E S II ES
Excel Semiconductor inc.
ES29LV320E
32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
GENERAL FEATURES
• Single power supply operation - 2.7V ~ 3.6V for read, program and erase operations
• Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC
SOFTWARE FEATURES
• Sector Structure - 8Kbyte x 8 boot sectors - 64Kbyte x 63 sectors - 256byte security sector • Top or Bottom boot block - ES29LV320ET for Top boot block device - ES29LV320EB for Bottom boot block device • A 256 bytes of extra sector for security code - Factory locked - Customer lockable • Package Options - 48-pin TSOP - 48-ball FBGA - Pb-free packages - All Pb-free products are RoHS-Compliant • Low Vcc write inhibit • Manufactured on 0.18um process technology • Compatible with JEDEC standards - Pinout and software compatible with single-power supply flash standard • • • • • • Erase Suspend / Erase Resume Data# poll and toggle for Program/erase status CFI ( Common Flash Interface) supported Unlock Bypass Program Autoselect mode Auto-sleep mode after tACC + 30ns
HARDWARE FEATURES
• Hardware reset input pin (RESET#) - Provides a hardware reset to device - Any internal device operation is terminated and the device returns to read mode by the reset • Ready/Busy# output pin (RY/BY#) - Provides a program or erase operational status about whether it is finished for read or still being progressed • WP#/ACC input pin - Two outermost boot sectors are protected when WP# is set to low, regardless of sector protection - Program speed is accelerated by raising WP#/ACC to a high voltage (11.5V~12.5V) • Sector protection / unprotection (RESET# , A9 ) - Hardware method of locking a sector to prevent any program or erase operation within that sector - Two methods are provided : - In-system method by RESET# pin - A9 high-voltage method for PROM programmers • Temporary Sector Unprotection (RESET# ) - Allows temporary unprotection of previously protected sectors to change data in-system
DEVICE PERFORMANCE
• Read access time - 70ns/90ns for normal Vcc range ( 2.7V ~ 3.6V ) • Program and erase time - Program time : 6us/byte, 8us/word ( typical ) - Accelerated program time : 4us/word ( typical ) - Sector erase time : 0.7sec/sector ( typical ) • Power consumption (typical values) - 15uA in standby or automatic sleep mode - 10mA active read current at 5MHz - 15mA active write current during program or erase
ES29LV320E
1
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
GENERAL PRODUCT DESCRIPTION
The ES29LV320 is a 32 megabit, 3.0 volt-only flash memory device, organized as 4M x 8 bits (Byte mode) or 2M x 16 bits (Word mode) which is configurable by BYTE#. Eight boot sectors and sixty three main sectors with uniform size are provided : 8Kbytes x 8 and 64Kbytes x 63. The device is manufactured with ESI’s proprietary, high performance and highly reliable 0.18um CMOS flash technology. The device can be programmed or erased in-system with standard 3.0 Volt Vcc supply ( 2.7V~3.6V) and can also be programmed in standard EPROM programmers. The device offers minimum endurance of 100,000 program/erase cycles and more than 10 years of data retention. The ES29LV320 offers access time as fast as 70ns or 90ns, allowing operation of high-speed microprocessors without wait states. Three separate control pins are provided to eliminate bus contention : chip enable (CE#), write enable (WE#) and output enable (OE#). All program and erase operation are automatically and internally performed and controlled by embedded program/erase algorithms built in the device. The device automatically generates and times the necessary high-voltage pulses to be applied to the cells, performs the verification, and counts the number of sequences. Some status bits (DQ7, DQ6 and DQ5) read by data# polling or toggling between consecutive read cycles provide to the users the internal status of program/erase operation: whether it is successfully done or still being progressed.
Extra Security Sector of 256 bytes
In the device, an extra security sector of 256 bytes is provided to customers. This extra sector can be used for various purposes such as storing ESN (Electronic Serial Number) or customer’s security codes. Once after the extra sector is written, it can be permanently locked by the device manufacturer (factory-locked) or a customer(customer-lockble). At the same time, a lock indicator bit (DQ7) is permanently set to a 1 if the part is factory- locked, or set to 0 if it is customer-lockable. Therefore, this lock indicator bit (DQ7) can be properly used to avoid that any customer-lockable part is used to replace a factory-locked part. The extra security sector is an extra memory space for customers when it is used as a customer-lockable version. So, it can be read and written like any other sectors. But it should be noted that the number of E/W(Erase and Write) cycles is limited to 300 times (maximum) only in the Security Sector. Special services such as ESN and factory-lock are available to customers (ESI’s Special-Code service ) The ES29LV320 is completely compatible with the JEDEC standard command set of single power supply Flash. Commands are written to the internal command register using standard write timings of microprocessor and data can be read out from the cell array in the device with the same way as used in other EPROM or flash devices.
ES29LV320E
2
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
PRODUCT SELECTOR GUIDE
Family Part Number Voltage Range Speed Option Max Access Time (ns) CE# Access (ns) OE# Access (ns) 70 70 70 30 ES29LV320E 2.7V ~ 3.6 V 90 90 90 40
FUNCTION BLOCK DIAGRAM
RY/BY# Vcc Vss Vcc Detector Timer/ Counter DQ0-DQ15(A-1)
Analog Bias Generator WE# RESET# Command Register Write State Machine
Input/Output Buffers
Sector Switches
Data Latch/ Sense Amps
Y-Decoder A Address Latch
Y-Decoder
CE# OE# BYTE#
X-Decoder
Cell Array
Chip Enable Output Enable Logic
ES29LV320E
3
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
PIN DESCRIPTION
Pin
A0-A20 DQ0-DQ14 DQ15/A-1 CE# OE# WE# WP#/ACC RESET# BYTE# RY/BY# Vcc Vss NC 21 Addresses 15 Data Inputs/Outputs DQ15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) Chip Enable Output Enable Write Enable Hardware Write Protect/Acceleration Pin Hardware Reset Pin, Active Low Selects 8-bit or 16-bit mode Ready/Busy Output 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) Device Ground Pin Not Connected Internally
Description
LOGIC SYMBOL
21 A0 ~ A20 DQ0 ~ DQ15 (A-1) CE# OE# WE# WP#/ACC RESET# BYTE# RY/BY#
16 or 8
ES29LV320E
4
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
CONNECTION DIAGRAM
A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# NC WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
48-Pin Standard TSOP
ES29LV320E
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
A16 BYTE# Vss DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 Vcc DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss CE# A0
48-Ball FBGA 6 x 8 mm)
(Top View, Balls Facing Down)
C D E F G H J K
7
A13
A12
A14
A15
A16
BYTE#
DQ15/ A-1
Vss
6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
5
WE#
RESET#
NC
A19
DQ5
DQ12
Vcc
DQ4
4
RY/ BY#
WP#/ ACC
A18
A20
DQ2
DQ10
DQ11
DQ3
3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
2
A3
A4
A2
A1
A0
CE#
OE#
Vss
ES29LV320E
5
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
DEVICE BUS OPERATIONS
Several device operational modes are provided in the ES29LV320 device. Commands are used to initiate the device operations. They are latched and stored into internal registers with the address and data information needed to execute the device operation. The available device operational modes are listed in Table 1 with the required inputs, controls, and the resulting outputs. Each operational mode is described in further detail in the following subsections.
on the device address inputs produce valid data on the device data outputs. The device stays at the read mode until another operation is activated by writing commands into the internal command register. Refer to the AC read cycle timing diagrams for further details ( Fig. 18 ).
Word/Byte Mode Configuration ( BYTE# )
The device data output can be configured by BYTE# into one of two modes : word and byte modes. If the BYTE# pin is set at logic ‘1’, the device is configured in word mode, DQ0 - DQ15 are active and controlled by CE# and OE#. If the BYTE# pin is set at logic ‘0’, the device is configured in byte mode, and only data I/O pins DQ0 - DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8 - DQ14 are tristated, and the DQ15 pin is used as an input for the LSB (A-1) address.
Read
The internal state of the device is set for the read mode and the device is ready for reading array data upon device power-up, or after a hardware reset. To read the stored data from the cell array of the device, CE# and OE# pins should be driven to VIL while WE# pin remains at VIH. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. Word or byte mode of output data is determined by the BYTE# pin. No additional command is needed in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses
Standby Mode
When the device is not selected or activated in a system, it needs to stay at the standby mode, in which current consumption is greatly reduced with outputs in the high impedance state.
ES29LV320E
6
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
The device enters the CMOS standby mode when CE# and RESET# pins are both held at Vcc+0.3V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within Vcc+0.3V, the device will be still in the standby mode, but the standby current will be greater than the CMOS standby current (0.2uA typically). When the device is in the standby mode, only standard access time (tCE) is required for read access, before it is ready for read data. And even if the device is deselected by CE# pin during erase or programming operation, the device draws active current until the operation is completely done. While the device stays in the standby mode, the output is placed in the high impedance state, independent of the OE# input. The device can enter the deep power-down mode where current consumption is greatly reduced down to less than 15uA typically by the following three ways:
- CMOS standby ( CE#, RESET# = Vcc + 0.3V ) - During the device reset ( RESET# = Vss + 0.3V ) - In Autosleep Mode ( after tACC + 30ns )
set-up cycle and the last cycle with the program data and addresses. In this mode, two unlock cycles are saved ( or bypassed ).
Sector Addresses
The entire memory space of cell array is divided into a many of small sectors: 8kbytes x 8 boot sectors and 64Kbytes x 63 main sectors. In erase operation, a single sector, multiple sectors, or the entire device (chip erase) can be selected for erase. The address space that each sector occupies is shown in detail in the Table 3-4.
Accelerated Program Mode
The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH (11.5V~12.5V) on this pin, the device automatically enters the previously mentioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. Only two-cycle program command sequences are required because the unlock bypass mode is automatically activated in this acceleration mode. The device returns to the normal operation when VHH is removed from the WP#/ACC pin. It should be noted that the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. In addition, the WP#/ ACC pin must not be left floating or unconnected; inconsistent or undesired behavior of the device may result.
Refer to the CMOS DC characteristics Table11 for further current specification.
Autosleep Mode
The device automatically enters a deep power-down mode called the autosleep mode when addresses remain stable for tACC+30ns. In this mode, current consumption is greatly reduced ( less than 15uA typical ), regardless of CE#, WE# and OE# control signals.
Writing Commands
To write a command or command sequences to initiate some operations such as program or erase, the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to “BYTE# timings for Write Operations” in the Fig. 21 for more information.
Autoselect Mode
Flash memories are intended for use in applications where the local CPU alters memory contents. In such applications, manufacturer and device identification (ID) codes must be accessible while the device resides in the target system ( the so called “in-system program”). On the other hand, signature codes have been typically accessed by raising A9 pin to a high voltage in PROM programmers. However, multiplexing high voltage onto address lines is not the generally desired system design practice. Therefore, in the ES29LV320 device an autoselect command is provided to allow the system to access the signature codes without any high voltage. The conventional A9 high-voltage method used in the PROM programers for signature codes are still supported in this device. 7
Rev. 0A May 25, 2006
Unlock Bypass Mode
To reduce more the programming time, an unlockbypass mode is provided. Once the device enters this mode, only two write cycles are required to initiate the programming operation instead of four cycles in the normal program command sequences which are composed of two unlock cycles, program
ES29LV320E
E S II ES
Excel Semiconductor inc.
If the system writes the autoselect command sequence, the device enters the Autoselect mode. The system can then read some useful codes such as manufacturer and device ID from the internal registers on DQ7 - DQ0. Standard read cycle timings apply in this mode. In the Autoselect mode, the following four informations can be accessed through either autoselect command method or A9 high-voltage autoselect method. Refer to the Table 2. - Manufacturer ID - Device ID - Security Sector Lock-indicator - Sector protection verify
Flash memory, enabling the system to read the boot-up firmware from the Flash memory.Refer to the AC Characteristics tables for RESET# parameters and to Fig. 19 for the timing diagram.
SECTOR GROUP PROTECTION
The ES29LV320 features hardware sector group protection. A sector group consists of two or more adjacent sectors that are protected or unprotected at the same time. In the device, sector protection is performed on the group of sectors previously defined in the Table 3-4. Once after a group of sectors are protected, any program or erase operation is not allowed in the protected sector group. The previously protected sectors must be unprotected by one of the unprotect methods provided here before changing data in those sectors. Sector protection can be implemented via two methods. - In-system protection - A9 High-voltage protection To check whether the sector group protection was successfully executed or not, another operation called “protect verification” needs to be performed after the protection operation on a group of sectors. All protection and protect verifications provided in the device are summarized in detail at the Table 1.
Hardware Device Reset ( RESET# )
The RESET# pin provides a hardware method of resetting the device to read array data. When the RESET# pin is driven low for at least a period of tRP , the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once after the device is ready to accept another command sequence, to ensure data integrity.
CMOS Standby during Device Reset In-System Protection
Current is reduced for the duration of the RESET# pulse. When RESET# is held at Vss+0.3V, the device draws the greatly reduced CMOS standby current ( ICC4 ). If RESET# is held at VIL but not within Vss+0.3V, the standby current will be greater. “In-system protection”, the primary method, requires VID (11.5V~12.5V) on the RESET# with A6=0, A1=1, and A0=0. This method can be implemented either in-system or via programming equipment. This method uses standard microprocessor bus cycle timing. Refer to Fig. 29 for timing diagram and Fig. 3 for the protection algorithm.
RY/BY# and Terminating Operations
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is completed, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is completed. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data after the RESET# pin returns to VIH, which requires a time of tRH.
A9 High-Voltage Protection
“High-voltage protection”, the alternate method intended only for programming equipment, must force VID (11.5V~12.5V) on address pin A9 and control pin OE# with A6=0, A1=1 and A0=0. Refer to Fig. 31 for timing diagram and Fig. 5 for the protection algorithm.
SECTOR UNPROTECTION
The previously protected sectors must be unprotected before modifying any data in the sectors. The sector unprotection algorithm unprotects all sectors in parallel. All unprotected sectors must first
RESET# tied to the System Reset
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the
ES29LV320E
8
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
be protected prior to the first sector unprotection write cycle to avoid any over-erase due to the intrinsic erase characteristics of the protection cell. After the unprotection operation, all previously protected sectors will need to be individually re-protected. Standard microprocessor bus cycle timings are used in the unprotection and unprotect verification operations. Three unprotect methods are provided in the ES29LV320 device. All unprotection and unprotect verification cycles are summarized in detail at the Table 1. - In-system unprotection - A9 High-voltage unprotection - Temporary sector unprotection
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two “outermost” 8Kbytes boot sectors independently of whether those sectors were protected or unprotected using the method described in “Sector Group Protection and Unprotection”. The two outermost of 8 Kbyte boot sectors are the two sectors containing the lowest addresses in a bottom-bootconfigured device, or the two sectors containing the highest addresses in a top-boot-configured device. If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the two outermost 8 Kbyte boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these two sectors depends on whether they were last protected or unprotected using the method described in “Sector Group Protection and Unprotection”. Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result.
In-System Unprotection
“In-system unprotection”, the primary method, requires VID (11.5V~12.5V) on the RESET# with A6=1, A1=1, and A0=0. This method can be implemented either in-system or via programming equipment. This method uses standard microprocessor bus cycle timing. Refer to Fig. 29 for timing diagram and Fig. 4 for the unprotection algorithm.
A9 High-Voltage Unprotection
“High-voltage unprotection”, the alternate method intended only for programming equipment, must force VID (11.5V~12.5V) on address pin A9 and control pin OE# with A6=1, A1=1 and A0=0. Refer to Fig. 32 for timing diagram and Fig. 6 for the unprotection algorithm.
START
RESET# = VID (Note 1)
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID (11.5V~12.5V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Fig. 1 shows the algorithm, and Fig. 27 shows the timing diagrams for this feature.
Perform Erase or Program Operations
RESET# = VIH
Temporary Sector Unprotect Completed (Note 2)
Notes:
1. All protected sectors are unprotected (If WP#/ACC = VIL, outermost boot sectors will remain protected). 2. All previously protected sectors are protected once again.
WRITE PROTECT ( WP# )
The Write Protect function provides a hardware method of protecting certain boot sectors without using VID. This function is one of two provided by the WP#/ACC pin.
Figure 1. Temporary Sector Unprotect Operation
9
ES29LV320E
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
SECURITY SECTOR
The security sector of the ES29LV320 device provides an extra flash memory space that enables permanent part identification through an Electronic Serial Number (ESN). The security sector uses a security lock-Indicator Bit (DQ7) to indicate whether or not the security sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. Note that the ES29LV320 has a security sector size of 256 bytes.
- A random, secure ESN (16 bytes ) only - Customer code through the ESI’s Special-Code service - Both a random, secure ESN and customer code through the ESI’s Special-Code service.
ESN ( Electronic Serial Number )
In devices that have an ESN, a Bottom Boot device will have the 16-byte (8-word) ESN in sector 0 at addresses 000000h-00000Fh in byte mode (or 000000h-000007h in word mode). In the Top Boot device the ESN will be in sector 70 at addresses 3FFF00h-3FFF0Fh in byte mode (or 1FFF80h1FFF87h in word mode). Note that in upcoming top boot versions of this device, the ESN will be located in sector 70 at addresses 3FFF00h-3FFF0Fh in byte mode (or 1FFF80h-1FFF87h in word mode).
Security Lock-Indicator Bit (DQ7)
In the device, the security sector can be provided in either factory locked version or customer lockable version. The factory-locked version is always protected when shipped from the factory, and has the security lock-Indicator Bit permanently set to a “1”. The customer-lockable version is shipped with the security sector unprotected, allowing customers to utilize the sector in any manner they choose. The customer-lockable version has the security lockIndicator Bit permanently set to a “0”. Thus, the security lock-Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked.
ESI’s Special-Code Service
Customers may opt to have their code programmed by ESI through the ESI’s Special-Code service. ESI programs the customer’s code, with or without the random ESN. The devices are then shipped from ESI’s factory with the Security Sector permanently locked. Contact an ESI representative for details on using ESI’s Special-Code service.
Customer-Lockable Device
The customer lockable version allows the security sector to be freely programmed or erased and then permanently locked. Note that the ES29LV320 has a security sector size of 256 bytes (128 words). Note that the accelerated programming (ACC) and unlock bypass functions are not available when programming the security sector.
Access to the Security Sector
The security sector can be accessed through a command sequence: Enter security and Exit security sector commands. After the system has written the Enter security sector command sequence, it may read the security sector by using the addresses normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit security sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device returns to read mode in which the normal boot sectors can be accessed, instead of the security sector.
Protection of the Security Sector
The security sector area can be protected using the following procedures: Write the three-cycle “Enter security sector command” sequence, and then following the in-system sector protect algorithm as shown in Fig. 2, except that RESET# may be at either VIH or VID. This allows In-system protection of the security sector without raising any device pin to a high voltage. Note that this method is only applicable to the security sector. To verify the protect/ unprotect status of the security sector. follow the algorithm shown in Fig. 2.
Factory-Locked Device
In a factory-locked device, the security sector is protected when the device is shipped from the factory. The security sector cannot be modified in any way. The device is available preprogrammed with one of the following:
ES29LV320E
10
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Start If data=00h, security sector is unprotected. If data=01h, security sector is protected
can only occur after successful completion of specific command sequences. And several features are incorporated to prevent inadvertent write cycles resulting from Vcc power-up and power-down transition or system noise.
RESET# = VIH or VID
Low Vcc Write inhibit
When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during Vcc power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until Vcc is greater than VLKO. The system must provide proper signals to the control pins to prevent unintentional writes when Vcc is greater than VLKO.
Wait 1us Remove VIH or VID from RESET# Write 60h to any address Write reset command Write 40h to security sector address with A6=0, A1=1,A0=0
Security sector Protect Verify complete
Write Pulse “Glitch” Protection
Noise pulses of less than 5ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
Read from security sector address with A6=0,A1=1,A0=0
Logical inhibit Figure 2. Security Sector Protect Verify
Write cycles are inhibited by holding any one of OE#=VIL, CE#=VIH or WE#=VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one.
Exit from the Security Sector
Once the Security Sector is locked protected and verified, the system must write the Exit Security Sector Region command sequence to return to reading and writing the remainder of the array.
Power-up Write inhibit
If WE#=CE#=VIL and OE#=VIH during power up, the device does not accept any commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
Caution for the Security Sector Protection
The security sector protection must be used with caution since, once protected, there is no procedure available for unprotecting the security sector area and none of the bits in the security sector memory space can be modified in any way.
HARDWARE DATA PROTECTION
The ES29LV320 device provides some protection measures against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During powerup, all internal registers and latches in the device are cleared and the device automatically resets to the read mode. In addition, with its internal state machine built-in the device, any alteration of the memory contents or any initiation of new operation 11
ES29LV320E
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Table 1. ES29LV320 Device Bus Operations
Operation CE# OE# WE# RESET# WP#/ACC Addresses (Note 1) DQ0 ~ DQ7 DQ8~DQ15 BYTE# = VIH
DOUT (Note 4) (Note 4) High-Z High-Z Output Disable Reset L X Sector Protect (Note 2) Sector Unprotect (Note 2) Temporary Sector Unprotect L H X H H X L H L VID L/H L/H L/H X X SA,A6=L, A1=H,A0=L SA,A6=H, A1=H,A0=L High-Z High-Z (Note 4) High-Z High-Z X X DQ8~DQ14 = High-Z, DQ15 = A-1
BYTE# = VIL
Read Write Accelerated Program Standby
L L L Vcc+ 0.3V
L H H X
H L L X
H H H Vcc+ 0.3V
L/H (Note 3) VHH H
AIN AIN AIN X
DOUT (Note 4) (Note 4) High-Z
In-system
L
H
L
VID
L/H (Note 3) H (Note 3) H (Note 3)
(Note 4)
X
X
X
X
X
VID
AIN SA,A9=VID, A6=L, A1=H,A0=L
(Note 4)
(Note 4)
High-Z
Sector protect A9 High-Voltage Method Sector unprotect
L
VID
L
H
(Note 4) L VID L H H (Note 3) SA,A9=VID, A6=H, A1=H,A0=L
(Note 4)
High-Z
Legend: L=Logic Low=VIL, H=Logic High=VIH, VID=11.5-12.5V, VHH=11.5-12.5V, X=Don’t Care, SA=Sector Address,
AIN=Address In, DIN=Data In, DOUT=Data Out
Notes:
1. Addresses are A20:A0 in word mode (BYTE#=VIH) , A20:A-1 in byte mode (BYTE#=VIL). 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector Block Protection and Unprotection” section. 3. If WP#/ACC=VIL, the two outermost boot sectors remain protected. If WP#/ACC=VIH, the two outermost boot sector protection depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. If WP#/ACC=VHH, all sectors will be unprotected. 4. DIN or DOUT as required by command sequence, data polling, or sector protection algorithm.
Table 2. Autoselect Codes (A9 High-Voltage Method)
A20 to A12
X X
Description
CE# OE# WE#
A11 to A10
X X
A9
A8 to A7
X X
A6
A5 to A2
X X
DQ8~DQ15 A1 A0 BYTE# BYTE# = VIH = VIL
X 22h X X
DQ7~DQ0
ManufactureID:ESI Device ID: ES29LV320E Sector Protection Verification Security Sector Indicator Bit(DQ7)
L L
L L
H H
VID VID VID
L L
L L
L H
4Ah F6(T),F9h(B) 01h(protected) 00h(unprotected) 99h(factory-locked), 19h(customer-lockable)
L
L
H
SA
X
X
L
X
H
L
X
X
L
L
H
X
X
VID
X
L
X
H
H
X
X
Legend: T= Top Boot Block, B = Bottom Boot Block, L=Logic Low=VIL, H=Logic High=VIH, SA=Sector Address, X = Don’t care 12
ES29LV320E
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Table 3. Top Boot Sector Addresses (ES29LV320ET)
Group Sector
SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55
Sector address A20~A12
000000XXX 000001XXX 000010XXX 000011XXX 000100XXX 000101XXX 000110XXX 000111XXX 001000XXX 001001XXX 001010XXX 001011XXX 001100XXX 001101XXX 001110XXX 001111XXX 010000XXX 010001XXX 010010XXX 010011XXX 010100XXX 010101XXX 010110XXX 010111XXX 011000XXX 011001XXX 011010XXX 011011XXX 011100XXX 011101XXX 011110XXX 011111XXX 100000XXX 100001XXX 100010XXX 100011XXX 100100XXX 100101XXX 100110XXX 100111XXX 101000XXX 101001XXX 101010XXX 101011XXX 101100XXX 101101XXX 101110XXX 101111XXX 110000XXX 110001XXX 110010XXX 110011XXX 110100XXX 110101XXX 110110XXX 110111XXX
Sector Size (Kbytes/Kwords)
64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32
(X8) Address Range
000000h~00FFFFh 010000h~01FFFFh 020000h~02FFFFh 030000h~03FFFFh 040000h~04FFFFh 050000h~05FFFFh 060000h~06FFFFh 070000h~07FFFFh 080000h~08FFFFh 090000h~09FFFFh 0A0000h~0AFFFFh 0B0000h~0BFFFFh 0C0000h~0CFFFFh 0D0000h~0DFFFFh 0E0000h~0EFFFFh 0F0000h~0FFFFFh 100000h~10FFFFh 110000h~11FFFFh 120000h~12FFFFh 130000h~13FFFFh 140000h~14FFFFh 150000h~15FFFFh 160000h~16FFFFh 170000h~17FFFFh 180000h~18FFFFh 190000h~19FFFFh 1A0000h~1AFFFFh 1B0000h~1BFFFFh 1C0000h~1CFFFFh 1D0000h~1DFFFFh 1E0000h~1EFFFFh 1F0000h~1FFFFFh 200000h~20FFFFh 210000h~21FFFFh 220000h~22FFFFh 230000h~23FFFFh 240000h~24FFFFh 250000h~25FFFFh 260000h~26FFFFh 270000h~27FFFFh 280000h~28FFFFh 290000h~29FFFFh 2A0000h~2AFFFFh 2B0000h~2BFFFFh 2C0000h~2CFFFFh 2D0000h~2DFFFFh 2E0000h~2EFFFFh 2F0000h~2FFFFFh 300000h~30FFFFh 310000h~31FFFFh 320000h~32FFFFh 330000h~33FFFFh 340000h~34FFFFh 350000h~35FFFFh 360000h~36FFFFh 370000h~37FFFFh
(X16) Address Range
000000h~07FFFh 008000h~0FFFFh 010000h~17FFFh 018000h~01FFFFh 020000h~027FFFh 028000h~02FFFFh 030000h~037FFFh 038000h~03FFFFh 040000h~047FFFh 048000h~04FFFFh 050000h~057FFFh 058000h~05FFFFh 060000h~067FFFh 068000h~06FFFFh 070000h~077FFFh 078000h~07FFFFh 080000h~087FFFh 088000h~08FFFFh 090000h~097FFFh 098000h~09FFFFh 0A0000h~0A7FFFh 0A8000h~0AFFFFh 0B0000h~0B7FFFh 0B8000h~0BFFFFh 0C0000h~0C7FFFh 0C8000h~0CFFFFh 0D0000h~0D7FFFh 0D8000h~0DFFFFh 0E0000h~0E7FFFh 0E8000h~0EFFFFh 0F0000h~0F7FFFh 0F8000h~0FFFFFh 100000h~107FFFh 108000h~10FFFFh 110000h~117FFFh 118000h~11FFFFh 120000h~127FFFh 128000h~12FFFFh 130000h~137FFFh 138000h~13FFFFh 140000h~147FFFh 148000h~14FFFFh 150000h~157FFFh 158000h~15FFFFh 160000h~167FFFh 168000h~16FFFFh 170000h~177FFFh 178000h~17FFFFh 180000h~187FFFh 188000h~18FFFFh 190000h~197FFFh 198000h~19FFFFh 1A0000h~1A7FFFh 1A8000h~1AFFFFh 1B0000h~1B7FFFh 1B8000h~1BFFFFh
Remark
SG0
SG1
SG2
SG3
SG4
SG5
SG6
Main Sector
SG7
SG8
SG9
SG10
SG11
SG12
SG13
ES29LV320E
13
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Table 3. Top Boot Sector Addresses (ES29LV320ET) Continued
Group Sector SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 Sector address A20~A12 111000XXX 111001XXX 111010XXX 111011XXX 111100XXX 111101XXX 111110XXX 111111000 111111001 111111010 111111011 111111100 111111101 111111110 111111111 111111111 Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 bytes/words (256/128) (X8) Address Range 380000h~38FFFFh 390000h~39FFFFh 3A0000h~3AFFFFh 3B0000h~3BFFFFh 3C0000h~3CFFFFh 3D0000h~3DFFFFh 3E0000h~3EFFFFh 3F0000h~3F1FFFh 3F2000h~3F3FFFh 3F4000h~3F5FFFh 3F6000h~3F7FFFh 3F8000h~3F9FFFh 3FA000h~3FBFFFh 3FC000h~3FDFFFh 3FE000h~3FFFFFh 3FFF00h~3FFFFFh (X16) Address Range 1C0000h~1C7FFFh 1C8000h~1CFFFFh 1D0000h~1D7FFFh 1D8000h~1DFFFFh 1E0000h~1E7FFFh 1E8000h~1EFFFFh 1F0000h~1F7FFFh 1F8000h~1F8FFFh 1F9000h~1F9FFFh 1FA000h~1FAFFFh 1FB000h~1FBFFFh 1FC000h~1FCFFFh 1FD000h~1FDFFFh 1FE000h~1FEFFFh 1FF000h~1FFFFFh 1FFF80h~1FFFFFh Remark
SG14
Main Sector
SG15 SG16 SG17 SG18 SG19 SG20 SG21 SG22 SG23
Boot Sector SA69,SA70 protected at WP#/ ACC=low
Security Sector
Note:
The addresses range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH).
ES29LV320E
14
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Table 4. Bottom Boot Sector Addresses (ES29LV320EB)
Group SG0 SG1 SG2 SG3 SG4 SG5 SG6 SG7 SG8 Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 Sector address A20~A12 000000000 000000001 000000010 000000011 000000100 000000101 000000110 000000111 000001XXX 000010XXX 000011XXX 000100XXX 000101XXX 000110XXX 000111XXX 001000XXX 001001XXX 001010XXX 001011XXX 001100XXX 001101XXX 001110XXX 001111XXX 010000XXX 010001XXX 010010XXX 010011XXX 010100XXX 010101XXX 010110XXX 010111XXX 011000XXX 011001XXX 011010XXX 011011XXX 011100XXX 011101XXX 011110XXX 011111XXX 100000XXX 100001XXX 100010XXX 100011XXX 100100XXX 100101XXX 100110XXX 100111XXX 101000XXX 101001XXX 101010XXX 101011XXX 101100XXX 101101XXX 101110XXX 101111XXX Sector Size (Kbytes/Kwords) 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (X8) Address Range 000000h~001FFFh 002000h~003FFFh 004000h~005FFFh 006000h~007FFFh 008000h~009FFFh 00A000h~00BFFFh 00C000h~00DFFFh 00E000h~00FFFFh 010000h~01FFFFh 020000h~02FFFFh 030000h~03FFFFh 040000h~04FFFFh 050000h~05FFFFh 060000h~06FFFFh 070000h~07FFFFh 080000h~08FFFFh 090000h~09FFFFh 0A0000h~0AFFFFh 0B0000h~0BFFFFh 0C0000h~0CFFFFh 0D0000h~0DFFFFh 0E0000h~0EFFFFh 0F0000h~0FFFFFh 100000h~10FFFFh 110000h~11FFFFh 120000h~12FFFFh 130000h~13FFFFh 140000h~14FFFFh 150000h~15FFFFh 160000h~16FFFFh 170000h~17FFFFh 180000h~18FFFFh 190000h~19FFFFh 1A0000h~1AFFFFh 1B0000h~1BFFFFh 1C0000h~1CFFFFh 1D0000h~1DFFFFh 1E0000h~1EFFFFh 1F0000h~1FFFFFh 200000h~20FFFFh 210000h~21FFFFh 220000h~22FFFFh 230000h~23FFFFh 240000h~24FFFFh 250000h~25FFFFh 260000h~26FFFFh 270000h~27FFFFh 280000h~28FFFFh 290000h~29FFFFh 2A0000h~2AFFFFh 2B0000h~2BFFFFh 2C0000h~2CFFFFh 2D0000h~2DFFFFh 2E0000h~2EFFFFh 2F0000h~2FFFFFh (X16) Address Range 000000h~000FFFh 001000h~001FFFh 002000h~002FFFh 003000h~003FFFh 004000h~004FFFh 005000h~005FFFh 006000h~006FFFh 007000h~007FFFh 008000h~00FFFFh 010000h~017FFFh 018000h~01FFFFh 020000h~027FFFh 028000h~02FFFFh 030000h~037FFFh 038000h~03FFFFh 040000h~047FFFh 048000h~04FFFFh 050000h~057FFFh 058000h~05FFFFh 060000h~067FFFh 068000h~06FFFFh 070000h~077FFFh 078000h~07FFFFh 080000h~087FFFh 088000h~08FFFFh 090000h~097FFFh 098000h~09FFFFh 0A0000h~0A7FFFh 0A8000h~0AFFFFh 0B0000h~0B7FFFh 0B8000h~0BFFFFh 0C0000h~0C7FFFh 0C8000h~0CFFFFh 0D0000h~0D7FFFh 0D8000h~0DFFFFh 0E0000h~0E7FFFh 0E8000h~0EFFFFh 0F0000h~0F7FFFh 0F8000h~0FFFFFh 100000h~107FFFh 108000h~10FFFFh 110000h~117FFFh 118000h~11FFFFh 120000h~127FFFh 128000h~12FFFFh 130000h~137FFFh 138000h~13FFFFh 140000h~147FFFh 148000h~14FFFFh 150000h~157FFFh 158000h~15FFFFh 160000h~167FFFh 168000h~16FFFFh 170000h~177FFFh 178000h~17FFFFh Remark Boot Sector SA0,SA1 protected at WP#/ ACC=low
SG9
SG10
SG11
SG12
SG13
Main Sector
SG14
SG15
SG16
SG17
SG18
SG19
ES29LV320E
15
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Table 4. Bottom Boot Sector Addresses (ES29LV320EB) Continued
Group Sector SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 Sector address A20~A12 110000XXX 110001XXX 110010XXX 110011XXX 110100XXX 110101XXX 110110XXX 110111XXX 111000XXX 111001XXX 111010XXX 111011XXX 111100XXX 111101XXX 111110XXX 111111XXX 000000000 Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 bytes/words (256/128) (X8) Address Range 300000h~30FFFFh 310000h~31FFFFh 320000h~32FFFFh 330000h~33FFFFh 340000h~34FFFFh 350000h~35FFFFh 360000h~36FFFFh 370000h~37FFFFh 380000h~38FFFFh 390000h~39FFFFh 3A0000h~3AFFFFh 3B0000h~3BFFFFh 3C0000h~3CFFFFh 3D0000h~3DFFFFh 3E0000h~3EFFFFh 3F0000h~3FFFFFh 000000h~0000FFh (X16) Address Range 180000h~187FFFh 188000h~18FFFFh 190000h~197FFFh 198000h~19FFFFh 1A0000h~1A7FFFh 1A8000h~1AFFFFh 1B0000h~1B7FFFh 1B8000h~1BFFFFh 1C0000h~1C7FFFh 1C8000h~1CFFFFh 1D0000h~1D7FFFh 1D8000h~1DFFFFh 1E0000h~1E7FFFh 1E8000h~1EFFFFh 1F0000h~1F7FFFh 1F8000h~1FFFFFh 000000h~00007Fh Remark
SG20
SG21
Main Sector
SG22
SG23
Security Sector
Note:
The addresses range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH).
ES29LV320E
16
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
In-System Protection / Unprotection Method
START COUNT = 1 RESET# = VID Wait 1us Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address
START COUNT = 1 RESET# = VID Wait 1us
Temporary Sector Unprotect Mode
No
First Write Cycle = 60h? Yes Set up sector address Sector Protect: Write 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Wait 150us Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Read from sector address with A6 = 0, A1 = 1, A0 = 0
First Write Cycle = 60h? Yes No All sectors protected ? Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A6 = 1, A1 = 1,
No
Temporary Sector Unprotect Mode
Increment COUNT
Reset COUNT = 1
Wait 15ms Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 = 0 Read from sector address with A6 = 1, A1 = 1, A0 = 0 No No
Increment COUNT
Set up next sector address
No No COUNT=25? Yes Device failed Data = 01h? Yes Protect another sector? No Remove VID from RESET# Write reset command Sector Protect complete Yes
COUNT =1000? Yes Device failed
Data = 00h? Yes Last sector verified? Yes Remove VID from RESET# Write reset command Sector Unprotect complete No
Figure 3. In-System Sector Protect Algorithm
Figure 4. In-System Sector Unprotect Algorithm
ES29LV320E
17
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
A9 High-Voltage Method
Start
Start Note: All sectors must be previously protected.
COUNT = 1 COUNT = 1 SET A9=OE#=VID SET A9=OE#=VID
Set Sector Address A CE#, A6, A0=VIL RESET#, A1=VIH
CE#, A0=VIL , RESET#, A6, A1=VIH
SET WE# = VIL SET WE# = VIL Wait 15ms Wait 150 us SET WE# = VIH Increase COUNT SET WE# = VIH Increase COUNT CE#,OE#,A6,A0=VIL RESET#, A1 = VIH CE#,OE#, A0=VIL RESET#, A6, A1=VIH
Set Sector AddressA Read Data No No No COUNT= 25? Data = 01h? No COUNT=1000? Yes Yes Yes Device failed Protect Another Sector ? Yes Device failed The Last Sector Address ? No Remove VID from A9 and Write Reset Command Yes Remove VID from A9 and Write Reset Command No Yes Data = 00h? Increase Sector Address Read Data
Sector Protection Complete Sector Unprotection Complete
Figure 5. Sector Protection Algorithm (A9 High-Voltage Method)
Figure 6. Sector Un-Protection Algorithm (A9 High-Voltage Method)
18
Rev. 0A May 25, 2006
ES29LV320E
E S II ES
Excel Semiconductor inc.
Common Flash Memory Interface (CFI)
CFI is supported in the ES29LV320 device. The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 5-8. To terminate reading CFI data, the system must write the reset command.The CFI query command can be written to the system when the device is in the autoselect mode or the erase-suspend-read mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 5-8. When the reset command is written, the device returns respectively to the read mode or erase-suspend-read mode.
Table 5. CFI Query Identification String
Addresses (Word Mode)
10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah
Addresses (Byte Mode)
20h 22h 24h 26h 28h 2Ah 2Ch 2Eh 30h 32h 34h
Data
0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h
Description
Query Unique ASCII string “QRY”
Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command Set(00h = none exists) Address for Alternate OEM Extended Table (00h = none exists)
Table 6. System Interface String
Addresses (Word Mode)
1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h
Addresses (Byte Mode)
36h 38h 3Ah 3Ch 3Eh 40h 42h 44h 46h 48h 4Ah 4Ch
Data
0027h 0036h 0000h 0000h 0004h 0000h 000Ah 0000h 0005h 0000h 0004h 0000h Vcc Min. (write/erase) D7-D4: volt, D3-D0: 100 millivolt Vcc Max. (write/erase) D7-D4: volt, D3-D0: 100 millivolt
Description
Vpp Min. voltage (00h = no Vpp pin present) Vpp Max. voltage (00h = no Vpp pin present) Typical timeout per single byte/word write 2N us Typical timeout for Min. size buffer write 2N us (00h = not supported) Typical timeout per individual block erase 2N ms Typical timeout for full chip erase 2N ms (00h = not supported) Max. timeout for byte/word write 2N times typical Max. timeout for buffer write 2N times typical Max. timeout per individual block erase 2N times typical Max. timeout for full chip erase 2N times typical (00h = not supported)
ES29LV320E
19
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Table 7. Device Geometry Definition
Addresses (Word Mode)
27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch
Addresses (Byte Mode)
4Eh 50h 52h 54h 56h 58h 5Ah 5Ch 5Eh 60h 62h 64h 66h 68h 6Ah 6Ch 6Eh 70h 72h 74h 76h 78h
Data
0016h 0002h 0000h 0000h 0000h 0002h 0007h 0000h 0020h 0000h 003Eh 0000h 0000h 0001h 0000h 0000h 0000h 0000h 0000h 0000h 0000h 0000h Device Size = 2N byte
Description
Flash Device Interface Description 02 = x8, x16 Asynchronous Max. number of bytes multi-byte write = 2N (00h = not supported) Number of Erase Block Regions within device Erase Block Region 1 Information Number of identical size erase block = 0007h+1 =8 Erase Block Region 1 Information Number of identical size erase block = 0020h * 256byte = 8Kbyte Erase Block Region 2 Information Number of identical size erase block = 003Eh+1 =63 Erase Block Region 2 Information Number of identical size erase block = 0100h * 256byte = 64Kbyte Erase Block Region 3 Information Erase Block Region 3 Information Erase Block Region 4 Information Erase Block Region 4 Information
ES29LV320E
20
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Table 8. Primary Vendor-Specific Extended Query
Addresses (Word Mode)
40h 41h 42h 43h 44h 45h
Addresses (Byte Mode)
80h 82h 84h 86h 88h 8Ah
Data
0050h 0052h 0049h 0031h 0031h 0000h
Description
Query-unique ASCII string “PRI” Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not required Silicon Revision Number (Bits 7-2) Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write Sector Protect 0 = Not Supported, X = Number of sectors in per group Sector Temporary Unprotect 00 = Not Supported, 01 = Supported Sector Protect/Unprotect scheme 04 = In-System Method and A9 High-Voltage Method Simultaneous Operation 00 = Not Supported Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page ACC(Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100mV ACC(Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100mV Top/Bottom Boot Sector Flag 02h = Bottom Boot Device, 03h = Top Boot Device
46h 47h 48h 49h 4Ah 4Bh 4Ch 4Dh 4Eh 4Fh
8Ch 8Eh 90h 92h 94h 96h 98h 9Ah 9Ch 9Eh
0002h 0004h 0001h 0004h 0000h 0000h 0000h 00B5h 00C5h 000Xh
ES29LV320E
21
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 9 defines the valid register command sequences. Note that writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is required to return the device to normal operation. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams.
the Device Bus Operations section for more information.The Read-Only Operations table provides the read parameters, and Fig. 18 shows the timing diagram
RESET COMMAND
Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to which the system was writing to the read mode. If the program command sequence is written to a sector that is in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If the device entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns the device to the erase-suspendread mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the device to the read mode (or erase-suspend-read mode if the device was in Erase-Suspend). 22
Rev. 0A May 25, 2006
READING ARRAY DATA
The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information. The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See the next section, Reset Command, for more information. See also Requirements for Reading Array Data in
ES29LV320E
E S II ES
Excel Semiconductor inc.
Command Definitions
Table 9. ES29LV320 Command Definitions
Command Sequence (Note 1) Read (Note 6) Reset (Note 7) Manufacturer ID Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Cycles Bus Cycles (Notes 2~5) First Addr RA XXX 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA XXX XXX 555 AAA 555 AAA XXX XXX 55 AA Data RD F0 AA 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 PA XXX 2AA 555 2AA 555 55 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 90 X00 X01 X02 X03 X06 (SA)X02 (SA)X04 4A (See Table 2) 99/19 Second Addr Data Third Addr Data Fourth Addr Data Fifth Addr Data Sixth Addr Data
1 1 4
Autoselect (Note 8)
Device ID Security Sector Fac tory Protect (Note 9) Sector Protect Verify (Note 10)
4
AA
55
90
4
AA
55
90
4
AA
55
90
00/01
Enter Security Sector Region
3
AA
55
88
Exit Security Sector Region
4
AA
55
90
XXX
00
Program
4
AA
55
A0
PA
PD
Unlock Bypass Unlock Bypass Program (Note 11) Unlock Bypass Reset (Note 12) Chip Erase
3 2 2
AA A0 90 AA
55 PD 00 55
20
Word Byte Word Byte
6
555 AAA 555 AAA
80
555 AAA 555 AAA
AA
2AA 555 2AA 555
55
555 AAA SA
10
Sector Erase Erase Suspend (Note 13) Erase Resume (Note 14) CFI Query (Note 15)
6 1 1
AA B0 30 98
55
80
AA
55
30
Word Byte
1
Legend:
X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A20-A12 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations. 2. All values are in hexadecimal. 3. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles. 4. Data bits DQ15-DQ8 are don’t care in command sequences, except for RD and PD 5. Unless otherwise noted, address bits A20-A11 are don’t cares. 6. No unlock or command cycles required when device is in read mode. 7. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when a device is in the autoselect mode, or if DQ5 goes high (while the device is providing status information). 8. The fourth cycle of the autoselect command sequence is a read cycle. Data bits DQ15-DQ8 are don’t care. See the Autoselect Command Sequence section for more information.
9. The data is 99h for factory locked and 19h for not factory locked. 10. The data is 00h for an unprotected sector and 01h for a protected sector. 11. The Unlock Bypass command is required prior to the UnlockBypass Program command. 12. The Unlock Bypass Reset command is required to return to the read mode when the device is in the unlock bypass mode. 13. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 14. The Erase Resume command is valid only during the Erase Suspend mode. 15. Command is valid when device is ready to read array data or when device is in autoselect mode.
ES29LV320E
23
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AUTOSELECT COMMAND
The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected, including information about factorylocked or customer lockable version.
Identifier Code
Manufacturer ID Device ID
SECURITY SECTOR COMMAND
In the ES29LV320 device, the security sector region (256 bytes) provides a secured data area containing a random, sixteen-byte electronic serial number(ESN) or customer’s security codes. The security sector region can be accessed by issuing the three-cycle Enter Security Sector command sequence. The device continues to access the security sector region until the system issues the four-cycle Exit Security Sector command sequence. The Exit Security Sector command sequence returns the device to normal operation. Table 9 shows the address and data requirements for both command sequences. Note that the accelerated programming function by WP#ACC and unlock bypass mode are not available when the device has entered the security sector. Refer to the Fig. 7 for the security sector operation.
Address
00h 01h
Data
4Ah F6(T), F9h(B) 99 / 19 00 / 01
Security Sector Factory Protect Sector Group Protect Verify
03h (SA)02h
Table 9 shows the address and data requirements. This method is an alternative to “A9 high-voltage method” shown in Table 2, which is intended for PROM programmers and requires VID on address pin A9. The autoselect command sequence may be written to an address within sector that is either in the read mode or erase-suspend-read mode. The auto-select command may not be written while the device is actively programming or erasing. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the autoselect command. The device then enters the autoselect mode. The system may read at any address any number of times without initiating another autoselect command sequence. Once after the device enters the auto-select mode, the manufacture ID code ( 4Ah ) can be accessed by one of two ways. Just one read cycle ( with A6, A1 and A0 = 0 ) can be used. Or four consecutive read cycles ( with A6 = 1 and A1, A0 = 0 ) for continuation codes (7Fh) and then another last cycle for the code (4Ah) (with A6, A1 and A0 = 0) can be used for reading the manufacturer code.
- 4Ah (One-cycle read) - 7Fh 7Fh 7Fh 7Fh 4Ah (Five-cycle read)
Read Mode
Enter Security Sector Command
Program, Erase or Protection
Exit Security Sector Command
Read Mode
Figure 7. Security Sector Operation
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend).
ES29LV320E
24
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
BYTE / WORD PROGRAM
The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 9 shows the address and data requirements for the byte program command sequence. Note that the autoselect, commands related with the security sector, and CFI modes are unavailable while a programming operation is in progress.
Program Status Bits : DQ7, DQ6 or RY/BY#
When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to the Write Operation Status section Table 10 for information on these status bits.
Any Commands Ignored during Programming Operation
Any commands written to the device during the Embedded Program algorithm are ignored. Note that a hardware reset can immediately terminates the program operation. The program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity.
Programming from “0” back to “1”
Programming is allowed in any sequence and across sector boundaries. But a bit cannot be programmed from “0” back to a ”1”. Attempting to do so may cause the device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0”. Only erase operations can convert a “0” to a “1”
START
Write Program Command Sequence
Embedded Program algorithm in progress
Data Poll from System
Unlock Bypass
In the ES29LV320 device, an unlock bypass program mode is provided for faster programming operation. In this mode, two cycles of program command sequences can be saved. To enter this mode, an unlock bypass enter command should be first written to the system. The unlock bypass enter command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then enters the unlock-bypass program mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program set-up command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 9 shows the requirements for the command sequence.
No Verify Data? Yes No Increment Address Last Address? Yes Programming Completed
Note: See Table 9 for program command sequence
Figure 8. Program Operation
ES29LV320E
25
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
During the unlock-bypass mode, only the unlockbypass program and unlock-bypass reset commands are valid. To exit the unlock-bypass mode, the system must issue the two-cycle unlock-bypass reset command sequence. The first cycle must contain the data 90h. The second cycle need to only contain the data 00h. The device then returns to the read mode.
- Unlock Bypass Enter Command - Unlock Bypass Reset Command - Unlock Bypass Program Command
Table 9 shows the address and data requirements for the chip erase command sequence. Note that the autoselect, security sector, and CFI modes are unavailable while an erase operation is in progress
Erase Status Bits : DQ7, DQ6, DQ2, or RY/BY#
When the Embedded Erase algorithm is complete, the device returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write Operation Status section Table 10 for information on these status bits.
Unlock Bypass Program during WP#/ACC Accelerated Program Mode
The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically enters the unlock bypass mode. The system may then write the two-cycle unlock bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH in any operation other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Fig. 8 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Fig. 22 for timing diagrams.
Commands Ignored during Erase Operation
Any command written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once the device has returned to reading array data. to ensure data integrity. Fig. 9 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Fig. 23 section for timing diagrams.
SECTOR ERASE COMMAND
By using a sector erase command, a single sector or multiple sectors can be erased. The sector erase command is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 9 shows the address and data requirements for the sector erase command sequence. Note that the autoselect, security sector, and CFI modes are unavailable while an erase operation is in progress.
CHIP ERASE COMMAND
To erase the entire memory, a chip erase command is used. This command is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The chip erase command erases the entire memory including all other sectors except the protected sectors, but the internal erase operation is performed on a single sector base.
Embedded Sector Erase Algorithm
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings these operations.
Embedded Erase Algorithm
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. 26
ES29LV320E
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Sector Erase Time-out Window and DQ3
After the command sequence is written, a sector erase time-out of 50us occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50us, otherwise the last address and command may not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be reenabled after the last Sector Erase command is written. The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to the read mode. The system must rewrite the command sequence and any additional addresses and commands.
Status Bits : DQ7,DQ6,DQ2, or RY/BY#
When the Sector Erase Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing sector. The system can determine the status of the erase operation by reading DQ7,DQ6,DQ2, or RY/BY# in the erasing sector. Refer to the Write Operation Status section Table 10 for information on these status bits.
Valid Command during Sector Erase
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Fig. 9 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Fig. 23 section for timing diagrams.
ERASE SUSPEND/ERASE RESUME
START
Write Erase Command Sequence (Notes 1,2)
An erase operation is a long-time operation so that two useful commands are provided in the ES29LV320 device Erase Suspend and Erase Resume Commands. Through the two commands, erase operation can be suspended for a while and the suspended operation can be resumed later when it is required. While the erase is suspended, read or program operations can be performed by the system.
Embedded Erase algorithm in progress
Data Poll to Erasing Bank from System
Erase Suspend Command, (B0h)
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50us time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20us to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the timeout period and suspends the erase operation. 27
No Data = FFh? Yes Erasure Completed
Notes:
1. See Table 9 for erase command sequence 2. See the section on DQ3 for information on the sector erase timer
Figure 9. Erase Operation
ES29LV320E
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Read and Program during Erase-SuspendRead Mode
After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section for information on these status bits (Table 10). After an erase-suspended program operation is complete, the device returns to the erase-suspendread mode. The system can determine the status for the program operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation. Refer to the Write Operation Status section for more information.
Autoselect during Erase-Suspend- Read Mode
In the erase-suspend-read mode, the system can also issue the autoselected command sequence. Refer to the Autoselect Mode and Autoselect Command Sequence section for details (Table 9).
Erase Resume Command
To resume the sector erase operation, the system must write the Erase Resume command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing.
ES29LV320E
28
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
COMMAND DIAGRAM
PA/PD Done Program
20 Unlock Bypass 90
A0 80
AA
90 88 55 Autoselect
Security Sector AA
55
55 10 90 AA Chip Erase 00 Done Read SA/30 50us SA/30
98
F0 CFI F0
00 98
Done
Sector Erase
Resume 30
B0 Suspend
Erasesuspend Read
Figure 10. Command Diagram
ES29LV320E
29
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
WRITE OPERATION STATUS
In the ES29LV320 device, several bits are provided to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, DQ7 and RY/BY#. Table 10 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/ BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed.
Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7.
Erase on the Protected Sectors
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 1.8us, then the device returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid.
DQ7 (DATA# POLLING)
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence.
Data# Polling Algorithm
Just prior to the completion of an Embedded Program or Ease operation, DQ7 may change asynchronously with DQ0-DQ6 while Output Enable(OE#) is asserted low. That is, this device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ0-DQ7 will appear on successive read cycles. Table 10 shows the outputs for Data# Polling on DQ7. Fig. 11 shows the Data# Polling algorithm. Fig. 24 in the AC Characteristics section shows the Data# Polling timing diagram.
During Programming
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 250ns, then the device returns to the read mode.
During Erase
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded
ES29LV320E
30
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
START Read DQ7-DQ0 Addr = VA
DQ7 = Data ? No No DQ5 = 1 ? Yes Read DQ7-DQ0 Addr = VA
Yes
Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence ( prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7(see the subsection on DQ7:Data# Polling). DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 10 shows the outputs for Toggle Bit I on DQ6. Fig. 12 shows the toggle bit algorithm. Fig. 25 in the “AC Characteristics” section shows the toggle bit timing diagrams. Fig. 26 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2 : (Toggle Bit II).
Yes DQ7 = Data ? No FAIL PASS
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address in any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5
Figure 11. Data# Polling Algorithm
Toggling on the Protected Sectors
RY/BY# ( READY/BUSY# )
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an opendrain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to Vcc. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in the erase-suspend-read mode. Table 10 shows the outputs for RY/BY#.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 1.8us, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. If a program address falls within a protected sector, DQ6 toggles for approximately 250ns after the program command sequence is written, then returns to reading array data.
DQ2 ( TOGGLE BIT II )
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence DQ2
DQ6 ( TOGGLE BIT I )
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the
ES29LV320E
31
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erasesuspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 10 to compare outputs for DQ2 and DQ6. Fig. 12 shows the toggle bit algorithm in flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the DQ6: Toggle Bit I subsection. Fig. 25 shows the toggle bit timing diagram. Fig. 26 shows how differently DQ2 operates compared with DQ6.
START
Read DQ7-DQ0
Read DQ7-DQ0
Toggle Bit = Toggle ? Yes No DQ5 = 1 ? Yes Read DQ7-DQ0 Twice
No
Reading Toggle Bits DQ6/DQ2
Refer to Fig. 12 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7-DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7-DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, this system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Fig. 12).
Toggle Bit = Toggle ? Yes Program/Erase Operation Not Complete, Write Reset Command
No
Program/Erase Operation Complete
Note:
The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1”. See the subsections on DQ6 and DQ2 for more information.
Figure 12. Toggle Bit Algorithm
ES29LV320E
32
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
DQ5 ( EXCEEDED TIMING LIMITS )
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1”, indicating that the program or erase cycle was not successfully completed. The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0” Only an erase operation can change a “0” back to a “1”. Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a ”1”. Under both these conditions, the system must write the reset command to return to the read mode.
DQ3 ( SECTOR ERASE TIMER )
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase time does not apply to the chip erase command.)
If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a”1”. If the time between additional sector erase commands from the system can be assumed to be less than 50us, the system need not monitor DQ3. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1”, the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erasure operation is complete. If DQ3 is “0”, the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. In Table 10, DQ3 status operation is well defined and summarized with other status bits, DQ7, DQ6, DQ5, and DQ2.
Table 10. Write Operation Status
Status
Standard Mode Embedded Program Algorithm Embedded Erase Algorithm Erase Suspended Sector Non-Erase Suspended Sector
DQ7 (Note 2)
DQ7# 0 1 Data DQ7#
DQ6
Toggle Toggle No toggle Data Toggle
DQ5 (Note 1)
0 0 0 Data 0
DQ3
N/A 1 N/A Data N/A
DQ2 (Note 2)
No toggle Toggle Toggle Data N/A
RY/ BY#
0 0 1 1 0
Erase Suspend Mode
Erase-SuspendRead
Erase-Suspend-Program
Notes :
1. DQ5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
ES29LV320E
33
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature Plastic Packages ..............................................-65oC to +150oC Ambient Temperature with Power Applied ...........................................-65oC to +125oC
20ns +0.8V Vss-0.5V Vss-2.0V
20ns
Voltage with Respect to Ground 20ns
Vcc (Note 1) ..........................................................-0.5V to +4.0V A9, OE#, RESET# and WP#/ACC (Note 2) ......-0.5V to +12.5V All other pins (Note 1) ...................................-0.5V to Vcc + 0.5V
Negative Overshoot
Output Short Circuit Current (Note 3) ................. 200mA 20ns Notes:
1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, input or I/O pins may overshoot Vss to -2.0V for periods of up to 20ns. Maximum DC voltage on input or I/O pins is Vcc+0.5V. See Fig. 13. During voltage transition, input or I/O pins may overshoot to Vcc+2.0V for periods up to 20ns. See Fig. 13. 2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP# /ACC is -0.5V. During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot Vss to -2.0V for periods of up to 20ns. See Fig. 13. Maximum DC input voltage on pin A9 is +12.5V which may overshoot to +14.0V for periods up to 20ns. Maximum DC input voltage on WP#/ACC is +9.5V which may overshoot to +12.0V for periods up to 20ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this datasheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
20ns
Vcc+2.0V
Vcc+0.5V 2.0V 20ns
Positive Overshoot
Figure 13. Maximum Overshoot Waveform
OPERATING RANGES
Industrial (I) Devices Ambient Temperature (TA).................................-40oC to +85oC Commercial Devices Ambient Temperature (TA)....................................0oC to +70oC Vcc Supply Voltages Vcc for all devices ............................................2.7V to 3.6V Operating ranges define those limits between which the functionality of the device is guaranteed.
ES29LV320E
34
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
DC CHARACTERISTICS
Table 11. CMOS Compatible
Parameter Symbol
ILI ILIT ILR ILO
Parameter Description
Input Load Current
Test Conditions
VIN=Vss to Vcc Vcc=Vcc max Vcc=Vcc max; A9=12.5V Vcc=Vcc max; RESET#=12.5V Vout=Vss to Vcc, Vcc=Vcc max 5MHz
Min
Typ
Max
+ 1.0
Unit
uA
A9 Input Load Current RESET# Input Load Current Output Leakage Current
35 35 + 1.0 10 2 10 2 15 15 15 15 16 4
uA uA uA
ICCI
Vcc Active Read Current (Notes 1,2)
CE#=VIL OE#=VIH, Byte mode CE#=VIL, OE#=VIH, Word mode
1MHz 5MHz 1MHz
mA 16 4 30 50 50 50 mA uA uA uA
ICC2 ICC3 ICC4 ICC5 VIL VIH VHH VID VOL VOH1
Vcc Active Write Current (Note 2,3) Vcc Standby Current (Note 2) Vcc Reset Current (Note 2) Automatic Sleep Mode (Notes2,4) Input Low Voltage Input High Voltage Voltage for WP#/ACC Sector Protect/Unprotect and Program Acceleration Voltage for Autoselect and Temporary Sector Unprotect Output Low Voltage
CE#=VIL, OE#=VIH, WE#=VIL CE#, RESET#= Vcc+0.3V RESET#=Vss + 0.3V VIH = Vcc + 0.3V VIL = Vss + 0.3V -0.5 0.7xVcc
0.8 Vcc+0.3
V V
Vcc = 3.0V + 10% Vcc = 3.0V + 10% IOL = 4.0 mA, Vcc = Vcc min IOH = -2.0mA, Vcc = Vcc min
11.5 11.5
12.5 12.5 0.45
V V V
0.85 Vcc V Vcc - 0.4 2.0 2.5 V
Output High Voltage VOH2 VLKO Low Vcc Lock-Out Voltage (Note 5) IOH = -100 uA, Vcc = Vcc min
Notes:
1. The Icc current listed is typically less than 2 mA/MHz, with OE# at VIH , Typical condition : 25oC, Vcc = 3V 2. Maximum ICC specifications are tested with Vcc = Vcc max. 3. Icc active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30ns. Typical sleep mode current is 15 uA. 5. Not 100% tested.
ES29LV320E
35
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
DC CHARACTERISTICS
Zero-Power Flash
25
Icc1 (Active Read current)
Supply Current in mA 20
Icc5 (Automatic Sleep Mode)
15
10
5
0
500
1000
1500
2000 Time in ns
2500
3000
3500
4000
Note: Addresses are switching at 1 MHz
Figure 14. Icc1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12 3.6V 10
2.7V 8 Supply Current in mA
6
4
2
0 1 2 3 Frequency in MHz 4 5
Note: T = 25oC
Figure 15. Typical Icc1 vs. Frequency
ES29LV320E
36
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
3.3V
Table 12. Test Specifications
2.7kΩ
Device Under Test Test Condition
Output Load
70
90
1TTL gate
CL
6.2kΩ
Output Load Capacitance, CL (including jig capacitance) Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels
30 pF
100pF 5ns
0.0V ~ 3.0 V 1.5V 1.5V
Figure 16. Test Setup
Note: Diodes are IN3064 or equivalent
Output timing measurement reference levels
Key To Switching Waveforms
WAVEFORM INPUTS
Steady Changing from H to L Changing from L to H Don’t Care, Any Change Permitted Does Not Apply Changing, State Unknown Center Line is High Impedance State (High Z)
OUTPUTS
3.0V Input 0.0V 1.5V Measurement Level 1.5V Output
Figure 17. Input Waveforms and Measurement Levels
ES29LV320E
37
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 13. Read-Only Operations
Parameter JEDEC Std.
tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tRC tACC tCE tOE tDF tDF tOH tOEH
Speed Options Description
Read Cycle Time(Note 1) Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High Z (Note 1) Output Enable to Output High Z (Note 1) Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Output Enable Hold Time (Note 1) Read Toggle and Data# Polling CE#,OE#=VIL OE#=VIL
Unit
Test Setup
Min Max Max Max Max Max Min Min Min
70
70 70 70 30 16 16 0 0 10
90
90 90 90 40 ns ns ns ns ns ns ns ns ns
Note : 1. Not 100% tested
tRC Address Address Stable tACC CE# tRH tRH tOE OE# tOEH WE# tCE tOH OUTPUTS High-Z High-Z Output Valid tDF
RESET#
RY/BY#
0V
Figure 18. Read Operation Timings
ES29LV320E
38
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 14. Hardware Reset ( RESET #)
Parameter JEDEC Std.
tReady tReady tRP tRH tRPD tRB
Description
RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) RESET# Pin Low (Not During Embedded Algorithms) to Read Mode (See Note) RESET# Pulse Width RESET High Time Before Read (See Note) RESET# Low to Standby Mode RY/BY# Recovery Time Max Max Min Min Min Min
All Speed Options
20 500 500 50 20 0
Unit
us ns ns ns us ns
Note : Not 100% tested
RY/BY#
0V
CE#,OE# tRH RESET# tRP tREADY
(A) Not During Embedded Algorithm
tREADY RY/BY# tRB
CE#,OE#
RESET# tRP
(B) During Embedded Algorithm
Figure 19. Reset Timings
39
Rev. 0A May 25, 2006
ES29LV320E
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 15. Word/Byte Configuration (BYTE#)
Parameter JEDEC Std.
tELFL/tELFH tFLQZ tFHQV
Description
CE# to BYTE# Switching Low or High BYTE# Switching Low to Output High Z BYTE# Switching High to Output Active Max Max Min
70
90
5 30
Unit
ns ns ns
70
90
CE#
OE#
BYTE# tELFL
BYTE# Switching Switching from word to byte mode
DQ0-DQ14
Data Output (DQ0-DQ14) DQ15 Output
Data Output (DQ0-DQ7) Address Input
DQ15/A-1
tELFH
tFLQZ
BYTE#
BYTE# Switching Switching from byte to word mode
DQ0-DQ14
Data Output (DQ0-DQ7) Address Input
Data Output (DQ0-DQ14) DQ15 Output
DQ15/A-1
tFHQV
Figure 20. BYTE# Timing for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET (tAS)
tHOLD (tAH)
Note : Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 21. BYTE# Timing for Write Operations
ES29LV320E
40
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 16. Erase and Program Operations
Parameter JEDEC
tAVAV tAVWL
Std.
tWC tAS tASO Write Cycle Time (Note 1) Address Setup Time
Description
Min Min Min Min Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Typ Min Min Max
70
70 0 15 45 0 35 0 20 0 0 0 30 30 0 6 8 4 0.7 50 0 90
90
90
Unit
ns ns ns
Address Setup Time to OE# low during toggle bit polling Address Hold Time Address Hold Time From CE# or OE# high during toggle bit polling Data Setup Time Data Hold Time Output Enable High during toggle bit polling Read Recovery Time Before Write (OE# High to WE# Low) CE# Setup Time CE# Hold Time Write Pulse Width Write Pulse Width High Latency Between Read and Write Operations Byte
tWLAX
tAH tAHT
45
ns ns
tDVWH tWHDX
tDS tDH tOEPH
45
ns ns ns ns ns ns
tGHWL tELWL tWHEH tWLWH tWHDL
tGHWL tCS tCH tWP tWPH tSR/W
35
ns ns ns
tWHWH1 tWHWH1 tWHWH2
tWHWH1 tWHWH1 tWHWH2 tVCS tRB tBUSY
Programming Operation (Note 2)
Word
us us sec us ns ns
Accelerated Programming Operation, Word or Byte (Note 2) Sector Erase Operation (Note 2) Vcc Setup Time (Note 1) Write Recovery Time from RY/BY# Program/Erase Valid to RY/BY# Delay
Notes:
1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information.
ES29LV320E
41
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data(last two cycles)
tWC Address 555h
tAS PA tAH PA PA
CE# tCH OE# tCS tWP WE# tWPH tDS tDH A0h PD tBUSY RY/BY# tVCS Status Dout tRB tWHWH1
DATA
Vcc
NOTES :
1. PA = program address, PD = program data, Dout is the true data at the program address. 2. Illustration shows device in word mode.
Figure 22. Program Operation Timings
ES29LV320E
42
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data
tWC Address 2AAh
tAS SA
555h for chip erase
tAH VA VA
CE# tCH OE# tCS tWP WE# tWPH tDS tDH
10h for chip erase
tWHWH2
DATA
55h
30h tBUSY
In Progress
Complete
tRB
RY/BY#
tVCS
Vcc
NOTES :
1. SA = sector address(for Sector Erase), VA = valid address for reading status data(see “Write Operation Status”). 2. These waveforms are for the word mode.
Figure 23. Chip/Sector Erase Operation Timings
ES29LV320E
43
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
tRC Address VA tACC tCE CE# tCH OE# tOEH tDF tOE VA VA
WE# DQ7 DQ0-DQ6 tBUSY RY/BY#
tOH
HIGH-Z
Complement Complement True Valid Data
HIGH-Z
Status Data Status Data True Valid Data
NOTE : VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle
Figure 24. Data# Polling Timings (During Embedded Algorithms)
ES29LV320E
44
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
tAHT Address tASO CE# tOEH WE# tOEPH OE# tDH DQ6/DQ2 RY/BY#
Valid Data Valid Status
tAS
tAHT
tCEPH
tOE
Valid Status Valid Status Valid Data
(first read)
(second read)
(stops toggling)
NOTE : VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 25. Toggle Bit Timings (During Embedded Algorithms)
Enter Embedded Erasing
Enter Suspend
Enter Erase Suspend Program Erase Suspend Program
Erase Resume
WE#
Erase Erase Suspend Read Erase Suspend Read Erase Erase Complete
DQ6 DQ2
NOTE : DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6.
Figure 26. DQ2 vs. DQ6
ES29LV320E
45
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 17. Temporary Sector Unprotect
Parameter JEDEC Std.
tVIDR tVHH tRSP tRRB
Description
VID Rise and Fall Time (See Note) VHH Rise and Fall Time (See Note) RESET# Setup Time for Temporary Sector Unprotect RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect Min Min Min Min
All Speed Options
500 250 4 4
Unit
ns ns us us
Note: Not 100% tested.
VID
RESET#
Vss,VIL, or VIH
tVIDR
Program or Erase Command Sequence
tVIDR
CE#
WE# tRSP RY/BY# tRRB
Figure 27. Temporary Sector Unprotect Timing Diagram
VHH
WP#/ACC
VIL or VIH
VIL or VIH
tVHH
tVHH
Figure 28. Accelerated Program Timing Diagram
ES29LV320E
46
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
VID VIH RESET#
SA,A6, A1,A0 DQ 60h
1us
Valid* Sector/Sector Group Protect or Unprotect
Valid*
Valid*
Verify
60h
Sector/Sector Group Protect : 150us, Sector/Sector Group Unprotect: 15ms
40h
Status
CE#
WE# OE#
* For sector protect, A6=0,A1=1,A0=0 For sector unprotect, A6=1,A1=1,A0=0
Figure 29. Sector/Sector Group Protect & Unprotect Timing Diagram
ES29LV320E
47
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 18. Alternate CE# Controlled Erase and Program Operations
Parameter JEDEC
tAVAV tAVWL tELAX tDVEH tEHDX tGHEL tWLEL tEHWH tELEH tELEL tWHWH1 tWHWH1 tWHWH2
Std.
tWC tAS tAH tDS tDH tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH1 tWHWH2
Description
Write Cycle Time( Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time CE# Pulse Width CE# Pulse Width High Byte Programming Operation (Note 2) Word Accelerated Programming Operation, Word or Byte (Note 2) Sector Erase Operation (Note 2) Typ Typ Typ Min Min Min Min Min Min Min Min Min Min Typ
70
70 0 45 35 0 0 0 0 30 30 5 7 4
90
90
Unit
ns ns
45 45
ns ns ns ns ns ns
35
ns ns
us us sec
0.7
Notes :
1. Not 100% tested 2. See the “Erase And Programming Performance” section for more information.
ES29LV320E
48
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
555 for program 2AA for erase
PD for program SA for sector erase 555 for chip erase
Data Polling
Address tWC WE# tGHEL OE# tCP CE# tWS tDS DATA tRH RESET# RY/BY#
A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase
PA tAS tWH tAH
tWHWH1 or 2 tCPH tDH
DQ7# DOUT
tBUSY
NOTES :
1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data 3. DQ7# is the complement of the data written to the device. Dout is the data written to the device. 4. Waveforms are for the word mode.
Figure 30. Alternate CE# Controlled Write(Erase/Program) Operation Timings
ES29LV320E
49
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Table 19. AC CHARACTERISTICS
Parameter
tOE tVIDR tWPP1 tWPP2 tOESP tCSP tST
Description
Output Enable to Output Delay Voltage Transition Time Write Pulse Width for Protection Operation Write Pulse Width for Unprotection Operation OE# Setup Time to WE# Active CE# Setup Time to WE# Active Voltage Setup Time Max Min Min Min Min Min Min 30
Value
40 500 150 15 4 4 4
Unit
ns ns us ms us us us
A A A A tVIDR VID A tST VID OE# tOESP tWPP1
SAx
SAy
tVIDR
WE# tCSP CE# DQ RESET# Vcc
tST
tOE
0x01
Figure 31. Sector Protection timings (A9 High-Voltage Method)
ES29LV320E
50
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
AC CHARACTERISTICS
A A A A tVIDR VID A tST VID OE# tOESP tWPP2 tST tCSP CE# DQ RESET# Vcc tOE tVIDR
SA0
SA1
WE#
0x00
NOTE : It is recommended to verify for all sectors.
Figure 32. Sector Unprotection timings (A9 High-Voltage Method)
ES29LV320E
51
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Table 20. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time Chip Erase Time Byte Program Time Accelerated Byte/Word Program Time Word Program Time Byte Mode Chip Program Time (Note 3) Word Mode
Typ (Note 1)
0.7 50 6 4 8 25 17
Max (Note 2)
15
Unit
sec sec
Comments
Excludes 00h programming prior to erasure (Note 4)
150 120 210 76 50
us us us sec Exclude system level overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25oC, Vcc = 3.0V, 10,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90oC, Vcc = 2.7V, 100,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two-or-four-bus-cycle sequence for the program command. See Table 9 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
Table 21. LATCHUP CHARACTERISTICS
Description
Input voltage with respect to Vss on all pins except I/O pins (including A9, OE#, and RESET#) Input voltage with respect to Vss on all I/O pins Vcc Current - 1.0V - 1.0V - 100mA
Min
12.5V
Max
Vcc + 1.0V +100mA
Note: Includes all pins except Vcc. Test conditions: Vcc = 3.0 V, one pin at a time
Table 22. TSOP AND BGA PACKAGE CAPACITANCE
Parameter Symbol
CIN
Parameter Description
Input Capacitance VIN = 0
Test Setup
TSOP FBGA TSOP
Typ
6 4.2 8.5 5.4 7.5 3.9
Max
7.5 5.0 12 6.5 9 4.7
Unit
pF pF pF pF pF pF
COUT
Output Capacitance
VOUT = 0
FBGA TSOP
CIN2
Control Pin Capacitance
VIN = 0
FBGA
Notes:
1. Sampled, not 100% tested 2. Test conditions TA = 25oC, f=1.0MHz.
Table 23. DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time 125oC 20 Years
Test conditions
150oC
Min
10
Unit
Years
ES29LV320E
52
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
PHYSICAL DIMENSIONS 48-Pin Standard TSOP (measured in millimeters)
0.10 C
2
1 -AE5
A2
SEE DETAIL B
N
-B-
e
N --2
9
N+1 --2
D1 D
5 4
A1 -CSEATING PLANE
0.08MM (0.0031”) M C A-B S
B A B
b
67
WITH PLATING c1 BASE METAL
SEE DETAIL A
7
(c)
b1 R c GAUGE PLANE
SECTION B-B
PARALLEL TO SEATING PLANE
θ°
L
0.25MM (0.0098”) BSC
e/2
-X-
DETAIL A DETAIL B
Package JEDEC Symbol A A1 A2 b1 b c1 c D D1 E e L 0.50 MIN 0.05 0.95 0.17 0.17 0.10 0.10 19.80 18.30 11.90 TS 48 MO-142 (B) DD NOM 1.00 0.20 0.22 20.00 18.40 12.00 0.50 BASIC 0.60 0.70 MAX 1.20 0.15 1.05 0.23 0.27 0.16 0.21 20.20 18.50 12.10
X = A OR B
NOTES:
1. Controlling dimensions are in millimeters(mm). (Dimensioning and tolerancing conforms to ANSI Y14.5M-1982) 2. Pin 1 identifier for standard pin out (Die up). 3. Pin 1 identifier for reverse pin out (Die down): Ink or Laser mark 4. To be determined at the seating plane. The seating plane is defined as the plane of contact that is made when the package leads are allowed to rest freely on a flat horizontal surface. 5. Dimension D1 and E do not include mold protrusion. Allowable mold protrusion is 0.15mm (0.0059”) per side. 6. Dimension b does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm (0.0031”) total in excess of b dimension at max. material condition. Minimum space between protrusion and an adjacent lead to be 0.07mm (0.0028”). 7. These dimensions apply to the flat section of the lead between 0.10mm (0.0039”) and 0.25mm (0.0098”) from the lead tip. 8. Lead coplanarity shall be within 0.10mm (0.004”) as measured from the seating plane. 9. Dimension “e” is measured at the centerline of the leads.
θ
R N
0°
0.08 -
3°
5°
0.20
48
ES29LV320E
53
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
PHYSICAL DIMENSIONS 48-Ball FBGA (6 x 8 mm)
0.20 (4x)
D
A
D1
H 6
GF
E
D
C
B
A
7
5
e
E
SE
4
E1
3 2 1
6 A1 CORNER INDEX MARK 11 B
b
0.15 M Z A B 0.08 M Z
SD
7 PIN 1 ID.
10
// 0.25 Z A2 A
0.08 Z
A1
Z
PACKAGE JEDEC SYMBOL A A1 A2 D E D1 E1 MD ME N b e SD / SE 0.30 0.21 0.7 MIN
xFBD 048 N/A 6.00 mm x8.00 mm PACKAGE NOM MAX 1.10 0.25 0.76 8.00 BSC 6.00 BSC 5.60 BSC 4.00 BSC 8 6 48 0.35 0.40 0.80 BSC 0.40 BSC 0.29 0.82 NOTE OVERALL THICK NESS BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE BALL FOOTPRINT BALL FOOTPRINT ROW MATRIX SIZED DIRECTION ROW MATRIX SIZED DIRECTION TOTAL BALL COUNT BALL DIAMETER BALL PITCH SOLDER BALL PLACEMENT
NOTES: 1. Dimensioning and tolerancing per ASME Y14.5M-1994 2. All dimensions are in millimeters. 3. Ball position designation per JESD 95-1, SPP-010. 4. e represents the solder ball grid pitch. 5. Symbol “MD” is the ball row matrix size in the “D” direction. Symbol “ME” is the ball column matrix size in the “E” direction. N is the maximum number of solder balls for matrix size MD X ME. 6. Dimension “b” is measured at the maximum ball diameter in a plane parallel to datum Z. 7. SD and SE are measured with respect to datums A and B and define the position of the center solder ball in the outer row. When there is an odd number of solder balls in the outer row parallel to the D or E dimension, respectively, SD or SE = 0.000 when there is an even number of solder balls in the outer row, SD or SE = e/2 8. “X” in the package variations denotes part is outer qualification. 9. “+” in the package drawing indicate the theoretical center of depopulated balls. 10. For package thickness A is the controlling dimension. 11. A1 corner to be indentified by chamfer, ink mark, metallized markings indention or other means.
ES29LV320E
54
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
ORDERING INFORMATION
Standard Products
ESI standard products are available in several package and operating ranges. The order number (Valid Combination) is formed by a combination of the following:
ES
29
LV
320 X
X - XX
X
XXX
TEMPERATURE RANGE
Blank : Commercial (0oC to + 70oC) I : Industrial (- 40oC to + 85oC)
Pb-free
C G : : Pb product Pb-free product
PACKAGE TYPE
T W : : Standard TSOP (48-pin) FBGA (48-ball)
VOLTAGE RANGE
Blank : 2.7V ~ 3.6V
SPEED OPTION
70 : 70ns 90 : 90ns
SECTOR ARCHITECTURE
Blank : Uniform sector T : Top sector B : Bottom sector
TECHNOLOGY
D : 0.18um E : 0.18um (2nd Gen.) F : 0.13um
DENSITY & ORGANIZATION
400 : 4M ( x8 / x16) 160 : 16M ( x8 / x16) 640 : 64M ( x8 / x16) 800 : 8M ( x8 / x16) 320 : 32M ( x8 / x16)
POWER SUPPLY AND INTERFACE
F : 5.0V LV : 3.0V DL : 3.0V, Dual Bank DS : 1.8V, Dual Bank BDS : 1.8V, Burst mode, Dual Bank
COMPONENT GROUP
29 : Flash Memory
EXCEL SEMICONDUCTOR
ES29LV320E
55
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Product Selection Guide
Industrial Device
Part No.
ES29LV320ET-70TGI ES29LV320ET-70TCI ES29LV320EB-70TGI ES29LV320EB-70TCI ES29LV320ET-90TGI ES29LV320ET-90TCI ES29LV320EB-90TGI ES29LV320EB-90TCI
Speed Vcc
70ns 70ns 70ns 70ns 90ns 90ns 90ns 90ns 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V
Boot Sector Package
Top Top Bottom Bottom Top Top Bottom Bottom 48-pin TSOP 48-pin TSOP 48-pin TSOP 48-pin TSOP 48-pin TSOP 48-pin TSOP 48-pin TSOP 48-pin TSOP
Pb
Pb-free Pb-free Pb-free Pb-free -
Ball Pitch/Size
Body Size
ES29LV320ET-70WGI ES29LV320ET-70WCI ES29LV320EB-70WGI ES29LV320EB-70WCI ES29LV320ET-90WGI ES29LV320ET-90WCI ES29LV320EB-90WGI ES29LV320EB-90WCI
70ns 70ns 70ns 70ns 90ns 90ns 90ns 90ns
2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V
Top Top Bottom Bottom Top Top Bottom Bottom
48-ball FBGA 48-ball FBGA 48-ball FBGA 48-ball FBGA 48-ball FBGA 48-ball FBGA 48-ball FBGA 48-ball FBGA
Pb-free Pb-free Pb-free Pb-free -
0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm
6mm x 8mm 6mm x 8mm 6mm x 8mm 6mm x 8mm 6mm x 8mm 6mm x 8mm 6mm x 8mm 6mm x 8mm
ES29LV320E
56
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Product Selection Guide
Commercial Device
Part No.
ES29LV320ET-70TG ES29LV320ET-70TC ES29LV320EB-70TG ES29LV320EB-70TC ES29LV320ET-90TG ES29LV320ET-90TC ES29LV320EB-90TG ES29LV320EB-90TC
Speed Vcc
70ns 70ns 70ns 70ns 90ns 90ns 90ns 90ns 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V
Boot Sector Package
Top Top Bottom Bottom Top Top Bottom Bottom 48-pin TSOP 48-pin TSOP 48-pin TSOP 48-pin TSOP 48-pin TSOP 48-pin TSOP 48-pin TSOP 48-pin TSOP
Pb
Pb-free Pb-free Pb-free Pb-free -
Ball Pitch/Size
Body Size
ES29LV320ET-70WG ES29LV320ET-70WC ES29LV320EB-70WG ES29LV320EB-70WC ES29LV320ET-90WG ES29LV320ET-90WC ES29LV320EB-90WG ES29LV320EB-90WC
70ns 70ns 70ns 70ns 90ns 90ns 90ns 90ns
2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V 2.7 - 3.6V
Top Top Bottom Bottom Top Top Bottom Bottom
48-ball FBGA 48-ball FBGA 48-ball FBGA 48-ball FBGA 48-ball FBGA 48-ball FBGA 48-ball FBGA 48-ball FBGA
Pb-free Pb-free Pb-free Pb-free -
0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm
6mm x 8mm 6mm x 8mm 6mm x 8mm 6mm x 8mm 6mm x 8mm 6mm x 8mm 6mm x 8mm 6mm x 8mm
ES29LV320E
57
Rev. 0A May 25, 2006
E S II ES
Excel Semiconductor inc.
Document Title
32M Flash Memory
Revision History
Revision Number Rev. 0A
Data May. 25, 2006 Initial Release Version.
Items
Excel Semiconductor Inc.
1010 Keumkang Hightech Valley, Sangdaewon1-Dong 133-1, Jungwon-Gu, Seongnam-Si, Kyongki-Do, Rep. of Korea. Zip Code : 462-807 Tel : +82-31-777-5060 Fax : +82-31-740-3798 / Homepage : www.excelsemi.com
The attached datasheets are provided by Excel Semiconductor.inc (ESI). ESI reserves the right to change the specifications and products. ESI will answer to your questions about device. If you have any questions, please contact the ESI office.
ES29LV320E
58
Rev. 0A May 25, 2006
工商网监
湘ICP备2023018690号
