2N3703

2N3703 2N3703 PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 66. 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TST Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -30 -50 -5.0 -500 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics BV(BR)CEO BV(BR)CBO BV(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob fT Parameter Test Condition IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCB = -20V, IE = 0 VEB = -3.0V, IC = 0 VCE= -5.0V, IC = -50mA IC = -50mA, IB = -5.0mA VCE= -5.0V, IC = -50mA VCB = -10V, f = 1.0MHz IE = -50mA, VCE = -5.0V f = 20MHz 100 -0.6 30 Min. -30 -50 -5.0 -100 -100 150 -0.25 -1.0 12 V V pF MHz Typ. Max. Units V V V nA nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance On Characteristics * Small Signal Characteristics * Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 2N3703 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I