2N3704_02

厂商：
FAIRCHILD(仙童半导体)
封装：
描述：
2N3704_02 - NPN General Purpose Amplifier - Fairchild Semiconductor

数据手册：

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数据手册
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2N3704_02 数据手册

2N3704 2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TST Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 50 5.0 500 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics BV(BR)CEO BV(BR)CBO BV(BR)EBO ICBO IEBO hFE VCE(sat) VBE(on) Cob fT Parameter Test Condition IC = 10mA, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 20V, IE = 0 VEB = 3.0V, IC = 0 VCE= 5.0V, IC = 50mA IC= 100mA, IB = 5.0mA VCE= 2.0V, IC = 100mA VCB = 10V, f = 1.0MHz IC = 50mA, VCE = 2.0V 100 100 0.5 Min. 30 50 5.0 100 100 300 1.0 0.6 12 V V pF MHz Typ. Max. Units V V V nA nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance On Characteristics * Small Signal Characteristics * Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 2N3704 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FASTâ FASTr FRFET GlobalOptoisolator GTO HiSeC I2C Across the board. Around the world. The Power Franchise DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETâ VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I

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2N3704_02

1. 物料型号： - 型号为2N3704，由Fairchild Semiconductor生产。

2. 器件简介： - 该器件为NPN型通用放大器，设计用于作为通用放大器和开关使用，要求集电极电流达到300mA。源自Process 10，具体特性可参考PN100。

3. 引脚分配： - 1. 发射极（Emitter） - 2. 集电极（Collector） - 3. 基极（Base）

4. 参数特性： - 绝对最大额定值：包括集电极-发射极电压（VCEO）30V、集电极-基极电压（VCBO）50V、发射极-基极电压（VEBO）5.0V、集电极连续电流（Ic）500mA、工作和存储结温范围（TJTST）-55至+150°C。

5. 功能详解： - 电气特性：包括关断特性（如集电极-发射极击穿电压BV(BR)CEO、集电极-基极击穿电压BV(BR)CBO、发射极-基极击穿电压BV(BR)EBO、集电极截止电流CBO、发射极截止电流IEBO）和开启特性（如直流电流增益hFE、集电极-发射极饱和电压Vce(sat)、集电极-发射极导通电压VBE(on)）。 - 小信号特性：包括电流增益带宽积fT和输出电容Cob。

6. 应用信息： - 该器件适用于需要集电极电流达300mA的通用放大器和开关应用。

7. 封装信息： - 封装类型为TO-92，具体尺寸信息已提供，包括芯片尺寸、引脚间距等。

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