1N5239B

1N5226B - 1N5257B Series 1N5226B - 1N5257B Series Half Watt Zeners Absolute Maximum Ratings* Parameter Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16” from case for 10 seconds) Total Device Dissipation Derate above 75°C Surge Power** TA = 25°C unless otherwise noted Tolerance: B = 5% Value -65 to +200 + 200 + 230 500 4.0 10 Units °C °C °C mW mW/°C W *These ratings are limiting values above which the serviceability of the diode may be impaired. **Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. DO-35 Electrical Characteristics Device 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B TA = 25°C unless otherwise noted VZ (V) 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 (Ω ) 28 24 23 22 19 17 11 7.0 7.0 5.0 6.0 8.0 8.0 10 17 22 30 ZZ @ IZT (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 ZZK (Ω ) 1,600 1,700 1,900 2,000 1,900 1,600 1,600 1,600 1,000 750 500 500 600 600 600 600 600 @ IZK (mA) 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 VR (V) 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 @ (µ A) 25 15 10 5.0 5.0 5.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 3.0 3.0 2.0 1.0 IR (%/°C) - 0.07 - 0.065 - 0.06 +/- 0.055 +/- 0.03 +/- 0.3 0.038 0.038 0.045 0.05 0.058 0.062 0.065 0.068 0.075 0.076 0.077 TC VF Foward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series NOTE: National preferred devices in BOLD ©1997 Fairchild Semiconductor Corporation 1N5200B Rev. A 1N5226B - 1N5257B Series Series Zener (continued) Electrical Characteristics Device 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B (continued) TA = 25°C unless otherwise noted VZ (V) 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 (Ω ) 13 15 16 17 19 21 23 25 29 33 35 41 44 49 58 ZZ @ IZT (mA) 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 ZZK (Ω ) 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 @ IZK (mA) 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 VR (V) 9.9 10 11 12 13 14 14 15 17 18 19 21 21 23 25 @ IR (nA) 500 100 100 100 100 100 100 100 100 100 100 100 100 100 100 (%/°C) 0.079 0.082 0.082 0.083 0.084 0.085 0.086 0.086 0.087 0.088 0.089 0.090 0.091 0.091 0.092 TC VF Foward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series NOTE: National preferred devices in BOLD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.