2N5401

2N5401 / MMBT5401 Discrete POWER & Signal Technologies 2N5401 MMBT5401 C E C BE TO-92 SOT-23 Mark: 2L B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 150 160 5.0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5401 625 5.0 83.3 200 Max *MMBT5401 350 2.8 357 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 1997 Fairchild Semiconductor Corporation 2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 µA, I E = 0 I E = 10 µA, I C = 0 VCB = 120 V, IE = 0 VCB = 120 V, IE = 0, TA = 100°C VEB = 3.0 V, IC = 0 150 160 5.0 50 50 50 V V V nA µA nA ON CHARACTERISTICS* hFE DC Current Gain I C = 1.0 mA, VCE = 5.0 V I C = 10 mA, VCE = 5.0 V I C = 50 mA, VCE = 5.0 V I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA 50 60 50 240 0.2 0.5 1.0 1.0 V V V V VCE(sat ) VBE( sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Cobo NF Current Gain - Bandwidth Product Output Capacitance Noise Figure I C = 10 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz I C = 250 µA, VCE = 5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz 100 300 6.0 8.0 MHz pF dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0 Vtf=0 Xtf=0 Rb=10) 2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) Typical Characteristics vs Collector Current 200 V CESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 V CE = 5V 150 1 25 °C 25 °C - 40 ºC 0.3 100 0.2 125 ºC 25 °C 50 0.1 - 40 ºC FE 0 0.0001 0.001 0.01 0.1 1 0 0.1 I C - COLLECTOR CURRENT (A) 1 10 I C - COLLECTOR CURRENT (mA) P 74 100 h VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 ºC 25 °C 0.8 - 40 ºC 25 °C 0.6 125 ºC 0.6 125 ºC 0.4 β = 10 0.4 V CE = 5V 0.2 0.1 IC 1 10 - COLLECTOR CURRENT (mA) P4 100 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) P4 100 Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (nA) 100 V CB = 100V 10 1 0.1 25 50 75 100 125 T A - AMBIENT TEMPERATURE (ºC) P4 150 BV CER - BREAKDOWN VOLTAGE (V) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 220 210 200 190 180 170 0.1 1 10 100 1000 RESISTANCE (k Ω) 2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Input and Output Capacitance vs Reverse Voltage f = 1.0 MHz CAPACITANCE (pF) 60 Power Dissipation vs Ambient Temperature 700 PD - POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 TO-92 80 40 C eb 20 C cb 0 0.1 1 10 100 V R - REVERSE BIAS VOLTAGE(V)