2N5307

2N5307 2N5307 NPN General Purpose Amplifier • This device designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from Process 05. • See MPSA14 for characteristics. 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TST Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 40 40 12 1.2 -55 ~ +150 Units V V V A °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 2N5307 Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics BV(BR)CEO BV(BR)CBO BV(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) Cob hfe Parameter Test Condition IC = 10mA, IB = 0 IC = 0.1µA, IE = 0 IE = 0.1µA, IC = 0 VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 100°C VEB = 12V, IC = 0 VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 100mA IC = 200mA, IB = 0.2mA IC = 200mA, IB = 0.2mA IC = 200mA,VCE = 5.0V VCB = 10V, f = 1.0MHz IC = 2.0mA, VCE = 5.0V, f = 1.0kHz IC = 2.0mA, VCE = 5.0V, f = 10MHz 2,000 6.0 2,000 6,000 Min. 40 40 12 0.1 20 0.1 20,000 1.4 1.6 1.5 10 V V V pF Typ. Max. Units V V V µA µA µA Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Reverse Base Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Small-Signal Current Gain On Characteristics * Small Signal Characteristics * Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 2N5307 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FASTâ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. 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A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I