2N3906

2N3906 / MMBT3906 / PZT3906 2N3906 MMBT3906 C E C B TO-92 E SOT-23 Mark: 2A B PZT3906 C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 5.0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. © 1997 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 µ A, IE = 0 IE = 10 µ A, IC = 0 VCE = 30 V, VBE = 3.0 V VCE = 30 V, VBE = 3.0 V 40 40 5.0 50 50 V V V nA nA ON CHARACTERISTICS hFE DC Current Gain * IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 60 80 100 60 30 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.65 0.25 0.4 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure (except MMPQ3906) IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 100 µ A, VCE = 5.0 V, RS =1.0kΩ, f=10 Hz to 15.7 kHz 250 4.5 10.0 4.0 MHz pF pF dB SWITCHING CHARACTERISTICS (except MMPQ3906) td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA 35 35 225 75 ns ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued) Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3906 625 5.0 83.3 200 Max *PZT3906 1,000 8.0 125 Units mW mW/°C °C/W °C/W Symbol PD RθJA Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die Max **MMBT3906 350 2.8 357 MMPQ3906 1,000 8.0 125 240 Units mW mW/°C °C/W °C/W °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Typical Characteristics Typical Pulsed Current Gain vs Collector Current 250 Vce = 1V 125 °C VCESAT- COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.3 β = 10 0.25 0.2 25 °C 200 150 0.15 0.1 125 ºC 25 °C 100 - 40 °C 0.05 - 40 ºC 50 0.1 0.2 0.5 1 2 5 10 20 50 100 I C - COLLECTOR CURRENT (mA) 0 1 10 100 I C - COLLECTOR CURRENT (mA) 200 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 β = 10 - 40 ºC 25 °C 125 ºC Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 125 ºC - 40 ºC 25 °C 0.4 0.2 0 0.1 V CE = 1V 1 10 100 I C - COLLECTOR CURRENT (mA) P 66 200 1 10 I C - COLLECTOR CURRENT (mA) P 66 25 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Collector-Cutoff Current vs. Ambient Temperature I CBO- COLLECTOR CURRENT (nA) 100 V 10 CB Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 10 C obo = 25V CAPACITANCE (pF) 8 6 4 2 0 0.1 C ibo 1 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) 125 1 REVERSE BIAS VOLTAGE (V) 10 Noise Figure vs Frequency 6 V CE = 5.0V NF - NOISE FIGURE (dB) 5 4 3 2 1 0 0.1 I C = 100 µA, R S = 200Ω Noise Figure vs Source Resistance 12 NF - NOISE FIGURE (dB) 10 8 6 I C = 100 µA I C = 1.0 mA V CE = 5.0V f = 1.0 kHz I C = 1.0 mA, R S = 200Ω I C = 100 µA, R S = 2.0 kΩ 4 2 0 0.1 1 10 f - FREQUENCY (kHz) 100 1 10 R S - SOURCE RESISTANCE ( kΩ ) 100 Switching Times vs Collector Current 500 ts Turn On and Turn Off Times vs Collector Current 500 t off Ic t on I B1 = 10 100 TIME (nS) 100 TIME (nS) tf t on 10 I B1 = I B2 = 1 Ic 10 tr 10 V BE(OFF)= 0.5V t off I = I = B1 B2 Ic 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 100 1 10 I C - COLLECTOR CURRENT (mA) 100 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.