Zeners 1N5985B - 1N6025B
Zeners 1N5985B - 1N6025B
Absolute Maximum Ratings *
Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG Operating and Storage Temperature Range
TA = 25°C unless otherwise noted
Tolerance = 5%
Units mW mW/°C °C
Value 500 4.0 -65 to +200
* These ratings are limiting values above which the serviceability of the diode may be impaired.
DO-35 Glass case
COLOR BAND DENOTES CATHODE
Electrical Characteristics
VZ (V) @ IZ (Note 1) Device 1N5985B 1N5986B 1N5987B 1N5988B 1N5989B 1N5990B 1N5991B 1N5992B 1N5993B 1N5994B 1N5995B 1N5996B 1N5997B 1N5998B 1N5999B 1N6000B 1N6001B 1N6002B 1N6003B 1N6004B 1N6005B 1N6006B 1N6007B 1N6008B 1N6009B 1N6010B 1N6011B 1N6012B 1N6013B 1N6014B Min. 2.58 2.565 2.85 3.135 3.42 3.705 4.085 4.465 4.845 5.32 5.89 6.46 7.125 7.79 8.645 9.5 10.45 11.4 12.35 14.25 15.2 17.1 19 20.9 22.8 25.65 28.5 31.35 34.2 37.05 Typ. 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 Max. 2.52 2.835 3.15 3.465 3.78 4.095 4.515 4.935 5.355 5.88 6.51 7.14 7.875 8.61 9.555 10.5 11.55 12.6 13.65 15.75 16.8 18.9 21 23.1 25.2 28.35 31.5 34.65 37.8 40.95
TA=25°C unless otherwise noted
Test Current IZ (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2
Zener Impedance ZZ @ IZ (Ω) 100 100 95 95 90 90 88 70 50 25 10 8 7 7 10 15 18 22 25 32 36 42 48 55 62 70 78 88 95 130 ZZK @ IZK = 250µA (Ω) 1800 1900 2000 2200 2300 2400 2500 2200 2050 1800 1300 750 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800
leakage Current IR (mA) 100 75 50 25 15 10 5 3 2 2 1 1 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 1 1 1 1 1 1 1 1.5 2 3 4 5.2 6 6.5 7 8 8.4 9.1 9.9 11 12 14 15 17 18 21 23 25 27 30
IZM (mA)
(Note 2)
208 185 167 152 139 128 116 106 98 89 81 74 67 61 55 50 45 42 38 33 31 28 25 23 21 19 17 15 14 13
©2004 Fairchild Semiconductor Corporation
1N5985B - 1N6025B, Rev. C
Zeners 1N5985B - 1N6025B
Electrical Characteristics (Continued) TA=25°C unless otherwise noted
VZ (V) @ IZ (Note 1) Device 1N6015B 1N6016B 1N6017B 1N6018B 1N6019B 1N6020B 1N6021B 1N6022B 1N6023B 1N6024B 1N6025B Min. 40.85 44.65 48.45 53.2 58.9 64.6 71.25 77.9 86.45 95 104.5 Typ. 43 47 51 56 62 68 75 82 91 100 110 Max. 45.15 49.35 53.55 58.8 65.1 71.4 78.75 86.1 95.55 105 115.5 Test Current IZ (mA) 2 2 2 2 2 2 2 2 2 1 1 Zener Impedance ZZ @ IZ (Ω) 150 170 180 200 225 240 265 280 300 500 650 ZZK @ IZK = 250µA (Ω) 900 1000 1300 1400 1400 1600 1700 2000 2300 2600 3000 leakage Current IR (mA) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 33 36 39 43 47 52 56 62 69 76 84 IZM (mA)
(Note 2)
12 11 9.8 8.9 8 7.4 6.7 6.1 5.5 5 4.5
VF Forward Voltage = 1.2V Max @ IF = 200mA
Notes: 1. Zener Voltage (VZ) The zener voltage is measured with the device junction in the themal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8” lead length. 2. Maximum Zener Current Ratings (IZM) The maximum current handling capability on a worst case basis is limited by the actual zener voltage at the operation point and the power derating curve.
©2004 Fairchild Semiconductor Corporation
1N5985B - 1N6025B, Rev. C
Zeners 1N5985B - 1N6025B
Top Mark Information
Device 1N5985B 1N5986B 1N5987B 1N5988B 1N5989B 1N5990B 1N5991B 1N5992B 1N5993B 1N5994B 1N5995B 1N5996B 1N5997B 1N5998B 1N5999B 1N6000B 1N6001B 1N6002B 1N6003B 1N6004B 1N6005B 1N6006B 1N6007B 1N6008B 1N6009B 1N6010B 1N6011B 1N6012B 1N6013B 1N6014B 1N6015B 1N6016B 1N6017B 1N6018B 1N6019B 1N6020B 1N6021B 1N6022B 1N6023B 1N6024B 1N6025B Line 1 LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO Line 2 598 598 598 598 598 599 599 599 599 599 599 599 599 599 599 600 600 600 600 600 600 600 600 600 600 601 601 601 601 601 601 601 601 601 601 602 602 602 602 602 602 Line 3 5B 6B 7B 8B 9B 0B 1B 2B 3B 4B 5B 6B 7B 8B 9B 0B 1B 2B 3B 4B 5B 6B 7B 8B 9B 0B 1B 2B 3B 4B 5B 6B 7B 8B 9B 0B 1B 2B 3B 4B 5B Line 4 XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY XY
©2004 Fairchild Semiconductor Corporation
1N5985B - 1N6025B, Rev. C
Zeners 1N5985B - 1N6025B
Top Mark Information (Continued)
F
1st line: F - Fairchild Logo 2nd line: Device Name - 3rd to 5th characters of the device name. or 4th to 6th characters for BZXyy series 3rd line: Device Name - 6th to 7th characters of the device name. or Voltage rating for BZXyy series 4th line: Device Code or - Two Digit - Six Weeks Date Code. Date code plus or Two Digit - Six Weeks Date Code Large die identification plus Large die identification, “L”
522 9B XY
General Requirements:
1.0 Cathod Band 2.0 First Line: F - Fairchild Logo 3.0 Second Line: Device name - For 1Nxx series: 3rd to 5th characters of the device name. For BZxx series: 4th to 6th characters of the device name. 4.0 Third Line: Device name - For 1Nxx series: 6th to 7th characters of the device name. For BZXyy series: Voltage rating 5.0 Fourth Line: XY or XYL - Two Digit - Six Weeks Date Code Where: X represents the last digit of the calendar year Y represents the Six weeks numeric code L represents the Large die identification 6.0 Devices shall be marked as required in the device specification (PID or FSC Test Spec). 7.0 Maximum no. of marking lines: 4 8.0 Maximum no. of digits per line: 3 9.0 FSC logo must be 20 % taller than the alphanumeric marking and should occupy the 2 characters of the specified line. 10.0 Marking Font: Arial (Except FSC Logo) 11.0 First character of each marking line must be aligned vertically
©2004 Fairchild Semiconductor Corporation
1N5985B - 1N6025B, Rev. C
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Rev. I8
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