XR2008ISO8EVB

XR1008, XR2008 0.5mA, 75MHz Rail-to-Rail Amplifiers General Description The XR1008 (single) and XR2008 (dual) are rail-to-rail output amplifiers that offer superior dynamic performance with 75MHz small signal bandwidth and 50V/μs slew rate. The XR1008 and XR2008 amplifiers consume only 505μA of supply current per channel and are designed to operate from a supply range of 2.5V to 5.5V (±1.25 to ±2.75). The combination of low power, high output current drive, and rail-to-rail performance make the XR1008 and XR2008 well suited for battery-powered metering and test equipment. The combination of low cost and high performance make these amplifiers suitable for high volume industrial applications such as ultrasonic heat meters, water meters and other applications requiring high speed and low power. FE ATURE S ■ 505μA supply current ■ 75MHz bandwidth ■ Input voltage range with 5V supply: -0.3V to 3.8V ■ Output voltage range with 5V supply: 0.07V to 4.86V ■ 50V/μs slew rate ■ 12nV/√Hz input voltage noise ■ 15mA linear output current ■ Fully specified at 2.7V and 5V supplies A P P LI CATION S ■ Portable/battery-powered applications ■ Mobile communications, cell phones, pagers ■ ADC buffer ■ Active filters ■ Portable test instruments ■ Signal conditioning ■ Medical equipment ■ Portable medical instrumentation ■ Flow meters Ordering Information - back page Frequency Response vs. Temperature Typical Application +2.7 Magnitude (1dB/div) 6.8μF + In + 0.1μF Out XR1008 RIN ROUT Rf Rg 0.01 0.1 1 10 100 Frequency (MHz) © 2014 Exar Corporation 1 / 17 exar.com/XR1008 Rev 1B XR1008, XR2008 Absolute Maximum Ratings Operating Conditions Stresses beyond the limits listed below may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Supply Voltage Range ...................................................2.5 to 5.5V Operating Temperature Range ...............................-40°C to 125°C Junction Temperature ........................................................... 150°C Storage Temperature Range...................................-65°C to 150°C Lead Temperature (Soldering, 10s) ......................................260°C VS ..................................................................................... 0V to 6V VIN ............................................................ -VS - 0.5V to +VS +0.5V Package Thermal Resistance Continuous Output Current ..................................-30mA to +30mA θJA (TSOT-5) .....................................................................215°C/W θJA (SOIC-8) .....................................................................150°C/W θJA (MSOP-8) .................................................................. 200°C/W Package thermal resistance (θJA), JEDEC standard, multi-layer test boards, still air. ESD Protection XR1008 (HBM) .........................................................................2kV XR2008 (HBM) ......................................................................2.5kV ESD Rating for HBM (Human Body Model). © 2014 Exar Corporation 2 / 17 exar.com/XR1008 Rev 1B XR1008, XR2008 Electrical Characteristics at +2.7V TA = 25°C, VS = +2.7V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted. Symbol Parameter Conditions Min Typ Max Units Frequency Domain Response UGBWSS Unity Gain -3dB Bandwidth G = +1, VOUT = 0.05Vpp, Rf = 0 65 MHz BWSS -3dB Bandwidth G = +2, VOUT < 0.2Vpp 30 MHz BWLS Large Signal Bandwidth G = +2, VOUT = 2Vpp 12 MHz GBWP Gain Bandwidth Product G = +11, VOUT = 0.2Vpp 28 MHz Time Domain Response tR, tF Rise and Fall Time VOUT = 0.2V step; (10% to 90%) 7.5 ns tS Settling Time to 0.1% VOUT = 1V step 60 ns OS Overshoot VOUT = 1V step 10 % SR Slew Rate G = -1, 2V step 40 V/μs Distortion/Noise Response HD2 2nd Harmonic Distortion 1MHz, VOUT = 1Vpp -67 dBc HD3 3rd Harmonic Distortion 1MHz, VOUT = 1Vpp -72 dBc THD Total Harmonic Distortion 1MHz, VOUT = 1Vpp 65 dB en Input Voltage Noise >10kHz 12 nV/√Hz DC Performance VIO Input Offset Voltage 0 mV dVIO Average Drift 10 μV/°C IB Input Bias Current 1.2 μA dIB Average Drift 3.5 nA/°C IOS Input Offset Current 30 nA PSRR Power Supply Rejection Ratio DC 66 dB AOL Open Loop Gain VOUT = VS / 2 98 dB IS Supply Current per channel 470 μA 60 Input Characteristics RIN Input Resistance CIN Input Capacitance CMIR Common Mode Input Range CMRR Common Mode Rejection Ratio Non-inverting 9 MΩ 1.5 pF -0.3 to 1.5 V 74 dB RL = 1kΩ to VS / 2 0.09 to 2.53 V RL = 10kΩ to VS / 2 0.05 to 2.6 V DC, VCM = 0V to VS - 1.5V Output Characteristics VOUT Output Voltage Swing IOUT Output Current ±15 mA ISC Short Circuit Current ±30 mA © 2014 Exar Corporation 3 / 17 exar.com/XR1008 Rev 1B XR1008, XR2008 Electrical Characteristics at +5V TA = 25°C, VS = +5V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted. Symbol Parameter Conditions Min Typ Max Units Frequency Domain Response UGBWSS Unity Gain -3dB Bandwidth G = +1, VOUT = 0.05Vpp, Rf = 0 75 MHz BWSS -3dB Bandwidth G = +2, VOUT < 0.2Vpp 35 MHz BWLS Large Signal Bandwidth G = +2, VOUT = 2Vpp 15 MHz GBWP Gain Bandwidth Product G = +11, VOUT = 0.2Vpp 33 MHz Time Domain Response tR, tF Rise and Fall Time VOUT = 0.2V step; (10% to 90%) 6 ns tS Settling Time to 0.1% VOUT = 1V step 60 ns OS Overshoot VOUT = 1V step 12 % SR Slew Rate G = -1, 2V step 50 V/μs Distortion/Noise Response HD2 2nd Harmonic Distortion 1MHz, VOUT = 2Vpp -64 dBc HD3 3rd Harmonic Distortion 1MHz, VOUT = 2Vpp -62 dBc THD Total Harmonic Distortion 1MHz, VOUT = 2Vpp 60 dB en Input Voltage Noise >10kHz 12 nV/√Hz DC Performance VIO Input Offset Voltage dVIO Average Drift IB Input Bias Current -5 -1 5 mV 10 -3.5 1.2 dIB Average Drift 3.5 IOS Input Offset Current 30 PSRR Power Supply Rejection Ratio DC 60 AOL Open Loop Gain VOUT = VS / 2 65 IS Supply Current per channel μV/°C 3.5 nA/°C 350 66 nA dB 80 505 μA dB 620 μA Input Characteristics RIN Input Resistance CIN Input Capacitance CMIR Common Mode Input Range CMRR Common Mode Rejection Ratio Non-inverting DC, VCM = 0V to VS - 1.5V 9 MΩ 1.5 pF -0.3 to 3.8 V 65 74 dB 0.2 to 4.65 0.13 to 4.73 V 0.08 to 4.84 V Output Characteristics RL = 1kΩ to VS / 2 VOUT Output Voltage Swing RL = 10kΩ to VS / 2 IOUT Output Current ±15 mA ISC Short Circuit Current ±30 mA © 2014 Exar Corporation 4 / 17 exar.com/XR1008 Rev 1B XR1008, XR2008 XR1008 Pin Configurations XR1008 Pin Assignments TSOT-5 TSOT-5 OUT 1 -Vs 2 +IN 3 +Vs 5 + -IN 4 SOIC-8 NC Pin Name Description 1 OUT Output 2 -VS Negative supply 3 +IN Positive input 4 -IN Negative input 5 +VS Positive supply SOIC-8 NC 8 1 -IN 2 - 7 +Vs +IN 3 + 6 OUT -Vs Pin No. NC 5 4 Pin No. Pin Name Description 1 NC No Connect 2 -IN Negative input 3 +IN Positive input 4 -VS Negative supply 5 NC No Connect 6 OUT Output 7 +VS Positive supply 8 NC No Connect XR2008 Pin Configuration XR2008 Pin Assignments SOIC-8 / MSOP-8 SOIC-8 / MSOP-8 OUT1 1 2 - +IN1 3 + -Vs 4 © 2014 Exar Corporation + Pin Name 1 OUT1 Description Output, channel 1 +Vs 2 -IN1 Negative input, channel 1 7 OUT2 3 +IN1 Positive input, channel 1 4 -VS 6 -IN2 5 +IN2 Positive input, channel 2 6 -IN2 Negative input, channel 2 7 OUT2 8 +VS 8 -IN1 Pin No. 5 +IN2 5 / 17 Negative supply Output, channel 2 Positive supply exar.com/XR1008 Rev 1B XR1008, XR2008 Typical Performance Characteristics TA = 25°C, VS = +5V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted. Inverting Frequency Response at VS = 5V Normalized Magnitude (1dB/div) Normalized Magnitude (1dB/div) Non-Inverting Frequency Response at VS = 5V G=1 Rf = 0 G=2 Rf = 1k1 G = 10 Rf = 1k1 G=5 Rf = 1k1 0.1 1 10 0.1 100 Frequency (MHz) Normalized Magnitude (1dB/div) Normalized Magnitude (2dB/div) G=2 Rf = 1k1 G = 10 Rf = 2k1 G=5 Rf = 1k1 10 G = -5 Rf = 1k1 G = -1 Rf = 1k1 1 10 0.1 100 Frequency (MHz) G = -1 Rf = 1k1 G = -2 Rf = 1k1 G = -10 Rf = 1k1 G = -5 Rf = 1k1 1 10 Frequency Response vs RL RL = 1k1 Magnitude (1dB/div) Magnitude (1dB/div) CL = 10pF Rs = 01 CL = 20pF Rs = 1001 CL = 50pF Rs = 1001 + - Rs CL 1k1 100 Frequency (MHz) Frequency Response vs CL CL = 100pF Rs = 1001 100 Inverting Frequency Response at VS = 2.7V G=1 Rf = 0 1 G = -10 Rf = 1k1 Frequency (MHz) Non-Inverting Frequency Response at VS = 2.7V 0.1 G = -2 Rf = 1k1 RL RL = 10k1 RL = 1001 1k1 0.1 1 10 100 0.1 Frequency (MHz) © 2014 Exar Corporation 1 10 100 Frequency (MHz) 6 / 17 exar.com/XR1008 Rev 1B XR1008, XR2008 Typical Performance Characteristics TA = 25°C, VS = +5V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted. Frequency Response vs. VOUT Open Loop Gain & Phase vs. Frequency 90 Open Loop Gain (dB) 80 Vo = 2Vpp Vo = 4Vpp Gain 70 60 50 40 Phase 30 0 20 -45 10 -90 0 -135 -10 0.1 1 10 100 100 1k 10k Frequency (MHz) 1M 10M -180 100M 3rd Harmonic Distortion vs VOUT -20 -20 -30 -30 -40 -40 Distortion (dB) Distortion (dBc) 100k Frequency (Hz) 2nd Harmonic Distortion vs VOUT -50 -60 1MHz -70 500kHz -80 -50 -60 500kHz -70 1MHz 100kHz -80 100kHz -90 -90 0.5 1 1.5 2 0.5 2.5 Output Amplitude (Vpp) -20 1.0 1.5 2.0 2.5 Output Amplitude (Vpp) 2nd & 3rd Harmonic Distortion at VS = 2.7V Frequency Response vs. Temperature Vo = 1Vpp 3rd RL = 1501 -40 3rd RL = 1k1 Magnitude (1dB/div) -30 Distortion (dBc) Open Loop Phase (deg) Magnitude (1dB/div) Vo = 1Vpp -50 -60 2nd RL = 1k1 -70 2nd RL = 1501 -80 -90 0 1 2 3 4 0.01 5 Frequency (MHz) © 2014 Exar Corporation 0.1 1 10 100 Frequency (MHz) 7 / 17 exar.com/XR1008 Rev 1B XR1008, XR2008 Typical Performance Characteristics TA = 25°C, VS = +5V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted. CMRR PSRR 0 0 -10 -10 -20 -20 PSRR (dB) CMRR (dB) -30 -40 -50 -60 -70 -30 -40 -50 -60 -80 -70 -90 -100 -80 100 1k 10k 100k 1M 10M 100 100M Frequency (Hz) Output Swing 1k 10k 100k 1M 10M 100M Frequency (Hz) Output Voltage vs. Output Current 3 Output Voltage (0.5V/div) Output Voltage (0.6V/div) 2.7 0 -3 0 50 Time (1+s/div) Output Voltage (20mV/div) Small Signal Pulse Response at VS = 5V Time (10ns/div) © 2014 Exar Corporation -50 Output Current (10mA/div) Output Voltage (20mV/div) Small Signal Pulse Response at VS = 2.7V 0 Time (10ns/div) 8 / 17 exar.com/XR1008 Rev 1B XR1008, XR2008 Typical Performance Characteristics TA = 25°C, VS = +5V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted. Large Signal Pulse Response at VS = 5V Input Voltage Noise Voltage Noise (nV/3Hz) Output Voltage (0.5V/div) 70 60 50 40 30 20 10 0 0.0001 Time (10ns/div) © 2014 Exar Corporation 0.001 0.01 0.1 1 10 Frequency (MHz) 9 / 17 exar.com/XR1008 Rev 1B XR1008, XR2008 Application Information +Vs 6.8μF General Description The XR1008 family are a single supply, general purpose, voltage-feedback amplifiers fabricated on a complementary bipolar process. The XR1008 offers 75MHz unity gain bandwidth, 50V/μs slew rate, and only 505μA supply current. It features a rail-to-rail output stage and is unity gain stable. Input 0.1μF + Output RL 0.1μF Figures 1, 2, and 3 illustrate typical circuit configurations for non-inverting, inverting, and unity gain topologies for dual supply applications. They show the recommended bypass capacitor values and overall closed loop gain equations. Figure 4 shows the typical non-inverting gain circuit for single supply applications. 6.8μF Figure 3: Unity Gain Circuit The common mode input range extends to 300mV below ground in single supply operation. Exceeding these values will not cause phase reversal. However, if the input voltage exceeds the rails by more than 0.5V, the input ESD devices will begin to conduct. +Vs 6.8μF + The design uses a Darlington output stage. The output stage is short circuit protected and offers “soft” saturation protection that improves recovery time. In + - 6.8μF Out Rg Figure 4: Single Supply Non-Inverting Gain Circuit 0.1μF + 0.1μF Rf +Vs Input G=1 -Vs Output - For optimum response at a gain of +2, a feedback resistor of 1kΩ is recommended. Figure 5 illustrates the XR1008 frequency response with both 1kΩ and 2kΩ feedback resistors. RL 0.1μF Rg 6.8μF -Vs Rf G = 1 + (Rf/Rg) Figure 1: Typical Non-Inverting Gain Circuit G=2 RL = 1kΩ Magnitude (1dB/div) +Vs 6.8μF R1 Input Rg 0.1μF + Rf = 2kΩ Rf = 1kΩ Output RL 0.1μF 6.8μF -Vs 0.1 Rf 1 10 100 Frequency (MHz) Figure 5: Frequency Response vs. Rf G = - (Rf/Rg) For optimum input offset voltage set R1 = Rf || Rg Figure 2: Typical Inverting Gain Circuit © 2014 Exar Corporation 10 / 17 exar.com/XR1008 Rev 1B XR1008, XR2008 Power Dissipation Power dissipation should not be a factor when operating under the stated 1kΩ load condition. However, applications with low impedance, DC coupled loads should be analyzed to ensure that maximum allowed junction temperature is not exceeded. Guidelines listed below can be used to verify that the particular application will not cause the device to operate beyond it’s intended operating range. Assuming the load is referenced in the middle of the power rails or Vsupply/2. The XR1008 is short circuit protected. However, this may not guarantee that the maximum junction temperature (+150°C) is not exceeded under all conditions. Figure 6 shows the maximum safe power dissipation in the package vs. the ambient temperature for the packages available. 1.5 Maximum Power Dissipation (W) Maximum power levels are set by the absolute maximum junction rating of 150°C. To calculate the junction temperature, the package thermal resistance value ThetaJA (θJA) is used along with the total die power dissipation. TJunction = TAmbient + (θJA × PD) Where TAmbient is the temperature of the working environment. In order to determine PD, the power dissipated in the load needs to be subtracted from the total power delivered by the supplies. SOIC-8 1 0.5 MSOP-8 TSOT-5 0 -40 -20 0 20 40 60 80 100 120 Ambient Temperature (°C) PD = Psupply - Pload Figure 6. Maximum Power Derating Supply power is calculated by the standard power equation. Psupply = Vsupply × IRMSsupply Vsupply = VS+ - VSPower delivered to a purely resistive load is: Pload = ((Vload)RMS2)/Rloadeff The effective load resistor (Rloadeff) will need to include the effect of the feedback network. For instance, Driving Capacitive Loads Increased phase delay at the output due to capacitive loading can cause ringing, peaking in the frequency response, and possible unstable behavior. Use a series resistance, RS, between the amplifier and the load to help improve stability and settling performance. Refer to Figure 7. Rloadeff in Figure 3 would be calculated as: Input + RL || (Rf + Rg) - These measurements are basic and are relatively easy to perform with standard lab equipment. For design purposes however, prior knowledge of actual signal levels and load impedance is needed to determine the dissipated power. Here, PD can be found from PD = PQuiescent + PDynamic - Pload Quiescent power can be derived from the specified IS values along with known supply voltage, Vsupply. Load power can be calculated as above with the desired signal amplitudes using: Rs Rf Output CL RL Rg Figure 7. Addition of RS for Driving Capacitive Loads Table 1 provides the recommended RS for various capacitive loads. The recommended RS values result in approximately