2N5306_02

2N5306_02

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    2N5306_02 - NPN Darlington Transistor - Fairchild Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
2N5306_02 数据手册
2N5306 2N5306 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 25 25 12 1.2 -55 ~ +150 Units V V V A °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) Ccb hfe Parameter Test Condition IC = 10mA, IB = 0 IC = 0.1µA, IE = 0 IE = 0.1µA, IC = 0 VCB = 25V, IE = 0 VCB = 25V, IE = 0, Ta = 100°C VEB = 12V, IC = 0 VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 100mA IC = 200mA, IB = 0.2mA IC = 200mA, IB = 0.2mA IC = 200mA, VCE = 5.0V VCB = 10V, f = 1.0MHz IC = 2.0mA, VCE = 5.0V, f = 1.0KHz IC = 2.0mA, VCE = 5.0V, f = 10MHz 7000 6.0 7,000 20,000 Min. 25 25 12 0.1 20 0.1 70,000 1.4 1.6 1.5 10 V V V pF Typ. Max. Units V V V µA µA µA Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturatin Voltage Base-Emitter On Voltage Collector-Base Capacitance Small-Signal Current Gain On Characteristics * Small Signal Characteristics * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. B1, July 2002 2N5306 Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. B1, July 2002 2N5306 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, July 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FASTâ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. Around the world.™ The Power Franchise™ DISCLAIMER ImpliedDisconnect™ PACMAN™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerTrenchâ MicroFET™ QFET™ MicroPak™ QS™ MICROWIRE™ QT Optoelectronics™ MSX™ Quiet Series™ MSXPro™ RapidConfigure™ OCX™ RapidConnect™ OCXPro™ SILENT SWITCHERâ OPTOLOGICâ SMART START™ OPTOPLANAR™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFETâ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I
2N5306_02
物料型号: - 型号为2N5306。

器件简介: - 2N5306是一个NPN达林顿晶体管,设计用于需要极高电流增益的应用,可处理高达1.0A的电流。该器件源自05工艺,并参考MPSA14的特性。

引脚分配: - 1. 发射极(Emitter) - 2. 集电极(Collector) - 3. 基极(Base)

参数特性: - 绝对最大额定值: - 集电极-发射极电压(VCEO):25V - 集电极-基极电压(VCBO):25V - 发射极-基极电压(VEBO):12V - 集电极电流(IC):连续1.2A - 工作和存储结温范围(TJ, TSTG):-55°C至+150°C

功能详解: - 关断特性: - 集电极-发射极击穿电压(V(BR)CEO):IC=10mA, IB=0时为25V - 集电极-基极击穿电压(V(BR)CBO):IC=0.1µA, IE=0时为25V - 发射极-基极击穿电压(V(BR)EBO):IE=0.1µA, IC=0时为12V - 集电极截止电流(ICBO):VCB=25V, IE=0时为0.1µA,100°C时为20µA - 发射极截止电流(IEBO):VEB=12V, IC=0时为0.1µA - 开启特性: - DC电流增益(hFE):VCE=5.0V, IC=2.0mA时为20,000至70,000;VCE=5.0V, IC=100mA时为7,000 - 集电极-发射极饱和电压(VCE(sat)):IC=200mA, IB=0.2mA时为1.4V - 基极-发射极饱和电压(VBE(sat)):IC=200mA, IB=0.2mA时为1.6V - 基极-发射极开启电压(VBE(on)):IC=200mA, VCE=5.0V时为1.5V - 小信号特性: - 集电极-基极电容(Ccb):VCB=10V, f=1.0MHz时为10pF - 小信号电流增益(hfe):IC=2.0mA, VCE=5.0V, f=1.0KHz时为7000;f=10MHz时为6.0

应用信息: - 2N5306适用于需要极高电流增益的应用,可处理高达1.0A的电流。

封装信息: - 封装类型为TO-92,具体尺寸如下(单位:毫米): - 4.58 ±0.25(最大值) - 4.58 ±0.20(标称值) - 0.46 ±0.10 - 14.47 ±0.40 - 1.27TYP [1.27 ±0.20](标称值) - 3.60 ±0.20 - 0.38 +0.10 –0.05(最小值) - 3.86MAX - 1.02 ±0.10
2N5306_02 价格&库存

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