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EL357NB

EL357NB

  • 厂商:

    EVERLIGHT(台湾亿光)

  • 封装:

    SOP4_4.4X4.1MM

  • 描述:

    光电耦合器 Viso=3.75KVrms Vr=6V If=50mA Pd=70mW Cin=30pF SOP4_4.4X4.1MM

  • 详情介绍
  • 数据手册
  • 价格&库存
EL357NB 数据手册
4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G Series Features: • Halogens free • Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) • High isolation voltage between input and output (Viso=3750 V rms ) • Compact 4 Pin SOP with a 2.0 mm profile • Pb free and RoHS compliant. • UL approved (No. E214129) • VDE approved (No. 132249) • SEMKO approved • NEMKO approved • DEMKO approved • FIMKO approved • CSA approved (No. 1408633) Schematic Description The EL357N-G series contains an infrared emitting diode, optically coupled to a phototransistor detector. The devices in a 4-pin small outline SMD package. Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector Applications • DC-DC Converters • Programmable controllers • Telecommunication equipments • Signal transmission between circuits of different potentials and impedances Everlight Electronics Co., Ltd. Document No:DPC-0000014 1 Rev. 2 http://www.everlight.com January 21, 2009 4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G Series Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Rating Unit Forward current IF 50 mA Peak forward current (1us, pulse) IFP 1 A Reverse voltage VR 6 V 70 mW 2.9 mW/°C 150 mW 3.7 mW/°C IC 80 mA Collector-Emitter voltage VCEO 80 V Emitter-Collector voltage VECO 7 V Total power dissipation PTOT 200 mW Isolation voltage *1 VISO 3750 V rms Operating temperature TOPR -55 ~ +110 °C Storage temperature TSTG -55 ~ +125 °C Soldering temperature *2 TSOL 260 °C Input Power dissipation PD Derating factor (about Ta=100°C) Power dissipation PC Derating factor (about Ta=80°C) Output Collector current Notes *1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1 & 2 are shorted together, and pins 3 & 4 are shorted together. *2 For 10 seconds. Everlight Electronics Co., Ltd. Document No:DPC-0000014 2 Rev. 2 http://www.everlight.com January 21, 2009 EL357N-G Series 4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER Electrical Characteristics (Ta=25°C unless specified otherwise) Input Parameter Symbol Min. Typ.* Max. Unit Condition Forward voltage VF - 1.2 1.4 V IF = 20mA Reverse current IR - - 10 µA VR = 4V Input capacitance Cin - 30 250 pF V = 0, f = 1kHz Symbol Min. Typ.* Max. Unit ICEO - - 100 nA VCE = 20V, IF = 0mA Collector-Emitter breakdown voltage BVCEO 80 - - V IC = 0.1mA Emitter-Collector breakdown voltage BVECO 7 - - V IE = 0.01mA Output Parameter Collector-Emitter dark current Condition Transfer Characteristics (Ta=25°C unless specified otherwise) Parameter Min. Typ.* Max. EL357N 50 - 600 EL357NA 80 - 160 EL357NB 130 - 260 200 - 400 EL357ND 300 - 600 EL357NE 100 - 200 EL357NF 150 - 300 VCE(sat) - 0.1 Isolation resistance RIO 5×1010 Floating capacitance CIO Cut-off frequency Current Transfer ratio Symbol CTR Unit Condition % IF = 5mA ,VCE = 5V 0.2 V IF = 20mA ,IC = 1mA - - Ω VIO = 500Vdc, 40~60% R.H. - 0.6 1.0 pF VIO = 0, f = 1MHz fc - 80 - kHz VCE = 5V, IC = 2mA RL = 100Ω, -3dB Rise time tr - 3 18 µs Fall time tf - 4 18 µs EL357NC Collector-Emitter saturation voltage VCE = 2V, IC = 2mA, RL = 100Ω * Typical values at Ta = 25°C Everlight Electronics Co., Ltd. Document No:DPC-0000014 3 Rev. 2 http://www.everlight.com January 21, 2009 4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G Series Typical Performance Curves Everlight Electronics Co., Ltd. Document No:DPC-0000014 4 Rev. 2 http://www.everlight.com January 21, 2009 4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G Series VCC IF IC Input Pulse RL Output Input Output Pulse RIN tr ton 10% 90% tf toff Figure 10. Switching Time Test Circuit & Waveforms Everlight Electronics Co., Ltd. Document No:DPC-0000014 5 Rev. 2 http://www.everlight.com January 21, 2009 4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G Series Order Information Part Number EL357NX(Y)-VG Note 357N X Y V G = Part No. = CTR Rank (A, B, C, D, E, For none) = Tape and reel option (TA, TB or none). = VDE (optional) = Halogen free Option Description Packing quantity None Standard SMD option 100 units per tube -V Standard SMD option + VDE 100 units per tube (TA) TA Tape & reel option 3000 units per reel (TB) TB Tape & reel option 3000 units per reel (TA)-V TA Tape & reel option + VDE 3000 units per reel (TB)-V TB Tape & reel option + VDE 3000 units per reel Everlight Electronics Co., Ltd. Document No:DPC-0000014 6 Rev. 2 http://www.everlight.com January 21, 2009 4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G Series Package Drawing (Dimensions in mm) Recommended pad layout for surface mount leadform Everlight Electronics Co., Ltd. Document No:DPC-0000014 7 Rev. 2 http://www.everlight.com January 21, 2009 4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G Series Device Marking EL 357N RYWWV Notes EL 357N R Y WW V denotes Everlight denotes Device Number denotes CTR Rank (A, B, C, D, E, F or none) denotes 1 digit Year code denotes 2 digit Week code denotes VDE (optional) Everlight Electronics Co., Ltd. Document No:DPC-0000014 8 Rev. 2 http://www.everlight.com January 21, 2009 EL357N-G Series 4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER Tape & Reel Packing Specifications Option TA Option TB Direction of feed from reel Direction of feed from reel Tape dimensions Dimension No. Dimension (mm) A B Do D1 E F 4.4 ± 0.1 7.4 ± 0.1 1.5 + 0.1/-0 1.5 ± 0.1 1.7 5± 0.1 7.5 ± 0.1 Po P1 P2 t W K 4.0 ± 0.15 8.0 ± 0.1 2.0 ± 0.1 0.25 ± 0.03 16.0 ± 0.2 2.4 ± 0.1 Dimension No. Dimension (mm) Everlight Electronics Co., Ltd. Document No:DPC-0000014 9 Rev. 2 http://www.everlight.com January 21, 2009 4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G Series Solder Reflow Temperature Profile 260 °C (peak) >255 °C (30s Max) 217°C 1-3 °C/Sec Max 200°C 60 – 140 Sec 150°C 70 – 170 Sec 1-3 °C/Sec Max TIME (S) Everlight Electronics Co., Ltd. Document No:DPC-0000014 10 Rev. 2 http://www.everlight.com January 21, 2009 4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G Series DISCLAIMER 1. The specifications in this datasheet may be changed without notice. EVERLIGHT reserves the authority on material change for above specification. 2. When using this product, please observe the absolute maximum ratings and the instructions for use as outlined in this datasheet. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in this datasheet. 3. These specification sheets include materials protected under copyright of EVERLIGHT. Reproduction in any form is prohibited without the specific consent of EVERLIGHT. Everlight Electronics Co., Ltd. Document No:DPC-0000014 11 Rev. 2 http://www.everlight.com January 21, 2009
EL357NB
1. 物料型号:EL357N-G系列 2. 器件简介:包含一个红外发射二极管和与光晶体管检测器光耦合的光继电器。 3. 引脚分配:1.阳极 2.阴极 3.发射极 4.集电极。 4. 参数特性: - 无卤素 - 电流传输比(CTR: 在IF=5mA, VCE=5V时为50~600%) - 高隔离电压(输入和输出之间为3750Vrms) - 紧凑的4引脚SOP封装,高度为2.0mm - 无铅和RoHS合规 - UL认证(编号E214129) - VDE认证(编号132249) - 工作温度范围:-55°C至+110°C - 存储温度范围:-55°C至+125°C - 焊接温度:260°C(10秒) 5. 功能详解: - 用于DC-DC转换器、可编程控制器、电信设备和不同电位及阻抗电路间的信号传输。 6. 应用信息:如上所述。 7. 封装信息:4引脚超小型SOP封装,提供详细的引脚布局和推荐焊盘布局。
EL357NB 价格&库存

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EL357NB
    •  国内价格
    • 10+0.41354
    • 100+0.33102
    • 300+0.28858
    • 3000+0.23876
    • 6000+0.22716
    • 9000+0.21936

    库存:87692

    EL357NB
      •  国内价格
      • 1+0.37290

      库存:12

      EL357NB
      •  国内价格
      • 5+0.28003
      • 20+0.27489
      • 100+0.26461

      库存:835