2N4126

2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 E SOT-23 Mark: ZF B PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 25 25 4.0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RθJC R θJ A TA= 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4126 625 5.0 83.3 200 Max *MMBT4126 350 2.8 357 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  2 001 Fairchild Semiconductor C orporation 2N4126/MMBT4126, Rev A 2N4126 / MMBT4126 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 µ A, IE = 0 IC = 10 µ A, IC = 0 VCB = 20 V, IE = 0 VEB = 3.0 V, IC = 0 25 25 4.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 2.0 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 50 mA, IB = 5.0 mA IC = 50 mA, IB = 5.0 mA 120 60 360 0.4 0.95 V V SMALL SIGNAL CHARACTERISTICS fT Cibo Ccb hfe NF Current Gain - Bandwidth Product Input Capacitance Collector-Base Capcitance Small-Signal Current Gain Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz VCB = 5.0 V, IE = 0, f = 100 kHz IC = 2.0 mA, VCE = 10 V, f = 1.0 kHz IC = 100 µ A, VCE = 5.0 V, RS=1.0 kΩ, f=10 Hz to 15.7 kHz 250 10 4.5 120 480 4.0 dB MHz pF pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. 2N4126 / MMBT4126 PNP General Purpose Amplifier (continued) Typical Characteristics V CESAT - COLLECTOR EMITTER VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 250 V CE = 1 .0V 125 °C Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 0.2 0.15 0.1 125°C 25 °C β = 10 200 150 25 °C 100 - 40 °C 0.05 0 - 40 °C 50 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 1 10 100 I C - COLLECTOR CURRENT (mA) 200 VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 0.8 25 °C Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 °C β = 10 - 40 °C 0.6 0.4 0.2 0 125 °C 0.6 0.4 0.2 0 0.1 25 °C 125 °C V CE = 1V 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 1 10 I C - COLLECTOR CURRENT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) 100 V 10 CB Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 10 C obo = 25V CAPACITANCE (pF) 8 6 4 2 0 0.1 C ibo 1 0.1 0.01 25 50 75 100 TA - AMBIE NT TEMP ERATURE (° C) 125 1 REVERSE BIAS VOLTAGE (V) 10 2N4126 / MMBT4126 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Frequency 6 V CE = 5.0V NF - NOISE FIGURE (dB) 5 4 3 2 1 0 0.1 I C = 100 µA, R S = 200 Ω Noise Figure vs Source Resistance 12 NF - NOISE FIGURE (dB) 10 8 6 4 I C = 100 µA I C = 1.0 mA V CE = 5.0V f = 1.0 kHz I C = 1.0 mA, R S = 200 Ω I C = 100 µA, R S = 2.0 kΩ 2 0 0.1 1 10 f - FREQUENCY (kHz) 100 1 10 R S - SOURCE RESISTANCE ( kΩ ) 100 Switching Times vs Collector Current 500 ts Turn On and Turn Off Times vs Collector Current 500 t off Ic 10 t on 100 TIME (nS) 100 TIME (nS) t on I B1 = tf 10 I B1 = I B2 = Ic 10 tr 10 VBE(OFF) = 0.5V Ic t off I = I = B1 B2 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 100 1 1 I 10 - COLLECTOR CURRENT (mA) 100 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 2N4126 / MMBT4126 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) _4 ) Voltage Feedback Ratio 100 h ie - INPUT IMPEDANCE (k Ω) 10 Input Impedance VCE = 10 V f = 1.0 kHz h re - VOLTAGE FEEDBACK RATIO (x10 10 1 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 0.1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Output Admittance h oe - OUTPUT ADMITTANCE ( µ mhos) 1000 V CE = 10 V f = 1.0 kHz h fe - CURRENT GAIN 1000 500 Current Gain V CE = 10 V f = 1.0 kHz 200 100 50 100 20 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G