IR928-6C(6-1)

EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DIR-092-107 IR928-6C ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936(22Lines) FAX: 886-2-2267-6189 http: //www.everlight.com 1.2 1/8 EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DIR-092-107 IR928-6C ECN: REV: Page: 1.2 2/8 ◎Notes： ： 1.All dimensions are in millimeter. 2.General tolerance ：± 0.1mm 3.Lead spacing is measured where the lead emerge from the package. 4.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 5.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent. 6.When using this product , please observe the absolute maximum ratings and the instructions for use outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. Description The IR928-6C is a GaAs(GaAlAs) infrared emitting diode. The miniature side-facing device has a chip that emits radiation from the side of the clear package. Features • Low forward voltage • Peak wavelength λp=940nm • High reliability Applications • Mouse • Optoelectronic switch • Photo interrupter EVERLIGHT ELECTRONICS CO., LTD. Device Number: DIR-092-107 IR928-6C ECN: MODEL NO: REV: Page: Absolute Maximum Ratings 1.2 3/8 (Ta=25℃) Item Power Dissipation Reverse Voltage Forward Current Peak Forward Current(*1) Operating Temperature Storage Temperature Soldering Temperature Symbol PD VR IF IFP Topr Tstg Tsol Rating 75 5 50 1 -25~+85 -40~+85 260 Unit mW V mA A ℃ ℃ ℃ (1/16 inch from body for 5 seconds) (＊1) . tw=100 μSEC , Electro-Optical Characteristics Parameter Symbol Collector Current IC(ON) Peak Wavelength Spectral Bandwidth View Angle Forward Voltage Reverse Current λp △λ 2θ1/2 VF IR Min 280 300 ----------- T=10 m SEC Typ ----940 50 40 1.2 --- . Max 1000 1300 ------1.6 10 Unit μA μA nm nm Deg V μA (Ta=25℃) Condition IF=4mA,VCE=3.5V =20mA IF =20mA IF =20mA IF =20mA VR=5V IF EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DIR-092-107 IR928-6C ECN: Typical Characteristics REV: Page: 1.2 4/8 EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DIR-092-107 IR928-6C ECN: REV: Page: 1.2 5/8 Test Method Standard PTR I (ON)= I (ON) A+I (ON) B 2 Ratio= I (ON) A/I (ON) B =1.0 Ranks Color Code Parameter Symbol Min Max Unit Test Condition Blue 7-2 IC(ON) 300 450 IF=4mA,VCE=3.5V Yellow 7-1 IC(ON) 340 520 Silver 6-2 IC(ON) 490 750 Green 6-1 IC(ON) 650 1300 μA μA μA μA R 0.8 1.2 --- Ic(ON)A / Ic(ON)B Collector Current Ratio of 2 Photo Transistors * IC(ON)=[ IC(ON)A+ IC(ON)B]/2 IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V EVERLIGHT ELECTRONICS CO., LTD. Device Number: DIR-092-107 IR928-6C ECN: MODEL NO: REV: Page: 1.2 6/8 E Ranks Color Code Parameter Symbol Min Max Unit Test Condition Red E1 IC(ON) 280 420 IF=4mA,VCE=3.5V Blue E2 IC(ON) 340 480 Yellow E3 IC(ON) 400 540 Silver E4 IC(ON) 460 600 Green E5 IC(ON) 520 660 Purple E6 IC(ON) 580 720 White E7 IC(ON) 640 780 Brown E8 IC(ON) 700 880 Orange E9 IC(ON) 800 1000 μA μA μA μA μA μA μA μA μA R 0.8 1.2 --- Ic(ON)A / Ic(ON)B Collector Current Ratio of 2 Photo Transistors IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V * IC(ON)=[ IC(ON)A+ IC(ON)B]/2 *For the intensity test method, the output intensity is measured indirectly by measuring the emitter current of a “standard phototransistor”. The parts are 6mm apart (lead center to lead center), the test condition is IF=4mA,VCE=3.5V. The calibration standard for PTR sensitivity is 532μA when irradiated with a 0.555mW/cm2 light source. When exposed to the uniform light, Collector Current Ratio of 2 Photo transistors must be 1.0 almost. Maximum and minimum values must include all variations due to mechanical electrical sorting and measurement error. Supplement 1.Parts (1) Chip Type IR Material Peak Wavelength GaAs or GaAlAs 940nm (2) Material Type Material Lead frame SPCC Wire Gold Package Epoxy EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DIR-090-107 IR928-6C ECN: REV: Page: 1.2 7/8 Reliability The reliability of products shall be satisfied with items listed below. Confidence level ：90％ LTPD：10％ Test Items Test Conditions Failure Judgement Criteria Operating life test VCE=5V, IF=20mA Ta：25℃ 1000hrs Temperature cycle 1cycle –55℃to+25℃to +85℃ (30min) (5min) (30min) 50 cycle test -55℃ to + 85℃ Thermal shock (5min) (10 sec) (5min) 50cycle test High temperature Temp：+100℃ 1000hrs storage Low temperature Temp：-55℃ 1000hrs storage High temperature Ta：85℃ RH：85％ 1000hrs High humidity Temp：260 ± 5℃ 10 sec Solder heat Solderability Temp：230 ± 5℃ 3 sec 4mm from the bottom of the package. Samples(n) Defect (c) n =22，c=0 Ic(on)≦L x 0.8 VF≧U x 1.2 IR≧U x 2 n =22，c=0 n =22，c=0 L：Lower specification limit U：Upper specification limit n =22，c=0 n =22，c=0 n =22，c=0 n =22，c=0 More than 90% of lead to be covered by soldering n =22，c=0 EVERLIGHT ELECTRONICS CO., LTD. Device Number: DIR-092-107 IR928-6C ECN: MODEL NO: REV: Page: 1.2 8/8 Packing Specifications 4.5 3.5 Label 4.05.5 19± 0.5 1.Bag 15± 0.5 2.Box 15 22 3409281903 IR928-6C 9 EVERLIGHT Opto-electronic,Compoments Label E V E R L I G H T 33 24 3.Carton 48 Label UNIT：cm Packing Quantity Specification 1.1000Pcs/1bag，6bags/1box 2.10boxes/1Carton PT928-6CDATA CPN:Customer’s product number P/N: Product number QTY: Packing quantity CAT: Ranks HUE: Peak wavelength REF: Reference LOT NO: Lot number MADE IN TAIWAN: Production place