PT1504-6B

DATASHEET 5mm Phototransistor PT1504-6B Technical Data Sheet 5mm Phototransistor T-1 3/4 Features ․Fast response time ․High photo sensitivity ․Pb free ․This product itself will remain within RoHS compliant version. ․Copliance with EU REACH ․Compliance Halogen Free.（Br＜900 ppm，Cl＜900ppm，Br+Cl＜1500ppm） Descriptions ․PT1504-6B is a high speed and high sensitive NPN silicon NPN epitaxial planar phototransistor molded in a standard 5 mm package. Due to is black epoxy the device is sensitive to visible and near Infrared radiation. Applications ․Infrared applied system ․Camera ․Cockroach catcher Device Selection Guide 1 LED Part No. Chip Material Lens Color PT1504-6B Silicon Black Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec .09.2016. Issue No: DPT-0000290 _Rev.6 www.everlight.com DATASHEET 5mm Phototransistor PT1504-6B Package Dimensions 2 2 1 1 2 Emitter Collector 1 Notes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions ±0.25mm 2 Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec .09.2016. Issue No: DPT-0000290 _Rev.6 www.everlight.com DATASHEET 5mm Phototransistor PT1504-6B Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Rating Collector-Emitter Voltage VCEO 30 Units V Emitter-Collector-Voltage VECO 5 V IC mA Collector Current Operating Temperature Topr 20 -25 ~ +85℃ Storage Temperature Tstg -40 ~ +85℃ ℃ Lead Soldering Temperature(*1) Tsol 260 ℃ Power Dissipation at (or below) 25℃ Free Air Temperature Pc 75 mW ℃ Notes: *1:Soldering time≦5 seconds. Electro-Optical Characteristics (Ta=25℃) Parameter Collector – Emitter Breakdown Voltage 3 Symbol BVCEO Condition IC=100μA Ee=0mW/cm2 Min. Typ. Max. Units 30 --- --- V Emitter-Collector Breakdown Voltage IE=100μA BVECO Ee=0mW/cm2 5 --- --- V Collector-Emitter Saturation Voltage IC=2mA VCE)(sat) Ee=1mW/cm2 --- --- 0.4 V --- 15 --- --- 15 --- --- --- 100 nA 1.77 4.0 --- mA Rise Time tr Fall Time tf VCE=5V IC=1mA RL=1000Ω Ee=0mW/cm2 VCE=20V Ee=1mW/cm2 VCE=5V μS Collector Dark Current ICEO On State Collector Current IC(on) Wavelength of Peak Sensitivity λp --- --- 940 --- nm Rang of Spectral Bandwidth λ0.5 --- --- 760-1100 --- nm Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec .09.2016. Issue No: DPT-0000290 _Rev.6 www.everlight.com DATASHEET 5mm Phototransistor PT1504-6B Rankings Parameter Symbol Min Max Unit Test Condition Ic(on) 1.77 2.67 3.61 5.07 mA 4.18 7.07 VcE=5V Ee=1mW/cm² J K L Note: *Measurement Uncertainty of Forward Voltage: ±0.1V *Measurement Uncertainty of Luminous Intensity: ±10% *Measurement Uncertainty of Dominant Wavelength ±1.0nm 4 Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec .09.2016. Issue No: DPT-0000290 _Rev.6 www.everlight.com DATASHEET 5mm Phototransistor PT1504-6B Typical Electro-Optical Characteristics Curves Fig.1Collector Power Dissipation vs. Ambient Temperature 160 Fig.2 Spectral Sensitivity 1.0 Ta=25 C 2 140 0.8 120 0.6 100 80 Ambient Temperature 60 0.4 40 0.2 20 0 0 10 20 30 40 50 60 70 Fig.3 Relative Collector Current vs. Ambient Temperature 0 700 800 900 1000 1100 1300 Fig.4 Collector Current vs. Irradiance 100 100 C 80 10 60 1 40 0.1 20 0 -25 0 25 50 75 85 100 0.01 0.5 1 1.5 3 2 5 Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec .09.2016. Issue No: DPT-0000290 _Rev.6 www.everlight.com DATASHEET 5mm Phototransistor PT1504-6B Typical Electro-Optical Characteristics Curves Fig.5 Collector Dark Current vs. Ambient Temperature Fig.6 Collector Current vs. Collector-Emitter Voltage 10 14 12 10 10 8 10 6 4 10 2 10 0 6 25 50 75 100 0 0 1 2 Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec .09.2016. Issue No: DPT-0000290 _Rev.6 3 4 www.everlight.com DATASHEET 5mm Phototransistor PT1504-6B Label Form Specification CPN: Customer’s Production Number P/N : Production Number QTY: Packing Quantity CAT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number Packing Specification ■ Anti-electrostatic bag ■ Inner Carton ■ Outside Carton ■ Packing Quantity 1. MIN 200 To 500PCS/1 Bag, 5 Bags/1 Inner Carton 2. 10 Inner Cartons/1 Outside Carton Notes 7 Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec .09.2016. Issue No: DPT-0000290 _Rev.6 www.everlight.com DATASHEET 5mm Phototransistor PT1504-6B 1. Lead Forming  During lead formation, the leads should be bent at a point at least 3mm from the base of the epoxy bulb.  Lead forming should be done before soldering.  Avoid stressing the PHOTOTRANSISTOR package during leads forming. The stress to the base may damage the PHOTOTRANSISTOR’s characteristics or it may break the Phototransistor.  Cut the PHOTOTRANSISTOR lead frames at room temperature. Cutting the lead frames at high temperatures may cause failure of the Phototransistor.  When mounting the Phototransistor onto a PCB, the PCB holes must be aligned exactly with the lead position of the PHOTOTRANSISTOR. If the Phototransistor are mounted with stress at the leads, it causes deterioration of the epoxy resin and this will degrade the Phototransistor. 2. Storage  The Phototransistor should be stored at 30°C or less and 70%RH or less after being shipped from Everlight and the storage life limits are 3 months. If the Phototransistor are stored for 3 months or more, they can be stored for a year in a seaPhototransistor container with a nitrogen atmosphere and moisture absorbent material.  Please avoid rapid transitions in ambient temperature, especially, in high humidity environments where condensation can occur. 3. Soldering  Careful attention should be paid during soldering. When soldering, leave more then 3mm from solder joint to epoxy bulb, and soldering beyond the base of the tie bar is recommended.  Recommended soldering conditions: Hand Soldering  DIP Soldering Temp. at tip of iron 300℃ Max. (30W Max.) Preheat temp. 100℃ Max. (60 sec Max.) Soldering time 3 sec Max. Bath temp. & time 260 Max., 5 sec Max Distance 3mm Min.(From solder Distance 3mm Min. (From solder joint to epoxy bulb) Recommended soldering profile joint to epoxy bulb) laminar wave Fluxing Prehead 8 Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec .09.2016. Issue No: DPT-0000290 _Rev.6 www.everlight.com DATASHEET 5mm Phototransistor PT1504-6B  Avoiding applying any stress to the lead frame while the Phototransistor are at high temperature particularly when soldering.  Dip and hand soldering should not be done more than one time  After soldering the Phototransistor, the epoxy bulb should be protected from mechanical shock or vibration until the Phototransistor return to room temperature.  A rapid-rate process is not recommended for cooling the Phototransistor down from the peak temperature. Although the recommended soldering conditions are specified in the above table, dip or hand soldering at the lowest possible temperature is desirable for the Phototransistor.  Wave soldering parameter must be set and maintain according to recommended temperature and dwell time in the solder wave. 4. Cleaning  When necessary, cleaning should occur only with isopropyl alcohol at room temperature for a duration of no more than one minute. Dry at room temperature before use.  Do not clean the Phototransistor by the ultrasonic. When it is absolutely necessary, the influence of ultrasonic cleaning on the Phototransistor depends on factors such as ultrasonic power and the assembPhototransistor condition. Ultrasonic cleaning shall be pre-qualified to ensure this will not cause damage to the PHOTOTRANSISTOR 5. Heat Management  Heat management of Phototransistor must be taken into consideration during the design stage of PHOTOTRANSISTOR application. The current should be de-rated appropriately by referring to the de-rating curve found in each product specification.  The temperature surrounding the PHOTOTRANSISTOR in the application should be controlPhototransistor. Please refer to the data sheet de-rating curve. 6. ESD (Electrostatic Discharge)  Electrostatic discharge (ESD) or surge current (EOS) can damage Phototransistor.  An ESD wrist strap, ESD shoe strap or antistatic gloves must be worn whenever handling Phototransistor.  All devices, equipment and machinery must be properly grounded.  Use ion blower to neutralize the static charge which might have built up on surface of the Phototransistor plastic lens as a result of friction between Phototransistor during storage and handing. DISCLAIMER 9 1. EVERLIGHT reserves the right(s) on the adjustment of product material mix for the specification. 2. The product meets EVERLIGHT published specification for a period of twelve (12) months from Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec .09.2016. Issue No: DPT-0000290 _Rev.6 www.everlight.com DATASHEET 5mm Phototransistor PT1504-6B date of shipment. 3. The graphs shown in this datasheet are representing typical data only and do not show guaranteed values. 4. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from the use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. 5. These specification sheets include materials protected under copyright of EVERLIGHT. Reproduction in any form is prohibited without obtaining EVERLIGHT’s prior consent. 6. This product is not intended to be used for military, aircraft, automotive, medical, life sustaining or life saving applications or any other application which can result in human injury or death. Please contact authorized Everlight sales agent for special application request. 10 Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec .09.2016. Issue No: DPT-0000290 _Rev.6 www.everlight.com