Technical Data Sheet
Opto Interrupter
EAITRBA6
Features
․Fast response time
․High analytic
․High sensitivity
․Cut-off visible wavelength λP=940nm
․Pb Free
․This product itself will remain within RoHS compliant version.
Description
The EAITRBA6 consist of an infrared emitting diode and an NPN silicon phototransistor, encased
side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives
radiation from the IR only . This is the normal situation. But when an reflecting object close to ITR ,
phototransistor receives the reflecting radiation .For additional component information, please refer to
IR234C/L110 and PT234-6B.
Applications
․Mouse Copier
․Switch Scanner
․Floppy disk driver
․Non-contact Switching
․For Direct Board
1
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
DATASHEET
EAITRBA6
Device Selection Guide
Device No.
Chip Material
LENS COLOR
IR
GaAlAs
Water Clear
PT
Silicon
Black
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Ratings
Unit
Power Dissipation at(or below) 25℃Free
Air Temperature
Pd
75
mW
Reverse Voltage
VR
5
V
Forward Current
IF
50
mA
Peak Forward Current (*1) Pulse width
≦100μs, Duty cycle=1%
IFP
1
A
Collector Power Dissipation
PC
75
mW
Collector Current
IC
20
mA
Collector-Emitter Voltage
B VCEO
30
V
Emitter-Collector Voltage
B VECO
5
V
Operating Temperature
Topr
-25~+85
℃
Storage Temperature
Lead Soldering Temperature (*2) (1/16 inch form
body for 5 seconds)
Tstg
-40~+85
℃
Tsol
260
℃
Input
Output
Notes: (*1)
2
tw=100 μsec. ,
T=10 msec.
(*2)
t=5 Sec
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
DATASHEET
EAITRBA6
Electro-Optical Characteristics (Ta=25℃)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
VF1
-
1.2
1.5
V
IF=20mA
IF=100mA,tp=100μs,tp/T=0.0
1
IF=1A,tp=100μs,tp/T=0.01
VF2
-
1.4
1.8
VF3
-
2.6
4.0
Reverse Current
IR
-
-
10
μA
VR=5V
Peak Wavelength
View Angle
λP
2θ1/2
-
940
35
-
nm
Deg
IF=20mA
IF=20mA
Dark Current
ICEO
-
-
100
nA
VCE=5V,Ee=0mW/cm2
VCE(sat)
-
-
0.4
V
IC=0.04mA, IF=40mA
IC(ON)
20
-
110
μA
VCE=3V,IF=35mA
Rise Time
tR
-
15
-
μs
Fall Time
tF
-
15
-
μs
VCE=5V,IC=100μA
,RL=100Ω
Forward Voltage
Input
Output
C-E Saturation
Voltage
Collector Current(*3)
Response
Time
3
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
DATASHEET
EAITRBA6
Typical Electrical/Optical/Characteristics Curves for IR
Forward Current vs. Ambient Temperature
Spectral Distribution
Peak Emission Wavelenght vs. Ambient Temperature
Forward Current vs. Forward Voltage
4
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
DATASHEET
EAITRBA6
Relative Intensity vs. Forward Current
Relative Radiant Intensity
Typical Electro/Optical/Characteristics Curves for PT
Collector Power Dissipation vs. Ambient
Temperature
5
Collector Dark Current vs. Ambient Temperature
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
DATASHEET
EAITRBA6
Relative Collector Current vs. Ambient Temperature
Collector Current vs. Irradiance
Spectral Sensitivity
Collector Current vs. Collector-emitter Voltage
6
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
DATASHEET
EAITRBA6
Reliability Test Item And Condition
The reliability of products shall be satisfied with items listed below.
Confidence level:90%
LTPD:10%
Item
Test Condition
Test
Hours/
Cycle
Sample
Size
10 sec
22 PCs
0/1
300
cycle
22 PCs Ic(on)≦L×0.8
0/1
300
cycle
22 PCs
TEMP. : +100℃
1000 hrs
22 PCs
0/1
TEMP. : -40℃
1000 hrs
22 PCs
0/1
1000
hrs
22 PCs
0/1
1000 hrs
22 PCs
0/1
NO.
1
Solder Heat
TEMP : 260℃ ± 5 ℃
H : +100℃
2
L : -40℃
H : +100℃
3
15 min
5 min
10 sec
Thermal Shock
L : -10℃
4
5
6
7
7
High Temperature
Storage
Low Temperature
Storage
VCE=5V
IF=20mA
High Temperature / 85℃ / 85% R.H.
High Humidity
DC Operating Life
Ac/Re
15 mins
5 min
Temperature Cycle
Failure
Judgement
Criteria
5 min
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
L :Lower
specification
limit
0/1
www.everlightamericas.com
DATASHEET
EAITRBA6
Package Dimension
8
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
DATASHEET
EAITRBA6
Packing Quantity Specification
1.100PCS/1Bag, 5Bag/1Box
2. 10Boxes/1Carton
Label Form Specification
‧CPN: Customer’s Product Number
‧P/N: Product Number
‧QTY: Packing Quantity
‧CAT: Luminous Intensity Rank
‧HUE: Dom. Wavelength Rank
‧REF: Forward Voltage Rank
‧LOT No: Lot Number
‧X: Month
‧Reference: Identify Label Number
Notes
1. Above specification may be changed without notice. EVERLIGHT Americas will reserve authority on
material change for above specification.
2. When using this product, please observe the absolute maximum ratings and the instructions
for using outlined in these specification sheets. EVERLIGHT Americas assumes no responsibility for
any damage resulting from use of the product which does not comply with the absolute
maximum ratings and the instructions included in these specification sheets.
3. These specification sheets include materials protected under copyright of EVERLIGHT Americas
corporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT Americas
consent.
9
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
很抱歉,暂时无法提供与“EAITRBA6”相匹配的价格&库存,您可以联系我们找货
免费人工找货