1N916A

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature Value 100 200 1.0 4.0 -65 to +200 175 Units V mA A A °C °C Tstg TJ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Max 1N/FDLL 914/A/B / 4148 / 4448 500 300 Units mW °C/W 2002 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode (continued) Electrical Characteristics Symbol VR VF TA = 25°C unless otherwise noted Parameter Breakdown Voltage Forward Voltage 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448 Test Conditions IR = 100 µA IR = 5.0 µA IF = 5.0 mA IF = 5.0 mA IF = 10 mA IF = 20 mA IF = 20 mA IF = 100 mA V R = 20 V VR = 20 V, TA = 150°C V R = 75 V VR = 0, f = 1.0 MHz VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V (60mA), Irr = 1.0 mA, RL = 100Ω Min 100 75 620 630 Max Units V V mV mV V V V V nA µA µA pF pF ns IR Reverse Current 720 730 1.0 1.0 1.0 1.0 25 50 5.0 2.0 4.0 4.0 CT Total Capacitance 1N916A/B/4448 1N914A/B/4148 Reverse Recovery Time trr Typical Characteristics 160 Ta=25 C o 120 T a= 25 C o Reverse Voltage, VR [V] 150 Reverse Current, IR [ nA] 100 80 140 60 130 40 120 20 110 1 2 3 5 10 20 30 50 100 0 10 R everse V oltage, V R [ V] 20 30 50 70 100 Reverse Current, IR [ uA] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 uA Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V 550 750 Ta= 25 C o T a= 25 C o Forward Voltage, VR [mV] 450 Forward Voltage, V [mV] F 500 700 650 400 600 350 550 300 500 250 450 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, IF [ uA] Forward Current, I F [ m A] Figure 3. Forward Voltage vs Forward Current VF - 1 to 100 uA Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode (continued) Typical Characteristics (continued) 1.6 900 Ta= 25 C o Forward Voltage, V F [mV] 800 Typical Ta= -40 C o Forward Voltage, VF [mV] 1.4 700 1.2 600 Ta= 25 C o 1.0 500 T a= +65 C o 400 0.8 300 0.6 10 20 30 50 100 200 300 500 800 0.01 0.03 0.1 0.3 1 3 10 Forward Current, IF [mA] Forward Current, IF [mA] Figure 5. Forward Voltage vs Forward Current VF - 10 to 800 mA Figure 6. Forward Voltage vs Ambient Temperature VF - 0.01 - 20 mA (-40 to +65 Deg C) 4.0 0.90 Reverse Recovery Time, t rr [ns] T A = 25 C o T a = 25 C o 3.5 Total Capacitance (pF) 0.85 3.0 2.5 0.80 2.0 1.5 0.75 0 2 4 6 8 10 12 14 1.0 10 20 30 40 50 60 REVERSE VOLTAGE (V) Reverse Recovery Current, Irr [mA] IF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms Figure 7. Total Capacitance Figure 8. Reverse Recovery Time vs Reverse Recovery Current 500 500 400 Power Dissipation, P [mW] D 400 DO-35 Current (mA) 300 300 200 IF( AV ) - A VE R AG SOT-23 E RE C 200 TIFIE D CU R RE 100 NT - mA 100 0 0 50 100 o 150 0 0 50 100 150 o 200 Ambient Temperature ( C) Temperature [ C] Figure 9. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA) Figure 10. Power Derating Curve TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST â FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC â OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench â QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER â UHC™ SMART START™ UltraFET â SPM™ VCX™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5