2N5639

2N5639 2N5639 N-Channel Switch • This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51. 1 TO-92 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TC=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 30 -30 50 -55 ~ +150 Units V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Symbol Off Characteristics V(BR)GSS IGSS ID(off) IDSS rDS(on) rds(on) Ciss Crss td(on) tr td(off) tf Parameter Test Condition VDS = 0, IG = -10µA VGS = -15V, VDS = 0 VDS = 12V, VGS = 15V VDS = 20V, IGS = 0 VGS = 0V, ID = 1.0mA VDS = VGS = 0, f = 1.0kHz VDS = 0, VGS = 12V, f = 1.0MHz VDS = 0V, VGS = 12V, f = 1.0MHz VDD = 10V, VGS(on) = 0 VGS(off) = -12, ID(on) = 12mA R G = 50Ω 25 60 60 10 4.0 6.0 8.0 10 20 Min. -30 -1.0 1.0 Typ. Max. Units V nA nA mA Ω Ω pF pF ns ns ns ns Gate-Source Breakdown Voltage Gate Reverse Current Drain Cutoff Leakage Current Zero-Gate Voltage Drain Current * Drain-Source On Resistance Drain-Source On Resistance Input Capacitance Reverse Transfer Capacitance Trun On Delay Time Rise Time Trun Off Delay Time Fall Time On Characteristics Small Signal Characteristics Switching Characteristics * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0% Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/°C °C/W °C/W ©2003 Fairchild Semiconductor Corporation Rev. A, July 2003 2N5639 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, July 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2003 Fairchild Semiconductor Corporation Rev. I3