2N5210

2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE TO-92 B E SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 50 50 4.5 100 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 2N5210 625 5.0 83.3 200 MMBT5210 350 2.8 357 Units mW mW/°C °C/W °C/W  2 002 Fairchild Semiconductor Corporation 2N5210, Rev B 2N5210/MMBT5210 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 0.1 mA, IE = 0 VCB = 35 V, IE = 0 VEB = 3.0 V, IC = 0 50 50 50 50 V V nA nA ON CHARACTERISTICS hFE DC Current Gain IC = 100 µ A, VCE = 5.0 V IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V* IC = 10 mA, IB = 1.0 mA IC = 1.0 mA, VCE = 5.0 V 200 250 250 600 VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage 0.7 0.85 V V SMALL SIGNAL CHARACTERISTICS fT Ccb hfe NF Current Gain - Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Noise Figure IC = 500 µ A,VCE = 5.0 V, f= 20 MHz VCB = 5.0 V, IE = 0, f = 100 kHz IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 20 µ A, VCE = 5.0 V, RS = 22 kΩ, f = 10 Hz to 15.7 kHz IC = 20 µ A, VCE = 5.0 V, RS = 10 kΩ, f = 1.0 kHz 30 4.0 250 900 2.0 3.0 dB dB MHz pF 3 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 2N5210/MMBT5210 NPN General Purpose Amplifier (continued) Typical Characteristics 1200 VBEON - B ASE-EMITTER ON VOLTAGE (V) hFE - T YPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 1000 Collector-Emitter Saturation Voltage vs Collector Current 0.30 125 C o V C E = 5 .0V 0.25 β = 10 800 0.20 600 25 C o 125 C 0.15 o 400 o 0.10 25 C o 200 - 40 C 0.05 - 40 C 1 10 100 o 0 0.01 0.03 0.1 0.3 1 3 10 30 100 0.1 I C - C OLLECTOR CURRENT (m A) I C - C OLLECTOR CURR EN T (m A) VBESAT - C OLLECTOR-EMITTER VOLTAGE (V) 1.0 VBEON - B ASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current 1.0 - 40 C 0.8 o 0.8 - 40 C 25 C o o 0.6 25 C 125 C o o 0.6 125 C 0.4 o 0.4 β = 10 0.2 0.1 1 10 100 0.2 0.1 1 V C E = 5 .0V 10 I C - C OLLECTO R CURRENT (mA) I C - C OLLECTO R CURRENT (m A) Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) 10 VCB = 45V 1 0.1 25 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( ° C) 150 2N5210/MMBT5210 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Input and Output Capacitance vs Reverse Bias Voltage f = 1.0 MHz CAPACITANCE (pF) 4 3 C te Contours of Constant Gain Bandwidth Product (f T ) V CE - COLLECTOR VOLTAGE (V) 10 7 5 150 MHz 175 MHz 5 3 2 2 1 0 C ob 125 MHz 100 MHz 75 MHz 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C Normalized Collector-Cutoff Current vs Ambient Temperature 1000 Wideband Noise Frequency vs Source Resistance 5 V CE = 5.0 V ° NF - NOISE FIGURE (dB) 4 3 2 1 0 BANDWIDTH = 15.7 kHz 100 I C = 100 µA I C = 30 µA 3 10 I C = 10 µA 2,000 5,000 10,000 20,000 50,000 100,000 1 25 50 75 100 125 T A - AMBIE NT TEMPERATURE ( °C) 150 1,000 R S - SOURCE RESISTANCE (Ω ) Noise Figure vs Frequency 10 PD - POWER DISSIPATION (W) NF - NOISE FIGURE (dB) 8 I C = 200 µA, R S = 10 kΩ I C = 100 µA, R S = 10 kΩ I C = 1.0 mA, R S = 500 Ω Base-Emitter Saturation Voltage vs Collector Current 1.00 0.75 6 TO-92 0.50 4 I C = 1.0 mA, R S = 5.0 kΩ V CE = 5.0V SOT-23 0.25 2 0 0.0001 0.001 0.01 0.1 1 f - FREQUENCY (MHz) 10 100 0.00 0 25 50 75 100 o 125 150 TEMPERATURE ( C) 2N5210/MMBT5210 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Contours of Constant Narrow Band Noise Figure R S - SOURCE RESISTANCE ( Ω ) 3.0 dB 5,000 Contours of Constant Narrow Band Noise Figure R S - SOURCE RESISTANCE ( Ω ) 10,000 5,000 10,000 4.0 dB 2,000 1,000 500 V CE = 5.0 V f = 100 Hz BANDWIDTH = 20 Hz 2.0 dB 2,000 6.0 dB 8.0 dB 10 dB 12 dB 14 dB 3.0 dB 1,000 4.0 dB 500 V CE = 5.0 V f = 1.0 kHz BANDWIDTH = 200 Hz 6.0 dB 8.0 dB 200 100 200 100 1 10 100 I C - COLLECTOR CURRENT ( µ A) 1,000 1 10 100 I C- COLLECTOR CURRENT ( µ A) 1,000 Contours of Constant Narrow Band Noise Figure R S - SOURCE RESISTANCE (Ω ) 5000 2000 1000 500 200 100 1 V CE = 5.0V f = 10kHz BANDWIDTH = 2.0kHz R S - SOURCE RESISTANCE (Ω ) 10000 1.0 dB 2.0 dB 3.0 dB 4.0 dB 6.0 dB 8.0 dB Contours of Constant Narrow Band Noise Figure 10000 5000 2000 1000 500 2.0 dB 3.0 dB 5.0 dB 6.0 dB 10 100 I C - COLLECTOR CURRENT ( µ A) 1000 VCE = 4.0 dB 5.0V f = 1.0 MHz 200 BANDWIDTH 7.0 dB = 200kHz 8.0 dB 100 0.01 0.1 1 I C - COLLECTOR CURRENT ( µ A) 10 2N5210/MMBT5210 NPN General Purpose Amplifier (continued) Typical Common Emitter Characteristics (f = 1.0 kHz) C HARACTERISTI CS RELATI VE TO VALUE(VCE =5V) 1.4 h fe C HARACTE RI STICS RE LATIV E TO VA LUE (TA =25° C) Typical Common Emitter Characteristics 1.3 h ie Typical Common Emitter Characteristics 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -100 h oe h fe h re h ie 1.2 1.1 h re h oe h re h oe VCE = 5 .0V f = 1.0kHz I C = 1.0mA h ie h re h fe h oe 1 h ie 0.9 0.8 h fe I C = 1 .0mA f = 1.0kHz T A = 25°C 5 10 15 20 V CE - COLLECTOR VOLTAGE (V) 25 0 -50 0 50 100 T J - JUNCTIO N TEMP ERATURE (° C) 150 Typical Common Emitter Characteristics CHARACTERISTICS RELATIVE TO VALUE(I C =1mA) 100 f = 1.0kHz 10 h ie a nd h re h re h oe 1 h oe h fe 3 0.1 h ie h fe 0.01 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4