2N5458

2N5458

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    2N5458 - N-Channel General Purpose Amplifier - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
2N5458 数据手册
2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 Discrete POWER & Signal Technologies 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 G D G S TO-92 D SOT-23 Mark: 6D / 61S / 6L S N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value 25 - 25 10 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5457 625 5.0 83.3 200 Max *MMBF5457 350 2.8 357 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ã 1997 Fairchild Semiconductor Corporation 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 N-Channel General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = 10 µ A, VDS = 0 VGS = -15 V, VDS = 0 VGS = -15 V, VDS = 0, TA = 100°C VDS = 15 V, ID = 10 nA 2N5457 2N5458 2N5459 VDS = 15 V, ID = 100 µ A 2N5457 VDS = 15 V, ID = 200 µ A 2N5458 VDS = 15 V, ID = 400 µ A 2N5459 - 25 - 1.0 - 200 - 6.0 - 7.0 - 8.0 - 2.5 - 3.5 - 4.5 V nA nA V V V V V V - 0.5 - 1.0 - 2.0 VGS Gate-Source Voltage ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 2N5457 2N5458 2N5459 1.0 2.0 4.0 3.0 6.0 9.0 5.0 9.0 16 mA mA mA SMALL SIGNAL CHARACTERISTICS gfs Forward Transfer Conductance* VDS = 15 V, VGS = 0, f = 1.0 kHz 2N5457 2N5458 2N5459 VDS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 1.0 MHz VDS = 15 V, VGS = 0, f = 1.0 MHz VDS = 15 V, VGS = 0, f = 1.0 kHz, RG = 1.0 megohm, BW = 1.0 Hz 1000 1500 2000 10 4.5 1.5 5000 5500 6000 50 7.0 3.0 3.0 µ mhos µ mhos µ mhos µ mhos pF pF dB gos Ciss Crss NF Output Conductance* Input Capacitance Reverse Transfer Capacitance Noise Figure *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2% Typical Characteristics Transfer Characteristics Transfer Characteristics 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 N-Channel General Purpose Amplifier (continued) Typical Characteristics (continued) Transfer Characteristics Transfer Characteristics Common Drain-Source Parameter Interaction Output Conductance vs. Drain Current Transconductance vs. Drain Current 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 N-Channel General Purpose Amplifier (continued) Typical Characteristics (continued) Channel Resistance vs. Temperature Noise Voltage vs. Frequency Leakage Current vs. Voltage Capacitance vs. Voltage
2N5458 价格&库存

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