EAITRCA8

EAITRCA8 Features ․Fast response time ․High sensitivity ․Cut-Off visible wavelength ․Thin ․Compact ․Pb free Description ․EAITRCA8 is a light reflection switch which includes a GaAs IR-LED transmitter and a NPN photo-transistor with a high photosensitive receiver for short distance, operating in the infrared range. Both components are mounted sideby- side in a plastic package. Applications ․Camera ․VCR ․Floppy disk driver ․Cassette type recorder ․Various microcomputer control equipment 1 Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx www.everlightamericas.com DATASHEET EAITRCA8 Device Selection Guide Device No. Chip Material IR GaAlAs PT Silicon Absolute Maximum Ratings (Ta=25℃) Parameter Input Output Symbol Ratings Unit Power Dissipation at(or below) 25℃Free Air Temperature Pd 75 mW Reverse Voltage VR 6 V Forward Current IF 50 mA Peak Forward Current (*1) Pulse width ≦100μs, Duty cycle=1% IFP 1 A Collector Power Dissipation PC 100 mW Collector Current IC 20 mA Collector-Emitter Voltage B VCEO 35 V Emitter-Collector Voltage B VECO Topr 6 V -25~+85 ℃ Tstg -30~+90 ℃ Tsol 260 ℃ Operating Temperature Storage Temperature Lead Soldering Temperature (*2) (1/16 inch form body for 5 seconds) Notes: (＊1) 2 tw=100 μsec. , T=10 msec. (＊2) t=10 Sec Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx www.everlightamericas.com DATASHEET EAITRCA8 Electro-Optical Characteristics (Ta=25℃) Parameter Input Output Min. Typ. Max. Unit Conditions Forward Voltage VF --- 1.2 1.4 V IF=20mA Reverse Current IR --- --- 10 μA VR=6V Peak Wavelength λP --- 940 --- nm IF=10mA ICEO --- --- 100 nA VCE=10V Collect Current IC(ON) 0.5 --- 15.0 mA VCE=2V, IF=4mA Leakage Current ICEOD --- --- 5 μ A VCE=2V, IF=4mA tr - - 400 μ s tf - - 400 μ s VCE=2V IC=10mA RL=100, d=1mm Dark C urrent Transfer Characteristics Rise time Fall time 3 Symbol Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx www.everlightamericas.com DATASHEET EAITRCA8 Typical Electrical/Optical/Characteristics Curves for ITR Relative Collector Current vs. Distance Between Sensor and Al Evaporationt Relative Collector Current vs. Card moving Distance d(mm) 4 Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx www.everlightamericas.com DATASHEET EAITRCA8 Response Time vs. Load Resistance 5 Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx www.everlightamericas.com DATASHEET EAITRCA8 Recommended Method of Storage The following are general recommendations for moisture sensitive level (MSL) 4 storage and use:  Shelf life in sealed bag: 12 months at < 40 °C and < 90% relative humidity (RH)  After bag is opened, devices that will be subjected to reflow solder or other high temperature process must a) Mounted within 72 hours of factory conditions < 30 °C/60%RH, or b) Stored at 20% when read at 23 ± 5 °C  If baking is required, devices may be baked: a) 192 hours at 40℃,and