2N3905

2N3905 2N3905 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 5.0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3905 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 2 001 F airchild Semiconductor C orporation 2N3905, Rev A 2N3905 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current I C = 1.0 mA, IB = 0 I C = 10 µ A, I E = 0 I E = 10 µ A, IC = 0 VCE = 30 V, VOB = 3.0 V VCE = 30 V, VOB = 3.0 V 40 40 5.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 1.0 V, IC = 0.1 mA VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 50 mA VCE = 1.0 V, IC = 100 mA I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA 30 40 50 30 15 150 VCE(sat ) VBE( sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.65 0.25 0.40 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS Cob Cib hfe hfe hre hie hoe NF Output Capacitance Input Capacitance Small-Signal Current Gain Small-Signal Current Gain Voltage Feedback Ratio Input Impedance Output Impedance Noise Figure VCE = 5.0 V, IC = 100 µ A, RS = 1.0 kΩ, BW = 10 Hz to 15.7 KHz VCB = 5.0 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz I C = 10 mA, VCE = 20 V, f = 100 MHz I C = 1.0 mA, VCE =10 V, f = 1.0 KHz 2.0 50 0.1 0.5 1.0 200 5.0 8.0 40 5.0 x10 -4 4.5 10 pF pF kΩ µ mhos dB SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, ICS = 10 mA, I B1 = 1.0 mA ,VOB ( off ) = 3.0 V VCC = 3.0 V, ICS = 10 mA, I B1 = IB2 = 1.0 mA 35 35 200 60 ns ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 2N3905 PNP General Purpose Amplifier (continued) Typical Characteristics V CESAT - COLLECTOR EMITTER VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 250 V CE = 1 .0V 125 °C Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 0.2 0.15 0.1 125°C 25 °C β = 10 200 150 25 °C 100 - 40 °C 0.05 0 - 40 °C 50 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 1 10 100 I C - COLLECTOR CURRENT (mA) 200 VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 0.8 25 °C Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 °C β = 10 - 40 °C 0.6 0.4 0.2 0 125 °C 0.6 0.4 0.2 0 0.1 25 °C 125 °C V CE = 1V 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 1 10 I C - COLLECTOR CURRENT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) 100 V 10 CB Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 10 C obo = 25V CAPACITANCE (pF) 8 6 4 2 0 0.1 C ibo 1 0.1 0.01 25 50 75 100 TA - AMBIE NT TEMP ERATURE (° C) 125 1 REVERSE BIAS VOLTAGE (V) 10 2N3905 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Frequency 6 V CE = 5.0V NF - NOISE FIGURE (dB) 5 4 3 2 1 0 0.1 I C = 100 µA, R S = 200 Ω Noise Figure vs Source Resistance 12 NF - NOISE FIGURE (dB) 10 8 6 4 I C = 100 µA I C = 1.0 mA V CE = 5.0V f = 1.0 kHz I C = 1.0 mA, R S = 200 Ω I C = 100 µA, R S = 2.0 kΩ 2 0 0.1 1 10 f - FREQUENCY (kHz) 100 1 10 R S - SOURCE RESISTANCE ( kΩ ) 100 Switching Times vs Collector Current 500 ts Turn On and Turn Off Times vs Collector Current 500 t off Ic 10 t on 100 TIME (nS) 100 TIME (nS) t on I B1 = tf 10 I B1 = I B2 = Ic 10 tr 10 VBE(OFF) = 0.5V Ic t off I = I = B1 B2 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 100 1 1 I 10 - COLLECTOR CURRENT (mA) 100 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 2N3905 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) _4 ) Voltage Feedback Ratio 100 h ie - INPUT IMPEDANCE (k Ω) 10 Input Impedance VCE = 10 V f = 1.0 kHz h re - VOLTAGE FEEDBACK RATIO (x10 10 1 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 0.1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Output Admittance h oe - OUTPUT ADMITTANCE ( µ mhos) 1000 V CE = 10 V f = 1.0 kHz h fe - CURRENT GAIN 1000 500 Current Gain V CE = 10 V f = 1.0 kHz 200 100 50 100 20 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G