mirrors EPSRAM
Emulated PSRAM
E8’0000H
E8’3FFFH
up to
16 Kbytes
With Flash timing
Reserved for PSRAM
E0’4000H
E7’FFFFH
496 Kbytes
Mirrors PSRAM
PSRAM
E0’0000H
E0’3FFFH
up to
16 Kbytes
Program SRAM
Reserved for Flash
C5’0000H
DF’FFFFH
1,728 Kbytes
Flash 1
C4’0000H
C4’FFFFH
64 Kbytes
Flash 0
C0’0000H
C3’FFFFH
256 Kbytes3)
External memory area
40’0000H
BF’FFFFH
8 Mbytes
External IO area4)
21’0000H
3F’FFFFH
1,984 Kbytes
Reserved
Notes
Minus res. seg.
20’BC00H
20’FFFFH
17 Kbytes
USIC0–2 alternate regs. 20’B000H
20’BBFFH
3 Kbytes
Accessed via EBC
MultiCAN alternate regs. 20’8000H
20’AFFFH
12 Kbytes
Accessed via EBC
Reserved
20’5800H
20’7FFFH
10 Kbytes
USIC0–2 registers
20’4000H
20’57FFH
6 Kbytes
Reserved
20’6800H
20’7FFFH
6 Kbytes
MultiCAN registers
20’0000H
20’3FFFH
16 Kbytes
External memory area
01’0000H
1F’FFFFH
1984 Kbytes
SFR area
00’FE00H
00’FFFFH
0.5 Kbytes
Dualport RAM (DPRAM) 00’F600H
00’FDFFH
2 Kbytes
Reserved for DPRAM
00’F200H
00’F5FFH
1 Kbytes
ESFR area
00’F000H
00’F1FFH
0.5 Kbytes
XSFR area
00’E000H
00’EFFFH
4 Kbytes
Data SRAM (DSRAM)
00’A000H
00’DFFFH
16 Kbytes
Data Sheet
28
Accessed via EBC
Accessed via EBC
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Functional Description
Table 7
XE162xN Memory Map (cont’d)1)
Address Area
Start Loc. End Loc.
Area Size2)
Reserved for DSRAM
00’8000H
00’9FFFH
8 Kbytes
External memory area
00’0000H
00’7FFFH
32 Kbytes
Notes
1) Accesses to the shaded areas are reserved. In devices with external bus interface these accesses generate
external bus accesses.
2) The areas marked with “ VDDP or VIN < VSS) the
voltage on VDDP pins with respect to ground (VSS) must not exceed the values
defined by the absolute maximum ratings.
Data Sheet
58
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.1.1
Operating Conditions
The following operating conditions must not be exceeded to ensure correct operation of
the XE162xN. All parameters specified in the following sections refer to these operating
conditions, unless otherwise noticed.
Note: Typical parameter values refer to room temperature and nominal supply voltage,
minimum/maximum
parameter
values
also
include
conditions
of
minimum/maximum temperature and minimum/maximum supply voltage.
Additional details are described where applicable.
Table 12
Operating Conditions
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note /
Test Condition
Voltage Regulator Buffer
Capacitance for DMP_M
CEVRM
1.0
−
4.7
μF
1)
Voltage Regulator Buffer
Capacitance for DMP_1
CEVR1
0.47
−
2.2
μF
2)1)
External Load
Capacitance
CL SR
−
203)
−
pF
System frequency
fSYS SR −
IOVA SR -2
Overload current for
analog inputs6)
SR
SR
4)
Overload current for digital IOVD SR -5
inputs6)
Overload current coupling KOVA
factor for analog inputs7)
CC
−
−
Data Sheet
pin out
driver= default
59
5)
−
80
MHz
−
5
mA
not subject to
production test
−
5
mA
not subject to
production test
2.5 x
10-4
1.5 x
10-3
-
IOV< 0 mA; not
1.0 x
10-6
1.0 x
10-4
-
subject to
production test
IOV> 0 mA; not
subject to
production test
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 12
Operating Conditions (cont’d)
Parameter
Symbol
Overload current coupling KOVD
factor for digital I/O pins
CC
Values
Unit
Note /
Test Condition
3.0 x
10-2
-
IOV< 0 mA; not
1.0 x
10-4
5.0 x
10-3
-
mA
Min.
Typ.
Max.
−
1.0 x
10-2
−
subject to
production test
subject to
production test
Σ|IOV|
SR
−
−
50
Digital core supply voltage VDDIM
for domain M8)
CC
−
1.5
−
Digital core supply voltage VDDI1
for domain 18)
CC
−
1.5
−
−
5.5
V
0
−
V
Absolute sum of overload
currents
Digital supply voltage for
IO pads and voltage
regulators
VDDP SR 3.0
Digital ground voltage
VSS SR
−
IOV> 0 mA; not
not subject to
production test
1) To ensure the stability of the voltage regulators the EVRs must be buffered with ceramic capacitors. Separate
buffer capacitors with the recomended values shall be connected as close as possible to each VDDIM and VDDI1
pin to keep the resistance of the board tracks below 2 Ohm. Connect all VDDI1 pins together. The minimum
capacitance value is required for proper operation under all conditions (e.g. temperature). Higher values
slightly increase the startup time.
2) Use one Capacitor for each pin.
3) This is the reference load. For bigger capacitive loads, use the derating factors listed in the pad properties
section.
4) The timing is valid for pin drivers operating in default current mode (selected after reset). Reducing the output
current may lead to increased delays or reduced driving capability (CL).
5) The operating frequency range may be reduced for specific device types. This is indicated in the device
designation (...FxxL). 80 MHz devices are marked ...F80L.
6) Overload conditions occur if the standard operating conditions are exceeded, i.e. the voltage on any pin
exceeds the specified range: VOV > VIHmax (IOV > 0) or VOV < VILmin ((IOV < 0). The absolute sum of input
overload currents on all pins may not exceed 50 mA. The supply voltages must remain within the specified
limits. Proper operation under overload conditions depends on the application. Overload conditions must not
occur on pin XTAL1 (powered by VDDIM).
Data Sheet
60
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
7) An overload current (IOV) through a pin injects a certain error current (IINJ) into the adjacent pins. This error
current adds to the respective pins leakage current (IOZ). The amount of error current depends on the overload
current and is defined by the overload coupling factor KOV. The polarity of the injected error current is inverse
compared to the polarity of the overload current that produces it.The total current through a pin is |ITOT| = |IOZ|
+ (|IOV| KOV). The additional error current may distort the input voltage on analog inputs.
8) Value is controlled by on-chip regulator
4.2
Voltage Range definitions
The XE162xN timing depends on the supply voltage. If such a dependency exists the
timing values are given for 2 voltage areas commonly used. The voltage areas are
defined in the following tables.
Table 13
Upper Voltage Range Definition
Parameter
Symbol
Values
Min.
Digital supply voltage for
IO pads and voltage
regulators
Table 14
VDDP SR 4.5
Max.
5
5.5
Note /
Test Condition
V
Lower Voltage Range Definition
Parameter
Symbol
Digital supply voltage for
IO pads and voltage
regulators
VDDP SR 3.0
Values
Min.
4.2.1
Unit
Typ.
Unit
Typ.
Max.
3.3
4.5
Note /
Test Condition
V
Parameter Interpretation
The parameters listed in the following include both the characteristics of the XE162xN
and its demands on the system. To aid in correctly interpreting the parameters when
evaluating them for a design, they are marked accordingly in the column “Symbol”:
CC (Controller Characteristics):
The logic of the XE162xN provides signals with the specified characteristics.
SR (System Requirement):
The external system must provide signals with the specified characteristics to the
XE162xN.
Data Sheet
61
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.3
DC Parameters
These parameters are static or average values that may be exceeded during switching
transitions (e.g. output current).
The XE162xN can operate within a wide supply voltage range from 3.0 V to 5.5 V.
However, during operation this supply voltage must remain within 10 percent of the
selected nominal supply voltage. It cannot vary across the full operating voltage range.
Because of the supply voltage restriction and because electrical behavior depends on
the supply voltage, the parameters are specified separately for the upper and the lower
voltage range.
During operation, the supply voltages may only change with a maximum speed of
dV/dt < 1 V/ms.
Leakage current is strongly dependent on the operating temperature and the voltage
level at the respective pin. The maximum values in the following tables apply under worst
case conditions, i.e. maximum temperature and an input level equal to the supply
voltage.
The value for the leakage current in an application can be determined by using the
respective leakage derating formula (see tables) with values from that application.
The pads of the XE162xN are designed to operate in various driver modes. The DC
parameter specifications refer to the pad current limits specified in Section 4.7.4.
Data Sheet
62
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Pullup/Pulldown Device Behavior
Most pins of the XE162xN feature pullup or pulldown devices. For some special pins
these are fixed; for the port pins they can be selected by the application.
The specified current values indicate how to load the respective pin depending on the
intended signal level. Figure 13 shows the current paths.
The shaded resistors shown in the figure may be required to compensate system pull
currents that do not match the given limit values.
VDDP
Pullup
Pulldown
VSS
MC_XC2X_PULL
Figure 13
Data Sheet
Pullup/Pulldown Current Definition
63
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.3.1
DC Parameters for Upper Voltage Area
Keeping signal levels within the limits specified in this table ensures operation without
overload conditions. For signal levels outside these specifications, also refer to the
specification of the overload current IOV.
Note: Operating Conditions apply.
Table 15 is valid under the following conditions: VDDP≤ 5.5 V; VDDPtyp. 5 V; VDDP≥ 4.5 V
Table 15
DC Characteristics for Upper Voltage Range
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
−
−
10
pF
not subject to
production test
−
−
V
RS= 0 Ohm
Pin capacitance (digital
inputs/outputs). To be
doubled for double bond
pins.1)
CIO CC
Input Hysteresis2)
HYS CC 0.11 x
VDDP
Absolute input leakage
current on pins of analog
ports3)
|IOZ1|
CC
−
10
200
nA
VIN> VSS ;
VIN< VDDP
Absolute input leakage
current for all other pins.
To be doubled for double
bond pins.3)1)4)
|IOZ2|
CC
−
0.2
5
μA
−
0.2
15
μA
Pull Level Force Current5) |IPLF| SR 250
−
−
μA
Pull Level Keep Current6)
|IPLK|
SR
−
−
30
μA
TJ≤ 110 °C;
VIN> VSS ;
VIN< VDDP
TJ≤ 150 °C;
VIN> VSS ;
VIN< VDDP
VIN≥ VIHmin(pull
down_enabled);
VIN≤ VILmax(pull
up_enabled)
VIN≥ VIHmin(pull
up_enabled);
VIN≤ VILmax(pull
down_enabled)
Input high voltage (all
except XTAL1)
VIH SR
0.7 x
−
Input low voltage
(all except XTAL1)
VIL SR
Data Sheet
VDDP
−
-0.3
VDDP + V
0.3
0.3 x
V
VDDP
64
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 15
DC Characteristics for Upper Voltage Range (cont’d)
Parameter
Symbol
Values
Min.
Output High voltage7)
Typ.
Unit
Note /
Test Condition
Max.
VOH CC VDDP - −
−
V
IOH≥ IOHmax
VDDP - −
−
V
IOH≥ IOHnom 8)
−
−
0.4
V
−
−
1.0
V
IOL≤ IOLnom 8)
IOL≤ IOLmax
1.0
0.4
Output Low Voltage
7)
VOL CC
1) Because each double bond pin is connected to two pads (standard pad and high-speed pad), it has twice the
normal value. For a list of affected pins refer to the pin definitions table in chapter 2.
2) Not subject to production test - verified by design/characterization. Hysteresis is implemented to avoid
metastable states and switching due to internal ground bounce. It cannot suppress switching due to external
system noise under all conditions.
3) If the input voltage exceeds the respective supply voltage due to ground bouncing (VIN < VSS) or supply ripple
(VIN > VDDP), a certain amount of current may flow through the protection diodes. This current adds to the
leakage current. An additional error current (IINJ) will flow if an overload current flows through an adjacent pin.
Please refer to the definition of the overload coupling factor KOV.
4) The given values are worst-case values. In production test, this leakage current is only tested at 125 °C; other
values are ensured by correlation. For derating, please refer to the following descriptions: Leakage derating
depending on temperature (TJ = junction temperature [°C]): IOZ = 0.05 x e(1.5 + 0.028 x TJ>) [μA]. For example, at
a temperature of 95 °C the resulting leakage current is 3.2 μA. Leakage derating depending on voltage level
(DV = VDDP - VPIN [V]): IOZ = IOZtempmax - (1.6 x DV) (μA]. This voltage derating formula is an approximation
which applies for maximum temperature.
5) Drive the indicated minimum current through this pin to change the default pin level driven by the enabled pull
device.
6) Limit the current through this pin to the indicated value so that the enabled pull device can keep the default
pin level.
7) The maximum deliverable output current of a port driver depends on the selected output driver mode. This
specification is not valid for outputs which are switched to open drain mode. In this case the respective output
will float and the voltage is determined by the external circuit.
8) As a rule, with decreasing output current the output levels approach the respective supply level (VOL->VSS,
VOH->VDDP). However, only the levels for nominal output currents are verified.
Data Sheet
65
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.3.2
DC Parameters for Lower Voltage Area
Keeping signal levels within the limits specified in this table ensures operation without
overload conditions. For signal levels outside these specifications, also refer to the
specification of the overload current IOV.
Note: Operating Conditions apply.
Table 16
is valid under the following conditions: VDDP≥ 3.0 V; VDDPtyp. 3.3 V;
VDDP≤ 4.5 V
Table 16
DC Characteristics for Lower Voltage Range
Parameter
Symbol
Values
Pin capacitance (digital
inputs/outputs). To be
doubled for double bond
pins.1)
CIO CC
Input Hysteresis2)
HYS CC 0.07 x
Unit
Note /
Test Condition
Min.
Typ.
Max.
−
−
10
pF
not subject to
production test
−
−
V
RS= 0 Ohm
VDDP
Absolute input leakage
current on pins of analog
ports3)
|IOZ1|
CC
−
10
200
nA
VIN> VSS ;
VIN< VDDP
Absolute input leakage
current for all other pins.
To be doubled for double
bond pins.3)1)4)
|IOZ2|
CC
−
0.2
2.5
μA
−
0.2
8
μA
Pull Level Force Current5) |IPLF| SR 150
−
−
μA
Pull Level Keep Current6)
|IPLK|
SR
−
−
10
μA
TJ≤ 110 °C;
VIN> VSS ;
VIN< VDDP
TJ≤ 150 °C;
VIN> VSS ;
VIN< VDDP
VIN≥ VIHmin(pull
down) ;
VIN≤ VILmax(pull
up)
VIN≥ VIHmin(pull
up) ;
VIN≤ VILmax(pull
down)
Input high voltage (all
except XTAL1)
VIH SR
0.7 x
−
Input low voltage
(all except XTAL1)
VIL SR
Data Sheet
VDDP
−
-0.3
VDDP + V
0.3
0.3 x
V
VDDP
66
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 16
DC Characteristics for Lower Voltage Range (cont’d)
Parameter
Symbol
Values
Min.
Output High voltage7)
Typ.
Unit
Note /
Test Condition
Max.
VOH CC VDDP - −
−
V
IOH≥ IOHmax
VDDP - −
−
V
IOH≥ IOHnom 8)
−
−
0.4
V
−
−
1.0
V
IOL≤ IOLnom 8)
IOL≤ IOLmax
1.0
0.4
Output Low Voltage
7)
VOL CC
1) Because each double bond pin is connected to two pads (standard pad and high-speed pad), it has twice the
normal value. For a list of affected pins refer to the pin definitions table in chapter 2.
2) Not subject to production test - verified by design/characterization. Hysteresis is implemented to avoid
metastable states and switching due to internal ground bounce. It cannot suppress switching due to external
system noise under all conditions.
3) If the input voltage exceeds the respective supply voltage due to ground bouncing (VIN < VSS) or supply ripple
(VIN > VDDP), a certain amount of current may flow through the protection diodes. This current adds to the
leakage current. An additional error current (IINJ) will flow if an overload current flows through an adjacent pin.
Please refer to the definition of the overload coupling factor KOV.
4) The given values are worst-case values. In production test, this leakage current is only tested at 125 °C; other
values are ensured by correlation. For derating, please refer to the following descriptions: Leakage derating
depending on temperature (TJ = junction temperature [°C]): IOZ = 0.05 x e(1.5 + 0.028 x TJ>) [μA]. For example, at
a temperature of 95 °C the resulting leakage current is 3.2 μA. Leakage derating depending on voltage level
(DV = VDDP - VPIN [V]): IOZ = IOZtempmax - (1.6 x DV) (μA]. This voltage derating formula is an approximation
which applies for maximum temperature.
5) Drive the indicated minimum current through this pin to change the default pin level driven by the enabled pull
device: VPIN = VIH for a pulldown.
6) Limit the current through this pin to the indicated value so that the enabled pull device can keep the default
pin level: VPIN >= VIH for a pullup; VPIN VSS,
VOH->VDDP). However, only the levels for nominal output currents are verified.
Data Sheet
67
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.3.3
Power Consumption
The power consumed by the XE162xN depends on several factors such as supply
voltage, operating frequency, active circuits, and operating temperature. The power
consumption specified here consists of two components:
•
•
The switching current IS depends on the device activity
The leakage current ILK depends on the device temperature
To determine the actual power consumption, always both components, switching current
IS and leakage current ILK must be added:
IDDP = IS + ILK.
Note: The power consumption values are not subject to production test. They are
verified by design/characterization.
To determine the total power consumption for dimensioning the external power
supply, also the pad driver currents must be considered.
The given power consumption parameters and their values refer to specific operating
conditions:
•
•
Active mode:
Regular operation, i.e. peripherals are active, code execution out of Flash.
Stopover mode:
Crystal oscillator and PLL stopped, Flash switched off, clock in domain DMP_1
stopped.
Note: The maximum values cover the complete specified operating range of all
manufactured devices.
The typical values refer to average devices under typical conditions, such as
nominal supply voltage, room temperature, application-oriented activity.
After a power reset, the decoupling capacitors for VDDIM and VDDI1 are charged with
the maximum possible current.
For additional information, please refer to Section 5.2, Thermal Considerations.
Note: Operating Conditions apply.
Data Sheet
68
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 17
Parameter
Switching Power Consumption
Symbol
Power supply current
ISACT
(active) with all peripherals CC
active and EVVRs on
Values
Unit
Typ.
−
6 + 0.6 8 + 1.0 mA
x fSYS1) x fSYS1)
power_mode=
active ;
voltage_range=
both 2)3)4)
0.7
power_mode=
stopover ;
voltage_range=
both 4)
Power supply current in
ISSO CC −
stopover mode, EVVRs on
Max.
Note /
Test Condition
Min.
2.0
mA
1) fSYS in MHz
2) The pad supply voltage pins (VDDPB) provide the input current for the on-chip EVVRs and the current
consumed by the pin output drivers. A small current is consumed because the drivers input stages are
switched. In Fast Startup Mode (with the Flash modules deactivated), the typical current is reduced to 3 + 0.6
x fSYS.
3) Please consider the additional conditions described in section "Active Mode Power Supply Current".
4) The pad supply voltage has only a minor influence on this parameter.
Active Mode Power Supply Current
The actual power supply current in active mode not only depends on the system
frequency but also on the configuration of the XE162xN’s subsystem.
Besides the power consumed by the device logic the power supply pins also provide the
current that flows through the pin output drivers.
A small current is consumed because the drivers’ input stages are switched.
The IO power domains can be supplied separately. Power domain A (VDDPA) supplies the
A/D converters and Port 6. Power domain B (VDDPB) supplies the on-chip EVVRs and all
other ports.
During operation domain A draws a maximum current of 1.5 mA for each active A/D
converter module from VDDPA.
In Fast Startup Mode (with the Flash modules deactivated), the typical current is reduced
to 3 + 0.6×fSYS mA.
Data Sheet
69
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
IS [mA]
100
ISACTmax
90
80
70
ISACTtyp
60
50
40
30
20
10
20
60
40
80
fSYS [MHz]
MC_XC2XN_IS
Figure 14
Supply Current in Active Mode as a Function of Frequency
Note: Operating Conditions apply.
Table 18
Leakage Power Consumption
Parameter
Symbol
Leakage supply current 1)
ILK1 CC
Values
Unit
Note /
Test Condition
TJ= 25 °C1)
TJ= 85 °C1)
TJ= 125 °C1)
TJ= 150 °C1)
Min.
Typ.
Max.
−
0.03
0.04
mA
−
0.5
1.2
mA
−
1.9
5.5
mA
−
3.9
12.2
mA
1) All inputs (including pins configured as inputs) are set at 0 V to 0.1 V or at VDDP - 0.1 V to VDDP and all outputs
(including pins configured as outputs) are disconnected.
Data Sheet
70
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Note: A fraction of the leakage current flows through domain DMP_A (pin VDDPA). This
current can be calculated as 7,000 × e-α, with α = 5000 / (273 + 1.3 × TJ).
For TJ = 150°C, this results in a current of 160 μA.
Leakage Power Consumption Calculation
The leakage power consumption can be calculated according to the following formula:
ILK1 = 530,000 × e-α with α = 5000 / (273 + B × TJ)
Parameter B must be replaced by
•
•
1.0 for typical values
1.3 for maximum values
ILK [mA]
ILK1max
12
10
8
6
ILK1typ
4
2
-50
0
100
50
125
150
TJ [°C]
MC_XC2XN_ILKN
Figure 15
Leakage Supply Current as a Function of Temperature
Data Sheet
71
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.4
Analog/Digital Converter Parameters
These parameters describe the conditions for optimum ADC performance.
Note: Operating Conditions apply.
Table 19
ADC Parameters
Parameter
Symbol
Switched capacitance at
an analog input
CAINSW
Values
Min.
Typ.
Max.
−
−
4
Unit
Note /
Test Condition
pF
not subject to
production test
CC
1)
−
Total capacitance at an
analog input
CAINT
Switched capacitance at
the reference input
CAREFSW −
Total capacitance at the
reference input
CAREFT
−
10
pF
CC
not subject to
production test
1)
−
7
pF
CC
not subject to
production test
1)
−
−
15
pF
CC
not subject to
production test
1)
Differential Non-Linearity
Error
|EADNL|
CC
−
0.8
1
LSB
Gain Error
|EAGAIN| −
CC
0.4
0.8
LSB
Integral Non-Linearity
|EAINL|
CC
−
0.8
1.2
LSB
Offset Error
|EAOFF|
CC
−
0.5
0.8
LSB
Analog clock frequency
fADCI SR 0.5
−
16.5
MHz voltage_range=
lower
0.5
−
20
MHz voltage_range=
upper
−
2
kOh
m
not subject to
production test
kOh
m
not subject to
production test
Input resistance of the
selected analog channel
Input resistance of the
reference input
RAIN CC −
RAREF
−
−
CC
2
1)
1)
Data Sheet
72
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 19
ADC Parameters (cont’d)
Parameter
Symbol
Values
Min.
Unit
Typ.
Max.
Broken wire detection
delay against VAGND2)
tBWG CC −
−
503)
Broken wire detection
delay against VAREF2)
tBWR CC −
−
504)
Conversion time for 8-bit
result2)
tc8 CC
(11+S −
TC) x
tADCI +
2x
Note /
Test Condition
−
tSYS
Conversion time for 10-bit tc10 CC
result2)
(13+S −
TC) x
tADCI +
−
2x
tSYS
−
1
2
LSB
Wakeup time from analog tWAF CC −
powerdown, fast mode
−
4
μs
Wakeup time from analog tWAS CC −
powerdown, slow mode
−
15
μs
−
1.5
V
VAIN SR VAGND
−
VAREF
V
VAREF
−
VDDPA
V
Total Unadjusted Error
Analog reference ground
|TUE|
CC
VAGND
SR
Analog input voltage
range
Analog reference voltage
SR
VSS -
5)
0.05
VAGND
+ 1.0
6)
+ 0.05
1) These parameter values cover the complete operating range. Under relaxed operating conditions
(temperature, supply voltage) typical values can be used for calculation. At room temperature and nominal
supply voltage the following typical values can be used: CAINTtyp = 12 pF, CAINStyp = 5 pF, RAINtyp = 1.0 kOhm,
CAREFTtyp = 15 pF, CAREFStyp = 10 pF, RAREFtyp = 1.0 kOhm.
2) This parameter includes the sample time (also the additional sample time specified by STC), the time to
determine the digital result and the time to load the result register with the conversion result. Values for the
basic clock tADCI depend on programming.
3) The broken wire detection delay against VAGND is measured in numbers of consecutive precharge cycles at a
conversion rate of not more than 500 μs. Result below 10% (66H)
Data Sheet
73
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4) The broken wire detection delay against VAREF is measured in numbers of consecutive precharge cycles at a
conversion rate of not more than 10 μs. This function is influenced by leakage current, in particular at high
temperature. Result above 80% (332H)
5) TUE is tested at VAREF = VDDPA = 5.0 V, VAGND = 0 V. It is verified by design for all other voltages within the
defined voltage range. The specified TUE is valid only if the absolute sum of input overload currents on analog
port pins (see IOV specification) does not exceed 10 mA, and if VAREF and VAGND remain stable during the
measurement time.
6) VAIN may exceed VAGND or VAREF up to the absolute maximum ratings. However, the conversion result in these
cases will be X000H or X3FFH, respectively.
RSource
V AIN
R AIN, On
C AINT - C AINS
C Ext
A/D Converter
CAINS
MCS05570
Figure 16
Data Sheet
Equivalent Circuitry for Analog Inputs
74
V1.5, 2013-02
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XE166 Family / Value Line
Electrical Parameters
Sample time and conversion time of the XE162xN’s A/D converters are programmable.
The timing above can be calculated using Table 20.
The limit values for fADCI must not be exceeded when selecting the prescaler value.
Table 20
A/D Converter Computation Table
GLOBCTR.5-0
(DIVA)
A/D Converter
Analog Clock fADCI
INPCRx.7-0
(STC)
000000B
fSYS
fSYS / 2
fSYS / 3
fSYS / (DIVA+1)
fSYS / 63
fSYS / 64
00H
000001B
000010B
:
111110B
111111B
01H
02H
:
FEH
FFH
Sample Time1)
tS
tADCI × 2
tADCI × 3
tADCI × 4
tADCI × (STC+2)
tADCI × 256
tADCI × 257
1) The selected sample time is doubled if broken wire detection is active (due to the presampling phase).
Converter Timing Example A:
Assumptions:
Analog clock
Sample time
fSYS
fADCI
tS
= 80 MHz (i.e. tSYS = 12.5 ns), DIVA = 03H, STC = 00H
= fSYS / 4 = 20 MHz, i.e. tADCI = 50 ns
= tADCI × 2 = 100 ns
Conversion 10-bit:
tC10
= 13 × tADCI + 2 × tSYS = 13 × 50 ns + 2 × 12.5 ns = 0.675 μs
Conversion 8-bit:
tC8
= 11 × tADCI + 2 × tSYS = 11 × 50 ns + 2 × 12.5 ns = 0.575 μs
Converter Timing Example B:
Assumptions:
Analog clock
Sample time
fSYS
fADCI
tS
= 40 MHz (i.e. tSYS = 25 ns), DIVA = 02H, STC = 03H
= fSYS / 3 = 13.3 MHz, i.e. tADCI = 75 ns
= tADCI × 5 = 375 ns
Conversion 10-bit:
tC10
= 16 × tADCI + 2 × tSYS = 16 × 75 ns + 2 × 25 ns = 1.25 μs
Conversion 8-bit:
tC8
Data Sheet
= 14 × tADCI + 2 × tSYS = 14 × 75 ns + 2 × 25 ns = 1.10 μs
75
V1.5, 2013-02
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XE166 Family / Value Line
Electrical Parameters
4.5
System Parameters
The following parameters specify several aspects which are important when integrating
the XE162xN into an application system.
Note: These parameters are not subject to production test but verified by design and/or
characterization.
Note: Operating Conditions apply.
Table 21
Various System Parameters
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
ΔTJ ≤ 10°C
Short-term deviation of
internal clock source
frequency1)
ΔfINT CC -1
−
1
%
Internal clock source
frequency
fINT CC
4.8
5.0
5.2
MHz
Wakeup clock source
frequency2)
fWU CC
400
−
700
kHz
FREQSEL= 00
210
−
390
kHz
FREQSEL= 01
140
−
260
kHz
FREQSEL= 10
110
−
200
kHz
FREQSEL= 11
2.0
2.4
ms
fWU= 500 kHz
−
12 /
μs
VLV +
V
Startup time from poweron with code execution
from Flash
tSPO CC 1.5
Startup time from stopover tSSO CC 11 /
mode with code execution
fWU3)
from PSRAM
fWU3)
5)
Core voltage (PVC)
supervision level
VPVC CC VLV -
VLV
Supply watchdog (SWD)
supervision level
VSWD
VLV -
VLV
VLV +
0.15
V
voltage_range=
lower 5)
VLV 0.15
VLV
VLV +
0.15
V
voltage_range=
upper 5)
VLV -
VLV
VLV +
V
VLV = 5.5 V 5)
0.03
CC
0.106)
0.30
0.07
0.30
4)
1) The short-term frequency deviation refers to a timeframe of a few hours and is measured relative to the current
frequency at the beginning of the respective timeframe. This parameter is useful to determine a time span for
re-triggering a LIN synchronization.
Data Sheet
76
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
2) This parameter is tested for the fastest and the slowest selection. The medium selections are not subject to
production test - verified by design/characterization
3) fWU in MHz
4) This value includes a hysteresis of approximately 50 mV for rising voltage.
5) VLV = selected SWD voltage level
6) The limit VLV - 0.10 V is valid for the OK1 level. The limit for the OK2 level is VLV - 0.15 V.
Conditions for tSPO Timing Measurement
The time required for the transition from Power-on to Base mode is called tSPO. It is
measured under the following conditions:
Precondition: The pad supply is valid, i.e. VDDPB is above 3.0V and remains above 3.0V
even though the XE162xN is starting up. No debugger is attached.
Start condition: Power-on reset is removed (PORST = 1).
End condition: External pin toggle caused by first user instruction executed from FLASH
after startup.
Conditions for tSSO Timing Measurement
The time required for the transition from Stopover to Stopover Waked-Up mode is
called tSSO. It is measured under the following conditions:
Precondition: The Stopover mode has been entered using the procedure defined in the
Programmer’s Guide.
Start condition: Pin toggle on ESR pin triggering the startup sequence.
End condition: External pin toggle caused by first user instruction executed from PSRAM
after startup.
Data Sheet
77
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Coding of bit fields LEVxV in SWD Configuration Registers
After power-on the supply watch dog is preconfigured to operate in the lower voltage
range.
Table 22
Coding of bit fields LEVxV in Register SWDCON0
Code
Voltage Level
Notes1)
0000B
-
out of valid operation range
0001B
3.0 V
LEV1V: reset request
0010B - 0101B
3.1 V- 3.4 V
step width is 0.1 V
0110B
3.6 V
0111B
4.0 V
1000B
4.2 V
1001B
4.5 V
LEV2V: no request
1010B - 1110B
4.6 V - 5.0 V
step width is 0.1 V
1111B
5.5 V
1) The indicated default levels for LEV1V and LEV2V are selected automatically after a power-on reset.
Coding of bit fields LEVxV in PVC Configuration Registers
The core voltages are controlled internally to the nominal value of 1.5 V; a variation of
±10 % is allowed. These operation conditions limit the possible PVC monitoring values
to the predefined reset values shown in Table 23.
Table 23
Coding of bit fields LEVxV in Registers PVCyCONz
Code
Voltage Level
Notes1)
000B-011B
-
out of valid operation range
100B
1.35 V
LEV1V: reset request
101B
1.45 V
LEV2V: interrupt request2)
110B - 111B
-
out of valid operation range
1) The indicated default levels for LEV1V and LEV2V are selected automatically after a power-on reset.
2) Due to variations of the tolerance of both the Embedded Voltage Regulators (EVR) and the PVC levels, this
interrupt can be triggered inadvertently, even though the core voltage is within the normal range. It is,
therefore, recommended not to use this warning level.
Data Sheet
78
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.6
Flash Memory Parameters
The XE162xN is delivered with all Flash sectors erased and with no protection installed.
The data retention time of the XE162xN’s Flash memory (i.e. the time after which stored
data can still be retrieved) depends on the number of times the Flash memory has been
erased and programmed.
Note: These parameters are not subject to production test but verified by design and/or
characterization.
Note: Operating Conditions apply.
Table 24
Flash Parameters
Parameter
Symbol
NPP SR
Parallel Flash module
program/erase limit
depending on Flash read
activity
Values
Unit
Min.
Typ.
Max.
−
−
21)
−
1
2)
−
Flash erase endurance
for security pages
NSEC SR 10
−
−
Flash wait states3)
NWSFLAS 1
−
−
2
−
−
3
−
−
4
−
H SR
NFL_RD≤ 1
NFL_RD> 1
cycles tRET≥ 20 years
fSYS≤ 8 MHz
fSYS≤ 13 MHz
fSYS≤ 17 MHz
fSYS> 17 MHz
−
4)
Note /
Test Condition
Erase time per
sector/page
tER CC
−
7
8.0
ms
Programming time per
page
tPR CC
−
34)
3.5
ms
Data retention time
tRET CC 20
−
−
years
NDD SR 32
NER SR −
−
−
−
15.000 cycles tRET≥ 5 years;
Valid for Flash
module 1 (up to
64 kbytes)
−
1.000
Drain disturb limit
Number of erase cycles
NER≤ 1,000 cycl
es
−
cycles
cycles tRET≥ 20 years
1) The unused Flash module(s) can be erased/programmed while code is executed and/or data is read from only
one Flash module or from PSRAM. The Flash module that delivers code/data can, of course, not be
erased/programmed.
Data Sheet
79
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
2) Flash module 1 can be erased/programmed while code is executed and/or data is read from Flash module 0.
3) Value of IMB_IMBCTRL.WSFLASH.
4) Programming and erase times depend on the internal Flash clock source. The control state machine needs a
few system clock cycles. This increases the stated durations noticably only at extremely low system clock
frequencies.
Access to the XE162xN Flash modules is controlled by the IMB. Built-in prefetch
mechanisms optimize the performance for sequential access.
Flash access waitstates only affect non-sequential access. Due to prefetch
mechanisms, the performance for sequential access (depending on the software
structure) is only partially influenced by waitstates.
Data Sheet
80
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.7
AC Parameters
These parameters describe the dynamic behavior of the XE162xN.
4.7.1
Testing Waveforms
These values are used for characterization and production testing (except pin XTAL1).
Output delay
Output delay
Hold time
Hold time
0.8 V DDP
0.7 V DDP
Input Signal
(driven by tester)
0.3 V DDP
0.2 V DDP
Output Signal
(measured)
Output timings refer to the rising edge of CLKOUT.
Input timings are calculated from the time, when the input signal reaches
V IH or V IL, respectively.
MCD05556C
Figure 17
Input Output Waveforms
VLoad + 0.1 V
Timing
Reference
Points
V Load - 0.1 V
V OH - 0.1 V
V OL + 0.1 V
For timing purposes a port pin is no longer floating when a 100 mV
change from load voltage occurs, but begins to float when a 100 mV
change from the loaded V OH /V OL level occurs (IOH / IOL = 20 mA).
MCA05565
Figure 18
Data Sheet
Floating Waveforms
81
V1.5, 2013-02
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XE166 Family / Value Line
Electrical Parameters
4.7.2
Definition of Internal Timing
The internal operation of the XE162xN is controlled by the internal system clock fSYS.
Because the system clock signal fSYS can be generated from a number of internal and
external sources using different mechanisms, the duration of the system clock periods
(TCSs) and their variation (as well as the derived external timing) depend on the
mechanism used to generate fSYS. This must be considered when calculating the timing
for the XE162xN.
Phase Locked Loop Operation (1:N)
fI N
f SYS
TCS
Direct Clock Drive (1:1)
fI N
f SYS
TCS
Prescaler Operation (N:1)
fI N
f SYS
TCS
M C_XC2X_CLOCKGEN
Figure 19
Generation Mechanisms for the System Clock
Note: The example of PLL operation shown in Figure 19 uses a PLL factor of 1:4; the
example of prescaler operation uses a divider factor of 2:1.
The specification of the external timing (AC Characteristics) depends on the period of the
system clock (TCS).
Data Sheet
82
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Direct Drive
When direct drive operation is selected (SYSCON0.CLKSEL = 11B), the system clock is
derived directly from the input clock signal CLKIN1:
fSYS = fIN.
The frequency of fSYS is the same as the frequency of fIN. In this case the high and low
times of fSYS are determined by the duty cycle of the input clock fIN.
Selecting Bypass Operation from the XTAL11) input and using a divider factor of 1 results
in a similar configuration.
Prescaler Operation
When prescaler operation is selected (SYSCON0.CLKSEL = 10B, PLLCON0.VCOBY =
1B), the system clock is derived either from the crystal oscillator (input clock signal
XTAL1) or from the internal clock source through the output prescaler K1 (= K1DIV+1):
fSYS = fOSC / K1.
If a divider factor of 1 is selected, the frequency of fSYS equals the frequency of fOSC. In
this case the high and low times of fSYS are determined by the duty cycle of the input
clock fOSC (external or internal).
The lowest system clock frequency results from selecting the maximum value for the
divider factor K1:
fSYS = fOSC / 1024.
4.7.2.1
Phase Locked Loop (PLL)
When PLL operation is selected (SYSCON0.CLKSEL = 10B, PLLCON0.VCOBY = 0B),
the on-chip phase locked loop is enabled and provides the system clock. The PLL
multiplies the input frequency by the factor F (fSYS = fIN × F).
F is calculated from the input divider P (= PDIV+1), the multiplication factor N (=
NDIV+1), and the output divider K2 (= K2DIV+1):
(F = N / (P × K2)).
The input clock can be derived either from an external source at XTAL1 or from the onchip clock source.
The PLL circuit synchronizes the system clock to the input clock. This synchronization is
performed smoothly so that the system clock frequency does not change abruptly.
Adjustment to the input clock continuously changes the frequency of fSYS so that it is
locked to fIN. The slight variation causes a jitter of fSYS which in turn affects the duration
of individual TCSs.
1) Voltages on XTAL1 must comply to the core supply voltage VDDIM.
Data Sheet
83
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
The timing in the AC Characteristics refers to TCSs. Timing must be calculated using the
minimum TCS possible under the given circumstances.
The actual minimum value for TCS depends on the jitter of the PLL. Because the PLL is
constantly adjusting its output frequency to correspond to the input frequency (from
crystal or oscillator), the accumulated jitter is limited. This means that the relative
deviation for periods of more than one TCS is lower than for a single TCS (see formulas
and Figure 20).
This is especially important for bus cycles using waitstates and for the operation of
timers, serial interfaces, etc. For all slower operations and longer periods (e.g. pulse train
generation or measurement, lower baudrates, etc.) the deviation caused by the PLL jitter
is negligible.
The value of the accumulated PLL jitter depends on the number of consecutive VCO
output cycles within the respective timeframe. The VCO output clock is divided by the
output prescaler K2 to generate the system clock signal fSYS. The number of VCO cycles
is K2 × T, where T is the number of consecutive fSYS cycles (TCS).
The maximum accumulated jitter (long-term jitter) DTmax is defined by:
DTmax [ns] = ±(220 / (K2 × fSYS) + 4.3)
This maximum value is applicable, if either the number of clock cycles T > (fSYS / 1.2) or
the prescaler value K2 > 17.
In all other cases for a timeframe of T × TCS the accumulated jitter DT is determined by:
DT [ns] = DTmax × [(1 - 0.058 × K2) × (T - 1) / (0.83 × fSYS - 1) + 0.058 × K2]
fSYS in [MHz] in all formulas.
Example, for a period of 3 TCSs @ 33 MHz and K2 = 4:
Dmax = ±(220 / (4 × 33) + 4.3) = 5.97 ns (Not applicable directly in this case!)
D3 = 5.97 × [(1 - 0.058 × 4) × (3 - 1) / (0.83 × 33 - 1) + 0.058 × 4]
= 5.97 × [0.768 × 2 / 26.39 + 0.232]
= 1.7 ns
Example, for a period of 3 TCSs @ 33 MHz and K2 = 2:
Dmax = ±(220 / (2 × 33) + 4.3) = 7.63 ns (Not applicable directly in this case!)
D3 = 7.63 × [(1 - 0.058 × 2) × (3 - 1) / (0.83 × 33 - 1) + 0.058 × 2]
= 7.63 × [0.884 × 2 / 26.39 + 0.116]
= 1.4 ns
Data Sheet
84
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Acc. jitter DT
ns
±9
fSYS = 33 MHz fSYS = 66 MHz
fVCO = 66 MHz
±8
±7
f VCO = 132 MHz
±6
±5
±4
±3
±2
±1
0
Cycles T
1
20
40
60
80
100
MC_XC2X_JITTER
Figure 20
Approximated Accumulated PLL Jitter
Note: The specified PLL jitter values are valid if the capacitive load per pin does not
exceed CL = 20 pF.
The maximum peak-to-peak noise on the pad supply voltage (measured between
VDDPB pin 64 and VSS pin 1) is limited to a peak-to-peak voltage of VPP = 50 mV.
This can be achieved by appropriate blocking of the supply voltage as close as
possible to the supply pins and using PCB supply and ground planes.
PLL frequency band selection
Different frequency bands can be selected for the VCO so that the operation of the PLL
can be adjusted to a wide range of input and output frequencies:
Data Sheet
85
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 25
System PLL Parameters
Parameter
Symbol
Values
Min.
VCO output frequency
4.7.2.2
Unit
Note /
Test Condition
Typ.
Max.
fVCO CC 50
−
110
MHz VCOSEL= 00b;
VCOmode=
controlled
10
−
40
MHz VCOSEL= 00b;
VCOmode=
free running
100
−
160
MHz VCOSEL= 01b;
VCOmode=
controlled
20
−
80
MHz VCOSEL= 01b;
VCOmode=
free running
Wakeup Clock
When wakeup operation is selected (SYSCON0.CLKSEL = 00B), the system clock is
derived from the low-frequency wakeup clock source:
fSYS = fWU.
In this mode, a basic functionality can be maintained without requiring an external clock
source and while minimizing the power consumption.
4.7.2.3
Selecting and Changing the Operating Frequency
When selecting a clock source and the clock generation method, the required
parameters must be carefully written to the respective bit fields, to avoid unintended
intermediate states.
Many applications change the frequency of the system clock (fSYS) during operation in
order to optimize system performance and power consumption. Changing the operating
frequency also changes the switching currents, which influences the power supply.
To ensure proper operation of the on-chip EVRs while they generate the core voltage,
the operating frequency shall only be changed in certain steps. This prevents overshoots
and undershoots of the supply voltage.
To avoid the indicated problems, recommended sequences are provided which ensure
the intended operation of the clock system interacting with the power system.
Please refer to the Programmer’s Guide.
Data Sheet
86
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.7.3
External Clock Input Parameters
These parameters specify the external clock generation for the XE162xN. The clock can
be generated in two ways:
•
•
By connecting a crystal or ceramic resonator to pins XTAL1/XTAL2.
By supplying an external clock signal
– This clock signal can be supplied either to pin XTAL1 (core voltage domain) or to
pin CLKIN1 (IO voltage domain).
If connected to CLKIN1, the input signal must reach the defined input levels VIL and VIH.
If connected to XTAL1, a minimum amplitude VAX1 (peak-to-peak voltage) is sufficient for
the operation of the on-chip oscillator.
Note: The given clock timing parameters (t1 … t4) are only valid for an external clock
input signal.
Note: Operating Conditions apply.
Table 26
External Clock Input Characteristics
Parameter
Symbol
Values
Min.
Oscillator frequency
XTAL1 input current
absolute value
XTAL11)
Max.
fOSC SR 4
−
40
MHz Input= Clock
Signal
4
−
16
MHz Input= Crystal
or Ceramic
Resonator
−
−
20
μA
6
−
−
ns
6
−
−
ns
−
8
8
ns
−
8
8
ns
0.3 x
−
−
V
−
−
V
−
−
V
−
1.7
V
|IIL| CC
VDDIM
0.4 x
VDDIM
0.5 x
VDDIM
Input voltage range limits
for signal on XTAL1
Data Sheet
Note /
Test Condition
Typ.
t1 SR
Input clock low time
t2 SR
t3 SR
Input clock rise time
Input clock fall time
t4 SR
Input voltage amplitude on VAX1 SR
Input clock high time
Unit
VIX1 SR -1.7 +
VDDIM
87
fOSC≥ 4 MHz;
fOSC< 16 MHz
fOSC≥ 16 MHz;
fOSC< 25 MHz
fOSC≥ 25 MHz;
fOSC≤ 40 MHz
2)
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
1) The amplitude voltage VAX1 refers to the offset voltage VOFF. This offset voltage must be stable during the
operation and the resulting voltage peaks must remain within the limits defined by VIX1.
2) Overload conditions must not occur on pin XTAL1.
t1
VOFF
t3
0.9 VAX1
0.1 VAX1
VAX1
t2
t4
tOSC = 1/fOSC
MC_ EXTCLOCK
Figure 21
External Clock Drive XTAL1
Note: For crystal or ceramic resonator operation, it is strongly recommended to measure
the oscillation allowance (negative resistance) in the final target system (layout) to
determine the optimum parameters for oscillator operation.
The manufacturers of crystals and ceramic resonators offer an oscillator
evaluation service. This evaluation checks the crystal/resonator specification
limits to ensure a reliable oscillator operation.
Data Sheet
88
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.7.4
Pad Properties
The output pad drivers of the XE162xN can operate in several user-selectable modes.
Strong driver mode allows controlling external components requiring higher currents
such as power bridges or LEDs. Reducing the driving power of an output pad reduces
electromagnetic emissions (EME). In strong driver mode, selecting a slower edge
reduces EME.
The dynamic behavior, i.e. the rise time and fall time, depends on the applied external
capacitance that must be charged and discharged. Timing values are given for a
capacitance of 20 pF, unless otherwise noted.
In general, the performance of a pad driver depends on the available supply voltage
VDDP. Therefore the following tables list the pad parameters for the upper voltage range
and the lower voltage range, respectively.
Note: These parameters are not subject to production test but verified by design and/or
characterization.
Note: Operating Conditions apply.
Table 27 is valid under the following conditions: VDDP≤ 5.5 V; VDDPtyp. 5 V; VDDP≥ 4.5 V
Table 27
Standard Pad Parameters for Upper Voltage Range
Parameter
Maximum output driver
current (absolute value)1)
Nominal output driver
current (absolute value)
Data Sheet
Symbol
IOmax
Values
Unit
Note /
Test Condition
4.0
mA
Driver_Strength
= Medium
−
10
mA
Driver_Strength
= Strong
−
−
0.5
mA
Driver_Strength
= Weak
−
−
1.0
mA
Driver_Strength
= Medium
−
−
2.5
mA
Driver_Strength
= Strong
−
−
0.1
mA
Driver_Strength
= Weak
Min.
Typ.
Max.
−
−
−
CC
IOnom
CC
89
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 27
Parameter
Standard Pad Parameters for Upper Voltage Range (cont’d)
Symbol
Rise and Fall times (10% - tRF CC
90%)
Values
Min.
Typ.
Max.
−
−
23 +
0.6 x
Unit
Note /
Test Condition
ns
CL≥ 20 pF;
CL≤ 100 pF;
CL
−
−
Driver_Strength
= Medium
11.6 + ns
0.22 x
CL
−
−
4.2 +
0.14 x
Driver_Strength
= Strong ;
Driver_Edge=
Medium
ns
CL
−
−
−
20.6 + ns
0.22 x
212 +
1.9 x
CL
CL≥ 20 pF;
CL≤ 100 pF;
Driver_Strength
= Strong ;
Driver_Edge=
Sharp
CL
−
CL≥ 20 pF;
CL≤ 100 pF;
CL≥ 20 pF;
CL≤ 100 pF;
Driver_Strength
= Strong ;
Driver_Edge=
Slow
ns
CL≥ 20 pF;
CL≤ 100 pF;
Driver_Strength
= Weak
1) An output current above |IOXnom| may be drawn from up to three pins at the same time. For any group of 16
neighboring output pins, the total output current in each direction (ΣIOL and Σ-IOH) must remain below 50 mA.
Data Sheet
90
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 28
Standard Pad Parameters for Lower Voltage Range
Parameter
Maximum output driver
current (absolute value)1)
Nominal output driver
current (absolute value)
Data Sheet
Symbol
IOmax
Values
Unit
Note /
Test Condition
2.5
mA
Driver_Strength
= Medium
−
10
mA
Driver_Strength
= Strong
−
−
0.5
mA
Driver_Strength
= Weak
−
−
1.0
mA
Driver_Strength
= Medium
−
−
2.5
mA
Driver_Strength
= Strong
−
−
0.1
mA
Driver_Strength
= Weak
Min.
Typ.
Max.
−
−
−
CC
IOnom
CC
91
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 28
Parameter
Standard Pad Parameters for Lower Voltage Range (cont’d)
Symbol
Rise and Fall times (10% - tRF CC
90%)
Values
Min.
Typ.
Max.
−
−
37 +
0.65 x
Unit
Note /
Test Condition
ns
CL≥ 20 pF;
CL≤ 100 pF;
CL
−
−
24 +
0.3 x
Driver_Strength
= Medium
ns
CL
−
−
6.2 +
0.24 x
Driver_Strength
= Strong ;
Driver_Edge=
Medium
ns
CL
−
−
34 +
0.3 x
−
500 +
2.5 x
CL
CL≥ 20 pF;
CL≤ 100 pF;
Driver_Strength
= Strong ;
Driver_Edge=
Sharp
ns
CL
−
CL≥ 20 pF;
CL≤ 100 pF;
CL≥ 20 pF;
CL≤ 100 pF;
Driver_Strength
= Strong ;
Driver_Edge=
Slow
ns
CL≥ 20 pF;
CL≤ 100 pF;
Driver_Strength
= Weak
1) An output current above |IOXnom| may be drawn from up to three pins at the same time. For any group of 16
neighboring output pins, the total output current in each direction (ΣIOL and Σ-IOH) must remain below 50 mA.
Data Sheet
92
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.7.5
Synchronous Serial Interface Timing
The following parameters are applicable for a USIC channel operated in SSC mode.
Note: These parameters are not subject to production test but verified by design and/or
characterization.
Note: Operating Conditions apply.
Table 29
is valid under the following conditions: CL= 20 pF; SSC= master ;
voltage_range= upper
Table 29
USIC SSC Master Mode Timing for Upper Voltage Range
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
tSYS -
−
−
ns
Slave select output SELO t1 CC
active to first SCLKOUT
transmit edge
81)
Slave select output SELO t2 CC
inactive after last
SCLKOUT receive edge
61)
tSYS -
−
−
ns
t3 CC
-6
−
9
ns
Receive data input setup t4 SR
time to SCLKOUT receive
edge
31
−
−
ns
t5 SR
-4
−
−
ns
Data output DOUT valid
time
Data input DX0 hold time
from SCLKOUT receive
edge
Note /
Test Condition
1) tSYS = 1 / fSYS
Table 30
is valid under the following conditions: CL= 20 pF; SSC= master ;
voltage_range= lower
Data Sheet
93
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 30
USIC SSC Master Mode Timing for Lower Voltage Range
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
tSYS -
−
−
ns
Slave select output SELO t1 CC
active to first SCLKOUT
transmit edge
101)
Slave select output SELO t2 CC
inactive after last
SCLKOUT receive edge
91)
tSYS -
−
−
ns
t3 CC
-7
−
11
ns
Receive data input setup t4 SR
time to SCLKOUT receive
edge
40
−
−
ns
t5 SR
-5
−
−
ns
Data output DOUT valid
time
Data input DX0 hold time
from SCLKOUT receive
edge
Note /
Test Condition
1) tSYS = 1 / fSYS
Table 31
is valid under the following conditions: CL= 20 pF; SSC= slave ;
voltage_range= upper
Table 31
USIC SSC Slave Mode Timing for Upper Voltage Range
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
t10 SR
7
−
−
ns
Select input DX2 hold after t11 SR
last clock input DX1
receive edge1)
7
−
−
ns
t12 SR
7
−
−
ns
Select input DX2 setup to
first clock input DX1
transmit edge1)
Receive data input setup
time to shift clock receive
edge1)
Data Sheet
94
Note /
Test Condition
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 31
USIC SSC Slave Mode Timing for Upper Voltage Range (cont’d)
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Data input DX0 hold time
from clock input DX1
receive edge1)
t13 SR
5
−
−
ns
Data output DOUT valid
time
t14 CC
7
−
33
ns
Note /
Test Condition
1) These input timings are valid for asynchronous input signal handling of slave select input, shift clock input, and
receive data input (bits DXnCR.DSEN = 0).
Table 32
is valid under the following conditions: CL= 20 pF; SSC= slave ;
voltage_range= lower
Table 32
USIC SSC Slave Mode Timing for Lower Voltage Range
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
t10 SR
7
−
−
ns
Select input DX2 hold after t11 SR
last clock input DX1
receive edge1)
7
−
−
ns
Receive data input setup
time to shift clock receive
edge1)
t12 SR
7
−
−
ns
Data input DX0 hold time
from clock input DX1
receive edge1)
t13 SR
5
−
−
ns
Data output DOUT valid
time
t14 CC
8
−
41
ns
Select input DX2 setup to
first clock input DX1
transmit edge1)
Note /
Test Condition
1) These input timings are valid for asynchronous input signal handling of slave select input, shift clock input, and
receive data input (bits DXnCR.DSEN = 0).
Data Sheet
95
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Master Mode Timing
t1
Select Output
SELOx
t2
Inactive
Inactive
Active
Clock Output
SCLKOUT
Receive
Edge
First Transmit
Edge
Last Receive
Edge
Transmit
Edge
t3
t3
Data Output
DOUT
t4
Data Input
DX0
t4
t5
Data
valid
t5
Data
valid
Slave Mode Timing
t10
Select Input
DX2
Clock Input
DX1
t11
Inactive
Inactive
Active
Receive
Edge
First Transmit
Edge
t12
Data Input
DX0
t12
t13
Data
valid
t 14
Last Receive
Edge
Transmit
Edge
t 13
Data
valid
t14
Data Output
DOUT
Transmit Edge: with this clock edge, transmit data is shifted to transmit data output.
Receive Edge: with this clock edge, receive data at receive data input is latched
.
Drawn for BRGH.SCLKCFG = 00B. Also valid for for SCLKCFG = 01B with inverted SCLKOUT signal.
USIC_SSC_TMGX.VSD
Figure 22
USIC - SSC Master/Slave Mode Timing
Note: This timing diagram shows a standard configuration where the slave select signal
is low-active and the serial clock signal is not shifted and not inverted.
Data Sheet
96
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
4.7.6
Debug Interface Timing
The debugger can communicate with the XE162xN either via the 2-pin DAP interface or
via the standard JTAG interface.
Debug via DAP
The following parameters are applicable for communication through the DAP debug
interface.
Note: These parameters are not subject to production test but verified by design and/or
characterization.
Note: Operating Conditions apply.
Table 33 is valid under the following conditions: CL= 20 pF; voltage_range= upper
Table 33
DAP Interface Timing for Upper Voltage Range
Parameter
Symbol
DAP0 clock period1)
DAP0 high time
1)
DAP0 low time
DAP0 clock rise time
DAP0 clock fall time
DAP1 setup to DAP0
rising edge
t11 SR
t12 SR
t13 SR
t14 SR
t15 SR
t16 SR
Values
Unit
Min.
Typ.
Max.
25
−
−
ns
8
−
−
ns
8
−
−
ns
−
−
4
ns
−
−
4
ns
6
−
−
ns
DAP1 hold after DAP0
rising edge
t17 SR
6
−
−
ns
DAP1 valid per DAP0
clock period2)
t19 CC
17
20
−
ns
Note /
Test Condition
1) See the DAP chapter for clock rate restrictions in the Active::IDLE protocol state.
2) The Host has to find a suitable sampling point by analyzing the sync telegram response.
Table 34 is valid under the following conditions: CL= 20 pF; voltage_range= lower
Data Sheet
97
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 34
DAP Interface Timing for Lower Voltage Range
Parameter
Symbol
DAP0 clock period1)
t11 SR
t12 SR
t13 SR
t14 SR
t15 SR
t16 SR
DAP0 high time
1)
DAP0 low time
DAP0 clock rise time
DAP0 clock fall time
DAP1 setup to DAP0
rising edge
Values
Unit
Min.
Typ.
Max.
25
−
−
ns
8
−
−
ns
8
−
−
ns
−
−
4
ns
−
−
4
ns
6
−
−
ns
DAP1 hold after DAP0
rising edge
t17 SR
6
−
−
ns
DAP1 valid per DAP0
clock period2)
t19 CC
12
17
−
ns
Note /
Test Condition
1) See the DAP chapter for clock rate restrictions in the Active::IDLE protocol state.
2) The Host has to find a suitable sampling point by analyzing the sync telegram response.
t11
0.9 VD D P
0.5 VD D P
t1 2
t1 5
t1 3
t14
0.1 VD D P
MC_DAP0
Figure 23
Data Sheet
Test Clock Timing (DAP0)
98
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
DAP0
t1 6
t1 7
DAP1
MC_ DAP1_RX
Figure 24
DAP Timing Host to Device
t1 1
DAP1
t1 9
MC_ DAP1_TX
Figure 25
DAP Timing Device to Host
Note: The transmission timing is determined by the receiving debugger by evaluating the
sync-request synchronization pattern telegram.
Debug via JTAG
The following parameters are applicable for communication through the JTAG debug
interface. The JTAG module is fully compliant with IEEE1149.1-2000.
Note: These parameters are not subject to production test but verified by design and/or
characterization.
Note: Operating Conditions apply.
Table 35 is valid under the following conditions: CL= 20 pF; voltage_range= upper
Table 35
JTAG Interface Timing for Upper Voltage Range
Parameter
TCK clock period
TCK high time
Data Sheet
Symbol
t1 SR
t2 SR
Values
Unit
Min.
Typ.
Max.
50
−
−
ns
16
−
−
ns
99
Note /
Test Condition
1)
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 35
JTAG Interface Timing for Upper Voltage Range (cont’d)
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
16
−
−
ns
−
−
8
ns
−
−
8
ns
6
−
−
ns
t7 SR
6
−
−
ns
TDO valid from TCK falling t8 CC
edge (propagation delay)2)
−
25
29
ns
TDO high impedance to
valid output from TCK
falling edge3)2)
t9 CC
−
25
29
ns
TDO valid output to high
impedance from TCK
falling edge2)
t10 CC
−
25
29
ns
TDO hold after TCK falling t18 CC
edge2)
5
−
−
ns
TCK low time
TCK clock rise time
TCK clock fall time
TDI/TMS setup to TCK
rising edge
TDI/TMS hold after TCK
rising edge
t3 SR
t4 SR
t5 SR
t6 SR
Note /
Test Condition
1) Under typical conditions, the JTAG interface can operate at transfer rates up to 20 MHz.
2) The falling edge on TCK is used to generate the TDO timing.
3) The setup time for TDO is given implicitly by the TCK cycle time.
Table 36 is valid under the following conditions: CL= 20 pF; voltage_range= lower
Table 36
JTAG Interface Timing for Lower Voltage Range
Parameter
Symbol
TCK clock period
t1 SR
t2 SR
t3 SR
t4 SR
t5 SR
t6 SR
TCK high time
TCK low time
TCK clock rise time
TCK clock fall time
TDI/TMS setup to TCK
rising edge
Data Sheet
Values
Unit
Min.
Typ.
Max.
50
−
−
ns
16
−
−
ns
16
−
−
ns
−
−
8
ns
−
−
8
ns
6
−
−
ns
100
Note /
Test Condition
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
Table 36
JTAG Interface Timing for Lower Voltage Range (cont’d)
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
t7 SR
6
−
−
ns
TDO valid from TCK falling t8 CC
edge (propagation delay)1)
−
32
36
ns
TDO high impedance to
valid output from TCK
falling edge2)1)
t9 CC
−
32
36
ns
TDO valid output to high
impedance from TCK
falling edge1)
t10 CC
−
32
36
ns
TDO hold after TCK falling t18 CC
edge1)
5
−
−
ns
TDI/TMS hold after TCK
rising edge
Note /
Test Condition
1) The falling edge on TCK is used to generate the TDO timing.
2) The setup time for TDO is given implicitly by the TCK cycle time.
t1
0.9 VD D P
0.5 VD D P
t2
t5
t3
t4
0.1 VD D P
MC_ JTAG_ TCK
Figure 26
Data Sheet
Test Clock Timing (TCK)
101
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Electrical Parameters
TCK
t6
t7
t6
t7
TMS
TDI
t9
t8
t1 0
TDO
t18
Figure 27
Data Sheet
MC_JTAG
JTAG Timing
102
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Package and Reliability
5
Package and Reliability
The XE166 Family devices use the package type PG-LQFP (Plastic Green - Low Profile
Quad Flat Package). The following specifications must be regarded to ensure proper
integration of the XE162xN in its target environment.
5.1
Packaging
These parameters specify the packaging rather than the silicon.
Table 37
Package Parameters (PG-LQFP-64-6)
Parameter
Symbol
Limit Values
Min.
Unit Notes
Max.
Exposed Pad Dimension
Ex × Ey –
5.6 × 5.6
mm
–
Power Dissipation
PDISS
RΘJA
–
0.8
W
–
–
40
K/W No thermal via1)
37
K/W 4-layer, no pad2)
25
K/W 4-layer, pad3)
Thermal resistance
Junction-Ambient
1) Device mounted on a 4-layer board without thermal vias; exposed pad not soldered.
2) Device mounted on a 4-layer JEDEC board (according to JESD 51-7) with thermal vias; exposed pad not
soldered.
3) Device mounted on a 4-layer JEDEC board (according to JESD 51-7) with thermal vias; exposed pad soldered
to the board.
Note: To improve the EMC behavior, it is recommended to connect the exposed pad to
the board ground, independent of the thermal requirements.
Board layout examples are given in an application note.
Package Compatibility Considerations
The XE162xN is a member of the XE166 Family of microcontrollers. It is also compatible
to a certain extent with members of similar families or subfamilies.
Each package is optimized for the device it houses. Therefore, there may be slight
differences between packages of the same pin-count but for different device types. In
particular, the size of the Exposed Pad (if present) may vary.
If different device types are considered or planned for an application, it must be ensured
that the board layout fits all packages under consideration.
Data Sheet
103
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Package and Reliability
H
0.5
0.08 C 64x
C
SEATING COPLANARITY
PLANE
7.5
+0.07
0.2 -0.03
0.6 ±0.15
0.08 M A-B D C 64x
12
10
Bottom View
0.2 A-B D 64x
1)
Ex
0.2 A-B D H 4x
Ox
D
Exposed Diepad
Oy
Ey
10
B
12
A
1)
0.5 x 45˚
0˚...7˚
-0.06
0.15 +0.05
1.6 MAX.
1.4 ±0.05
0.1±0.05
STAND OFF
Package Outlines
64
1
1
64
Index Marking
Index Marking
1) Does not include plastic or metal protrusion of 0.25 max. per side
PG-LQFP-64-6, -8, -12-PO V13
Figure 28
PG-LQFP-64-6 (Plastic Green Thin Quad Flat Package)
All dimensions in mm.
You can find complete information about Infineon packages, packing and marking in our
Infineon Internet Page “Packages”: http://www.infineon.com/packages
Data Sheet
104
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Package and Reliability
5.2
Thermal Considerations
When operating the XE162xN in a system, the total heat generated in the chip must be
dissipated to the ambient environment to prevent overheating and the resulting thermal
damage.
The maximum heat that can be dissipated depends on the package and its integration
into the target board. The “Thermal resistance RΘJA” quantifies these parameters. The
power dissipation must be limited so that the average junction temperature does not
exceed 150 °C.
The difference between junction temperature and ambient temperature is determined by
ΔT = (PINT + PIOSTAT + PIODYN) × RΘJA
The internal power consumption is defined as
PINT = VDDP × IDDP (switching current and leakage current).
The static external power consumption caused by the output drivers is defined as
PIOSTAT = Σ((VDDP-VOH) × IOH) + Σ(VOL × IOL)
The dynamic external power consumption caused by the output drivers (PIODYN) depends
on the capacitive load connected to the respective pins and their switching frequencies.
If the total power dissipation for a given system configuration exceeds the defined limit,
countermeasures must be taken to ensure proper system operation:
•
•
•
•
Reduce VDDP, if possible in the system
Reduce the system frequency
Reduce the number of output pins
Reduce the load on active output drivers
Data Sheet
105
V1.5, 2013-02
XE162FN, XE162HN
XE166 Family / Value Line
Package and Reliability
5.3
Quality Declarations
The operation lifetime of the XE162xN depends on the operating temperature. The life
time decreases with increasing temperature as shown in Table 39.
Table 38
Quality Parameters
Parameter
Symbol
Operation lifetime
tOP CC
VHBM
Table 39
Unit
Note /
Test Condition
Min.
Typ.
Max.
−
−
20
a
See Table 39
−
−
2 000
V
EIA/JESD22A114-B
MSL CC −
−
3
−
JEDEC
J-STD-020C
ESD susceptibility
according to Human Body SR
Model (HBM)
Moisture sensitivity level
Values
Lifetime dependency from Temperature
Operating Time
Operating Temperature
20 a
TJ ≤ 110°C
TJ = 120°C
TJ = 125°C
TJ = 130°C
TJ = 140°C
TJ = 150°C
95 500 h
68 500 h
49 500 h
26 400 h
14 500 h
Data Sheet
106
V1.5, 2013-02
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG